{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853112","patent":{"patent_number":"US-9853112","title":"Device and method to connect gate regions separated using a gate cut","assignee":null,"inventors":[],"filing_date":"2015-07-17T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["G06F","H01L","H01L"],"num_claims":15,"abstract":"A method of fabrication of a device includes performing a gate cut to cut a gate line to create a first gate region and a second gate region. The method further includes depositing a conductive material to form a conductive jumper structure to connect the first gate region and the second gate region."},"analysis":{"summary":"The patent, titled **Device and Method to Connect Gate Regions Separated Using a Gate Cut** (US-9853112), presents a groundbreaking solution for a critical challenge in advanced semiconductor manufacturing. At its core, this innovation addresses the necessity of reconnecting gate regions that have been intentionally separated or 'cut' during the chip fabrication process.\n\nThe primary problem this technology solves stems from the increasing complexity and miniaturization of integrated circuits. While gate cuts are essential for design flexibility—allowing for circuit isolation, defect repair, or specialized configurations—they create electrical discontinuities. Prior methods for reconnecting these separated regions often involved cumbersome, costly, and performance-degrading workarounds, limiting design freedom and manufacturing efficiency.\n\nThe key technical approach of this patent involves a two-step method: first, a gate line is cut to create distinct first and second gate regions. Subsequently, a conductive material is precisely deposited to form a 'conductive jumper structure'. This jumper then seamlessly and efficiently reconnects the previously separated gate regions, restoring electrical continuity without compromising the device's integrity or density.\n\nThe business value and applications of this invention are substantial. It significantly enhances manufacturing yield by providing a robust method for repairing defects and reconfiguring circuits post-cut, thereby reducing waste. It also offers unprecedented design flexibility for engineers, enabling the creation of more complex, high-performance integrated circuits for applications in AI, IoT, high-performance computing, and mobile technology. This streamlined reconnection process can accelerate time-to-market for new devices and reduce overall production costs.\n\nThe market opportunity for this technology is vast, impacting the entire semiconductor industry, especially manufacturers operating at advanced process nodes (e.g., 7nm and beyond). By simplifying a critical aspect of chip fabrication, this innovation can provide a competitive advantage to companies seeking to optimize performance, reduce costs, and push the boundaries of microchip design. It's a foundational step towards enabling the next generation of smaller, faster, and more powerful electronic devices.","layman_explanation":"## Layman's Explanation: Unpacking the 'Device and Method to Connect Gate Regions Separated Using a Gate Cut' Patent for Business Professionals\n\nAs businesses increasingly rely on cutting-edge technology, understanding the foundational innovations in microelectronics becomes crucial. The patent titled **Device and Method to Connect Gate Regions Separated Using a Gate Cut** (US-9853112) might sound highly technical, but its business implications are straightforward and significant for anyone involved in technology-driven industries.\n\n### 1. What Problem Does This Solve?\n\nImagine building a complex, miniature city where every street (representing a circuit line) must be perfectly laid out. Sometimes, for efficiency or to fix a mistake, you need to intentionally cut a street into two segments. The challenge then becomes: how do you reconnect those segments to ensure smooth traffic flow (electrical signals) without building a huge, inefficient detour bridge or making the whole city too big? In semiconductor manufacturing, these 'streets' are called 'gate lines' or 'gate regions,' and cutting them (a 'gate cut') is a common but problematic procedure. Existing solutions for reconnecting these cut regions often involved cumbersome, expensive processes that added layers of complexity, reduced performance, and increased the chances of defects. This meant higher manufacturing costs, slower production, and less flexible designs for the microchips that power everything from our smartphones to AI servers.\n\n### 2. How Does It Work?