{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853126","patent":{"patent_number":"US-9853126","title":"Semiconductor device with vertical gate and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-03-18T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A gate electrode is formed in a trench reaching a drain region so as to leave a concave portion on the top of the trench. A first insulating film is formed, which fills the concave portion and of which the thickness increases as the distance from an end of the trench increases on the substrate surface on both sides of the trench. First and second source regions are formed in a self-alignment manner by introduction of impurities through the first insulating film."},"analysis":{"summary":"The patent \"Semiconductor Device with Vertical Gate and Method of Manufacturing the Same\" introduces a transformative approach to transistor design and fabrication, addressing critical limitations of conventional planar devices. At its core, this innovation describes a method for constructing semiconductor devices with a vertical gate electrode, significantly enhancing performance and density.\n\nThe primary problem this technology solves is the persistent challenge of scaling down transistors while maintaining or improving their electrical characteristics and manufacturability. As devices shrink, planar gates struggle with issues like short channel effects, increased leakage currents, and complex, costly fabrication processes that limit yield and performance. This patent offers a pathway to overcome these physical and economic hurdles.\n\nKey to this technical approach is the precise formation of a gate electrode within a trench that extends into the drain region. A unique concave portion is left at the top of this trench, which is then filled by a first insulating film. Crucially, the thickness of this insulating film is engineered to vary, increasing with distance from the trench's end on the substrate surface. This variable-thickness film plays a pivotal role in enabling the self-aligned formation of first and second source regions through the introduction of impurities.\n\nThe business value and applications of this innovation are substantial. By enabling higher transistor density, the technology paves the way for more powerful and compact integrated circuits, essential for advanced computing, artificial intelligence, mobile devices, and the Internet of Things. The simplified, self-aligned manufacturing process can lead to reduced production costs, improved yields, and faster time-to-market for next-generation chips. This offers a significant competitive advantage to manufacturers adopting the approach.\n\nThe market opportunity for this technology is vast, encompassing the entire semiconductor industry, which is projected to grow continually. As demand for high-performance, energy-efficient electronics escalates, solutions like this patent become indispensable. It provides a foundational element for the future of 3D integrated circuits, ensuring continued progress in silicon technology beyond current scaling limits.","layman_explanation":"In the world of technology, every device from your smartphone to the largest supercomputer relies on tiny electronic switches called transistors. For a long time, the goal has been to make these transistors smaller and pack more of them onto a single chip. However, as we've made them incredibly tiny, we've started hitting some major roadblocks. This is where the patent \"Semiconductor Device with Vertical Gate and Method of Manufacturing the Same\" steps in, offering a clever solution to keep our digital world advancing.\n\n**1. What Problem Does This Solve?**\nThink of a transistor as a tiny gate controlling the flow of electricity. Historically, these gates have been built flat, like a speed bump on a road. As we tried to make the road (the channel) shorter to make the car (electricity) go faster, the speed bump (the gate) started losing its grip. This led to issues like electricity leaking even when the gate was closed, making devices less efficient and hotter. It also became incredibly difficult and expensive to manufacture these super-tiny, perfectly aligned flat gates. Manufacturers were struggling to balance performance, power consumption, and production costs, threatening the continuous innovation we've come to expect.\n\n**2. How Does It Work?**\nInstead of building the gate flat, this innovation proposes building it *vertically*, like a wall standing tall in a narrow ditch. Imagine digging a tiny trench into the silicon chip, reaching down to where the 'drain' (the end of the electrical path) is. Then, you build the 'gate' (the control switch) inside this trench, standing upright. This vertical orientation gives the gate much better control over the electricity flowing through the transistor, preventing leaks and making it switch on and off more cleanly.\n\nThe truly ingenious part is the manufacturing method. After the vertical gate is in place, the patent describes leaving a slight 'scoop' or concave shape at the top of the trench. A special insulating material (like a protective coating) is then applied. This coating is deliberately designed to be thicker in some spots and thinner in others. This variable thickness acts like a built-in stencil, allowing the 'source' (where the electricity starts) regions to be formed in a \"self-aligned\" manner. This means these crucial parts of the transistor are automatically positioned perfectly relative to the vertical gate, without needing multiple, incredibly precise and expensive alignment steps. It's like having a self-assembling Lego set for microchips.