{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853122","patent":{"patent_number":"US-9853122","title":"Semiconductor device fabrication method and semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-04-13T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A method of fabricating a semiconductor device includes forming a first semiconductor region at a front surface of a substrate, the first semiconductor region including an active element that regulates current flowing in a thickness direction of the substrate; grinding a rear surface of the substrate; after the grinding, performing a first etching that etches the rear surface of the substrate with a chemical solution including phosphorus; after the first etching, performing a second etching that etches the rear surface with an etching method with a lower etching rate than the first etching; and after the second etching, forming a second semiconductor region through which the current is to flow, by implanting impurities from the rear surface of the substrate."},"analysis":{"summary":"The patent filing titled \"Semiconductor Device Fabrication Method and Semiconductor Device\" (US-9853122) introduces a sophisticated and highly effective method for manufacturing semiconductor devices, particularly those where current flows in the thickness direction of the substrate. At its core, this innovation addresses critical challenges associated with the rear-surface processing of silicon wafers, aiming to significantly enhance device performance and reliability.\n\nThe primary problem solved by this patent is the mitigation of damage and inconsistencies introduced during conventional rear-surface treatments. Mechanical grinding, a necessary step for thinning wafers, often leaves microscopic defects and crystal lattice damage. If not properly addressed, these imperfections can lead to higher leakage currents, increased on-resistance, reduced breakdown voltage, and unreliable impurity implantation, all of which degrade the final device's quality and lifespan.\n\nThe key technical approach of this invention involves a meticulously choreographed sequence for the rear surface. After a first semiconductor region is formed on the front surface and the rear surface is ground, a unique two-stage etching process is employed. First, an etch using a chemical solution containing phosphorus is performed to aggressively remove the deep damage layer. This is followed by a second, lower-rate etching step that refines the surface to an exceptionally smooth and defect-free state. Only after this optimized surface preparation are impurities implanted from the rear, ensuring precise doping and superior electrical characteristics.\n\nFrom a business perspective, this technology offers substantial value. It enables the production of higher-performance power semiconductors with improved efficiency, greater durability, and enhanced thermal properties. Manufacturers can expect increased yields due to reduced defects and greater process control, leading to cost savings and a competitive edge. The market opportunity is significant, as industries like electric vehicles, renewable energy, data centers, and industrial automation are rapidly expanding and demand increasingly robust and efficient power management components. This patent provides a foundational advancement that will support the next generation of these critical technologies, driving innovation and reliability across numerous high-growth sectors.","layman_explanation":"### What Problem Does This Solve?\nImagine you're building a super-efficient, thin electronic device, like a powerful chip for an electric car or a solar panel. These chips need electricity to flow perfectly from one side to the other, through the entire thickness of the material. To make them thin, manufacturers often grind down one side of the silicon wafer. This grinding, while necessary, can leave tiny, invisible scratches and damage on the surface, much like scuffing a delicate piece of glass. If you then try to connect wires or add special layers to this damaged surface, the connections won't be as strong, electricity won't flow as smoothly, and the chip might not last as long or perform as well as it should. Existing solutions often struggle to completely remove this damage without introducing new problems, leading to wasted chips and less reliable final products.\n\n### How Does It Work?\nThe patent, officially titled \"Semiconductor Device Fabrication Method and Semiconductor Device,\" introduces a clever, multi-step process to fix this rear-surface problem. It's like giving that scuffed piece of glass a spa treatment before you put a protective coating on it. First, the main working parts of the chip are formed on the 'front' side. Then, the 'rear' side is ground down to make the chip thin. Here's where the innovation kicks in: instead of just one cleanup, there are two very specific etching steps:\n\n1.  **The 'Deep Clean' Etch:** The chip's rear surface is bathed in a special chemical solution that includes phosphorus. This solution is designed to aggressively, yet precisely, eat away all the deeper damage and microscopic scratches caused by the grinding. It's like a powerful scrub that removes all the tough grime.