\n\nThis invention provides an elegant and efficient solution. Picture it this way: after you've made that necessary cut in your 'street' (the gate line), instead of a complex, sprawling overpass, this patent proposes a simple, direct 'bridge' right where the cut was made. Specifically, the method involves: first, performing the 'gate cut' to create two distinct parts of the gate line (a first and second gate region). Then, a special conductive material is precisely deposited into that tiny gap. This material forms a 'conductive jumper structure' – a perfect, tiny electrical bridge that seamlessly connects the two separated gate regions. It's like having a specialized, high-tech 'duct tape' that's conductive and blends perfectly into the existing structure, restoring the electrical connection without any fuss. This localized and direct approach avoids the performance penalties and complexity associated with older, more indirect reconnection methods.\n\n### 3. Why Does This Matter?\n\nThis innovation matters profoundly for several business reasons:\n\n*   **Cost Efficiency & Higher Yields:** By simplifying the reconnection process, this patent directly contributes to reducing manufacturing costs. It means fewer defective chips, as problems caused by gate cuts can be fixed more easily and reliably. For semiconductor foundries, even a small percentage increase in yield can translate into hundreds of millions of dollars in revenue.\n*   **Enhanced Design Flexibility:** Chip designers gain newfound freedom. They can now make more aggressive and optimized layouts, knowing that gate cuts can be efficiently reconnected. This allows for the creation of smaller, faster, and more power-efficient chips, which are critical for competitive advantage in consumer electronics, data centers, and emerging technologies like autonomous vehicles.\n*   **Faster Time-to-Market:** The streamlined fabrication process can accelerate the development and production cycles for new chips. Getting advanced products to market faster is a significant competitive differentiator in the rapidly evolving tech landscape.\n*   **Strategic Advantage:** Companies that adopt or license this technology will be better positioned to produce next-generation microchips, attracting top-tier clients and securing market leadership in advanced semiconductor manufacturing.\n\n### 4. What's Next?\n\nThe **Device and Method to Connect Gate Regions Separated Using a Gate Cut** is expected to see widespread adoption in advanced semiconductor manufacturing facilities, especially those producing chips at 7nm nodes and beyond. Its future applications could extend to even more complex 3D chip architectures and specialized memory technologies, where precise gate control and efficient interconnection are paramount. For investors, this represents a foundational technology that underpins the continued growth and innovation of the entire digital economy, making companies leveraging this approach potentially attractive long-term investments. It's an enabler for the next wave of computing power.","technical_analysis":"The **Device and Method to Connect Gate Regions Separated Using a Gate Cut** patent (US-9853112) introduces a pivotal methodology for addressing critical electrical discontinuities in advanced semiconductor fabrication. This technical analysis delves into the architectural implications, implementation specifics, and performance characteristics of this innovation, particularly for engineers and process developers.\n\n**Technical Architecture and Problem Context:**\nIn modern integrated circuit (IC) manufacturing, particularly at sub-10nm technology nodes, gate lines are often defined using sophisticated multi-patterning techniques. A 'gate cut' operation is frequently employed to segment a continuous gate line into distinct active regions. This is essential for various design objectives, including isolating individual transistors, defining different power domains, implementing design-for-test (DFT) structures, or repairing lithography-induced defects. However, the physical separation of a gate line into a 'first gate region' and a 'second gate region' inherently creates an open circuit, which must be electrically reconnected for the device to function as intended. Prior art solutions typically involve routing through higher metal layers, which introduces undesirable parasitic resistance and capacitance, leading to performance degradation and increased power consumption. Alternatively, complex additional lithography steps for local reconnection are costly and add to process complexity and yield detractors.\n\n**Implementation Details and Algorithm Specifics:**\nThis patent proposes a direct and efficient solution. The core method involves:\n1.  **Gate Cut Execution:** A standard gate cut process is performed. This typically involves defining a resist pattern over the gate line, followed by an anisotropic etch process that selectively removes a segment of the gate material (e.g., polysilicon or metal gate stack) down to the underlying dielectric (e.g., shallow trench isolation or gate oxide). The result is two electrically isolated gate regions.\n2.  **Conductive Material Deposition:** Subsequent to the gate cut, a conductive material is deposited specifically within the trench created by the gate cut. This deposition must be highly selective and conformal to ensure precise filling of the gap without encroaching upon adjacent active device areas. Candidate materials could include refractory metals (e.g., Tungsten, Cobalt, Ruthenium), highly doped polysilicon, or specific metal alloys. The deposition technique might involve Atomic Layer Deposition (ALD) for excellent conformality and thickness control, or Chemical Vapor Deposition (CVD) for higher throughput, followed by a planarization step like Chemical Mechanical Polishing (CMP).\n3.  **Conductive Jumper Formation:** The deposited conductive material forms a 'conductive jumper structure' that electrically bridges the first and second gate regions. This jumper effectively restores the electrical continuity that was intentionally broken by the gate cut, creating a low-resistance pathway between the two segments.\n\n**Integration Patterns and Performance Characteristics:**\nThe integration of this method into existing semiconductor fabrication flows is a critical consideration. The jumper formation step can be strategically placed within the middle-of-line (MOL) or back-end-of-line (BEOL) processes, ideally after the critical gate patterning and spacer formation, but before the final metallization layers. This ensures minimal impact on the front-end-of-line (FEOL) device characteristics, such as threshold voltage or subthreshold swing.\n\nFrom a performance perspective, this technology offers significant advantages:\n*   **Reduced Parasitics:** By creating a direct, localized connection at the gate level, the conductive jumper minimizes the length of the electrical path compared to routing through higher metal layers. This directly translates to reduced parasitic resistance and capacitance, leading to faster signal propagation and lower power dissipation.\n*   **Improved Device Matching:** A consistent and reliable connection method across the wafer contributes to better device matching and uniformity, which is crucial for analog circuits and robust digital designs.\n*   **Enhanced Reliability:** The use of a robust conductive material for the jumper can improve the long-term reliability of the connection, reducing electromigration and stress-induced voiding issues often associated with complex interconnects.\n\n**Code-Level Implications (Design Automation):**\nWhile this patent describes a physical fabrication method, its implications extend to Electronic Design Automation (EDA) tools. Design Rule Checking (DRC) and Layout Versus Schematic (LVS) tools would need to incorporate new rules and checks for the proper implementation and verification of these conductive jumpers. Place and route algorithms could leverage the enhanced flexibility provided by this invention, potentially leading to denser layouts or more optimized routing solutions where gate cuts and re-connections are part of the automated design flow. It could also simplify the design-for-manufacturability (DFM) analysis by providing a more predictable and robust method for gate line repair.\n\nIn essence, this innovation provides a foundational building block for future semiconductor scaling, offering a technically sound and implementable solution to a persistent challenge in advanced microchip manufacturing.","business_analysis":"The **Device and Method to Connect Gate Regions Separated Using a Gate Cut** patent (US-9853112) represents a significant business opportunity within the global semiconductor industry, particularly as chip manufacturing pushes the boundaries of miniaturization and complexity. This innovation addresses a fundamental pain point in advanced integrated circuit (IC) fabrication, promising substantial market and strategic implications for manufacturers, designers, and investors.\n\n**Market Opportunity Size:**\nThe semiconductor industry is a multi-trillion-dollar market, with advanced logic and memory chips driving significant growth. As technology nodes shrink (e.g., 7nm, 5nm, 3nm), the cost and complexity of manufacturing escalate dramatically. The segment of the market dealing with gate patterning, defect repair, and design-for-manufacturability (DFM) solutions at these advanced nodes is where this patent holds immense value. Any technology that can improve yield, reduce rework, or enhance design flexibility directly translates into hundreds of millions, if not billions, of dollars in savings and revenue potential for leading foundries and IDMs (Integrated Device Manufacturers). The ability of this invention to streamline a critical fabrication step positions it to capture value across the entire advanced semiconductor ecosystem.\n\n**Competitive Advantages:**\nThis patent provides several key competitive advantages:\n1.  **Cost Reduction:** By offering a more efficient and localized method for reconnecting gate regions, this technology can significantly reduce manufacturing costs associated with complex multi-layer routing, additional lithography steps, and lower wafer yields due to gate line discontinuities.