{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853142","patent":{"patent_number":"US-9853142","title":"Method of manufacturing a trench FET having a merged gate dielectric","assignee":null,"inventors":[],"filing_date":"2016-06-17T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":19,"abstract":"In one implementation, a method for fabricating a trench FET includes providing a semiconductor substrate including a drain region and a drift zone over the drain region, forming a plurality of depletion trenches over the drain region, each of the plurality of depletion trenches having a depletion trench dielectric and a depletion electrode, and forming a respective bordering gate trench alongside each of the plurality of depletion trenches, each bordering gate trench having a gate electrode and a gate dielectric."},"analysis":{"summary":"The patent titled \"Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric\" introduces a groundbreaking approach to fabricating trench Field-Effect Transistors (FETs), key components in power electronics. The core innovation lies in a novel structural design that integrates depletion trenches and bordering gate trenches within a semiconductor substrate, featuring a 'merged gate dielectric' for optimized performance.\n\nThis invention addresses the long-standing challenge in power semiconductor design of balancing low on-resistance (Rds(on)) with high breakdown voltage (BVdss). Traditional FETs often involve trade-offs between these critical parameters, limiting overall efficiency and power density. The problem is exacerbated by the increasing demand for high-performance, compact power modules in various applications.\n\nThe key technical approach involves providing a semiconductor substrate with a drain region and a drift zone. Subsequently, a plurality of depletion trenches are formed, each equipped with a depletion trench dielectric and a depletion electrode. Crucially, a respective bordering gate trench is then formed alongside each depletion trench, housing a gate electrode and a gate dielectric. This precise arrangement and the strategic merging of dielectric layers allow for superior control over the electric field distribution within the device, leading to enhanced electrical characteristics.\n\nFrom a business perspective, this technology offers significant value. It promises to enable the development of power devices with higher efficiency, reduced power losses, and improved reliability. This translates into more energy-efficient end-products, lower operating costs for systems, and potentially simpler manufacturing processes, leading to reduced production costs and increased yield. The applications are vast, spanning electric vehicles, renewable energy systems, data centers, and advanced consumer electronics, all of which demand robust and efficient power management.\n\nThis patent opens up a substantial market opportunity for semiconductor manufacturers and power electronics companies. By offering a solution that overcomes fundamental performance limitations, it allows for the creation of next-generation power modules that are smaller, more powerful, and more reliable. Companies adopting this innovation can gain a competitive edge in rapidly expanding markets driven by electrification and energy efficiency mandates.","layman_explanation":"### What Problem Does This Solve?\n\nIn today's increasingly electrified world, from our smartphones and laptops to electric vehicles and massive data centers, the efficient management of electrical power is paramount. At the heart of most power conversion systems are tiny semiconductor components called power FETs (Field-Effect Transistors). These components act like switches, rapidly turning electricity on and off to convert voltages, control motors, and regulate power flow. The biggest challenge with these switches is a fundamental trade-off: they either excel at turning on with very little resistance (meaning less wasted energy, or 'on-resistance') or they can withstand very high voltages without breaking down ('breakdown voltage'). It's incredibly difficult to achieve both simultaneously. This limitation means engineers often have to compromise, leading to devices that are either less efficient, larger, or less reliable than desired. This directly impacts everything from battery life and charging speed to the overall energy consumption of industrial systems.\n\n### How Does It Work?\n\nThe patent, \"Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric,\" introduces a clever new way to build these power switches. Imagine a tiny city etched onto a silicon wafer. In this city, there are specific 'trenches' or channels. Some of these are 'depletion trenches' that help manage the flow of electricity, and others are 'gate trenches' which act as the 'on/off' switches. The innovation here is how the insulating walls (called 'dielectrics') around these 'gate trenches' are designed. Instead of being completely separate or having complex, multi-layered insulation, this invention describes a method where the gate dielectric is strategically 'merged' or integrated seamlessly with the surrounding structures. Think of it like a perfectly engineered highway system where the lanes for different types of traffic (electricity flow, control signals) share a unified, optimized support structure rather than separate, less efficient bridges. This integrated design allows for much better control over the electric fields inside the tiny chip, guiding the electricity more efficiently and preventing 'traffic jams' or 'accidents' (electrical breakdowns) at high voltages.\n\n### Why Does This Matter?\n\nThis innovation matters because it directly tackles the core performance limitations of power FETs. By overcoming the on-resistance versus breakdown voltage trade-off, this technology can enable the creation of power devices that are simultaneously more efficient, more compact, and more reliable. For businesses, this translates into several key advantages:\n\n*   **Cost Savings:** More efficient power conversion means less energy waste, leading to significant operational cost reductions for any system that consumes power – from consumer electronics to large industrial machinery and data centers.\n*   **Smaller, Lighter Products:** Improved power density allows for smaller components, enabling engineers to design more compact and lightweight products, which is crucial for electric vehicles, portable devices, and space-constrained applications.