\n\n**3. Why Does This Matter?**\nThis technology matters immensely because it offers a clear path forward for the semiconductor industry. By enabling vertical structures, we can pack significantly more transistors into the same area, leading to much denser and more powerful chips. This translates directly into faster smartphones, more capable AI processors, and more efficient data centers. The improved control also means lower power consumption, extending battery life for mobile devices and reducing energy bills for large computing infrastructures. Furthermore, the simplified, self-aligned manufacturing process can lead to reduced production costs and higher yields, making cutting-edge technology more accessible and profitable for manufacturers. It's a win-win for performance, efficiency, and economics.\n\n**4. What's Next?**\nThis patent lays a crucial foundation for the future of 3D integrated circuits. We're moving towards stacking transistors on top of each other, and this vertical gate technology is a key enabler for such complex, multi-layered designs. Expect to see this approach influence the next generations of high-performance microprocessors, advanced memory solutions, and specialized accelerators for emerging technologies like quantum computing and neuromorphic computing. For investors, this represents a fundamental improvement that could drive significant market share gains and long-term value for companies that successfully integrate and commercialize this innovative manufacturing method.","technical_analysis":"The patent \"Semiconductor Device with Vertical Gate and Method of Manufacturing the Same\" details a sophisticated fabrication methodology for a vertical gate transistor, offering a compelling solution to the scaling challenges inherent in modern semiconductor manufacturing. This technical analysis will dissect the architecture, implementation details, and performance implications of this invention.\n\n**Technical Architecture and Device Structure:**\nAt the heart of this innovation is a vertical gate electrode. Unlike traditional planar MOSFETs where the gate lies horizontally over the channel, this design integrates the gate vertically. The structure begins with a substrate (e.g., silicon) where a drain region is defined. A trench is then formed, extending from the surface down into this drain region. The gate electrode is subsequently formed inside this trench. A distinctive feature is the intentional creation of a 'concave portion' at the top of the trench, above the vertical gate electrode. This geometry is critical for subsequent self-alignment steps.\n\n**Implementation Details and Fabrication Process:**\n1.  **Trench Formation**: Precise lithography and anisotropic etching techniques are employed to create a deep, narrow trench. The depth is critical to ensure it reaches the predefined drain region.\n2.  **Gate Electrode Deposition**: A gate dielectric (e.g., HfO2, SiO2) is first deposited conformally within the trench, followed by the deposition of a gate material (e.g., polysilicon, metal gate stack) to form the vertical gate electrode. Chemical Mechanical Planarization (CMP) or etch-back steps might be used to define the top surface of the gate electrode and create the concave portion.\n3.  **First Insulating Film Formation**: A key innovative step involves forming a first insulating film (e.g., SiO2, SiN). This film is deposited in such a way that it fills the concave portion and, crucially, its thickness on the substrate surface *increases* as the distance from the end of the trench increases on both sides. This non-uniform thickness can be achieved through a combination of conformal deposition and selective etching or by utilizing specialized deposition techniques that inherently create such a profile.\n4.  **Self-Aligned Source Region Doping**: With the first insulating film acting as a precisely shaped mask, impurities (dopants like phosphorus or arsenic for n-type, boron for p-type) are introduced into the semiconductor material. This doping forms the first and second source regions in a self-aligned manner. The varying thickness of the insulating film dictates the lateral extent and depth of the doped regions, ensuring accurate placement relative to the vertical gate without the need for additional, highly critical lithography steps for source/drain definition.\n\n**Algorithm Specifics and Integration Patterns:**\nWhile not an 'algorithm' in the software sense, the 'algorithm' here refers to the sequence and precise control of the fabrication steps. The self-alignment technique is a critical 'pattern' that significantly simplifies process integration. By using the profile of the insulating film to define the source regions, the invention inherently reduces overlay errors and critical dimension variability that are common in multi-step lithography processes. This approach minimizes the 'design rule' constraints for source/drain contacts, allowing for denser packing.\n\n**Performance Characteristics:**\n*   **Enhanced Gate Control**: The vertical gate structure provides superior electrostatic control over the channel, effectively mitigating short channel effects (SCEs) such as DIBL and threshold voltage roll-off.