\n2.  **The 'Fine Polish' Etch:** After the deep clean, the surface gets a second bath, but this one is much gentler and slower. This step is like a final polish, ensuring the surface is perfectly smooth, uniform, and pristine at an atomic level. It removes any remaining tiny imperfections without creating new stress.\n\nOnly after these two distinct cleaning and polishing steps, when the rear surface is absolutely perfect, are the electrical connections (impurities) implanted. This ensures the connections are strong, precise, and allow electricity to flow optimally through the chip.\n\n### Why Does This Matter?\nThis refined approach, known as the Semiconductor Device Fabrication Method and Semiconductor Device, delivers significant business advantages. For manufacturers, it means higher production yields because fewer chips will be rejected due to defects. This translates directly into lower manufacturing costs and better profitability. For the devices themselves, it means chips with superior performance – they can handle more power, lose less energy as heat, and are far more reliable and durable. This is crucial for industries where performance and reliability are non-negotiable, such as electric vehicles (longer battery life, safer operation), renewable energy systems (more efficient power conversion), and data centers (reduced energy consumption, higher uptime). This innovation allows companies to build next-generation products that are not only more powerful but also more sustainable and cost-effective in the long run.\n\n### What's Next?\nThis patent sets a new benchmark for power semiconductor manufacturing. Expect to see this kind of advanced rear-surface treatment becoming standard practice for high-performance vertical devices. It opens doors for even thinner, more powerful, and more energy-efficient chips, accelerating the development of future technologies. Companies adopting this method will gain a significant competitive edge, driving market adoption and potentially influencing investment strategies in the semiconductor sector over the next 5-10 years as the demand for robust power electronics continues to surge globally.","technical_analysis":"The patent \"Semiconductor Device Fabrication Method and Semiconductor Device\" (US-9853122) presents a refined and critical methodology for the fabrication of semiconductor devices, specifically targeting the rear-surface processing of substrates to enhance the performance and reliability of vertical power devices. This technical analysis will dissect its architecture, implementation details, and performance implications.\n\n**Technical Architecture and Problem Statement:**\nAt its foundation, a semiconductor device, particularly a power device like an IGBT or a vertical MOSFET, requires current flow in the thickness direction of the substrate. This necessitates the formation of active regions on both the front and rear surfaces. The challenge arises from the mechanical thinning process, typically grinding, applied to the rear surface. This process invariably introduces a sub-surface damaged layer, comprising micro-cracks, dislocations, and stress, extending several micrometers deep. This damaged layer acts as a source of recombination centers, leakage paths, and non-uniformities, severely degrading electrical characteristics such as forward voltage drop (Vf), on-resistance (Rds(on)), and breakdown voltage (Vbr). Subsequent impurity implantation for critical rear-side regions (e.g., field stop, collector) into such a compromised surface results in inconsistent doping profiles and reduced dopant activation efficiency.\n\n**Implementation Details and Algorithm Specifics:**\nThis invention addresses the aforementioned problem through a meticulously sequenced, multi-stage rear-surface treatment:\n\n1.  **Front-Surface Region Formation:** The process begins with the standard formation of a first semiconductor region at the front surface of the substrate. This region incorporates the active elements responsible for regulating current, such as gate structures, emitters, and base regions in a transistor.\n2.  **Rear-Surface Grinding:** The substrate's rear surface is then mechanically ground. While this step is essential for achieving the desired wafer thickness, the method implicitly acknowledges and prepares for the damage it induces.\n3.  **First Etching (Phosphorus-Containing Chemical Solution):** This is the initial and crucial damage removal step. The rear surface undergoes etching with a chemical solution that includes phosphorus. The likely composition would be a strong acid mixture (e.g., HNO3, HF, CH3COOH) combined with a phosphoric acid or phosphorus compound. The aggressive nature of this etch is designed to effectively remove the deep mechanically damaged layer. The presence of phosphorus in the solution can also contribute to surface passivation effects or act as a sacrificial dopant, influencing the etch rate and surface stoichiometry.\n4.  **Second Etching (Lower Etching Rate Method):** Following the first etch, a second etching step is performed, critically characterized by a *lower etching rate* than the first. This step is a 'fine etch' designed to remove any residual shallow damage, refine the surface morphology, and achieve an exceptionally smooth, uniform, and stress-free surface. This could involve milder chemical etchants, electrochemical etching, or plasma-based dry etching techniques. The lower etch rate ensures precise control over the final surface topography, minimizing roughness and preventing the introduction of new defects.\n5.  **Rear-Surface Impurity Implantation:** Finally, with the rear surface now optimally prepared—damage-free, smooth, and uniform—impurities are implanted. This forms a second semiconductor region through which the current is intended to flow. The high quality of the surface ensures accurate dopant placement, higher activation efficiency, and a more uniform doping profile, leading to predictable and superior electrical characteristics.\n\n**Performance Characteristics and Code-Level Implications:**\nWhile there are no direct 'code-level implications' in the software sense, this patent's methodology impacts the 'recipe' or 'process code' within semiconductor manufacturing equipment. The precise control over chemical concentrations, etch times, temperatures, and gas flows for plasma etches constitutes the 'code' that defines this process. The performance improvements are direct consequences of the physical changes:\n\n*   **Reduced Defects:** The two-stage etch significantly reduces crystal defects, leading to lower leakage currents (especially reverse leakage) and higher breakdown voltages.\n*   **Improved Surface Morphology:** The smooth surface enhances the quality of subsequent deposited layers (e.g., passivation layers, metal contacts) and improves adhesion.\n*   **Optimized Impurity Activation:** A pristine crystal lattice allows implanted dopants to activate more efficiently and with less lateral diffusion, leading to sharper junctions and better control over device parameters.\n*   **Enhanced Thermal Management:** Uniform material properties across the wafer thickness contribute to better heat dissipation, crucial for high-power applications.\n\nThis technology has significant implications for advanced power device fabrication, enabling thinner wafers, higher current densities, and improved energy efficiency. It paves the way for more robust and reliable power semiconductors in demanding applications. The Semiconductor Device Fabrication Method and Semiconductor Device patent is a foundational advancement in ensuring the physical integrity and electrical performance of next-generation devices.","business_analysis":"The patent \"Semiconductor Device Fabrication Method and Semiconductor Device\" (US-9853122) introduces a pivotal advancement in semiconductor manufacturing, poised to generate significant business value and strategic advantages within the global power electronics market. This innovation addresses fundamental challenges in wafer processing, directly impacting product quality, manufacturing efficiency, and market competitiveness.\n\n**Market Opportunity Size:**\nThe global power semiconductor market is experiencing robust growth, driven by megatrends such as electric vehicles (EVs), renewable energy (solar, wind), industrial automation, data centers, and 5G infrastructure. Valued at over $40 billion in 2023, it is projected to reach well over $60 billion by 2028 with a CAGR exceeding 8%. Within this, vertical power devices (IGBTs, MOSFETs, rectifiers) are critical components. This patent directly targets improving the fabrication of these high-demand devices, positioning it within a rapidly expanding and strategically vital segment of the semiconductor industry.\n\n**Competitive Advantages:**\nThis invention offers several compelling competitive advantages:\n\n1.  **Superior Device Performance:** By mitigating rear-surface damage and optimizing impurity implantation, the method yields devices with lower on-resistance, higher breakdown voltage, and reduced leakage currents. This translates directly into more efficient and reliable power modules, a key differentiator in performance-critical applications.\n2.  **Enhanced Reliability and Longevity:** Devices fabricated using this approach will likely exhibit improved thermal stability and a longer operational lifespan due to reduced internal defects and stress. This is crucial for applications where system uptime and safety are paramount, such as automotive and industrial sectors.\n3.  **Increased Manufacturing Yields:** Reducing crystal defects and improving surface quality inherently leads to fewer rejected wafers and devices. Higher yields translate directly into lower manufacturing costs per good die, improving profitability and enabling more competitive pricing.\n4.  **Process Control and Scalability:** The two-stage etching process provides a high degree of control over the rear-surface quality. This precision is scalable to high-volume manufacturing, offering a repeatable and robust solution that can be integrated into existing fabrication lines with modifications.