{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853141","patent":{"patent_number":"US-9853141","title":"Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodes","assignee":null,"inventors":[],"filing_date":"2014-08-04T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":2,"abstract":"Higher voltage resistance is accomplished by expanding a depletion layer more quickly within a circumferential region. A semiconductor device includes an element region, in which an insulated gate type switching element is provided, and the circumferential region. A first trench and a second trench spaced apart from the first trench are provided in the front surface in the circumferential region. Insulating films are provided in the first trench and the second trench. A fourth region of the second conductivity type is provided so as to extend from a bottom surface of the first trench to a bottom surface of the second trench. A fifth region of the first conductivity type continuous from the third region is provided under the fourth region."},"analysis":{"summary":"The patent, \"Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes\" (US-9853141), introduces a significant advancement in power semiconductor technology, specifically addressing the critical need for higher voltage resistance in a compact form factor.\n\nThe core innovation is a novel structural design that accelerates the expansion of the depletion layer within the circumferential region of the device. This rapid and uniform expansion effectively enhances the device's ability to withstand high voltages without experiencing electrical breakdown, a common limitation in conventional power semiconductors.\n\nThe patent describes a semiconductor device comprising an element region with an insulated gate type switching element, and a distinct circumferential region. Key to its technical approach are two spaced-apart trenches in the front surface of the circumferential region, each filled with insulating films. A fourth region of the second conductivity type extends from the bottom of the first trench to the bottom of the second, and a fifth region of the first conductivity type lies continuously beneath this fourth region. This precise arrangement of trenches and doped regions strategically controls the electric field distribution, ensuring premature breakdown is avoided.\n\nFrom a business perspective, this innovation offers substantial value. It enables the creation of more robust, efficient, and compact high-voltage power devices. This directly translates to improved performance and reliability in critical applications such as electric vehicles, industrial power supplies, and renewable energy systems. The ability to achieve higher voltage resistance in a smaller footprint can lead to reduced manufacturing costs, enhanced power density, and open new market opportunities for miniaturized yet powerful electronic systems.\n\nThis technology positions itself to capture a significant share in the growing market for high-performance power semiconductors, providing a competitive edge to manufacturers who adopt its principles. It addresses a fundamental bottleneck in power electronics, paving the way for next-generation devices that are both more powerful and more reliable.","layman_explanation":"### What Problem Does This Solve?\n\nImagine the electrical systems powering everything from your smartphone to an electric vehicle. These systems rely on tiny components called semiconductor devices to control and convert electricity. A major challenge for these components is handling high electrical voltages without breaking down. Think of it like a bridge designed for cars; if too many heavy trucks (high voltage) try to cross it, the bridge might collapse. For semiconductor devices, handling higher voltages typically means making the device physically larger, which increases cost, takes up more space, and can limit how fast it operates. This is a significant bottleneck, especially as we demand more powerful yet compact electronics for everything from data centers to renewable energy systems. Existing solutions often add complexity or compromise on other performance aspects, leaving a gap for a truly efficient and robust high-voltage solution.\n\n### How Does It Work?\n\nThis patent, the Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes, introduces a clever way to make these devices much more resistant to high voltages, without making them bigger. The core idea focuses on the 'edges' of the tiny chip, known as the circumferential region. When a device is under high voltage, it forms an invisible protective barrier called a 'depletion layer.' This barrier helps insulate the device and prevent electrical breakdown.\n\nTraditionally, this depletion layer doesn't always spread out fast or evenly enough at the edges, leading to weak spots. This innovation tackles this by building two tiny, insulated 'ditches' or trenches into the front surface of the chip's edge. These trenches are filled with a non-conductive material. What's truly ingenious is that between and beneath these trenches, specific types of electrically charged material regions are precisely placed. This structural engineering guides the depletion layer, making it expand much more quickly and uniformly across the entire edge region. It's like having strategically placed invisible walls and pathways that force the protective barrier to form faster and stronger, distributing the electrical stress more effectively. The result is a device that can withstand much higher electrical pressures before failing.\n\n### Why Does This Matter?\n\nThis innovation has profound implications across various industries. For electric vehicles, it means more efficient power converters that can handle higher battery voltages, leading to longer ranges and faster charging times. In industrial power supplies, it allows for smaller, more reliable, and more robust systems, reducing the physical footprint of machinery and improving operational uptime. For renewable energy, such as solar inverters and wind turbine control systems, this device enables more efficient conversion and integration of power into the grid. The ability to achieve superior voltage resistance in a compact form factor provides a significant competitive advantage. Companies adopting this technology can offer products with higher performance, greater reliability, and potentially lower overall system costs, opening up new market opportunities and accelerating the development of next-generation electrified systems.