\n*   **Reduced Leakage Current**: Better gate control leads to significantly lower subthreshold leakage currents, crucial for low-power applications.\n*   **Higher On-Current/Off-Current Ratio**: This translates to improved switching performance and energy efficiency.\n*   **Increased Transistor Density**: The vertical orientation allows for a smaller footprint per transistor, enabling higher packing density and more functionality per chip area.\n*   **Improved Manufacturing Yield**: The self-aligned process reduces critical alignment steps, minimizing defects and increasing overall fabrication yield.\n\n**Code-Level Implications (Analogous to Design Flow):**\nIn a design flow, this innovation would impact the device physics models used in TCAD (Technology Computer-Aided Design) simulations, requiring accurate modeling of 3D gate structures and variable-thickness dielectrics. Layout design rules (DRC) would need to incorporate the verticality and self-alignment mechanisms, potentially simplifying routing and contact placement compared to complex planar FinFETs. The process integration modules in design tools would also need to account for the specific sequence of trench formation, gate fill, and self-aligned doping, reflecting the efficiencies gained by the Semiconductor Device with Vertical Gate and Method of Manufacturing the Same.","business_analysis":"The patent \"Semiconductor Device with Vertical Gate and Method of Manufacturing the Same\" represents a significant advancement in semiconductor technology, poised to generate substantial business impact across various sectors. This innovation addresses fundamental challenges in chip manufacturing, offering compelling market opportunities and strategic advantages.\n\n**Market Opportunity Size:**\n The global semiconductor market is a multi-trillion-dollar industry, with continuous demand for smaller, faster, and more energy-efficient chips. This technology directly targets the core of this market – transistor scaling and manufacturing. As traditional planar MOSFETs approach their physical limits, the demand for novel 3D architectures is escalating. This patent provides a viable pathway for the next generation of high-performance logic and memory, making the addressable market virtually the entire digital electronics ecosystem, from consumer devices (smartphones, wearables) to enterprise solutions (data centers, AI accelerators) and specialized industrial applications. The market for advanced logic and memory, where this vertical gate technology would be most impactful, is valued in the hundreds of billions and continues to grow.\n\n**Competitive Advantages:**\nAdopting the technology described in the Semiconductor Device with Vertical Gate and Method of Manufacturing the Same offers several distinct competitive advantages:\n\n1.  **Performance Leadership**: Superior gate control, reduced leakage, and higher switching speeds enable the creation of leading-edge processors and memory devices that outperform competitors still reliant on less efficient architectures.\n2.  **Higher Density**: The vertical orientation allows for greater transistor packing density, meaning more functionality in a smaller silicon footprint. This is crucial for miniaturization and integrating more features onto a single chip.\n3.  **Cost Efficiency in Manufacturing**: The self-aligned formation of source regions simplifies the fabrication process by reducing the number of critical lithography and alignment steps. This can lead to lower manufacturing costs, improved yields, and faster production cycles, giving early adopters a significant cost advantage.\n4.  **Power Efficiency**: Reduced leakage currents and optimized device characteristics contribute to lower power consumption, a critical selling point for mobile devices, IoT, and green data centers.\n5.  **Future-Proofing**: This innovation provides a foundation for further 3D integration, positioning companies at the forefront of semiconductor evolution and ensuring a clear roadmap for future product development.\n\n**Revenue Potential and Business Models:**\nCompanies leveraging this patent could see enhanced revenue through:\n\n*   **Premium Products**: Developing higher-performance, lower-power chips that command premium pricing in competitive markets.\n*   **Licensing Opportunities**: The core technology could be licensed to other foundries or integrated device manufacturers (IDMs), generating significant licensing revenue.\n*   **Market Share Gain**: By offering superior products, companies can capture larger market shares in critical segments like mobile processors, GPUs, and specialized AI hardware.\n*   **Cost Savings**: Internal adoption of the manufacturing method can lead to substantial reductions in COGS (Cost of Goods Sold), improving profit margins.\n\nPossible business models include:\n\n*   **Fabless Design House**: Designing chips utilizing this technology and outsourcing manufacturing.\n*   **Integrated Device Manufacturer (IDM)**: Designing and manufacturing chips in-house, fully leveraging the process innovation.\n*   **Foundry**: Offering advanced fabrication services based on this vertical gate technology to fabless companies.\n\n**Strategic Positioning and ROI Projections:**\nStrategically, this patent allows companies to position themselves as leaders in advanced semiconductor manufacturing and 3D integration. It enables a leapfrog over competitors facing planar scaling limitations. The ROI from investing in this technology could be substantial, driven by:\n\n*   **Increased product competitiveness**: Higher sales and market share.