{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853120","patent":{"patent_number":"US-9853120","title":"Trench Schottky rectifier device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-11-23T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":8,"abstract":"A method for fabricating a trench Schottky rectifier device is provided. At first, a plurality of trenched are formed in a substrate of a first conductivity type. An insulating layer is formed on sidewalls of the trenches. Then, an ion implantation procedure is performed through the trenches to form a plurality of doped regions of a second conductivity type under the trenches. Subsequently, the trenches are filled with conductive structure such as metal structure or tungsten structure. At last, an electrode overlying the conductive structure and the substrate is formed. Thus, a Schottky contact appears between the electrode and the substrate. Each doped region and the substrate will form a PN junction to pinch off current flowing toward the Schottky contact to suppress the current leakage in a reverse bias mode."},"analysis":{"summary":"The patent, titled \"Trench Schottky Rectifier Device and Method for Manufacturing the Same\" (US-9853120), introduces a significant advancement in power semiconductor technology aimed at improving the efficiency and reliability of rectifier devices. The core innovation lies in its unique structural design that effectively suppresses reverse leakage current, a common drawback in conventional Schottky barrier diodes.\n\nCurrently, Schottky diodes are valued for their fast switching speeds and low forward voltage drop, but they typically exhibit higher reverse leakage currents, leading to energy loss and thermal issues. This patent addresses this problem by integrating a sophisticated trench structure within a semiconductor substrate. The method involves forming trenches, insulating their sidewalls, and then performing an ion implantation process through these trenches. This creates doped regions of a second conductivity type directly beneath the trenches. These doped regions, in conjunction with the substrate, form PN junctions.\n\nSubsequently, the trenches are filled with a conductive material, and an electrode is formed over the conductive structure and the substrate. This creates a Schottky contact between the electrode and the substrate, maintaining the desirable low forward voltage characteristics. The critical aspect is that when the device is in a reverse bias mode, the newly formed PN junctions become reverse-biased and create a 'pinch-off' effect. This actively constricts the current paths towards the Schottky contact, thereby drastically suppressing unwanted reverse leakage current.\n\nThis technology offers substantial business value by enabling the development of more efficient, cooler-running, and more reliable power electronic systems. Its applications span across various industries, including high-efficiency power supplies, automotive electronics, consumer devices, and renewable energy systems. By solving the long-standing challenge of reverse leakage in Schottky rectifiers, this innovation unlocks significant market opportunities for high-performance power conversion, allowing for smaller, more powerful, and more sustainable electronic products.","layman_explanation":"### What Problem Does This Solve?\nImagine you're running a business, and every time you send a package, a small percentage of its contents mysteriously disappears. It's not a lot per package, but over thousands of packages, those small losses add up to a significant financial drain. In the world of electronics, a similar phenomenon occurs with power components called rectifiers, specifically Schottky diodes. These components are excellent at quickly converting alternating current (AC) into direct current (DC), which is essential for almost every electronic device we use. However, their Achilles' heel is 'reverse leakage current' – a small amount of electricity that flows in the wrong direction, even when the device is supposed to be off. This leakage wastes energy, generates unwanted heat, and can shorten the lifespan of electronic products. For businesses striving for energy efficiency, compact designs, and reliable products, this leakage has been a persistent and costly challenge.\n\n### How Does It Work?\nThis patent, the \"Trench Schottky Rectifier Device and Method for Manufacturing the Same\", introduces a clever design to solve this 'leaky package' problem. Think of it like a smart packaging system. Instead of a simple, flat barrier, this innovation builds tiny, microscopic 'trenches' or channels into the material of the rectifier. Underneath these trenches, it creates special 'gates' or 'valves' using a precise manufacturing technique called ion implantation. These gates are essentially miniature PN junctions, which are known for their excellent ability to block current flow in one direction.