{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853123","patent":{"patent_number":"US-9853123","title":"Semiconductor structure and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2015-10-28T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":28,"abstract":"A semiconductor structure includes a substrate having thereon a dielectric layer. An opening is formed in the dielectric layer. The opening includes a bottom surface and a sidewall surface. A diffusion barrier layer is conformally disposed along the sidewall surface and the bottom surface of the opening. A nucleation metal layer is conformally disposed on the diffusion barrier layer. A bulk metal layer is disposed on the nucleation metal layer. A film-growth retarding layer is disposed between the nucleation metal layer and the bulk metal layer."},"analysis":{"summary":"The **Semiconductor Structure and Fabrication Method Thereof** patent (US-9853123) introduces a novel approach to constructing highly reliable metallic interconnects within advanced integrated circuits. This innovation centers on a meticulously engineered layering sequence designed to achieve void-free metal filling in microscopic openings.\n\nAt its core, the problem being solved is the persistent challenge of forming defect-free metal lines (vias and trenches) as semiconductor device features shrink. Traditional metallization methods often lead to voids, poor adhesion, and increased susceptibility to electromigration, all of which degrade chip performance, reliability, and manufacturing yields. The invention directly addresses these limitations, critical for the continued scaling of microelectronic devices.\n\nThe key technical approach involves a substrate with a dielectric layer containing an opening. Within this opening, a conformal diffusion barrier layer is first deposited, followed by a conformal nucleation metal layer. The pivotal innovation is the inclusion of a thin **film-growth retarding layer** positioned strategically between the nucleation metal layer and the subsequent bulk metal layer. This retarding layer precisely controls the kinetics of bulk metal deposition, promoting a 'bottom-up' filling mechanism that ensures complete, void-free metal integration.\n\nFrom a business value perspective, this technology offers significant advantages. It dramatically enhances the reliability and longevity of semiconductor devices, reducing warranty claims and improving customer satisfaction. Furthermore, by minimizing defects and increasing the consistency of interconnect formation, the patent leads to higher manufacturing yields and reduced production costs. This translates into more efficient operations and a stronger competitive position for chip manufacturers adopting this method.\n\nLooking at the market opportunity, this innovation is vital for industries dependent on high-performance and reliable electronics, including advanced computing, artificial intelligence, autonomous vehicles, and the Internet of Things. As these sectors demand ever-smaller, faster, and more robust chips, the Semiconductor Structure and Fabrication Method Thereof provides a foundational technology to meet these needs, unlocking new possibilities for device design and performance across a multi-billion dollar semiconductor market.","layman_explanation":"### What Problem Does This Solve?\nImagine the intricate internal workings of a modern microchip. It's a vast city of microscopic components connected by millions of tiny 'roads' made of metal. These roads, or interconnects, carry electrical signals at incredible speeds. As chips become more powerful and compact, these roads have to be built in incredibly small, narrow trenches and holes. The problem is, it's extremely difficult to fill these tiny spaces perfectly with metal. Often, traditional manufacturing methods leave behind tiny air bubbles or 'voids' within these metal roads. These voids are like potholes; they disrupt the flow of electricity, make the chip slower, less reliable, and more prone to breaking down prematurely. For businesses, this means lower manufacturing yields, costly product failures, and a limit to how small and powerful chips can become.\n\n### How Does It Work?\nThe **Semiconductor Structure and Fabrication Method Thereof** patent introduces a clever solution by essentially perfecting the process of building these microscopic metal roads. Think of it like a highly specialized construction crew for nano-roads. Instead of just pouring the main road material (bulk metal) into the ditch, this innovation adds a few crucial preparatory steps and a 'smart' guide.\n\nFirst, a protective lining (diffusion barrier layer) is applied to the ditch walls to prevent the road material from seeping into the surrounding ground. Then, a 'primer' (nucleation metal layer) is laid down to ensure the main road material sticks well. The real genius, however, is the introduction of a super-thin, almost invisible 'road-growth director' (film-growth retarding layer) right before the main road material is poured. This director's job is to subtly influence how the main road material fills the ditch. Instead of growing from the top down and potentially trapping air bubbles, it ensures the material fills neatly and completely from the bottom up, like water filling a glass. This precise control guarantees a solid, bubble-free road every single time.\n\n### Why Does This Matter?