{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853129","patent":{"patent_number":"US-9853129","title":"Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growth","assignee":null,"inventors":[],"filing_date":"2016-08-19T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A finFET device includes an n-doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped source or drain extension is disposed. The n-doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer."},"analysis":{"summary":"The patent **Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth** introduces a groundbreaking method for enhancing the performance and scalability of FinFET (Fin Field-Effect Transistor) devices, which are critical components in modern microprocessors. The core innovation lies in the precise fabrication of an n-doped source and/or drain extension.\n\nThe primary problem this invention solves is the difficulty of forming optimal source/drain extensions in increasingly miniaturized FinFET structures. As transistors shrink, conventional line-of-sight fabrication techniques struggle to create uniformly doped and perfectly integrated extensions in the tight, three-dimensional geometry of FinFETs, particularly in regions shadowed by the gate spacer. This often leads to increased electrical resistance, higher leakage currents, and overall limitations in device performance and manufacturing yield.\n\nThis technology addresses these challenges by employing a selective epitaxial growth (SEG) process. Rather than direct deposition, the n-doped extension is formed within a specially engineered cavity located adjacent to the gate spacer and integrated with the bulk semiconductor substrate. This 'non-line-of-sight' approach allows for meticulous control over the material deposition and doping profile, ensuring a high-quality, low-resistance connection for electron flow. The SEG process ensures that the desired semiconductor material grows only on specific crystalline surfaces, providing exceptional precision.\n\nThe business value of this innovation is substantial. By enabling the creation of more efficient and reliable FinFETs, it directly contributes to the development of faster, lower-power, and denser integrated circuits. This translates into competitive advantages for semiconductor manufacturers, reduced production costs through improved yields, and the ability to meet the escalating demands for advanced computing in areas like artificial intelligence, cloud infrastructure, and next-generation mobile devices. The market opportunity resides in sustained transistor scaling and performance enhancement, crucial for the continued evolution of the digital economy.","layman_explanation":"### What Problem Does This Solve?\nImagine your computer chip as a bustling city, and its tiny transistors are the individual buildings. For electricity (like cars) to move efficiently between these buildings, you need perfectly designed on-ramps and off-ramps, known as 'source/drain extensions.' As these chips get smaller and smaller, these ramps become incredibly tiny and are often tucked away in hard-to-reach spots, like behind a support pillar (the 'gate spacer'). The existing construction methods are like trying to build a delicate, precise ramp in a cramped, dark corner with big, clumsy tools. This leads to ramps that aren't quite right—they might be bumpy, too narrow, or have hidden detours. The business problem? These imperfect ramps cause traffic jams for electricity, slowing down your devices, making them heat up more, and consuming too much power. This limits how small and powerful we can make the next generation of electronics, impacting everything from smartphone battery life to the speed of cloud computing.\n\n### How Does It Work?\nThe patent **Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth** introduces a clever new construction technique for these tiny ramps. Instead of trying to force material into a hidden spot, this innovation uses a process called 'Selective Epitaxial Growth' (SEG). Think of SEG like a highly specialized, microscopic 3D printer that only prints on specific surfaces and can grow materials with incredible precision. First, engineers create a tiny, perfectly shaped 'cavity' or mold in the hidden spot next to the support pillar (gate spacer). Then, using the SEG process, they precisely *grow* the n-doped semiconductor material directly into this cavity. This material is designed to act as the perfect 'on-ramp' or 'off-ramp' for electrons. Because it's grown selectively and within a pre-defined mold, it's perfectly smooth, perfectly sized, and perfectly connected, even though it's in a 'non-line-of-sight' location. This is like having a custom-built, perfectly engineered ramp that fits exactly where it needs to go, ensuring a super-fast, smooth flow of traffic.\n\n### Why Does This Matter?\nThis innovation matters because it directly addresses a fundamental roadblock in making electronics smaller, faster, and more energy-efficient. For businesses, this means:\n*   **Competitive Edge:** Companies adopting this technology can produce chips that outperform competitors in speed and power consumption, leading to higher market share in crucial sectors like AI, mobile, and cloud computing.\n*   **Cost Efficiency:** By creating more perfect components, manufacturing yields improve, reducing waste and overall production costs.\n*   **Future-Proofing:** It enables the continued shrinking of transistors, extending the lifespan of Moore's Law and allowing for the development of entirely new product categories and capabilities that rely on ultra-compact, powerful chips.