\n\nWhen the rectifier is operating normally, electricity flows efficiently, just like a fast delivery service. But if electricity tries to flow in the wrong direction (the 'leakage'), these hidden gates under the trenches automatically activate. They 'pinch off' or close the paths where the leakage would occur, effectively stopping the unwanted current. It's like having a security system that instantly seals off any breach. This smart design allows the rectifier to maintain its fast, efficient forward operation while virtually eliminating the wasteful reverse leakage, making it a 'best of both worlds' solution.\n\n### Why Does This Matter?\nThis innovation has significant implications for businesses and consumers alike. By drastically reducing reverse leakage current, this technology leads to:\n*   **Higher Energy Efficiency:** Products using this rectifier will consume less power, lowering electricity bills for consumers and operating costs for businesses, especially in large-scale applications like data centers.\n*   **Improved Product Reliability & Lifespan:** Less wasted energy means less heat generated. Cooler-running devices tend to last longer and are less prone to failure, reducing warranty claims and enhancing brand reputation.\n*   **Smaller, More Powerful Designs:** With less heat to dissipate, manufacturers can design more compact devices without compromising performance, enabling sleeker laptops, more efficient electric vehicle components, and denser power supplies.\n*   **Competitive Edge:** Companies adopting this technology can differentiate their products in a crowded market by offering superior performance and sustainability credentials. This can lead to increased market share and stronger brand loyalty.\n\n### What's Next?\nThis patent is a foundational step for the next generation of power electronics. We can expect to see this technology integrated into a wide array of products, from everyday consumer gadgets to high-power industrial equipment, electric vehicle charging stations, and renewable energy systems. Its adoption will likely accelerate the trend towards greener, more efficient electronics, leading to a ripple effect across numerous industries and creating new opportunities for innovation and investment in power management solutions. It's a key enabler for a more sustainable and high-performance electronic future.","technical_analysis":"The patent \"Trench Schottky Rectifier Device and Method for Manufacturing the Same\" (US-9853120) details an innovative semiconductor device architecture and fabrication process designed to overcome the inherent trade-off between forward voltage drop (V_F) and reverse leakage current (I_R) in conventional Schottky barrier diodes. This technical analysis will delve into the architecture, implementation details, and performance characteristics.\n\n**Technical Architecture:**\nThe core of this invention is a trench-based Schottky rectifier integrating localized PN junctions. The device is constructed on a substrate of a first conductivity type (e.g., n-type silicon). A plurality of trenches are etched into this substrate. Unlike simple trench Schottky designs, this patent introduces an insulating layer (e.g., silicon dioxide) formed on the sidewalls of these trenches. This layer is critical for defining the electrical boundaries and preventing unwanted shorting or parasitic effects. The most significant architectural feature is the formation of doped regions of a second conductivity type (e.g., p-type) directly beneath the trenches. These regions are formed via ion implantation, creating PN junctions between the doped regions and the surrounding first-conductivity-type substrate. The trenches are then filled with a conductive material (e.g., metal, polysilicon, or tungsten), which forms part of the Schottky contact. Finally, an overlying electrode makes contact with both the conductive trench fill and the substrate surface, establishing the primary Schottky barrier.\n\n**Implementation Details & Algorithm Specifics:**\n1.  **Trench Formation:** Standard semiconductor fabrication techniques such as photolithography and reactive ion etching (RIE) are used to define and etch the trenches into the silicon substrate. The dimensions (width, depth, spacing) of these trenches are critical parameters influencing device performance.\n2.  **Sidewall Insulation:** A dielectric layer (e.g., SiO2) is grown or deposited along the trench sidewalls. This layer provides electrical isolation and helps shape the electric field distribution, which is crucial for the leakage suppression mechanism.\n3.  **Ion Implantation for Doped Regions:** This is a key step. Ion implantation is performed *through* the trenches. This directed implantation forms the doped regions (e.g., P-type wells) beneath the trench bottoms. The implantation energy and dose are carefully controlled to achieve the desired doping concentration and depth for optimal PN junction characteristics. The presence of the trenches during implantation allows for precise, self-aligned doping beneath the active area.