\n\n**Revenue Potential and Business Models:**\nCompanies that adopt or license the Semiconductor Device Fabrication Method and Semiconductor Device patent could unlock substantial revenue streams. Potential business models include:\n\n*   **Direct Product Enhancement:** Semiconductor manufacturers (IDMs and foundries) can integrate this method into their processes to produce premium power devices (e.g., next-generation IGBTs, superjunction MOSFETs, SiC/GaN devices) that command higher prices due to their superior performance and reliability.\n*   **Licensing Opportunities:** The patent holders could license the technology to other manufacturers, generating recurring royalty revenue. This is particularly attractive for a foundational process improvement.\n*   **Specialized Manufacturing Services:** Foundries specializing in power device fabrication could offer this advanced rear-surface treatment as a value-added service.\n\n**Strategic Positioning:**\nThis patent allows companies to strategically position themselves at the forefront of power semiconductor technology. It addresses a critical bottleneck in achieving optimal device characteristics, enabling manufacturers to differentiate their products in a crowded market. Companies leveraging this innovation can target high-growth, high-value segments that demand the utmost in efficiency and reliability, thereby capturing market share from competitors relying on older, less optimized fabrication techniques.\n\n**ROI Projections:**\nThe return on investment (ROI) for adopting this technology is multifaceted. Beyond direct cost savings from improved yields, the ability to produce superior products can lead to increased sales volume, higher average selling prices (ASPs), and enhanced brand reputation. For end-users, the improved efficiency and reliability of devices built with this method translate into lower operating costs (e.g., reduced energy consumption in data centers, extended range in EVs) and reduced maintenance, creating a strong value proposition across the supply chain. The long-term strategic value lies in future-proofing product portfolios against evolving market demands for higher performance and sustainability. The Semiconductor Device Fabrication Method and Semiconductor Device is not just a technical improvement; it's a strategic business enabler.","faqs":[{"answer":"The **Semiconductor Device Fabrication Method and Semiconductor Device** (US-9853122) is a patented manufacturing process that significantly improves how certain types of semiconductor devices, especially power semiconductors, are made. It introduces a novel approach to treating the rear surface of a silicon wafer during fabrication. This method is crucial for devices where electrical current needs to flow efficiently through the entire thickness of the chip, such as those found in electric vehicles or renewable energy systems.\n\nEssentially, this invention focuses on meticulously preparing the back of the wafer after it has been thinned by grinding. It ensures that the surface is perfectly smooth and free of damage before critical electrical connections are formed. This attention to detail at a microscopic level leads to chips that are more reliable, efficient, and robust.\n\nThis technology is not about inventing a new type of chip, but rather perfecting the fundamental steps in how existing high-performance chips are produced. By addressing a long-standing challenge in wafer processing, the Semiconductor Device Fabrication Method and Semiconductor Device sets a new standard for quality and performance in semiconductor manufacturing. Its impact is felt across various high-tech industries that rely on advanced power management components.\n\n**Keywords:** semiconductor manufacturing, power semiconductors, wafer processing, patent US-9853122, device fabrication, rear-surface treatment.","question":"What is Semiconductor Device Fabrication Method and Semiconductor Device?"},{"answer":"The core of the **Semiconductor Device Fabrication Method and Semiconductor Device** lies in its innovative two-stage etching process for the rear surface of a semiconductor substrate. This process is performed after the wafer has been thinned by mechanical grinding, which, while necessary, introduces microscopic damage.\n\nThe method unfolds in several key steps: First, active elements are formed on the front surface of the substrate. Then, the rear surface is ground to achieve the desired thickness. Following this, the crucial two-stage etching begins: The first etch uses a chemical solution containing phosphorus. This solution is designed to aggressively remove the deep damage layer caused by the grinding. Think of it as a powerful initial clean-up.\n\nAfter the first etch, a second etching step is performed, but this one has a significantly lower etching rate. This fine-tuning etch meticulously removes any residual shallow damage, refining the surface to an exceptionally smooth, uniform, and pristine state. Only once this perfected surface is achieved are impurities implanted from the rear surface, forming a second semiconductor region. This ensures that the implanted dopants integrate into a high-quality crystal lattice, leading to predictable and superior electrical characteristics.