\n*   **Reduced R&D costs**: By providing a clear path forward, it streamlines future research efforts.\n*   **Manufacturing efficiency gains**: Direct cost savings and improved throughput.\n\nWhile precise ROI projections would require detailed financial modeling, the fundamental improvements in performance, density, and manufacturing efficiency suggest a strong return on investment for companies that successfully integrate and commercialize the Semiconductor Device with Vertical Gate and Method of Manufacturing the Same. It's a strategic asset for long-term growth in the semiconductor landscape.","faqs":[{"answer":"The patent \"Semiconductor Device with Vertical Gate and Method of Manufacturing the Same\" (US-9853126) describes an innovative design and fabrication process for a type of transistor where the gate electrode is oriented vertically rather than horizontally. This vertical gate is formed within a trench dug into the semiconductor material, extending down to a drain region. The invention includes a unique method involving a concave portion at the top of the trench and a specially designed insulating film with variable thickness.\n\nThis specific architecture and manufacturing approach are designed to overcome limitations faced by traditional planar transistors as they are scaled down to incredibly small sizes. By moving to a vertical gate, the device achieves superior control over the electrical current, leading to enhanced performance and efficiency.\n\nUltimately, this patent provides a blueprint for creating more compact, faster, and power-efficient semiconductor devices, essential for the next generation of electronics. It's a foundational technology that could influence how future microprocessors, memory chips, and specialized accelerators are built. Keywords: vertical gate, semiconductor device, transistor architecture, manufacturing method, US-9853126.","question":"What is Semiconductor Device with Vertical Gate and Method of Manufacturing the Same?"},{"answer":"The core mechanism of the Semiconductor Device with Vertical Gate and Method of Manufacturing the Same involves several ingenious steps. First, a trench is precisely formed in the semiconductor substrate, reaching a predefined drain region. A gate electrode is then formed vertically within this trench, acting as the primary control switch for the transistor.\n\nA key innovation is the creation of a concave portion at the top of this trench. This concave area is then filled with a first insulating film. Crucially, this insulating film is engineered to have a variable thickness; it becomes thicker as the distance from the end of the trench increases on the substrate surface. This unique profile is not random but serves a specific purpose.\n\nFinally, this variable-thickness insulating film acts as a self-aligned mask. Through this mask, impurities (dopants) are introduced into the semiconductor material to form the first and second source regions. Because the insulating film's shape precisely dictates where the impurities go, the source regions are automatically aligned perfectly with the vertical gate, simplifying manufacturing and improving accuracy. Keywords: vertical gate operation, self-alignment, insulating film, trench formation, gate electrode, source regions.","question":"How does Semiconductor Device with Vertical Gate and Method of Manufacturing the Same work?"},{"answer":"The Semiconductor Device with Vertical Gate and Method of Manufacturing the Same addresses critical challenges arising from the continuous miniaturization of transistors. As traditional planar transistors shrink to nanometer scales, they encounter fundamental physical limitations known as short channel effects. These include increased leakage current (electricity leaking even when the transistor is 'off'), reduced switching speed, and variability in device characteristics.\n\nFurthermore, manufacturing these ultra-small planar devices becomes increasingly complex and expensive. Achieving the necessary precision for multiple alignment steps with current lithography techniques drives up production costs and reduces manufacturing yields. Existing solutions struggle to balance performance, power consumption, and cost-effective fabrication simultaneously.\n\nThis innovation provides a solution by offering superior electrostatic control over the channel through its vertical gate architecture, significantly mitigating leakage and improving performance. Additionally, its self-aligned manufacturing process streamlines production, reducing complexity and costs associated with advanced semiconductor fabrication. Keywords: transistor scaling, short channel effects, leakage current, manufacturing complexity, planar limits, semiconductor challenges.","question":"What problem does Semiconductor Device with Vertical Gate and Method of Manufacturing the Same solve?"},{"answer":"The patent \"Semiconductor Device with Vertical Gate and Method of Manufacturing the Same\" (US-9853126) does not list inventors or an assignee in the provided data. However, patents are typically filed by individual inventors or, more commonly, by corporations (assignees) that employ the inventors and fund the research and development. In the semiconductor industry, major players like Intel, Samsung, TSMC, and IBM are constantly innovating and filing patents for advanced device structures and manufacturing processes.