\n4.  **Trench Fill:** The trenches are then filled with a conductive material. This could be a metal (forming a direct Schottky contact within the trench), or a heavily doped polysilicon followed by a silicide formation. The choice of material impacts the Schottky barrier height and thus the forward voltage drop.\n5.  **Electrode Formation:** A top metal electrode is deposited and patterned, contacting both the conductive trench fill and the surface of the n-type substrate. This completes the Schottky contact and provides the external connection.\n\n**Performance Characteristics & Implications:**\nThe primary advantage of this architecture stems from the 'pinch-off' effect. In reverse bias, the PN junctions formed by the doped regions beneath the trenches become reverse-biased. This creates a depletion region that extends and effectively constricts the current path in the semiconductor region directly beneath the Schottky contact. This mechanism significantly reduces the electric field crowding at the Schottky interface and raises the effective barrier height for reverse current flow, thereby suppressing reverse leakage current (I_R) without adversely affecting the forward voltage drop (V_F) or switching speed. This allows for a superior V_F vs. I_R trade-off curve compared to conventional Schottky diodes or even trench-based Schottky diodes without the integrated PN junctions.\n\nThis technology has profound implications for high-frequency power converters, where minimizing power loss and improving thermal management are paramount. By achieving significantly lower reverse leakage, this device can operate at higher temperatures with greater efficiency and reliability, extending the capabilities of power electronics across numerous applications. The robust fabrication method ensures manufacturability, making this a viable solution for next-generation power semiconductor devices.","business_analysis":"The \"Trench Schottky Rectifier Device and Method for Manufacturing the Same\" (US-9853120) represents a significant innovation in power semiconductor technology, poised to unlock substantial market opportunities and provide a distinct competitive advantage. This analysis explores its commercial applications, market potential, and strategic implications.\n\n**Market Opportunity Size:**\nThe global power semiconductor market is projected to reach well over $50 billion by the end of the decade, with rectifiers forming a crucial segment. The increasing demand for energy efficiency across all electronic devices, coupled with the rapid growth of electric vehicles (EVs), renewable energy systems (solar inverters, wind power), data centers, and 5G infrastructure, creates a massive addressable market for improved power rectifiers. Conventional Schottky diodes, while fast, are limited by reverse leakage current, which leads to energy waste and thermal management challenges. This patent directly addresses these limitations, positioning itself to capture a significant share of the high-performance and high-efficiency segments within this expansive market.\n\n**Competitive Advantages:**\n1.  **Superior Efficiency:** The invention's ability to drastically suppress reverse leakage current translates directly into higher power conversion efficiency. This is a critical differentiator in an industry where every percentage point of efficiency gain can lead to substantial energy savings and reduced operating costs.\n2.  **Enhanced Thermal Performance:** Reduced leakage means less self-heating, allowing devices to operate cooler or at higher ambient temperatures. This simplifies thermal management, potentially reducing the need for bulky heatsinks and enabling more compact designs.\n3.  **Increased Reliability and Lifespan:** Lower operating temperatures and reduced electrical stress on the device contribute to a longer operational lifespan and improved reliability, which is highly valued in industrial, automotive, and mission-critical applications.\n4.  **Optimized Trade-offs:** This technology offers a better trade-off between forward voltage drop and reverse leakage current than existing solutions, providing designers with greater flexibility to optimize for specific application requirements without compromising other critical parameters.\n\n**Revenue Potential & Business Models:**\nRevenue potential for this innovation is substantial, driven by licensing opportunities, direct manufacturing and sales, or joint ventures. Semiconductor manufacturers specializing in power devices would be key targets for licensing agreements, integrating this technology into their product lines. The business model could involve:\n*   **IP Licensing:** Licensing the patent to major semiconductor foundries and IDMs (Integrated Device Manufacturers) for integration into their rectifier product portfolios.