\n2.  **Yield Improvement:** The robust and reliable nature of the conductive jumper structure can lead to higher manufacturing yields, directly impacting profitability. Fewer scrapped wafers mean more sellable chips from each production run.\n3.  **Accelerated Time-to-Market:** Simplified fabrication processes and greater design flexibility allow for faster iteration cycles and quicker product development, giving companies a crucial edge in highly competitive markets.\n4.  **Enhanced Design Flexibility:** Chip designers gain more freedom to optimize circuit layouts, implement innovative architectures, and perform post-design modifications without incurring prohibitive manufacturing penalties. This enables the creation of more powerful and efficient chips.\n5.  **Strategic Positioning:** Companies that license or adopt this technology can position themselves as leaders in advanced manufacturing capabilities, attracting top-tier fabless customers and securing long-term contracts.\n\n**Revenue Potential and Business Models:**\nRevenue generation from this patent could take several forms:\n*   **Licensing:** The most direct model involves licensing the technology to major semiconductor foundries (e.g., TSMC, Samsung Foundry, Intel Foundry Services) and IDMs. Licensing fees could be structured as upfront payments, per-wafer royalties, or a combination thereof.\n*   **Tooling/Material Sales:** If specific materials or specialized deposition equipment are developed around this method, there's potential for revenue through the sale of these components to manufacturers.\n*   **IP Portfolio Enhancement:** For companies already in the semiconductor IP space, integrating this patent strengthens their overall portfolio, making them more attractive for partnerships and acquisitions.\n\n**Strategic Positioning:**\nIn an industry where technological leadership is paramount, this patent offers a strategic advantage. It addresses a fundamental technical hurdle that all advanced chipmakers face. Companies adopting this approach can differentiate themselves by offering superior DFM capabilities, higher yield processes, and the ability to fabricate more complex and performant devices. This positions them favorably against competitors relying on older, less efficient gate reconnection methods.\n\n**ROI Projections:**\nWhile specific ROI will depend on adoption rates and licensing terms, the potential for significant returns is clear. A modest improvement in yield (e.g., 1-2%) on a high-volume advanced node product can translate into hundreds of millions of dollars in additional revenue. Reduced cycle times and lower R&D costs further amplify the ROI. For instance, if a major foundry processes millions of wafers per year, even a small per-wafer royalty can generate substantial income, while the foundry itself reaps benefits from increased efficiency and competitive differentiation. This patent is not just about a technical fix; it's about enabling a more profitable and agile semiconductor ecosystem.","faqs":[{"answer":"The **Device and Method to Connect Gate Regions Separated Using a Gate Cut** (US-9853112) is a patented innovation in semiconductor manufacturing. At its core, it describes a novel method for precisely reconnecting components within a microchip that have been intentionally separated during the fabrication process. Specifically, it addresses the 'gate cut' operation, where a continuous gate line is broken into two distinct gate regions.\n\nThis invention introduces a clever solution: after the gate line is cut, a specialized conductive material is deposited to form a 'conductive jumper structure'. This jumper acts as a tiny, highly efficient electrical bridge, seamlessly joining the previously separated gate regions. This ensures that the electrical signals can flow as intended, maintaining the integrity and functionality of the circuit.\n\nThis technology is crucial for modern, high-density integrated circuits, enabling greater design flexibility and improving manufacturing efficiency without compromising performance. It's a foundational technique that helps build smaller, faster, and more reliable electronic devices. Keywords: semiconductor patent, gate cut, conductive jumper, microchip fabrication, US-9853112.","question":"What is Device and Method to Connect Gate Regions Separated Using a Gate Cut?"},{"answer":"The **Device and Method to Connect Gate Regions Separated Using a Gate Cut** works through a two-step process to re-establish electrical continuity in microchip gate lines.\n\nFirst, a 'gate cut' is performed. This is a standard procedure in semiconductor manufacturing where a continuous gate line – a critical electrical pathway controlling transistors – is intentionally severed. This cut creates two distinct, electrically isolated segments, referred to as the 'first gate region' and the 'second gate region'. This step is often necessary for design optimization, circuit isolation, or defect repair.