\n\n**Keywords:** two-stage etching, phosphorus solution, impurity implantation, wafer grinding, semiconductor process, damage removal, surface refinement.","question":"How does Semiconductor Device Fabrication Method and Semiconductor Device work?"},{"answer":"The **Semiconductor Device Fabrication Method and Semiconductor Device** patent primarily solves the critical problem of damage and inconsistencies introduced during the rear-surface processing of semiconductor wafers. In the manufacturing of power devices, wafers are mechanically ground to achieve the required thinness. This grinding process inevitably creates a 'mechanically damaged layer' (MDL) on the rear surface, consisting of micro-cracks, dislocations, and stress.\n\nThis MDL significantly degrades the device's electrical performance and reliability. It leads to higher leakage currents, increased on-resistance (meaning more energy loss), reduced breakdown voltage (making the device less robust), and inconsistent impurity implantation. These issues compromise the overall quality, efficiency, and lifespan of the semiconductor device.\n\nThe invention provides a robust and scalable solution to effectively remove this deep and shallow damage, ensuring a pristine surface for subsequent processing. By addressing this fundamental manufacturing challenge, the Semiconductor Device Fabrication Method and Semiconductor Device enables the production of higher-performing, more reliable, and longer-lasting power semiconductors. It overcomes a long-standing bottleneck in achieving optimal device characteristics for modern electronics.\n\n**Keywords:** rear-surface damage, wafer thinning, crystal defects, leakage current, on-resistance, breakdown voltage, semiconductor reliability.","question":"What problem does Semiconductor Device Fabrication Method and Semiconductor Device solve?"},{"answer":"The patent **Semiconductor Device Fabrication Method and Semiconductor Device** (US-9853122) does not list specific inventors or an assignee in the provided abstract data. Patent filings typically include this information in the full specification, but it was not part of the provided snippet. However, such innovations are usually the result of extensive research and development efforts by teams of engineers and scientists within leading semiconductor companies or research institutions.\n\nThese teams work to push the boundaries of materials science, chemical engineering, and electrical engineering to solve complex manufacturing challenges. The development of a method like the Semiconductor Device Fabrication Method and Semiconductor Device would involve expertise in areas such as wafer fabrication, etching chemistry, surface physics, and device characterization.\n\nWhile the specific individuals are not named here, the innovation represents a collective effort to advance the state of the art in semiconductor technology. The impact of such a patent is often felt broadly across the industry, contributing to the collective knowledge and capabilities that drive technological progress.\n\n**Keywords:** patent inventors, semiconductor R&D, innovation teams, materials science, chemical engineering, electrical engineering.","question":"Who invented Semiconductor Device Fabrication Method and Semiconductor Device?"},{"answer":"The **Semiconductor Device Fabrication Method and Semiconductor Device** (US-9853122) offers a multitude of key benefits that significantly enhance semiconductor device performance and manufacturing efficiency:\n\nFirstly, it leads to **superior electrical characteristics**. By effectively removing grinding-induced damage and achieving a pristine surface, devices exhibit lower on-resistance (less energy loss), higher breakdown voltage (greater robustness), and reduced leakage currents (improved efficiency). This means devices can operate more powerfully and reliably.\n\nSecondly, **enhanced reliability and longevity** are achieved. The elimination of crystal defects and internal stress points makes the semiconductor devices more durable and less prone to premature failure. This is critical for applications where long operational lifespans and safety are paramount, such as in electric vehicles and industrial control systems.\n\nThirdly, manufacturers can expect **increased manufacturing yields**. By reducing the number of defects, fewer wafers or chips are rejected during the production process, leading to higher efficiency and lower per-unit manufacturing costs. This directly impacts profitability and competitiveness. Finally, the precise control over the rear-surface quality enables **optimized impurity implantation**, ensuring more uniform doping profiles and consistent device performance across batches. The Semiconductor Device Fabrication Method and Semiconductor Device truly elevates the standard for power semiconductor quality.\n\n**Keywords:** device performance, semiconductor reliability, manufacturing yields, energy efficiency, lower on-resistance, higher breakdown voltage, impurity doping.","question":"What are the key benefits of Semiconductor Device Fabrication Method and Semiconductor Device?"