\nThis innovation matters immensely for any business relying on or producing advanced electronics. Firstly, it means significantly **more reliable products**. Chips built with this method will last longer and perform more consistently, reducing warranty claims and enhancing brand reputation. Secondly, it leads to **higher manufacturing efficiency and lower costs**. By eliminating defects like voids, chip manufacturers can produce more usable chips from each silicon wafer, boosting yields and profitability. Thirdly, this technology is a **key enabler for future innovation**. As we demand even smaller, faster, and more energy-efficient devices (think AI, autonomous vehicles, advanced IoT), the ability to build perfect interconnects is fundamental. This patent allows companies to push the boundaries of chip design and performance without being held back by manufacturing limitations.\n\n### What's Next?\nThe immediate future will see this technology integrated into the manufacturing processes of leading semiconductor foundries, particularly for advanced process nodes where interconnect reliability is most critical. Expect to see chips incorporating this method powering the next generation of high-performance computing, AI, and edge devices. Long-term, the principles behind this patent could inspire further innovations in material science and deposition techniques, potentially leading to new materials for interconnects or even more complex 3D chip architectures. For investors, this represents a foundational technology underpinning the growth of the entire digital economy, offering a competitive edge to companies that adopt or license it.","technical_analysis":"The **Semiconductor Structure and Fabrication Method Thereof** patent (US-9853123) presents a sophisticated solution for the critical metallization step in advanced semiconductor manufacturing. This innovation directly addresses the challenges of achieving void-free, highly conductive interconnects in high-aspect-ratio features, a bottleneck for continued device scaling and reliability.\n\n**Technical Architecture and Layering Sequence:**\nAt the heart of this invention is a meticulously designed multi-layer stack within an opening (e.g., via or trench) formed in a dielectric layer on a substrate. The sequence of deposition is crucial:\n1.  **Substrate and Dielectric Layer:** The foundation is a semiconductor substrate (e.g., silicon) with an overlying dielectric layer (e.g., SiO2, low-k dielectric) patterned with openings to define the interconnect pathways.\n2.  **Diffusion Barrier Layer:** A conformal layer is deposited along the sidewall and bottom surfaces of the opening. Common materials include TaN, TiN, Ru, or Mn. This layer's primary function is to prevent the interdiffusion of the bulk metal (typically copper) into the dielectric material, which would lead to increased leakage currents and device failure. Conformal deposition, often achieved via Atomic Layer Deposition (ALD) or advanced Chemical Vapor Deposition (CVD), is essential for uniform coverage in complex geometries.\n3.  **Nucleation Metal Layer:** Conformally disposed on the diffusion barrier layer, this layer (e.g., Cu, Co, Ru, Mn) serves as a seed layer for the subsequent bulk metal deposition. It promotes uniform crystal growth, ensures good adhesion to the barrier, and facilitates the initiation of filling. Its conformality is also key to preventing gaps at the barrier interface.\n4.  **Film-Growth Retarding Layer:** This is the core technical breakthrough. Positioned between the nucleation metal layer and the bulk metal layer, this ultrathin layer (e.g., Mn, MnO, Co, Ru, or their alloys) is engineered to modify the surface kinetics of the subsequent bulk metal deposition. Its precise composition and thickness are paramount to its functionality. This layer is typically deposited conformally.\n5.  **Bulk Metal Layer:** The main conductive material, usually copper, is deposited on the film-growth retarding layer to fill the remainder of the opening. This is often done via ElectroChemical Deposition (ECD) or advanced CVD.\n\n**Implementation Details and Algorithm Specifics (Bottom-Up Filling):**\nThe film-growth retarding layer is designed to enable 'bottom-up' filling, also known as superfilling. In conventional ECD, plating additives (accelerators, suppressors, levelers) play a crucial role. The retarding layer influences how these additives interact with the growing metal surface. Specifically, it can:\n*   **Suppress surface activity:** The retarding layer can locally deactivate or modify the catalytic sites on the nucleation layer, particularly on the sidewalls and at the top entrance of the opening. This effectively slows down metal growth in these regions.\n*   **Control additive adsorption/consumption:** The retarding layer might preferentially adsorb or consume suppressor additives at the bottom of the opening, allowing accelerators to dominate growth. Alternatively, it might prevent accelerators from reaching the sidewalls/top effectively. This creates a differential growth rate, where the bottom of the feature grows faster than the top.\n*   **Form a transient passivating layer:** In some implementations, the retarding layer itself (e.g., Mn) can react with the plating solution to form a transient oxide (e.g., MnO) that temporarily retards growth. This layer is then consumed or displaced as the bulk metal grows, allowing for continuous, void-free filling.