\n\n### What's Next?\n\nThis patent sets a new benchmark for high-voltage semiconductor design. We can expect to see devices incorporating this technology enabling further miniaturization and power density improvements across many electronic applications. Its principles could also be adapted for use with emerging wide-bandgap materials like Silicon Carbide (SiC) and Gallium Nitride (GaN), pushing the boundaries of power electronics even further. For investors, this represents a strong intellectual property asset in a critical and growing sector, promising long-term value and market leadership for those who capitalize on its potential.","technical_analysis":"The patent \"Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes\" (US-9853141) presents a sophisticated solution for enhancing the voltage resistance of semiconductor devices, focusing on a critical aspect of power device reliability: electric field management in the peripheral or circumferential region.\n\n**Technical Architecture and Core Innovation:**\nAt its heart, this invention describes a semiconductor device built on a substrate that incorporates an 'element region' and a 'circumferential region'. The element region houses an insulated gate type switching element, such as a MOSFET or IGBT, configured to switch between front and rear surface electrodes. The primary innovation, however, resides in the meticulous design of the circumferential region, which is crucial for preventing premature electrical breakdown under high reverse bias conditions.\n\nThe architecture in the circumferential region involves two key features: a 'first trench' and a 'second trench', both formed in the front surface of the substrate and separated by a specific distance. These trenches are filled with 'insulating films', typically silicon dioxide (SiO2), which serve as dielectric barriers and field plates. The critical element for enhancing voltage resistance is the strategic placement of doped regions in conjunction with these trenches.\n\nSpecifically, a 'fourth region' of the second conductivity type is provided. This region extends from the bottom surface of the first trench to the bottom surface of the second trench. This forms a crucial bridge or connection between the two trenches. Beneath this fourth region, a 'fifth region' of the first conductivity type is provided, which is continuous from a 'third region' (likely the main drift region of the device, typically of the first conductivity type). This third region would typically be a lightly doped epitaxial layer, providing the main voltage blocking capability.\n\n**Implementation Details and Algorithm Specifics:**\nWhen a high reverse voltage is applied across the device, a depletion layer forms and expands from the p-n junctions. In conventional devices, the electric field often concentrates at the corners of the active region or at the surface termination, leading to premature avalanche breakdown. This patent's design mitigates this by intelligently shaping the electric field.\n\n1.  **Trench-Based Field Plates:** The insulating films within the first and second trenches act as buried field plates. They extend the equipotential lines laterally into the bulk, effectively reducing the electric field crowding at the surface and at the trench corners. This is a well-established technique for improving breakdown voltage, but this patent integrates it uniquely with subsequent doped regions.\n2.  **Controlled Depletion Layer Expansion:** The fourth region (second conductivity type) connecting the trench bottoms, and the underlying fifth region (first conductivity type), are engineered to control the path and speed of the depletion layer expansion. As the reverse voltage increases, the depletion layer from the main junction (e.g., between the element region and the drift region) expands. The presence of the fourth region, being of the opposite conductivity type to the drift region, will facilitate the quicker formation and expansion of a depletion region between itself and the drift region. This region effectively 'pulls' the electric field lines deeper into the bulk and spreads them out over a larger area, thereby lowering the peak electric field strength.\n3.  **Doping Profile Optimization:** The doping concentrations and depths of the fourth and fifth regions are critical parameters. The fourth region's doping level is likely higher than the drift region to ensure a strong p-n junction formation, while its extension between the trenches provides a conductive path for the depletion layer to spread. The fifth region helps to transition the electric field smoothly to the bulk, preventing secondary field crowding effects. The 'algorithm' here is not computational but rather a structural optimization to achieve a desired physical phenomenon: rapid and uniform depletion layer growth.\n\n**Integration Patterns and Performance Characteristics:**\nThis architecture can be integrated into standard power semiconductor fabrication processes, leveraging existing trench etching, dielectric deposition, and ion implantation techniques. The primary performance characteristic improved is the breakdown voltage, which is significantly enhanced. This allows for a smaller device footprint for a given voltage rating, leading to higher power density. Furthermore, by distributing the electric field more uniformly, the device exhibits improved reliability and robustness against transient voltage spikes. The on-state resistance and switching characteristics would also need to be optimized in conjunction with this termination scheme, but the core benefit is in the blocking capability.