\n*   **Investment Opportunity:** For investors, this represents a foundational technology that underpins the growth of the entire digital economy, offering significant ROI potential through licensing or direct product integration. It's about building the infrastructure for tomorrow's technology today.\n\n### What's Next?\nThis technology paves the way for the next generation of microprocessors, making devices even more powerful and energy-efficient. We can expect to see its impact in areas like real-time AI processing, advanced augmented reality devices, and even more efficient data centers. As this approach becomes more widely adopted, it will accelerate innovation across the tech industry, potentially shortening product development cycles and bringing advanced capabilities to market faster. It's a key piece of the puzzle for a future filled with smarter, faster, and more seamlessly integrated technology.","technical_analysis":"The patent **Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth** details a sophisticated fabrication method for n-type metal-oxide-semiconductor (NMOS) FinFETs, specifically targeting the optimization of source and drain (S/D) extensions. This technical analysis will delve into the underlying architecture, implementation specifics, and performance implications of this innovative approach.\n\n**Technical Architecture and Problem Statement:**\nModern FinFETs utilize a three-dimensional gate structure that wraps around a thin silicon fin, providing superior electrostatic control over the channel compared to planar transistors. However, as gate lengths shrink to nanometer scales, the parasitic resistance from the S/D regions, particularly the extensions under the gate spacer, becomes a dominant factor limiting device performance. Conventional S/D formation typically involves ion implantation followed by annealing, or *ex situ* epitaxial growth. These methods face inherent challenges in FinFET geometries:\n1.  **Ion Implantation Shadowing:** The tall fin and gate spacer can shadow parts of the S/D extension region, leading to non-uniform dopant profiles and high resistance in critical areas.\n2.  **Junction Formation:** Creating abrupt, shallow, and highly activated junctions with low leakage current is difficult in the complex 3D topography.\n3.  **Strain Engineering Integration:** For performance enhancement, S/D regions are often epitaxially grown with materials like SiC (for NMOS) to induce tensile strain in the channel. Integrating precise doping with strain engineering is complex.\n\nThe invention addresses these by introducing a novel architectural feature: an n-doped S/D extension that is **disposed between a gate spacer and a bulk semiconductor portion of the semiconductor substrate**. The key here is the 'non-line-of-sight' aspect of its formation.\n\n**Implementation Details and Algorithm Specifics (Process Flow):**\n1.  **Fin and Gate Stack Definition:** Standard FinFET processing steps are assumed, including fin patterning, gate dielectric deposition, metal gate formation, and self-aligned gate spacer deposition (e.g., SiN, SiO2). The gate spacer defines the effective gate length and the spacing for the S/D extensions.\n2.  **Cavity Formation:** After the gate spacer is formed, a critical dry etching process is used to create a precisely shaped **cavity** in the silicon substrate. This cavity is located immediately adjacent to the gate spacer and extends into the bulk silicon. The etching process must be highly anisotropic and selective to avoid damaging the gate stack or fin. This cavity essentially creates the 'non-line-of-sight' region where the extension will be formed.\n3.  **Selective Epitaxial Growth (SEG):** This is the core 'algorithm' for forming the extension. A chemical vapor deposition (CVD) technique, specifically SEG, is employed. During SEG, precursor gases (e.g., SiH4, SiCl2H2 for silicon; PH3, AsH3 for n-type dopants) are introduced into a reaction chamber. Crucially, growth is selective, meaning the silicon-containing species only deposit and grow epitaxially on exposed crystalline silicon surfaces (the bottom and sidewalls of the cavity), but not on amorphous dielectric surfaces (like the gate spacer or shallow trench isolation). Dopants are incorporated *in situ* during this growth, ensuring a uniform and highly activated n-type doping profile within the newly grown material.\n    *   **Growth Conditions:** Parameters like temperature, pressure, precursor flow rates, and dopant partial pressures are meticulously controlled to achieve desired growth rate, selectivity, crystal quality, and dopant concentration. For NMOS, n-type Si or SiC:P might be grown to induce tensile strain.\n4.  **Planarization and Contact Formation:** Following SEG, standard back-end-of-line (BEOL) processes are used, including chemical mechanical planarization (CMP) to level the surface, followed by the formation of silicide and metal contacts to the S/D regions.\n\n**Performance Characteristics and Code-Level Implications:**\nBy utilizing this precise SEG approach, the resulting FinFET exhibits several enhanced performance characteristics:\n*   **Reduced Series Resistance (Rs):** The uniformly n-doped, high-quality epitaxial extension formed directly in the cavity minimizes electron scattering and resistance in the S/D access regions, leading to higher drive currents (Ion) for a given gate overdrive.\n*   **Improved Short-Channel Control:** The optimal placement and doping profile of the extension help maintain excellent electrostatic control by the gate, reducing drain-induced barrier lowering (DIBL) and improving the subthreshold swing (SS).