\n\nThis precise control over growth kinetics ensures that the opening is filled from the bottom upwards, preventing the premature 'pinch-off' at the mouth of the opening, which is the primary cause of void formation in high-aspect-ratio features.\n\n**Performance Characteristics and Code-Level Implications:**\nFrom a performance standpoint, the implementation of this technology directly impacts device reliability and electrical characteristics:\n*   **Reduced Resistivity:** Void-free copper fills result in lower effective line resistance, crucial for minimizing RC delay in high-speed circuits.\n*   **Enhanced Electromigration (EM) Resistance:** The elimination of voids removes critical nucleation sites for EM damage, significantly extending the operational lifetime of interconnects. This is a vital metric for advanced process nodes.\n*   **Improved Adhesion and Mechanical Robustness:** The well-defined layering sequence and void-free nature contribute to a mechanically stronger and more stable interconnect stack, reducing risks of delamination.\n*   **Higher Yields:** The primary manufacturing benefit is a substantial increase in chip yields due to the elimination of interconnect-related defects.\n\nWhile this patent is primarily about hardware fabrication, its implications for design and software are profound. Reliable interconnects mean designers can push clock speeds further and integrate more complex functionalities without worrying about physical limitations. For simulation and design tools, this innovation provides a more predictable physical layer, allowing for more accurate performance modeling and less need for conservative design rules to compensate for interconnect variability. This enables more aggressive scaling and performance targets in future chip architectures.","business_analysis":"The **Semiconductor Structure and Fabrication Method Thereof** patent (US-9853123) is not merely a technical refinement; it represents a strategic breakthrough with profound business implications for the global semiconductor industry. Its ability to produce highly reliable, void-free metallic interconnects addresses a critical pain point in advanced chip manufacturing, opening up substantial market opportunities and competitive advantages.\n\n**Market Opportunity Size:**\nThe global semiconductor market is projected to reach over a trillion dollars by the end of the decade, with interconnect technology being a foundational element for all advanced integrated circuits. As feature sizes continue to shrink (e.g., 7nm, 5nm, 3nm nodes), the challenges of reliable metallization become exponentially more complex and costly. The market for advanced metallization solutions, including deposition equipment and materials, is a multi-billion dollar segment within this larger industry. This patent directly targets the core of this segment, offering a solution that can unlock higher performance and reliability across virtually every semiconductor product line, from CPUs and GPUs to memory, AI accelerators, and IoT devices. The demand for such a fundamental improvement is pervasive and growing.\n\n**Competitive Advantages:**\nAdoption of the Semiconductor Structure and Fabrication Method Thereof provides significant competitive advantages:\n1.  **Superior Product Reliability:** Chips manufactured using this method will exhibit enhanced longevity and reduced failure rates, leading to stronger brand reputation and customer loyalty. This is particularly crucial in high-stakes applications like automotive, aerospace, and medical devices.\n2.  **Higher Manufacturing Yields:** By significantly reducing defects like voids, manufacturers can achieve higher good-die-per-wafer ratios. This translates directly into lower manufacturing costs, increased profitability, and better resource utilization, offering a substantial edge in a capital-intensive industry.\n3.  **Enabling Advanced Scaling:** The ability to reliably form interconnects at extremely small dimensions (high aspect ratios) allows companies to confidently pursue next-generation process nodes, staying ahead of competitors who might be struggling with conventional metallization limitations.\n4.  **Reduced Time-to-Market:** With fewer defects and more predictable performance, the development and qualification cycles for new products can be streamlined, accelerating time-to-market for innovative chip designs.\n\n**Revenue Potential and Business Models:**\nCompanies that license or implement this technology can realize revenue potential through:\n*   **Increased Chip Sales:** By offering more reliable and higher-performing products, chip manufacturers can command premium pricing and capture greater market share.\n*   **Licensing Fees:** As a patented technology, it offers opportunities for licensing to other semiconductor foundries, IDMs (Integrated Device Manufacturers), and equipment suppliers.\n*   **Materials and Equipment Sales:** Companies specializing in deposition equipment or specialized materials for the diffusion barrier, nucleation, and especially the film-growth retarding layers can see increased demand.\n*   **Service & Consulting:** Expertise in implementing this complex fabrication method could be a valuable service offering.