\n\n**Code-level Implications (Analogy):**\nWhile there isn't 'code' in hardware, one can think of the design as a highly optimized 'firmware' for electric field management. Instead of generic 'if (voltage > threshold) then breakdown', this design introduces sophisticated 'subroutines' (trenches, doped regions) that preemptively 'reconfigure' the field conditions ('depletion layer expansion') to handle higher 'input parameters' (voltage) gracefully, preventing catastrophic 'errors' (breakdown). The 'logic' is embedded in the physical layout and material properties, ensuring a predictable and robust response to electrical stress.","business_analysis":"The patent \"Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes\" (US-9853141) represents a significant business opportunity in the power electronics sector, driven by its ability to deliver higher voltage resistance in a more compact and reliable semiconductor device.\n\n**Market Opportunity Size:**\nThe global power semiconductor market is a multi-billion dollar industry, projected to grow significantly, especially with the surge in electric vehicles (EVs), renewable energy infrastructure, industrial automation, and 5G telecommunications. A core driver for this growth is the demand for more efficient and robust power conversion and control. High-voltage power devices are critical components in these sectors. This patent targets a crucial segment within this market by addressing a fundamental limitation of existing technologies – the trade-off between voltage handling, size, and cost. The total addressable market for devices benefiting from this innovation is substantial, encompassing power MOSFETs, IGBTs, and other high-voltage switches.\n\n**Competitive Advantages:**\nThis innovation provides several compelling competitive advantages:\n\n1.  **Superior Voltage Resistance:** The primary benefit is the ability to achieve higher breakdown voltages for a given device footprint or maintain a smaller footprint for a required voltage, outperforming many conventional designs.\n2.  **Increased Power Density:** By reducing the required area for edge termination, devices based on this patent can be made smaller or pack more power into the same space. This is a critical differentiator in space-constrained applications like EVs and portable power systems.\n3.  **Enhanced Reliability:** The optimized electric field distribution minimizes stress points and reduces the likelihood of premature breakdown, leading to more robust and longer-lasting products. This translates directly to reduced warranty claims and improved brand reputation.\n4.  **Cost Efficiency (Indirect):** While the manufacturing process might involve specific trench and doping steps, the ability to achieve higher performance in a smaller die size can lead to higher yield per wafer and reduced material costs in the long run, especially for very high-voltage devices where large silicon areas are typically required for edge termination.\n5.  **Strategic Positioning:** Companies adopting this technology can position themselves as leaders in high-performance power semiconductors, offering solutions that meet the escalating demands of next-generation power systems.\n\n**Revenue Potential and Business Models:**\nThe revenue potential for this technology is significant. It could be commercialized through several business models:\n\n*   **Direct Manufacturing:** Companies owning or licensing this patent could integrate the design into their own power semiconductor product lines (e.g., high-voltage MOSFETs, IGBTs), selling these enhanced devices to OEMs.\n*   **Licensing Agreements:** The patent holder could license the technology to other semiconductor manufacturers, generating substantial royalty revenue. This is particularly attractive for a foundational design improvement.\n*   **Foundry Services:** Semiconductor foundries could offer fabrication services for devices incorporating this design, catering to fabless power semiconductor companies.\n\n**Strategic Positioning:**\nThis patent allows for strategic positioning in segments requiring high-performance power devices. For instance, in the automotive sector, where the transition to 800V and even 1200V architectures in EVs is underway, devices based on this innovation would be highly sought after. Similarly, for renewable energy applications requiring efficient DC-AC conversion at high voltages, this technology offers a robust solution. It enables companies to differentiate their offerings in a crowded market by providing superior performance metrics.\n\n**ROI Projections:**\nInvestment in R&D and manufacturing capabilities to leverage this patent could yield high returns. Companies could see improved profit margins due to higher-value products, increased market share through competitive differentiation, and substantial licensing revenues. The reduced failure rates and improved reliability would also lead to lower customer support costs and enhanced customer loyalty. For investors, this patent signals a strong intellectual property asset in a critical and growing technology sector, promising sustained competitive advantage and long-term value creation.","faqs":[{"answer":"The Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes is a patent (US-9853141) for an advanced semiconductor device designed to achieve significantly higher voltage resistance. It accomplishes this by optimizing the electric field distribution within its circumferential (edge) region, specifically by accelerating the expansion of the depletion layer.\n\nThis device features an element region, which contains an insulated gate type switching element (like a MOSFET or IGBT), and a unique circumferential region. This circumferential region incorporates strategically placed trenches filled with insulating materials, along with precisely doped semiconductor regions.\n\nThe innovation's core lies in how these structural elements work together to control the electrical stress at the device's periphery, preventing premature breakdown. It represents a crucial step forward in developing more robust and efficient power electronic components for high-voltage applications.\n\nKeywords: semiconductor device, voltage resistance, depletion layer, power electronics, insulated gate, US-9853141.","question":"What is Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes?"