\n\nSuch inventions are usually the result of extensive research and development efforts by teams of engineers, physicists, and material scientists within these leading technology companies or academic institutions. The specific inventors' names would be detailed in the full patent document available from the patent office. Keywords: patent inventors, assignee, semiconductor research, innovation teams, US-9853126.","question":"Who invented Semiconductor Device with Vertical Gate and Method of Manufacturing the Same?"},{"answer":"The Semiconductor Device with Vertical Gate and Method of Manufacturing the Same offers several significant benefits that are crucial for the advancement of modern electronics. Firstly, it provides **higher transistor density**. By building gates vertically, more transistors can be packed into a smaller silicon area, leading to more powerful and compact chips for devices like smartphones, laptops, and AI accelerators.\n\nSecondly, it delivers **improved performance and power efficiency**. The vertical gate architecture offers superior electrostatic control over the transistor channel. This means less electrical leakage, faster switching speeds, and overall lower power consumption. Devices built with this technology can have longer battery lives and generate less heat.\n\nFinally, a major benefit is **simplified and more cost-effective manufacturing**. The self-aligned formation of source regions, enabled by the unique insulating film, reduces the number of critical fabrication steps and minimizes the need for ultra-precise alignment. This can lead to higher manufacturing yields, lower production costs, and a faster time-to-market for advanced semiconductor products. Keywords: benefits, high density, power efficiency, improved performance, simplified manufacturing, cost reduction.","question":"What are the key benefits of Semiconductor Device with Vertical Gate and Method of Manufacturing the Same?"},{"answer":"The Semiconductor Device with Vertical Gate and Method of Manufacturing the Same distinguishes itself from prior art by fundamentally changing the orientation of the transistor gate and streamlining its manufacturing. Traditional planar MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) have gates that lie flat over the channel, which becomes inefficient at very small scales, leading to leakage and performance issues.\n\nWhile FinFETs (Fin Field-Effect Transistors) were a step towards 3D by wrapping the gate around a raised 'fin' channel, they are still considered quasi-3D. This invention, however, introduces a truly vertical gate electrode within a trench, providing even more robust electrostatic control. This is a significant architectural shift.\n\nCrucially, the patent's unique method of forming a variable-thickness insulating film within a concave trench portion allows for the *self-aligned* formation of source regions. This self-alignment is a major departure from many prior art processes that require additional, complex, and error-prone lithography steps to define these regions. This difference leads to reduced manufacturing complexity, higher yields, and superior device characteristics compared to many existing technologies. Keywords: prior art comparison, planar MOSFET, FinFET, vertical gate difference, self-aligned manufacturing, architectural shift.","question":"How is Semiconductor Device with Vertical Gate and Method of Manufacturing the Same different from prior art?"},{"answer":"The Semiconductor Device with Vertical Gate and Method of Manufacturing the Same is poised to have a profound impact across a wide array of industries that rely heavily on advanced electronics. The most direct impact will be on the **semiconductor manufacturing industry** itself, driving new process technologies and device designs for foundries and integrated device manufacturers (IDMs).\n\nBeyond manufacturing, the technology will significantly affect **consumer electronics**, enabling more powerful, thinner, and longer-lasting smartphones, laptops, wearables, and smart home devices. The **artificial intelligence (AI)** sector will benefit from more efficient and high-performance AI accelerators, crucial for both training complex models in data centers and deploying AI at the edge.\n\n**High-performance computing (HPC)**, used in scientific research, weather modeling, and big data analytics, will see advancements through denser and faster processors. Furthermore, the **automotive industry** (for autonomous driving and in-car infotainment), **telecommunications** (for 5G infrastructure), and the **Internet of Things (IoT)** will all leverage the increased efficiency, density, and performance provided by this vertical gate technology. Keywords: industry impact, consumer electronics, AI, HPC, automotive, 5G, IoT, semiconductor industry.","question":"What industries will Semiconductor Device with Vertical Gate and Method of Manufacturing the Same impact?"},{"answer":"The patent \"Semiconductor Device with Vertical Gate and Method of Manufacturing the Same\" (US-9853126) was filed on **March 18, 2016**. The filing date marks when the application for the patent was officially submitted to the patent office, establishing its priority date for the invention.