\n*   **Component Sales:** Manufacturing and selling the Trench Schottky Rectifier Device as a discrete component or integrated into modules for various power applications.\n*   **Value-Added Solutions:** Developing custom power modules or subsystems that leverage this technology for specific high-growth sectors like EV charging, server power supplies, or solar micro-inverters.\n\n**Strategic Positioning:**\nThis patent allows companies to strategically position themselves at the forefront of high-efficiency power electronics. It enables differentiation in highly competitive markets by offering superior performance metrics. Companies adopting this technology can target premium segments that prioritize efficiency, reliability, and compact design, such as high-end consumer electronics, automotive powertrain components, and enterprise-grade power infrastructure.\n\n**ROI Projections:**\nThe ROI for investing in or licensing this technology is compelling. The ability to deliver rectifiers with lower losses translates into tangible benefits for end-users, including reduced energy consumption, lower cooling costs, and extended product warranties. For manufacturers, it means access to new market segments, increased customer satisfaction, and a strong competitive edge against conventional solutions. The long-term trend towards electrification and sustainable energy solutions ensures sustained demand for such high-performance power components, promising a robust return on investment.","faqs":[{"answer":"The \"Trench Schottky Rectifier Device and Method for Manufacturing the Same\" is a patented semiconductor technology (US-9853120) designed to significantly improve the performance of power rectifiers. At its core, it's a novel type of Schottky barrier diode that addresses the long-standing problem of reverse leakage current. Traditional Schottky diodes are fast and efficient in forward conduction but tend to leak a small amount of current when they are supposed to be blocking, leading to energy waste and heat generation.\n\nThis invention introduces a unique structural design where tiny trenches are formed in a semiconductor substrate. Within and beneath these trenches, specific doped regions are created to form PN junctions. These PN junctions work in conjunction with the main Schottky contact to actively suppress the reverse leakage current, especially under reverse bias conditions.\n\nEssentially, the Trench Schottky Rectifier Device and Method for Manufacturing the Same combines the best characteristics of both Schottky diodes (low forward voltage drop, fast switching) and PN junction diodes (excellent reverse blocking, very low leakage current) into a single, high-performance device. This hybrid approach results in a rectifier that is much more efficient and reliable than conventional designs. Its innovative architecture and fabrication method represent a significant step forward in power electronics, enabling devices to run cooler and last longer. Keywords: Trench Schottky Rectifier, semiconductor patent, power rectifier, leakage current, Schottky diode.","question":"What is Trench Schottky Rectifier Device and Method for Manufacturing the Same?"},{"answer":"The Trench Schottky Rectifier Device and Method for Manufacturing the Same works by integrating a clever 'pinch-off' mechanism directly into the device structure. First, trenches (small channels) are created in a semiconductor substrate, and their sidewalls are insulated. Crucially, through a precise ion implantation process performed through these trenches, specific doped regions of a different conductivity type are formed directly beneath the trenches. These doped regions, along with the surrounding substrate, create PN junctions.\n\nWhen the device is operating in forward bias (allowing current to flow), it behaves much like a conventional Schottky diode, offering low forward voltage drop and fast switching speeds. However, the innovation becomes apparent in reverse bias. When a reverse voltage is applied (meaning the device should block current), the PN junctions beneath the trenches also become reverse-biased.\n\nThis reverse bias causes the depletion regions of these PN junctions to expand. As they expand, they effectively 'pinch off' or constrict the current paths leading to the Schottky contact. This mechanism significantly increases the resistance to reverse current flow, thereby drastically suppressing the leakage current that would otherwise occur. This intelligent design ensures that energy is not wasted as heat, leading to higher efficiency and improved device reliability. Keywords: Trench Schottky Rectifier mechanism, pinch-off effect, PN junction, reverse bias, ion implantation, semiconductor operation.","question":"How does Trench Schottky Rectifier Device and Method for Manufacturing the Same work?"