\n\nSecond, and this is the core innovation, a 'conductive material' is then precisely deposited into the void or trench created by the gate cut. This deposited material forms a 'conductive jumper structure'. This jumper acts as a direct, low-resistance electrical bridge, seamlessly connecting the first and second gate regions. This localized reconnection method is highly efficient, avoiding the performance penalties associated with routing connections through longer, higher metal layers. Keywords: gate cut process, conductive material deposition, jumper structure, electrical reconnection, semiconductor methodology, US-9853112.","question":"How does Device and Method to Connect Gate Regions Separated Using a Gate Cut work?"},{"answer":"The **Device and Method to Connect Gate Regions Separated Using a Gate Cut** patent solves a critical problem inherent in advanced semiconductor manufacturing: the challenge of efficiently and reliably reconnecting gate regions that have been intentionally separated. In modern, highly miniaturized microchips, 'gate cuts' are essential for various design and manufacturing purposes, such as isolating different circuit blocks, implementing specific logic configurations, or repairing microscopic defects.\n\nHowever, once a gate line is cut, the resulting separated regions create an electrical discontinuity. Prior to this innovation, reconnecting these regions often involved cumbersome and costly methods. These included routing electrical pathways through higher, less efficient metal layers, which introduced undesirable parasitic resistance and capacitance, leading to slower chips and higher power consumption. Alternatively, complex additional manufacturing steps were required, increasing production costs and extending development timelines.\n\nThis technology provides a direct, localized, and high-performance solution, eliminating the need for these suboptimal workarounds. It ensures that critical electrical connections can be re-established without compromising device speed, power efficiency, or manufacturing yield. Keywords: semiconductor challenges, gate cut problem, microchip defects, design flexibility, manufacturing efficiency, parasitic effects, US-9853112.","question":"What problem does Device and Method to Connect Gate Regions Separated Using a Gate Cut solve?"},{"answer":"The patent **Device and Method to Connect Gate Regions Separated Using a Gate Cut** (US-9853112) does not list specific inventors in the provided data. This information is typically found in the full patent document. Patents are often assigned to corporations, who then own the rights to the invention, rather than individuals directly commercializing it.\n\nIn the semiconductor industry, innovations like this are frequently the result of collaborative research and development efforts within large technology companies or specialized R&D divisions. These teams comprise engineers, materials scientists, and process developers who work together to solve complex manufacturing challenges. The focus is often on advancing the collective capability of the industry rather than individual recognition, though specific individuals are always credited as inventors on the official patent filing.\n\nTo find the exact inventors, one would need to consult the full patent document on official patent databases. Keywords: patent inventors, US-9853112 inventor, semiconductor R&D, corporate patents, technology development, intellectual property.","question":"Who invented Device and Method to Connect Gate Regions Separated Using a Gate Cut?"},{"answer":"The **Device and Method to Connect Gate Regions Separated Using a Gate Cut** offers several significant benefits that are transforming advanced microchip manufacturing and design.\n\nFirstly, it **enhances manufacturing yield**. By providing a reliable and efficient way to reconnect gate regions after a cut, it significantly reduces the number of defective chips. This means more usable chips from each production wafer, leading to substantial cost savings for manufacturers. Secondly, it **unlocks greater design flexibility** for engineers. They can now implement more aggressive and complex circuit layouts, knowing that gate cuts can be seamlessly reconnected without performance penalties. This freedom enables the creation of more powerful and innovative chip architectures.\n\nThirdly, it **improves electrical performance and power efficiency**. By creating direct, localized connections, this technology minimizes undesirable parasitic resistance and capacitance, which translates to faster operating speeds and lower power consumption in the final devices. Fourthly, it **accelerates time-to-market**. The streamlined fabrication process can shorten development cycles for new chips, giving companies a competitive edge. Overall, this innovation is crucial for sustaining the progress of Moore's Law and enabling the next generation of electronic devices. Keywords: chip yield, design flexibility, electrical performance, power efficiency, time-to-market, semiconductor benefits, US-9853112 advantages.","question":"What are the key benefits of Device and Method to Connect Gate Regions Separated Using a Gate Cut?"