\n*   **Lower Leakage Current (Ioff):** Precise junction formation via SEG minimizes defects and unwanted dopant diffusion, leading to lower off-state leakage currents and improved power efficiency.\n*   **Enhanced Reliability:** The high crystal quality of the epitaxially grown material contributes to improved device reliability and reduced variability.\n\nFrom a design perspective, this technology allows circuit designers to push performance envelopes, enabling higher clock frequencies and lower power consumption in CPU, GPU, and specialized accelerator designs. For software and algorithm developers, this means faster execution times for computationally intensive tasks, potentially impacting the efficiency of AI/ML models, scientific simulations, and complex data processing. The robust and repeatable nature of the SEG process also implies better device matching, which is critical for analog and mixed-signal circuit design, and higher manufacturing yields, reducing overall chip costs. This innovation is a foundational step for future sub-5nm logic technologies.","business_analysis":"The patent **Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth** represents a significant leap in semiconductor fabrication, poised to unlock substantial market opportunities and provide a competitive edge in the fiercely contested microchip industry. This innovation directly addresses critical scaling challenges in FinFET technology, a cornerstone of modern computing, with profound business implications.\n\n**Market Opportunity Size:**\nThe global semiconductor market, particularly the logic and memory segments that heavily rely on FinFET technology, is projected to continue its robust growth, driven by AI, 5G, IoT, cloud computing, and advanced automotive applications. The ability to produce faster, more power-efficient, and smaller transistors is fundamental to this expansion. This patent's technology, by enabling superior FinFET performance, taps into a multi-billion dollar market for CPUs, GPUs, FPGAs, and ASICs. Any improvement that extends Moore's Law and enhances transistor characteristics at advanced nodes (7nm, 5nm, and beyond) commands premium value and broad adoption across the entire electronics supply chain.\n\n**Competitive Advantages:**\nCompanies that adopt or license this technology will gain several distinct competitive advantages:\n1.  **Performance Leadership:** The ability to produce FinFETs with lower series resistance, higher drive currents, and reduced leakage translates directly into faster processors and more energy-efficient chips. This performance edge is crucial in high-stakes markets like data centers, high-performance computing, and premium mobile devices.\n2.  **Manufacturing Yield Improvement:** The precise and controllable Selective Epitaxial Growth (SEG) process reduces variability and defects in critical S/D extension formation. Improved yields directly lower per-chip manufacturing costs, enhancing profitability and market competitiveness.\n3.  **Extended Scaling Roadmap:** This innovation provides a viable pathway for continued transistor scaling, allowing companies to develop and commercialize products at future technology nodes where traditional methods falter. This secures a long-term technology roadmap and market relevance.\n4.  **IP Licensing Potential:** For the patent holder, the technology presents significant licensing opportunities to major semiconductor foundries and integrated device manufacturers (IDMs), generating substantial royalty revenue.\n\n**Revenue Potential and Business Models:**\nRevenue generation could stem from several avenues:\n*   **Direct Product Enhancement:** For IDMs, integrating this technology into their chip designs leads to higher-performing products that can command higher prices and capture greater market share.\n*   **Foundry Service Differentiation:** Foundries offering this advanced fabrication capability can attract leading chip designers seeking cutting-edge performance and reliability.\n*   **IP Licensing:** The most direct revenue stream for the patent owner would be licensing the intellectual property to semiconductor giants, securing a share of the value created by improved chip performance and manufacturing efficiency.\n\n**Strategic Positioning:**\nThis patent allows for strategic positioning as a leader in advanced semiconductor process technology. It reinforces a company's commitment to pushing the boundaries of physics and engineering to meet future computing demands. By addressing a fundamental FinFET scaling challenge, it enhances strategic relevance in the global technology ecosystem, fostering partnerships and attracting top talent.\n\n**ROI Projections:**\nInvestment in developing or adopting this technology offers a high return on investment. The costs associated with R&D and implementation are likely offset by:\n*   **Increased Market Share:** Superior product performance drives customer adoption.\n*   **Higher Average Selling Prices (ASPs):** Premium performance often justifies premium pricing.\n*   **Reduced Manufacturing Costs:** Improved yields and reduced rework lower operational expenses.\n*   **Licensing Revenues:** A steady stream of income from IP licensing agreements.\n\nIn essence, Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth is not just a technical improvement; it's a strategic business enabler that promises to deliver significant financial and competitive returns by fueling the next generation of high-performance, energy-efficient electronics.","faqs":[{"answer":"Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth is a patented innovation (US-9853129) in semiconductor manufacturing. It describes a novel method for fabricating a crucial component of advanced transistors, specifically n-type metal-oxide-semiconductor (NMOS) FinFETs. The core of the invention lies in creating an n-doped source and/or drain extension within the FinFET structure.