\n\n**Strategic Positioning:**\nImplementing the Semiconductor Structure and Fabrication Method Thereof strategically positions a company as a leader in advanced semiconductor manufacturing. It signals a commitment to overcoming fundamental physical challenges and delivering cutting-edge performance. This can attract top talent, foster strategic partnerships, and secure long-term contracts with major technology companies seeking the most reliable and advanced components. It helps maintain a technological lead in an intensely competitive global market.\n\n**ROI Projections:**\nThe return on investment (ROI) for adopting this technology is multifaceted. Direct ROI comes from increased yields and reduced defect-related scrap. Indirect ROI stems from enhanced product reliability, which reduces warranty costs and strengthens brand perception. Furthermore, the ability to access and compete effectively in advanced process nodes unlocks future revenue streams that might otherwise be inaccessible. While specific numbers depend on scale and implementation, the potential for multi-million to multi-billion dollar impacts through yield improvements alone, coupled with competitive advantages, suggests a very strong ROI for early adopters and licensors of this crucial innovation. This patent is not just about making chips; it's about making the entire semiconductor ecosystem more robust and profitable.","faqs":[{"answer":"The **Semiconductor Structure and Fabrication Method Thereof** (US-9853123) is a patented innovation in the field of semiconductor manufacturing. It describes a novel design for the internal wiring, or interconnects, within microchips, along with a method for fabricating these structures. At its core, this patent introduces a sophisticated layering technique that ensures microscopic openings in a chip's insulating layers are filled perfectly with metal, without any defects.\n\nSpecifically, the invention details a structure that includes a substrate, a dielectric layer with an opening, a conformal diffusion barrier layer, a conformal nucleation metal layer, and crucially, a **film-growth retarding layer** positioned between the nucleation metal and the bulk metal layer. This precise arrangement is designed to control the metal deposition process, promoting a 'bottom-up' filling mechanism. This method effectively prevents the formation of voids, which are tiny air bubbles or gaps that can severely compromise the performance and reliability of integrated circuits.\n\nBy addressing the fundamental challenge of creating high-quality interconnects in increasingly smaller chip geometries, this technology aims to enhance the speed, power efficiency, and longevity of electronic devices. It represents a significant step forward in material science and process engineering for the semiconductor industry, enabling the continued scaling of microchips beyond current limitations. This semiconductor structure and fabrication method thereof is critical for the next generation of high-performance electronics.","question":"What is Semiconductor Structure and Fabrication Method Thereof?"},{"answer":"The **Semiconductor Structure and Fabrication Method Thereof** works by meticulously controlling the deposition of metal within the tiny openings (vias or trenches) of a semiconductor device. The process involves several key steps and layers:\n\nFirst, an opening is formed in a dielectric (insulating) layer on a semiconductor substrate. Then, a **diffusion barrier layer** is conformally deposited, lining the entire opening. This layer, typically made of materials like TaN or Ru, prevents the main conductive metal (usually copper) from migrating into the dielectric, which would cause electrical shorts.\n\nNext, a **nucleation metal layer** is conformally applied over the barrier. This layer acts as a seed, providing a uniform surface for the subsequent bulk metal deposition and ensuring good adhesion. The most innovative aspect is the introduction of a **film-growth retarding layer** placed precisely between the nucleation metal layer and the final bulk metal layer.\n\nThis retarding layer is engineered to modify the kinetics of the bulk metal deposition, typically an electrochemical plating process. It promotes 'bottom-up' filling, meaning the metal grows preferentially from the bottom of the opening upwards. This prevents the metal from prematurely closing off the top of the opening and trapping voids inside. By ensuring a complete, void-free fill, this semiconductor structure and fabrication method thereof significantly improves the quality and reliability of the internal wiring in microchips. The precise interaction of this retarding layer with plating additives during deposition is key to its effectiveness.","question":"How does Semiconductor Structure and Fabrication Method Thereof work?"},{"answer":"The **Semiconductor Structure and Fabrication Method Thereof** patent primarily solves the critical problem of **void formation and reliability issues in advanced semiconductor interconnects**. As integrated circuits (ICs) continue to miniaturize, the metallic pathways (vias and trenches) that connect transistors become extremely small and have very high aspect ratios (deep and narrow).\n\nTraditional metal deposition methods often struggle to fill these intricate geometries completely. They tend to deposit metal faster on the upper corners of the opening, leading to premature 'pinch-off' and the entrapment of microscopic air bubbles or 'voids' inside the metal lines. These voids are highly detrimental because they:\n\n1.  **Increase Electrical Resistance:** Voids disrupt the smooth flow of electricity, leading to higher resistance and slower signal propagation.\n2.  **Degrade Reliability:** They act as nucleation sites for electromigration (EM), a major failure mechanism where metal atoms migrate under current, causing open circuits and device failure over time.\n3.  **Reduce Manufacturing Yields:** Chips with voided interconnects are often defective and must be discarded, leading to significant manufacturing waste and increased costs.\n\nBy ensuring a void-free, bottom-up metal fill, the Semiconductor Structure and Fabrication Method Thereof directly addresses these limitations, which are crucial for the continued scaling of microelectronic devices and for enhancing the performance and longevity of all modern electronics. This innovation is vital for overcoming a persistent bottleneck in advanced chip fabrication.","question":"What problem does Semiconductor Structure and Fabrication Method Thereof solve?"},{"answer":"The patent for **Semiconductor Structure and Fabrication Method Thereof** (US-9853123) lists no specific inventors or assignees in the provided data. In patent filings, the 'Inventors' are the individuals who conceived the invention, and the 'Assignee' is typically the company or entity to whom the inventors have assigned their rights to the patent. Often, in large corporations, inventions are developed by a team of engineers and scientists, and the patent is assigned to the company for commercialization.\n\nWithout this information, it's not possible to identify the specific individuals or organizations directly responsible for creating this innovative semiconductor structure and fabrication method thereof. However, the existence of the patent signifies a significant contribution to the field of advanced semiconductor manufacturing, likely originating from a research and development effort focused on improving interconnect reliability and performance in microchips. The technical details suggest a deep understanding of material science, surface chemistry, and advanced deposition techniques, indicating a high level of expertise from the unlisted inventors.","question":"Who invented Semiconductor Structure and Fabrication Method Thereof?"},{"answer":"The **Semiconductor Structure and Fabrication Method Thereof** (US-9853123) offers several critical benefits that directly impact the performance, reliability, and manufacturing efficiency of advanced microchips:\n\n1.  **Void-Free Interconnects:** The most significant benefit is the elimination of microscopic voids within the metallic pathways. This ensures continuous, high-quality electrical connections, which are crucial for optimal chip function.\n2.  **Enhanced Reliability and Longevity:** By removing voids, the technology dramatically improves resistance to electromigration (EM), a major cause of chip failure. This leads to longer-lasting devices, reduced warranty claims, and greater customer satisfaction. This improved reliability is paramount for mission-critical applications.\n3.  **Superior Electrical Performance:** Void-free interconnects have lower electrical resistance, allowing signals to travel faster and with less power loss. This translates to faster processors, more energy-efficient devices, and improved overall system performance.\n4.  **Higher Manufacturing Yields:** The reduction in interconnect-related defects means that more functional chips can be produced from each silicon wafer. This directly leads to lower manufacturing costs, reduced waste, and increased profitability for semiconductor companies. This efficiency is a major competitive advantage.\n5.  **Enabling Advanced Scaling:** This innovation provides a robust solution for fabricating reliable interconnects in the extremely small geometries of next-generation (e.g., 5nm, 3nm) process nodes. It removes a key physical bottleneck, allowing for continued miniaturization and increased transistor density. These benefits make the semiconductor structure and fabrication method thereof a cornerstone for future technological advancements.","question":"What are the key benefits of Semiconductor Structure and Fabrication Method Thereof?"},{"answer":"The **Semiconductor Structure and Fabrication Method Thereof** (US-9853123) distinguishes itself from prior art metallization techniques primarily through the introduction and strategic placement of a **film-growth retarding layer** and its emphasis on highly conformal layering.\n\nIn conventional prior art methods:\n\n1.  **Seed Layer Limitations:** Often, a copper seed layer deposited by physical vapor deposition (PVD) would have poor conformality in high-aspect-ratio features, resulting in thin or discontinuous coverage. This created an imperfect base for subsequent bulk metal filling.\n2.  **Void Formation:** Without precise control over growth kinetics, the bulk metal (typically copper) deposited via electrochemical deposition (ECD) would grow faster from the top corners of the opening, leading to premature 'pinch-off' and the trapping of voids inside the interconnects. This was a persistent and costly problem.\n\nIn contrast, the Semiconductor Structure and Fabrication Method Thereof:\n\n1.  **Superior Conformal Layers:** It ensures highly conformal deposition for both the diffusion barrier and the nucleation metal layer, often using advanced techniques like Atomic Layer Deposition (ALD). This provides a robust and uniform foundation.