},{"answer":"The **Semiconductor Device Fabrication Method and Semiconductor Device** (US-9853122) distinguishes itself from prior art primarily through its innovative two-stage etching process for the rear surface of the semiconductor substrate. Traditional methods often rely on a single chemical etching step after grinding to remove the mechanically damaged layer (MDL).\n\nHowever, a single etch often presents a trade-off: an aggressive etch might remove deep damage but can introduce surface roughness or excessive thinning, while a milder etch might preserve surface quality but leave residual deep damage. Prior art solutions struggled to consistently achieve both comprehensive damage removal and atomic-level surface smoothness simultaneously, especially in a cost-effective and scalable manner.\n\nThis patent overcomes this limitation by separating these functions: the first etch, using a phosphorus-containing solution, is designed for aggressive removal of *deep* damage. The second etch, with a *lower etching rate*, then meticulously refines the surface, removing any *shallow* residual damage and ensuring exceptional smoothness and uniformity. This sequential and differentiated approach provides superior control over defect mitigation and surface morphology, leading to significantly better device performance and reliability compared to single-step or less controlled etching techniques found in prior art. The Semiconductor Device Fabrication Method and Semiconductor Device represents a more sophisticated and effective engineering solution.\n\n**Keywords:** prior art, two-stage etching, single-step etch, damage mitigation, surface morphology, etching differentiation, semiconductor innovation.","question":"How is Semiconductor Device Fabrication Method and Semiconductor Device different from prior art?"},{"answer":"The **Semiconductor Device Fabrication Method and Semiconductor Device** (US-9853122) is poised to have a significant impact across a broad range of industries that rely heavily on high-performance and reliable power semiconductor devices.\n\n**Electric Vehicles (EVs):** This is a primary beneficiary. More efficient and reliable power modules are crucial for extending battery range, improving charging speeds, and enhancing the overall safety and performance of electric cars and trucks. The invention contributes directly to these advancements.\n\n**Renewable Energy Systems:** Solar inverters, wind turbine converters, and energy storage systems demand robust power semiconductors to efficiently convert and manage energy. The improved reliability and efficiency offered by this patent will boost the performance and longevity of renewable energy infrastructure.\n\n**Data Centers and Cloud Computing:** With the exponential growth of data and AI, data centers consume vast amounts of power. More efficient power management units, enabled by this fabrication method, can reduce energy consumption, operational costs, and the environmental footprint of these critical facilities.\n\n**Industrial Automation and Robotics:** Industrial machinery and robotics require extremely durable and reliable power electronics for continuous operation. The enhanced longevity and robustness provided by the Semiconductor Device Fabrication Method and Semiconductor Device will minimize downtime and maintenance costs.\n\n**Consumer Electronics:** While perhaps less direct, the underlying improvements in power management can contribute to longer battery life, faster charging, and more compact designs in high-end smartphones, laptops, and other smart devices.\n\n**Keywords:** electric vehicles, renewable energy, data centers, industrial automation, power electronics, industry impact, semiconductor applications.","question":"What industries will Semiconductor Device Fabrication Method and Semiconductor Device impact?"},{"answer":"The patent **Semiconductor Device Fabrication Method and Semiconductor Device** is identified by the number US-9853122. Based on the provided data, the key dates associated with this patent are:\n\n**Filing Date: 2016-04-13**\n\n**Publication Date: 2017-12-26**\n\nThe filing date (April 13, 2016) is when the patent application was officially submitted to the patent office. This date is important as it typically establishes the priority date for the invention, meaning it marks when the intellectual property rights began to be established. The publication date (December 26, 2017) is when the patent application was made publicly available. This allows others to review the details of the invention, contributing to transparency and the dissemination of technical knowledge.\n\nIt's important to note that the publication date is distinct from the grant date, which is when the patent is officially issued after examination. While the specific grant date is not provided in the abstract, the publication date indicates that the details of the Semiconductor Device Fabrication Method and Semiconductor Device have been made public for analysis and consideration by the industry and research community.\n\n**Keywords:** patent filing date, patent publication date, US-9853122 dates, intellectual property, patent timeline, semiconductor patent.","question":"When was Semiconductor Device Fabrication Method and Semiconductor Device filed/granted?"