\n\nThis extension is vital for efficient electrical current flow within the transistor. What makes this patent unique is its 'non-line-of-sight' approach. Instead of traditional methods that struggle with the complex, three-dimensional geometry of modern FinFETs, this technology uses a precise technique to form the extension in a hidden cavity adjacent to the transistor's gate spacer. This ensures optimal placement and material quality, which are critical for enhancing the transistor's performance.\n\nEssentially, it's a breakthrough process that enables the creation of a key internal part of a FinFET in a way that overcomes the physical limitations of conventional manufacturing, leading to smaller, faster, and more energy-efficient computer chips. This innovation is fundamental to the continued scaling and improvement of microprocessors that power our electronic devices. Keywords: FinFET, N-doped source drain extension, selective epitaxial growth, semiconductor manufacturing, US-9853129.","question":"What is Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth?"},{"answer":"The mechanism of Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth involves a multi-step, highly precise fabrication process. First, the basic FinFET structure is built, including the gate and its adjacent gate spacer.\n\nThe key innovative step follows: a tiny, precisely shaped cavity is etched into the silicon substrate right next to the gate spacer. This cavity is strategically located in a 'non-line-of-sight' position, meaning it's in an area that's difficult for traditional doping methods (like ion implantation) to access directly and uniformly.\n\nOnce the cavity is formed, a technique called Selective Epitaxial Growth (SEG) is employed. During SEG, n-doped semiconductor material (e.g., silicon doped with phosphorus) is grown *only* within this cavity, and *only* on exposed crystalline silicon surfaces. This selective growth ensures that the extension is perfectly formed, with high material quality and a uniform n-type doping profile. This process overcomes the limitations of older methods by allowing for precise control over the extension's geometry and electrical properties in a confined space. Keywords: Selective Epitaxial Growth (SEG), FinFET fabrication, n-doped, cavity, gate spacer, process flow.","question":"How does Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth work?"},{"answer":"Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth solves the critical problem of precisely and effectively forming source and drain (S/D) extensions in advanced FinFET devices, especially as transistors continue to shrink. In modern nanoscale FinFETs, these extensions are crucial for efficient electron flow but are located in geometrically challenging areas, often shadowed by the gate spacer.\n\nPrior art fabrication methods, such as ion implantation, struggle with these intricate 3D structures. They often result in non-uniform doping, increased electrical resistance, higher leakage currents, and greater device variability. These issues significantly hinder the transistor's performance, power efficiency, and the overall manufacturing yield of the chips.\n\nThis invention provides a solution by enabling the formation of optimal S/D extensions in these difficult-to-reach 'non-line-of-sight' regions. By doing so, it mitigates parasitic resistance, reduces leakage, improves short-channel control, and ultimately allows for the continued scaling of FinFET technology, extending the viability of Moore's Law. Keywords: FinFET challenges, transistor scaling, source drain extension problems, semiconductor bottlenecks, performance limitations, leakage current, series resistance.","question":"What problem does Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth solve?"},{"answer":"The patent data provided indicates that the inventors of Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth are not specified in this particular dataset. Patent filings typically list inventors, and this information would usually be publicly available in the full patent document (US-9853129) from official patent databases like the USPTO or Google Patents.\n\nThese inventors are typically researchers and engineers working within semiconductor companies or research institutions who are at the forefront of microchip design and fabrication. Their work involves deep expertise in materials science, process engineering, and device physics to conceive and develop such intricate manufacturing techniques.\n\nWhile the specific names are not present here, the innovation itself reflects a collaborative effort within the semiconductor industry to continually push the boundaries of what's possible in integrated circuit technology. The filing date of 2016-08-19 and publication date of 2017-12-26 place this invention within a period of intense development for advanced FinFET nodes. Keywords: Inventors, patent US-9853129, semiconductor research, FinFET development, intellectual property, microchip engineers.","question":"Who invented Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth?"},{"answer":"The key benefits of Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth are numerous and impactful for the semiconductor industry and end-users alike.\n\nFirstly, it leads to **significantly improved transistor performance**. By forming highly conductive, uniformly doped source/drain extensions, the parasitic series resistance is drastically reduced. This results in higher drive currents, enabling faster switching speeds and more powerful microprocessors for all types of electronic devices.