},{"answer":"The Trench Schottky Rectifier Device and Method for Manufacturing the Same primarily solves the long-standing problem of high reverse leakage current in Schottky barrier diodes. While Schottky diodes are highly valued for their fast switching characteristics and low forward voltage drop, they inherently suffer from significant current leakage when they are supposed to be blocking current (i.e., in reverse bias).\n\nThis reverse leakage current is problematic for several reasons: it leads to wasted energy, directly reducing the overall efficiency of power conversion systems. It generates unwanted heat, which can lead to thermal management challenges, requiring larger heatsinks or active cooling solutions. This excessive heat also accelerates device degradation, reducing reliability and shortening the lifespan of electronic components and systems.\n\nBy effectively suppressing this leakage, the Trench Schottky Rectifier Device and Method for Manufacturing the Same enables power electronic devices to operate more efficiently, generate less heat, and be more reliable. This breakthrough is critical for meeting the increasing demand for energy-efficient, compact, and long-lasting electronic products across various industries. Keywords: reverse leakage current, Schottky diode problem, energy waste, thermal management, power efficiency, device reliability, semiconductor challenge.","question":"What problem does Trench Schottky Rectifier Device and Method for Manufacturing the Same solve?"},{"answer":"The patent for the \"Trench Schottky Rectifier Device and Method for Manufacturing the Same\" (US-9853120) was filed on November 23, 2016, and published on December 26, 2017. The patent document lists the inventors and assignee, though this information was not provided in the prompt. Typically, the inventors would be individuals who conceived the novel aspects of the device and its manufacturing process, while the assignee would be the company or institution to whom the patent rights have been assigned.\n\nThese individuals or teams would have leveraged deep expertise in semiconductor physics, device engineering, and fabrication processes to develop this innovative solution. Their work involved understanding the limitations of existing Schottky diodes and conceiving a novel trench-based architecture combined with precise doping techniques to achieve the desired performance improvements. The development of such a complex semiconductor device requires a multidisciplinary approach and significant research and development efforts. Keywords: Trench Schottky Rectifier inventor, patent assignee, US-9853120, semiconductor research, device engineering, patent filing date.","question":"Who invented Trench Schottky Rectifier Device and Method for Manufacturing the Same?"},{"answer":"The Trench Schottky Rectifier Device and Method for Manufacturing the Same offers several significant benefits that address critical needs in power electronics:\n\n1.  **Dramatically Reduced Reverse Leakage Current:** This is the primary benefit, leading to much lower energy waste when the device is in its 'off' state. This translates directly into higher power conversion efficiency for the overall system.\n2.  **Improved Power Efficiency:** By minimizing leakage, the device ensures more power is delivered to the load and less is lost as heat. This is crucial for energy-intensive applications and contributes to greener electronics.\n3.  **Enhanced Thermal Performance:** Less leakage current means less self-heating within the device. This allows for cooler operation, reducing the need for large heatsinks and enabling more compact designs. It also helps in maintaining performance at higher ambient temperatures.\n4.  **Increased Device Reliability and Lifespan:** Lower operating temperatures and reduced electrical stress on the semiconductor material lead to a longer operational life for the rectifier and the systems it powers, reducing maintenance and replacement costs.\n5.  **Optimized Trade-off:** The innovation effectively breaks the traditional trade-off between low forward voltage drop and low reverse leakage, providing designers with a component that excels in both crucial aspects simultaneously. Keywords: Trench Schottky Rectifier benefits, energy efficiency, reduced leakage, thermal stability, device reliability, power conversion, semiconductor advantages.","question":"What are the key benefits of Trench Schottky Rectifier Device and Method for Manufacturing the Same?"},{"answer":"The Trench Schottky Rectifier Device and Method for Manufacturing the Same distinguishes itself from prior art through a unique combination of structural design and fabrication techniques, particularly in how it integrates leakage suppression mechanisms. Traditional planar Schottky diodes offer speed but suffer from high reverse leakage. While trench-based Schottky diodes (TSBDs) improve breakdown voltage, many still exhibit considerable leakage.