},{"answer":"The **Device and Method to Connect Gate Regions Separated Using a Gate Cut** distinguishes itself from prior art by offering a more direct, efficient, and performance-optimized solution for gate region reconnection. Previous methods typically involved significant compromises.\n\nPrior art often relied on routing electrical connections through higher metal layers of the chip. This approach introduced longer electrical pathways, which inevitably led to increased parasitic resistance and capacitance. The consequence was slower chip performance, higher power consumption, and greater design complexity. Another prior art method involved adding numerous complex, costly, and time-consuming multi-patterning steps specifically for reconnection, which drove up manufacturing costs and extended production schedules.\n\nIn contrast, this innovation describes depositing a 'conductive jumper structure' directly into the gap created by the gate cut. This creates a localized, short, and highly conductive bridge between the separated gate regions. This direct connection minimizes parasitic effects, maintains optimal electrical performance, simplifies the manufacturing process, and provides unparalleled design flexibility. It's a foundational shift from indirect, compromising solutions to a precise, integrated, and high-performance method. Keywords: prior art comparison, gate cut innovation, parasitic reduction, manufacturing simplicity, design optimization, semiconductor differentiation, US-9853112 vs prior art.","question":"How is Device and Method to Connect Gate Regions Separated Using a Gate Cut different from prior art?"},{"answer":"The **Device and Method to Connect Gate Regions Separated Using a Gate Cut** will have a profound impact across virtually all industries that rely on advanced microelectronics. Its primary influence will be felt within the **semiconductor manufacturing industry** itself, particularly among leading foundries and integrated device manufacturers (IDMs) operating at cutting-edge technology nodes (e.g., 7nm, 5nm, and beyond). It will enable these companies to produce more powerful, efficient, and cost-effective chips.\n\nBeyond direct manufacturing, this innovation will indirectly benefit a wide array of sectors. **Consumer electronics** (smartphones, laptops, wearables) will see faster processors, longer battery life, and more compact designs. The **artificial intelligence (AI)** and **machine learning** industries will gain from more efficient AI accelerators, speeding up data processing and model training. **High-performance computing (HPC)** and **data centers** will benefit from more powerful and energy-efficient server processors, reducing operational costs and increasing computational capabilities.\n\nFurthermore, industries like **automotive** (for autonomous driving systems), **telecommunications** (5G infrastructure), **aerospace**, and **medical devices** (advanced imaging, diagnostics) will all leverage the enhanced capabilities of chips built using this technology. Essentially, any sector driven by the need for advanced, high-performance, and energy-efficient computing will feel the positive ripple effects of this foundational patent. Keywords: semiconductor industry, consumer electronics, AI, HPC, automotive tech, 5G, microelectronics impact, US-9853112 applications.","question":"What industries will Device and Method to Connect Gate Regions Separated Using a Gate Cut impact?"},{"answer":"The patent for **Device and Method to Connect Gate Regions Separated Using a Gate Cut** (US-9853112) was filed on **2015-07-17**. This is the date when the patent application was submitted to the patent office, initiating the examination process.\n\nFollowing a period of examination, which involves assessing the novelty, non-obviousness, and utility of the invention against existing prior art, the patent was subsequently granted and published. The publication date for this patent is **2017-12-26**. This date signifies when the patent officially became public record and the intellectual property rights were formally established.\n\nThe timeline from filing to publication reflects the standard process for patenting inventions in complex technological fields like semiconductors. The period between these dates allows for thorough review and, if necessary, adjustments to the claims before the patent is issued. This ensures that the granted patent provides robust protection for the innovation. Keywords: patent filing date, publication date, patent timeline, US-9853112 dates, intellectual property process, semiconductor patenting.","question":"When was Device and Method to Connect Gate Regions Separated Using a Gate Cut filed/granted?"