\n\nSecondly, the innovation contributes to **greater energy efficiency**. The precise control over junction formation minimizes off-state leakage currents, meaning less power is wasted as heat. This translates to longer battery life for mobile devices and lower operational costs for data centers. Thirdly, it **enhances manufacturing yield and reliability**. The repeatable and highly controlled Selective Epitaxial Growth (SEG) process reduces defects and device variability, leading to more consistent chip performance across a wafer and higher production success rates.\n\nFinally, this technology **enables continued transistor scaling**. By effectively solving a major challenge in FinFET fabrication at advanced nodes, it provides a viable pathway for further miniaturization, allowing the industry to pack more transistors into smaller areas and extend the capabilities of Moore's Law. Keywords: FinFET benefits, transistor performance, energy efficiency, manufacturing yield, device reliability, semiconductor scaling, high drive current.","question":"What are the key benefits of Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth?"},{"answer":"Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth distinguishes itself from prior art primarily through its 'non-line-of-sight' formation mechanism and the precise application of Selective Epitaxial Growth (SEG).\n\nPrior art methods, such as ion implantation, are fundamentally 'line-of-sight' processes. This means they struggle to uniformly dope regions that are geometrically shadowed or hidden by other structures, like the gate spacer in a FinFET. This often results in non-uniform doping, higher resistance, and compromised performance in these critical source/drain extension areas. Additionally, ion implantation can introduce crystal damage that requires high-temperature annealing, which can lead to unwanted dopant diffusion.\n\nIn contrast, this invention first creates a precisely etched cavity in the silicon substrate adjacent to the gate spacer. Then, it uses SEG to grow the n-doped semiconductor material *selectively* within this cavity. SEG only grows on crystalline silicon surfaces, not on insulating layers, providing unparalleled control over the material's placement and quality. Furthermore, dopants can be incorporated *in situ* during growth, ensuring uniform doping without the issues of post-implantation annealing. This combination allows for the formation of an ideal, low-resistance, and perfectly integrated extension in a location previously challenging to optimize, making it a superior solution for advanced FinFETs. Keywords: Prior art comparison, ion implantation, selective epitaxial growth (SEG) difference, non-line-of-sight, FinFET innovation, doping techniques, semiconductor fabrication evolution.","question":"How is Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth different from prior art?"},{"answer":"Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth will have a profound impact across numerous industries that rely on advanced semiconductor technology. Since FinFETs are the foundation of modern microprocessors, improvements in their fabrication translate directly into advancements in a vast array of electronic devices and systems.\n\n**Information Technology and Cloud Computing** will see significant benefits through faster, more energy-efficient CPUs and GPUs for servers, data centers, and cloud infrastructure. This enables more powerful AI computations, faster data processing, and reduced operational costs. **Consumer Electronics**, including smartphones, laptops, tablets, and gaming consoles, will experience enhanced performance, longer battery life, and the ability to integrate more complex features into smaller form factors. **Artificial Intelligence and Machine Learning** will be further accelerated by specialized AI chips that can perform computations more rapidly and efficiently, leading to breakthroughs in areas like natural language processing, computer vision, and autonomous decision-making.\n\n**Automotive Industry** will benefit from more powerful and reliable chips for advanced driver-assistance systems (ADAS), in-car infotainment, and the development of fully autonomous vehicles. **Internet of Things (IoT)** devices, from smart home gadgets to industrial sensors, will become even smaller, more powerful, and more energy-efficient, expanding the possibilities for pervasive computing. In essence, any industry that demands high-performance, low-power, and compact integrated circuits will be positively impacted by this foundational semiconductor innovation. Keywords: Industry impact, FinFET applications, AI, cloud computing, consumer electronics, automotive tech, IoT, semiconductor industry.","question":"What industries will Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth impact?"},{"answer":"The patent Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth, identified by the number US-9853129, has specific dates associated with its lifecycle in the patent office.\n\nAccording to the provided data, the **filing date** for this patent was **2016-08-19**. This is the date when the patent application was initially submitted to the patent office, marking the beginning of the examination process and establishing priority for the invention.