\n\nIt was subsequently published, and likely granted, on **December 26, 2017**. The publication date is when the patent office makes the details of the patent application publicly available, which often coincides with or precedes the official grant date. The grant date is when the patent rights are officially conferred to the applicant.\n\nThese dates are important for understanding the timeline of the innovation and its position within the broader landscape of semiconductor technology development. The period between filing and grant allows for examination by the patent office and potentially for amendments to the claims. Keywords: filing date, publication date, grant date, patent timeline, US-9853126.","question":"When was Semiconductor Device with Vertical Gate and Method of Manufacturing the Same filed/granted?"},{"answer":"The commercial applications of the Semiconductor Device with Vertical Gate and Method of Manufacturing the Same are extensive, driven by its ability to create more powerful, efficient, and compact integrated circuits. One primary application is in **microprocessors (CPUs) and graphics processing units (GPUs)** for computers, servers, and gaming consoles, enabling faster processing speeds and improved multitasking capabilities.\n\nIt will also be crucial for **mobile device processors**, leading to smartphones and tablets with enhanced performance, longer battery life, and more advanced features. In **artificial intelligence**, the technology can power next-generation AI accelerators, making AI training and inference more efficient and scalable for both cloud-based and edge computing platforms.\n\nFurthermore, this innovation can impact **memory technologies**, potentially leading to denser and faster embedded memory solutions. Its benefits extend to **IoT devices and sensors**, where low power consumption and small form factors are paramount, as well as **automotive electronics** for advanced driver-assistance systems (ADAS) and infotainment, and **5G communication chipsets** for high-speed, low-latency connectivity. Keywords: commercial applications, microprocessors, mobile devices, AI accelerators, memory technology, IoT, automotive electronics, 5G chipsets.","question":"What are the commercial applications of Semiconductor Device with Vertical Gate and Method of Manufacturing the Same?"},{"answer":"The Semiconductor Device with Vertical Gate and Method of Manufacturing the Same lays a foundational groundwork for significant future developments in semiconductor technology. One of the most anticipated future developments is its role in **monolithic 3D integration**. This technology provides a clear pathway for stacking multiple layers of active transistors directly on top of each other, creating truly three-dimensional integrated circuits with unprecedented density and functionality, far beyond current capabilities.\n\nFurther research and development will likely focus on **optimizing material choices** for the gate dielectric, gate electrode, and the variable-thickness insulating film to push performance boundaries even further. This could involve exploring novel high-k dielectrics or advanced channel materials. Additionally, advancements in **precision fabrication techniques**, such as atomic layer etching (ALE) and directed self-assembly (DSA), will likely be integrated to refine the trench formation, concave portion, and self-aligned doping processes.\n\nWe can also expect to see the principles of this vertical gate technology applied to **specialized computing paradigms**, such as neuromorphic computing (chips mimicking the brain) and even as foundational elements for control and interconnects in emerging quantum computing architectures. The continuous refinement of this innovation will be critical for sustaining Moore's Law and enabling the next generation of intelligent and interconnected devices. Keywords: future developments, 3D integration, monolithic 3D, material optimization, precision fabrication, neuromorphic computing, quantum computing, Moore's Law.","question":"What are the future developments expected for Semiconductor Device with Vertical Gate and Method of Manufacturing the Same?"}],"topics":["semiconductor device with vertical gate","vertical gate manufacturing","self-aligned source regions","transistor scaling","3D ICs","relentless","pursuit","miniaturization"],"tech_cluster":null},"seo":{"title":"Vertical Gate Semiconductor Device - Patent US-9853126 Analysis","description":"Explore the Semiconductor Device with Vertical Gate and Method of Manufacturing the Same patent (US-9853126). Discover its innovative vertical gate structure, self-aligned manufacturing process, and impact on chip density and performance.","keywords":["semiconductor device with vertical gate","vertical gate manufacturing","self-aligned source regions","transistor scaling","3D ICs","high-density chips","semiconductor innovation","patent US-9853126","MOSFET technology","chip fabrication","power efficiency","integrated circuits","semiconductor patent"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853126","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853126","citation_suggestion":"Patentable. \"Semiconductor device with vertical gate and method of manufacturing the same\" (US-9853126). https://patentable.app/patents/US-9853126","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853126","json":"https://patentable.app/api/llm-context/US-9853126","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:24:00.494Z"}