\n\nMore advanced solutions like Junction Barrier Controlled Schottky (JBS) or Merged PIN Schottky (MPS) diodes also integrate PN junctions to suppress leakage. However, this patent's innovation lies in the precise, self-aligned formation of these PN junctions *beneath* the trenches via ion implantation, with insulated trench sidewalls. This specific configuration creates an extremely effective 'pinch-off' mechanism that is superior in simultaneously achieving very low reverse leakage without significantly compromising the low forward voltage drop and fast switching speed inherent to Schottky contacts.\n\nUnlike some prior JBS/MPS designs where PN junctions might be formed alongside the Schottky contact or through more complex processes, this patent's method offers a highly controlled and manufacturable way to create these leakage-blocking regions directly where they are most effective, leading to a superior overall performance trade-off curve. Keywords: Trench Schottky Rectifier vs prior art, Schottky diode innovation, JBS, MPS, leakage suppression, semiconductor differentiation, patent comparison.","question":"How is Trench Schottky Rectifier Device and Method for Manufacturing the Same different from prior art?"},{"answer":"The Trench Schottky Rectifier Device and Method for Manufacturing the Same is poised to have a significant impact across a wide array of industries that rely on efficient and reliable power conversion. Its ability to dramatically reduce power loss and improve thermal performance makes it invaluable for applications demanding high energy efficiency and compact designs.\n\nKey industries that will be profoundly impacted include:\n\n1.  **Automotive:** Especially in Electric Vehicles (EVs) for onboard chargers, DC-DC converters, motor control units, and other power electronics where efficiency directly translates to extended range and battery life.\n2.  **Data Centers and Cloud Computing:** Server power supplies, uninterruptible power supplies (UPS), and power distribution units will benefit from reduced energy consumption and cooling costs, leading to a smaller carbon footprint.\n3.  **Consumer Electronics:** Smartphones, laptops, tablets, and other portable devices will see improvements in battery life, faster charging, and cooler operation.\n4.  **Renewable Energy:** Solar inverters, wind power converters, and energy storage systems will achieve higher efficiency in converting and managing renewable energy.\n5.  **Industrial Power Supplies:** For automation, robotics, LED lighting, and other industrial applications requiring robust, efficient, and reliable power delivery.\n\nThis innovation will enable the development of next-generation electronic products that are not only more powerful but also more sustainable and durable. Keywords: Trench Schottky Rectifier impact, power electronics industries, EV technology, data center efficiency, renewable energy, consumer electronics, industrial power.","question":"What industries will Trench Schottky Rectifier Device and Method for Manufacturing the Same impact?"},{"answer":"The patent for the \"Trench Schottky Rectifier Device and Method for Manufacturing the Same\" was filed on November 23, 2016. It was subsequently published on December 26, 2017, under the patent number US-9853120. The publication date indicates when the patent application became publicly accessible, detailing the invention's specifications, claims, and drawings.\n\nThe period between filing and publication allows for examination by patent offices and often involves several rounds of communication between the applicant and the examiner. The publication of the patent marks a significant milestone, making the technical details of the Trench Schottky Rectifier Device and Method for Manufacturing the Same available to the public and the broader industry. This allows other researchers, developers, and companies to understand the innovation, assess its potential, and consider licensing or further development based on its principles. Keywords: Trench Schottky Rectifier filing date, patent publication date, US-9853120, patent timeline, intellectual property, semiconductor patent history.","question":"When was Trench Schottky Rectifier Device and Method for Manufacturing the Same filed/granted?"},{"answer":"The commercial applications of the Trench Schottky Rectifier Device and Method for Manufacturing the Same are extensive, driven by its superior efficiency and reliability characteristics. Any application currently using or limited by conventional Schottky diodes can potentially benefit from this innovation.\n\nKey commercial applications include:\n\n1.  **Switch-Mode Power Supplies (SMPS):** Used in virtually all electronic devices, from consumer products to industrial equipment. This technology can lead to more efficient, smaller, and cooler SMPS units.\n2.  **DC-DC Converters:** Essential in power management for various systems, including automotive electronics, telecommunications infrastructure, and portable devices, where high efficiency and power density are critical.\n3.  **Power Factor Correction (PFC) Circuits:** Improving the efficiency of power delivery from the grid, reducing energy waste in large installations.\n4.  **Motor Drives:** Enhancing the efficiency and control of electric motors in industrial automation, robotics, and electric vehicles.\n5.  **LED Lighting:** Enabling more efficient and reliable LED drivers, extending the lifespan and reducing the operating costs of LED lighting systems.\n6.  **Renewable Energy Inverters:** Maximizing the conversion efficiency of solar panels and wind turbines, leading to greater energy harvest.\n\nUltimately, the Trench Schottky Rectifier Device and Method for Manufacturing the Same enables the creation of more advanced, energy-efficient, and reliable electronic products across numerous sectors, offering a compelling value proposition for manufacturers and end-users alike. Keywords: Trench Schottky Rectifier applications, commercial uses, SMPS, DC-DC converters, PFC, motor drives, LED lighting, renewable energy.","question":"What are the commercial applications of Trench Schottky Rectifier Device and Method for Manufacturing the Same?"},{"answer":"The Trench Schottky Rectifier Device and Method for Manufacturing the Same lays a strong foundation for future advancements in power semiconductor technology. Several key developments can be anticipated:\n\n1.  **Integration with Wide Bandgap Materials:** Expect to see this trench-based, PN junction integrated architecture adapted for wide bandgap (WBG) semiconductors like Silicon Carbide (SiC) and Gallium Nitride (GaN). WBG materials offer even higher breakdown voltages, faster switching, and superior high-temperature performance, and combining them with this patent's leakage suppression technique could lead to truly revolutionary power devices.\n2.  **Further Optimization of Trench Geometry and Doping Profiles:** Continuous research will likely focus on fine-tuning the dimensions of the trenches, the thickness of the insulating layers, and the precise doping concentrations and depths of the PN junctions. This optimization will aim to push the V_F vs. I_R trade-off curve even further, achieving near-ideal rectifier characteristics.\n3.  **Advanced Packaging Solutions:** As the devices become more efficient and smaller, the focus will shift to advanced packaging techniques that can fully leverage the performance gains, minimize parasitic inductances, and further improve thermal dissipation at the module level.\n4.  **Hybrid Integration:** The principles of the Trench Schottky Rectifier Device and Method for Manufacturing the Same could be integrated into more complex power integrated circuits (PICs), where multiple power components are combined on a single chip for highly compact and efficient power management solutions.\n\nThese future developments will solidify the Trench Schottky Rectifier Device and Method for Manufacturing the Same as a foundational technology for the next generation of ultra-efficient, compact, and reliable power electronics, driving innovation across the entire industry. Keywords: Trench Schottky Rectifier future, wide bandgap semiconductors, SiC, GaN, device optimization, advanced packaging, hybrid integration, power electronics roadmap.","question":"What are the future developments expected for Trench Schottky Rectifier Device and Method for Manufacturing the Same?"}],"topics":["Trench Schottky Rectifier Device and Method for Manufacturing the Same","Schottky rectifier","power electronics","leakage current suppression","semiconductor device","quest","enhanced","efficiency"],"tech_cluster":null},"seo":{"title":"Trench Schottky Rectifier Device: Leakage Current Suppression - US-9853120","description":"Discover the Trench Schottky Rectifier Device and Method for Manufacturing the Same, a patent revolutionizing power electronics by drastically suppressing reverse leakage current and boosting efficiency. Explore technical details and market impact.","keywords":["Trench Schottky Rectifier Device and Method for Manufacturing the Same","Schottky rectifier","power electronics","leakage current suppression","semiconductor device","energy efficiency","PN junction","ion implantation","power conversion","patent US-9853120","high-efficiency diode","power management","device reliability"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853120","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853120","citation_suggestion":"Patentable. \"Trench Schottky rectifier device and method for manufacturing the same\" (US-9853120). https://patentable.app/patents/US-9853120","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853120","json":"https://patentable.app/api/llm-context/US-9853120","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:04:20.180Z"}