\n\nThe **publication date** for this patent was **2017-12-26**. This is the date when the patent was officially published, making its details publicly accessible. In many patent systems, this date also signifies when the patent was granted, meaning the claims of the invention were found to be novel, non-obvious, and useful, thereby conferring exclusive rights to the patent holder for a specified period. These dates are crucial for understanding the patent's legal standing and its position within the timeline of semiconductor technological development. Keywords: Patent filing date, patent publication date, US-9853129, FinFET patent timeline, intellectual property dates, semiconductor innovation history.","question":"When was Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth filed/granted?"},{"answer":"The commercial applications of Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth are extensive, as this technology directly enhances the performance and efficiency of FinFETs, which are foundational to modern microprocessors. Any product or service relying on high-performance, low-power integrated circuits stands to benefit.\n\nPrimary applications include **high-performance computing (HPC)**, where advanced CPUs and GPUs for servers, data centers, and supercomputers will see significant speed and efficiency gains. This translates to more powerful cloud services, faster scientific simulations, and more capable enterprise IT infrastructure. In the **mobile and consumer electronics** sector, this innovation will lead to smartphones, tablets, and wearable devices with longer battery life, quicker app responsiveness, and the ability to support more sophisticated features like advanced augmented reality and high-resolution media processing.\n\nFurthermore, this technology is critical for the development of **Artificial Intelligence (AI) accelerators**, enabling faster training and inference for complex machine learning models across various industries, from autonomous driving to medical diagnostics. **Automotive electronics**, particularly for advanced driver-assistance systems (ADAS) and autonomous vehicles, will leverage these improved chips for real-time decision-making and enhanced safety features. The patent's ability to facilitate continued transistor scaling also supports emerging technologies like **edge computing** and **advanced IoT devices**, allowing for more powerful and compact processing at the network's periphery. Keywords: Commercial applications, FinFET commercialization, high-performance computing, mobile devices, AI accelerators, automotive electronics, IoT, semiconductor market.","question":"What are the commercial applications of Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth?"},{"answer":"Looking ahead, the principles and techniques embodied in Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth are expected to drive several future developments in semiconductor technology. This innovation provides a robust foundation for continued scaling and performance enhancement, opening doors for further research and application.\n\nOne major area of development will be its **integration with even more advanced transistor architectures**, such as Gate-All-Around (GAA) FETs and nanosheet FETs. These next-generation designs present even greater challenges for source/drain extension formation, and the precision of non-line-of-sight Selective Epitaxial Growth (SEG) will be crucial. We can also expect **refinements in SEG process chemistries and equipment**, leading to even higher material quality, more precise dopant placement, and greater manufacturing throughput. This could involve exploring novel precursor gases or advanced *in situ* monitoring and control systems.\n\nFurthermore, the understanding gained from this patent will likely influence **new approaches to strain engineering** within FinFETs and future transistor types. Optimizing the type and amount of strain induced in the channel region through epitaxially grown S/D materials is key to maximizing carrier mobility. Finally, the ability to precisely engineer materials in complex 3D nanoscale environments will accelerate the development of **specialized chips for emerging applications** like quantum computing, neuromorphic computing, and advanced sensor technologies, all of which demand unprecedented levels of material and device control. Keywords: Future developments, GAA FETs, nanosheet FETs, advanced transistor architectures, SEG process refinements, strain engineering, quantum computing, neuromorphic computing.","question":"What are the future developments expected for Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth?"}],"topics":["Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth","FinFET","N-doped source drain extension","selective epitaxial growth","SEG","relentless","pursuit","miniaturization"],"tech_cluster":null},"seo":{"title":"FinFET Source Drain Extension - N-doped SEG Patent US-9853129","description":"Discover Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth. This patent details a novel SEG process for FinFETs, boosting performance and scaling.","keywords":["Forming Non-line-of-sight Source Drain Extension in an Nmos Finfet Using N-doped Selective Epitaxial Growth","FinFET","N-doped source drain extension","selective epitaxial growth","SEG","NMOS FinFET","semiconductor manufacturing","transistor scaling","chip performance","microprocessor technology","patent US-9853129","FinFET fabrication","non-line-of-sight","gate spacer"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853129","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853129","citation_suggestion":"Patentable. \"Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growth\" (US-9853129). https://patentable.app/patents/US-9853129","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853129","json":"https://patentable.app/api/llm-context/US-9853129","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T17:45:18.237Z"}