},{"answer":"This innovative device works by intelligently manipulating the electric field in its circumferential region to handle higher voltages. When a high reverse voltage is applied, a 'depletion layer' – an insulating region devoid of free charge carriers – forms and expands from the p-n junctions within the device. The patent's design ensures this depletion layer expands more quickly and uniformly.\n\nSpecifically, the circumferential region includes a first and second trench, spaced apart and formed in the front surface, which are filled with insulating films. These films act as field plates, spreading out the electric field lines. Crucially, a fourth region of a second conductivity type extends from the bottom of the first trench to the bottom of the second, and a fifth region of a first conductivity type lies continuously beneath this fourth region. This precise arrangement of trenches and doped regions actively guides the electric field, preventing it from concentrating at vulnerable points and allowing the device to withstand higher voltages before breakdown.\n\nKeywords: how it works, electric field, depletion layer expansion, trenches, doped regions, voltage handling.","question":"How does Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes work?"},{"answer":"The Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes patent primarily solves the problem of achieving high voltage resistance in semiconductor devices without compromising on device size, efficiency, or manufacturing complexity. Traditional power semiconductor devices often face a trade-off: higher breakdown voltage typically requires larger physical dimensions (especially in the edge termination area) or more complex, costly fabrication processes.\n\nThe core issue is electric field crowding at the edges of the active region, leading to premature electrical breakdown. This innovation directly addresses this by providing a more effective and compact method for terminating the electric field, ensuring the device can handle significantly higher voltages reliably. This enables the creation of smaller, more powerful, and more robust electronic systems.\n\nKeywords: problem solved, high voltage resistance, semiconductor limitations, electric field crowding, compact design, breakdown voltage.","question":"What problem does Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes solve?"},{"answer":"The patent document (US-9853141) for the Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes does not list specific inventors in the provided abstract. Patent applications typically list the inventors, but this information might be omitted in a summarized abstract or not be relevant for this particular content generation task.\n\nHowever, the assignee (the entity to whom the patent rights are assigned) is also not specified in the provided data. In most cases, the assignee would be a corporation or research institution that employs the inventors and owns the rights to the invention.\n\nKeywords: inventors, assignee, patent ownership, US-9853141, patent details.","question":"Who invented Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes?"},{"answer":"The key benefits of the Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes are manifold and impactful:\n\n1.  **Higher Voltage Resistance:** It achieves superior breakdown voltage, allowing devices to operate reliably under significantly higher electrical pressures.\n2.  **Increased Power Density:** By improving voltage handling in a compact form factor, it enables smaller, lighter, and more powerful electronic modules.\n3.  **Enhanced Reliability and Durability:** The optimized electric field distribution minimizes stress points, leading to more robust devices with longer operational lifetimes and reduced failure rates.\n4.  **Improved Efficiency:** Higher voltage resistance often correlates with better overall power conversion efficiency in systems.\n5.  **Cost-Effectiveness (Indirect):** Smaller die sizes for a given voltage rating can lead to higher yield per wafer, potentially reducing manufacturing costs in the long run.\n\nThese benefits collectively position the technology as a crucial enabler for next-generation power electronics across various high-demand applications.\n\nKeywords: key benefits, high voltage, power density, reliability, efficiency, compact design, semiconductor advantages.","question":"What are the key benefits of Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes?"},{"answer":"The Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes differentiates itself from prior art by offering a more integrated and dynamic approach to electric field management in the circumferential region. While prior art methods like field plates, guard rings, or simply increasing drift layer thickness offer some improvements, they often come with trade-offs in terms of device area, complexity, or sensitivity to manufacturing variations.\n\nThis patent's unique combination of two spaced-apart, insulating-filled trenches and strategically placed doped regions (a fourth region extending between trench bottoms, and a fifth region beneath it) provides a synergistic effect. It actively accelerates and uniformly expands the depletion layer, which is a more effective way to distribute electric field lines than passive field plates or sequentially depleting guard rings. This integrated structural solution allows for higher voltage resistance with a smaller footprint and potentially greater robustness than many conventional termination techniques.\n\nKeywords: prior art, differentiation, trench technology, depletion layer, electric field management, guard rings, field plates, semiconductor innovation.","question":"How is Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes different from prior art?"},{"answer":"The Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes is poised to significantly impact several high-growth industries that rely heavily on advanced power electronics:\n\n1.  **Automotive (Electric Vehicles - EVs):** Enabling more efficient and compact power converters/inverters for higher voltage battery systems, contributing to extended range and faster charging.