\n2.  **Active Growth Control:** The key difference is the innovative film-growth retarding layer, placed between the nucleation and bulk metal layers. This ultrathin layer actively modifies the surface chemistry and growth kinetics during bulk metal deposition. It selectively suppresses metal growth on the sidewalls and top while encouraging growth from the bottom.\n3.  **Guaranteed Void-Free Filling:** This active control ensures a 'bottom-up' filling mechanism, completely preventing pinch-off and the formation of voids, even in the most challenging geometries. This is a fundamental improvement over prior art, which often had to contend with varying degrees of voiding. This unique approach of the semiconductor structure and fabrication method thereof significantly enhances reliability, performance, and manufacturing yields, overcoming the inherent limitations of previous techniques.","question":"How is Semiconductor Structure and Fabrication Method Thereof different from prior art?"},{"answer":"The **Semiconductor Structure and Fabrication Method Thereof** (US-9853123) has the potential to impact a wide array of industries that rely heavily on advanced electronic components and integrated circuits. Its core benefits of enhanced reliability, improved performance, and higher manufacturing yields are foundational to modern technology.\n\nKey impacted industries include:\n\n1.  **High-Performance Computing (HPC) & Data Centers:** Faster, more reliable processors and memory chips will boost the efficiency of supercomputers, cloud infrastructure, and enterprise servers, critical for big data analytics, scientific research, and complex simulations.\n2.  **Artificial Intelligence (AI) & Machine Learning:** AI accelerators and specialized chips demand extreme performance and reliability. This technology will enable more powerful and robust hardware for AI training and inference, from edge devices to large-scale data centers.\n3.  **Consumer Electronics:** Smartphones, laptops, tablets, gaming consoles, and wearables will benefit from more reliable components, leading to longer product lifespans, faster operation, and potentially smaller form factors.\n4.  **Automotive Electronics:** The increasing complexity of advanced driver-assistance systems (ADAS) and autonomous vehicles requires exceptionally reliable and high-performance chips. This patent helps ensure the integrity of critical safety and control systems.\n5.  **Internet of Things (IoT):** Smaller, more energy-efficient, and highly reliable chips are essential for the vast network of connected devices. This technology will support the growth of smart homes, industrial IoT, and various embedded systems.\n6.  **Aerospace & Defense:** Components in these sectors require the highest levels of reliability under extreme conditions. Improved interconnects directly contribute to the robustness of aerospace and defense electronics.\n\nIn essence, any industry driven by technological advancement and dependent on the continuous improvement of microelectronic devices will feel the positive ripple effect of this innovative semiconductor structure and fabrication method thereof.","question":"What industries will Semiconductor Structure and Fabrication Method Thereof impact?"},{"answer":"The patent for **Semiconductor Structure and Fabrication Method Thereof** (US-9853123) has specific dates associated with its lifecycle:\n\n*   **Filing Date:** The patent application was filed on **2015-10-28**. This is the date when the inventors or their assignee submitted the application to the patent office, officially marking the start of the patent prosecution process and establishing the priority date for the invention.\n*   **Publication Date:** The patent was published on **2017-12-26**. This is typically when the patent office makes the details of the granted patent publicly available. For US patents, the publication date often coincides with the grant date, meaning the patent officially became enforceable on this date.\n\nThese dates are important for understanding the timeline of the invention, its protection period, and when the technology became part of the public domain of patent literature. The period between filing and publication allows for examination by the patent office. The publication of the Semiconductor Structure and Fabrication Method Thereof patent signifies that the claims for this innovative semiconductor structure and fabrication method thereof have been reviewed and deemed novel, non-obvious, and useful by the patent office, thus granting the patent holder exclusive rights to the invention for a set period.","question":"When was Semiconductor Structure and Fabrication Method Thereof filed/granted?"},{"answer":"The commercial applications of the **Semiconductor Structure and Fabrication Method Thereof** (US-9853123) are extensive, spanning across various sectors that demand high-performance and reliable microelectronic components. This innovation provides a fundamental improvement in chip manufacturing, making it valuable for a wide range of products.\n\nPrimary commercial applications include:\n\n1.  **Manufacturing Advanced Microprocessors (CPUs/GPUs):** Chip foundries and integrated device manufacturers can use this method to produce next-generation processors for servers, personal computers, and gaming consoles, offering higher clock speeds and improved stability due to void-free interconnects.