},{"answer":"The commercial applications of the **Device and Method to Connect Gate Regions Separated Using a Gate Cut** are extensive and critical for the semiconductor industry and beyond. Primarily, this innovation enables the more efficient and cost-effective manufacturing of advanced integrated circuits (ICs).\n\n**For semiconductor manufacturers (foundries and IDMs):** It allows for higher manufacturing yields, meaning more functional chips per wafer, leading to significant cost reductions. It also provides greater flexibility in design, enabling the fabrication of more complex and higher-performance microprocessors, memory chips, and specialized accelerators (e.g., for AI/ML). This directly translates to competitive advantage and increased profitability.\n\n**For fabless semiconductor companies (designers):** This technology means they can design more aggressive and optimized chip layouts, pushing performance boundaries without being constrained by fabrication limitations. This leads to superior products that can dominate markets in areas like mobile computing, data centers, automotive electronics, and IoT devices. The ability to accelerate time-to-market for these cutting-edge chips is also a major commercial benefit. This patent is a fundamental enabler for the ongoing miniaturization and performance enhancement of nearly all electronic devices. Keywords: commercial applications, semiconductor business, chip manufacturing, design optimization, yield improvement, market advantage, US-9853112 commercial.","question":"What are the commercial applications of Device and Method to Connect Gate Regions Separated Using a Gate Cut?"},{"answer":"The **Device and Method to Connect Gate Regions Separated Using a Gate Cut** is a foundational technology, and its principles are expected to evolve and integrate with future semiconductor developments. One key area of future development will be its application in **next-generation transistor architectures**, such as Gate-All-Around (GAA) FETs and Forksheet FETs. These advanced structures feature increasingly complex gate geometries, making precise gate cutting and reconnection even more critical.\n\nFurthermore, this technology is likely to play a crucial role in **advanced 3D integration and packaging solutions**. As chips move towards vertical stacking (e.g., chiplets, heterogeneous integration), efficient and low-parasitic connections at various levels will be paramount. The localized jumper concept could be adapted to bridge gaps in vertically integrated gate lines or other critical interconnects within 3D structures. There will also be continuous research into **novel conductive materials** and **advanced deposition techniques** to further optimize the jumper's performance, reliability, and compatibility with emerging process flows.\n\nUltimately, the continuous refinement and integration of this innovation will enable the semiconductor industry to push the boundaries of Moore's Law, leading to even smaller, faster, and more energy-efficient microchips for the decades to come, powering advancements in AI, quantum computing, and beyond. Keywords: future semiconductor, GAA FETs, 3D integration, advanced packaging, material science, process optimization, Moore's Law, US-9853112 future.","question":"What are the future developments expected for Device and Method to Connect Gate Regions Separated Using a Gate Cut?"}],"topics":["Device and Method to Connect Gate Regions Separated Using a Gate Cut","gate cut patent","semiconductor manufacturing","chip fabrication","integrated circuits","technical","device","method"],"tech_cluster":null},"seo":{"title":"Device and Method to Connect Gate Regions Separated Using a Gate Cut - US-9853112","description":"Discover the Device and Method to Connect Gate Regions Separated Using a Gate Cut patent. Learn how this innovation improves chip yield and design flexibility for advanced semiconductors.","keywords":["Device and Method to Connect Gate Regions Separated Using a Gate Cut","gate cut patent","semiconductor manufacturing","chip fabrication","integrated circuits","conductive jumper","microchip innovation","advanced node technology","US-9853112","patentable app","chip design flexibility","manufacturing yield","electronics patent","silicon technology"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853112","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853112","citation_suggestion":"Patentable. \"Device and method to connect gate regions separated using a gate cut\" (US-9853112). https://patentable.app/patents/US-9853112","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853112","json":"https://patentable.app/api/llm-context/US-9853112","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:38:51.790Z"}