\n2.  **Renewable Energy:** Improving the reliability and efficiency of inverters and converters in solar, wind, and energy storage systems.\n3.  **Industrial Automation:** Leading to smaller, more robust motor drives, power supplies, and control systems for factory automation.\n4.  **Data Centers:** Enhancing power management units for servers and infrastructure, contributing to energy efficiency and reduced cooling needs.\n5.  **Telecommunications (5G):** Supporting the development of efficient power amplifiers and base station power supplies.\n\nEssentially, any industry requiring high-voltage power conversion and control in a compact, reliable package stands to benefit from this innovation.\n\nKeywords: industry impact, electric vehicles, renewable energy, industrial automation, data centers, 5G, power electronics applications.","question":"What industries will Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes impact?"},{"answer":"The patent application for the Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes (US-9853141) was filed on **August 4, 2014**.\n\nIt was subsequently published and granted on **December 26, 2017**. This timeline indicates the period during which the intellectual property was protected and then officially recognized by the patent office. The publication date marks when the full details of the invention became publicly accessible, while the grant date signifies the official awarding of the patent rights.\n\nKeywords: filing date, publication date, grant date, patent timeline, US-9853141.","question":"When was Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes filed/granted?"},{"answer":"The commercial applications of the Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes are vast, primarily focused on high-performance power electronics where enhanced voltage resistance and power density are critical:\n\n1.  **Electric Vehicle Chargers and Powertrains:** Used in on-board chargers, DC-DC converters, and motor inverters to handle high battery voltages efficiently.\n2.  **Solar Inverters and Wind Turbine Converters:** Essential for converting DC power from renewable sources to AC for the grid, improving efficiency and reliability.\n3.  **Industrial Power Supplies and Motor Drives:** Enabling more compact, robust, and efficient power control for manufacturing equipment and heavy machinery.\n4.  **High-Voltage DC Transmission Systems:** Components for flexible AC transmission systems (FACTS) and high-voltage direct current (HVDC) applications.\n5.  **Server Power Supplies:** Enhancing power delivery units in data centers for better energy efficiency and smaller form factors.\n\nThese applications demonstrate the broad commercial appeal of this innovation in driving efficiency and reliability across the modern electrified economy.\n\nKeywords: commercial applications, power electronics, electric vehicles, renewable energy, industrial power, data centers, high voltage devices.","question":"What are the commercial applications of Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes?"},{"answer":"Future developments for the Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes are likely to build upon its foundational principles of advanced electric field management:\n\n1.  **Adaptation to Wide-Bandgap (WBG) Materials:** The trench and doped region design could be optimized for Silicon Carbide (SiC) and Gallium Nitride (GaN) devices, enabling even higher voltage, temperature, and frequency operation with superior reliability.\n2.  **Further Miniaturization:** Continued refinement of the trench dimensions and doping profiles could lead to even more compact devices, pushing the boundaries of power density.\n3.  **Integration into Power Integrated Circuits (PICs):** The technology could be integrated into more complex power integrated circuits, combining multiple power functions on a single chip.\n4.  **Dynamic Performance Optimization:** Research will likely focus on optimizing the depletion layer dynamics for very fast switching applications, crucial for high-frequency power converters.\n5.  **Cost Reduction through Process Simplification:** Ongoing efforts will aim to streamline manufacturing processes to make this advanced termination scheme even more cost-effective for mass production.\n\nThis innovation sets a strong precedent for future power semiconductor designs, paving the way for more efficient, robust, and integrated power solutions.\n\nKeywords: future developments, wide-bandgap, SiC, GaN, miniaturization, power integrated circuits, dynamic performance, cost reduction, semiconductor trends.","question":"What are the future developments expected for Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes?"}],"topics":["semiconductor device","front and rear electrodes","insulating gate","switching element","voltage resistance","demanding","field","power"],"tech_cluster":null},"seo":{"title":"Semiconductor Device with Front and Rear Surface Electrodes - US-9853141","description":"Discover Semiconductor Device with Front and Rear Surface Electrodes on a Substrate Having Element and Circumferential Regions, an Insulating Gate Type Switching Element in the Element Region Being Configured to Switch Between the Front and Rear Surface Electrodes. This patent enhances voltage resistance by accelerating depletion layer expansion. Full analysis & implications.","keywords":["semiconductor device","front and rear electrodes","insulating gate","switching element","voltage resistance","depletion layer","circumferential region","power electronics","trench technology","high voltage","patent US-9853141","power density","semiconductor innovation","electrical breakdown"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853141","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853141","citation_suggestion":"Patentable. \"Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodes\" (US-9853141). https://patentable.app/patents/US-9853141","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853141","json":"https://patentable.app/api/llm-context/US-9853141","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:00:40.756Z"}