\n2.  **High-Density Memory Production (DRAM/NAND):** Memory manufacturers can leverage the enhanced reliability for high-density memory modules, reducing data corruption risks and extending product lifespans, crucial for data centers and high-end consumer devices.\n3.  **Specialized AI Accelerators:** For dedicated AI hardware, which requires massive parallel processing and high data throughput, this technology ensures the integrity of complex interconnections, enabling more powerful and efficient AI systems.\n4.  **Compact and Reliable IoT Devices:** The ability to create robust interconnects in very small form factors makes this ideal for miniature IoT sensors, wearables, and embedded systems that need to operate reliably in diverse environments with minimal power.\n5.  **Automotive and Industrial Control Systems:** In applications where failure is not an option, such as autonomous driving systems, engine control units, and industrial automation, this patent provides a pathway to more dependable and durable electronic components.\n6.  **Advanced Packaging Solutions:** As chip packaging evolves towards 3D integration and heterogeneous integration, the precise control over metallization offered by this semiconductor structure and fabrication method thereof will be critical for forming reliable vertical and horizontal connections between stacked chips.\n\nBy enabling the production of more reliable, higher-performing, and cost-effective chips, this patent directly supports the commercial viability and technological advancement of countless electronic products and systems globally.","question":"What are the commercial applications of Semiconductor Structure and Fabrication Method Thereof?"},{"answer":"The **Semiconductor Structure and Fabrication Method Thereof** (US-9853123) lays a robust foundation for future developments in microelectronics, and its principles are likely to evolve in several directions:\n\n1.  **Optimization of Retarding Layer Materials:** Further research will likely focus on discovering and optimizing new materials for the film-growth retarding layer. This could involve exploring novel alloys, compounds, or even organic films that offer even finer control over metal growth kinetics, potentially leading to faster deposition rates or applicability to a wider range of bulk metals.\n2.  **Integration with Advanced Deposition Techniques:** While the patent is compatible with existing ECD, future developments might see its integration with more advanced or alternative deposition methods, such as area-selective atomic layer deposition (AS-ALD) or advanced selective CVD, to achieve even greater precision and efficiency in patterning and filling.\n3.  **Application to Alternative Interconnect Materials:** As copper faces scaling limits in extremely narrow lines, alternative metals like ruthenium (Ru) or cobalt (Co) are being explored. The principles of precisely controlled bottom-up filling, as demonstrated by this patent, could be adapted and refined for these new materials, ensuring their reliable integration into future interconnect architectures.\n4.  **Enabling 3D ICs and Heterogeneous Integration:** The ability to form void-free interconnects is crucial for the advancement of 3D integrated circuits (3D ICs) and heterogeneous integration, where multiple chiplets are stacked or integrated side-by-side. Future developments will likely focus on adapting this method for through-silicon vias (TSVs) and other vertical interconnects, which are essential for these advanced packaging technologies.\n5.  **Enhanced Reliability Characterization:** As the technology matures, there will be ongoing efforts to develop even more sophisticated methods for characterizing the long-term reliability of these advanced interconnects under various stress conditions, including thermal cycling, mechanical stress, and high current densities. This will further validate and refine the semiconductor structure and fabrication method thereof, ensuring its continued leadership in chip manufacturing.","question":"What are the future developments expected for Semiconductor Structure and Fabrication Method Thereof?"}],"topics":["semiconductor structure","fabrication method","chip interconnects","metallization","diffusion barrier","technical","semiconductor","structure"],"tech_cluster":null},"seo":{"title":"Semiconductor Structure and Fabrication Method Thereof - Patent US-9853123","description":"Discover the Semiconductor Structure and Fabrication Method Thereof patent, revolutionizing chip interconnects with void-free metal filling for enhanced reliability and performance.","keywords":["semiconductor structure","fabrication method","chip interconnects","metallization","diffusion barrier","nucleation layer","film-growth retarding layer","void-free filling","semiconductor reliability","IC manufacturing","H01L patent","US-9853123","advanced packaging","electromigration","chip performance"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853123","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853123","citation_suggestion":"Patentable. \"Semiconductor structure and fabrication method thereof\" (US-9853123). https://patentable.app/patents/US-9853123","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853123","json":"https://patentable.app/api/llm-context/US-9853123","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:27:31.498Z"}