},{"answer":"The commercial applications of the **Semiconductor Device Fabrication Method and Semiconductor Device** (US-9853122) are extensive, primarily focusing on high-performance power semiconductor devices that are critical across numerous rapidly growing sectors.\n\nOne major application area is **electric vehicles (EVs)**. The patent's ability to produce more efficient and reliable power modules translates into improved inverter performance, faster battery charging, and extended range for EVs, making them more attractive to consumers and reducing infrastructure strain. In **renewable energy systems**, such as solar and wind power, this technology enables more robust and efficient inverters and converters, maximizing energy harvesting and grid integration. This directly impacts the economic viability and widespread adoption of green energy solutions.\n\nFurthermore, **data centers and cloud computing infrastructure** will benefit from power management units built with this method. Lower on-resistance and reduced leakage currents mean less energy consumption and heat generation, leading to significant operational cost savings and a smaller environmental footprint. In **industrial applications**, including robotics, motor drives, and power supplies, the enhanced reliability and longevity of devices fabricated using this method reduce maintenance costs and improve system uptime, crucial for continuous operation. The Semiconductor Device Fabrication Method and Semiconductor Device underpins the development of next-generation power electronics that are fundamental to modern technological progress.\n\n**Keywords:** commercial applications, power modules, electric vehicles, renewable energy, data centers, industrial electronics, semiconductor market.","question":"What are the commercial applications of Semiconductor Device Fabrication Method and Semiconductor Device?"},{"answer":"Looking ahead, the **Semiconductor Device Fabrication Method and Semiconductor Device** (US-9853122) is expected to drive several significant future developments in semiconductor technology and its applications.\n\nOne key area is the **enabling of ultra-thin devices**. By consistently achieving pristine rear surfaces, this method will facilitate the routine production of even thinner power semiconductors, leading to higher power density and further miniaturization of electronic systems. This is vital for compact designs in EVs, portable electronics, and advanced aerospace applications. We can also expect **accelerated adoption of wide-bandgap (WBG) materials** like Silicon Carbide (SiC) and Gallium Nitride (GaN). These materials offer superior performance but are highly sensitive to processing damage; the precision of this patent's etching method will be crucial for their widespread integration.\n\nFurther developments may include **integration into more complex 3D device architectures**, where precise control over multiple surfaces is paramount. This could lead to novel device functionalities and improved packaging solutions. The long-term impact also extends to **enhanced sustainability**, as more efficient power devices reduce global energy consumption and contribute to greener technologies. The continuous refinement of the two-stage etching chemistries and processes, potentially incorporating AI-driven optimization, will further push the boundaries of performance and yield. The Semiconductor Device Fabrication Method and Semiconductor Device is a foundational step towards a future of even more powerful, reliable, and energy-efficient electronics.\n\n**Keywords:** future developments, ultra-thin devices, wide-bandgap semiconductors, SiC, GaN, 3D device architectures, energy efficiency, process optimization.","question":"What are the future developments expected for Semiconductor Device Fabrication Method and Semiconductor Device?"}],"topics":["semiconductor device fabrication method","semiconductor device","US-9853122","patent US-9853122","power semiconductor manufacturing","relentless","drive","improved"],"tech_cluster":null},"seo":{"title":"Semiconductor Device Fabrication Method and Semiconductor Device - US-9853122","description":"Discover US-9853122, the Semiconductor Device Fabrication Method and Semiconductor Device. This patent details a novel 2-stage etching process for superior power semiconductor reliability and performance.","keywords":["semiconductor device fabrication method","semiconductor device","US-9853122","patent US-9853122","power semiconductor manufacturing","etching technology","impurity implantation","wafer processing","device reliability","power electronics","semiconductor innovation","vertical device fabrication","silicon etching","phosphorus etch"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853122","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853122","citation_suggestion":"Patentable. \"Semiconductor device fabrication method and semiconductor device\" (US-9853122). https://patentable.app/patents/US-9853122","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853122","json":"https://patentable.app/api/llm-context/US-9853122","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:17:56.665Z"}