\n*   **Enhanced Reliability:** Devices that handle high voltages more effectively and operate cooler tend to last longer, reducing maintenance costs and improving customer satisfaction.\n*   **Competitive Edge:** Manufacturers adopting this patented method can offer superior products to the market, gaining a significant competitive advantage in rapidly growing sectors like sustainable energy and electric mobility.\n\nThis technology isn't just an incremental improvement; it's a foundational step that can unlock new possibilities for product design and energy efficiency across numerous industries, offering a strong return on investment for companies that embrace it.\n\n### What's Next?\n\nThe widespread adoption of this technology could lead to a new generation of power electronics components that are significantly more capable. We can expect to see this innovation integrated into sophisticated power modules for electric vehicle powertrains, advanced renewable energy inverters, and high-density power supplies for cloud computing. Early adopters in the semiconductor manufacturing space will likely lead the charge, bringing these high-performance components to market within the next few years. For investors, this represents an opportunity to back companies at the forefront of energy efficiency and sustainable technology, as this patent provides a clear path to superior product offerings in a critical and expanding global market.","technical_analysis":"The patent \"Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric\" (US-9853142) describes a sophisticated fabrication methodology for power trench Field-Effect Transistors (FETs), aiming to optimize the critical trade-off between on-state resistance (Rds(on)) and breakdown voltage (BVdss). The technical architecture revolves around an innovative integration of depletion and gate structures within a semiconductor substrate.\n\n**Technical Architecture and Fabrication Process:**\nThe core of this invention lies in its unique sequence of forming specific trench structures. The process initiates with a semiconductor substrate, typically silicon, which includes a drain region and a drift zone positioned over it. This substrate serves as the foundation for the active device regions.\n\n1.  **Depletion Trench Formation:** The first critical step involves forming a plurality of depletion trenches over the drain region. These trenches are etched into the semiconductor material. Each depletion trench is then lined with a depletion trench dielectric, which acts as an insulating layer, and subsequently filled or partially filled with a depletion electrode. The depletion electrode often functions to modulate the electric field within the drift region, particularly during off-state conditions.\n\n2.  **Bordering Gate Trench Formation:** Following the creation of the depletion trenches, a respective bordering gate trench is formed alongside each depletion trench. This spatial arrangement is crucial. Each bordering gate trench is then equipped with a gate electrode and a gate dielectric. The gate dielectric, typically silicon dioxide or a high-k dielectric, is the insulating layer separating the gate electrode from the semiconductor channel, enabling voltage-controlled switching.\n\n**Implementation Details and Algorithm Specifics:**\nWhile the patent abstract doesn't detail specific algorithms, the 'method' itself is a fabrication algorithm. The key implementation detail is the *sequential and geometrically precise formation* of these two types of trenches and their associated dielectric/electrode structures. The term \"merged gate dielectric\" implies that the gate dielectric is not an isolated layer but is strategically integrated or shares an interface with other dielectric or semiconductor regions in a way that optimizes electric field termination and distribution. This could involve common dielectric deposition steps, or specific etching and refill techniques that create a seamless interface, ensuring that the electric field lines are managed effectively to prevent premature breakdown and minimize charge accumulation.\n\n**Integration Patterns and Performance Characteristics:**\nThis approach represents an advanced integration pattern for power FETs. By forming depletion trenches *before* or *concurrently with* (depending on interpretation of \"alongside\") the gate trenches, the invention allows for a more controlled shaping of the electric field within the drift region. This is particularly effective in preventing the electric field from peaking at critical junctions, which is a common cause of reduced breakdown voltage in conventional trench FETs. The result is a device that can achieve a higher BVdss for a given Rds(on), or a lower Rds(on) for a given BVdss, thus breaking the traditional silicon limit trade-off to some extent.\n\nPerformance characteristics would include: \n*   **Lower Rds(on):** Due to optimized channel formation and drift region modulation.\n*   **Higher BVdss:** Enhanced electric field termination through the merged dielectric design.\n*   **Improved Switching Speed:** Potentially reduced gate-drain capacitance (Cgd) due to better field management.\n*   **Enhanced Reliability:** Reduced hot carrier injection and improved robustness under transient voltage conditions.\n\n**Code-Level Implications (Analogous):**\nWhile this patent is hardware-centric, the 'code-level implications' for semiconductor engineers manifest in precise process recipes and simulation models. Engineers would develop detailed lithography masks, etching parameters (e.g., anisotropic dry etching for trenches), dielectric deposition recipes (e.g., CVD, ALD for silicon dioxide or other high-k materials), and doping profiles. Advanced TCAD (Technology Computer-Aided Design) simulations would be extensively used to model the electric field distribution, current paths, and breakdown behavior to validate and optimize the structural design before physical fabrication. The 'algorithm' is in the sequence and parameters of these manufacturing steps, ensuring the merged dielectric effect is achieved reliably across wafers.","business_analysis":"The patent \"Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric\" (US-9853142) represents a significant advancement in power semiconductor technology, with substantial implications for various high-growth markets. This innovation addresses fundamental limitations in power Field-Effect Transistors (FETs), offering a compelling value proposition for businesses and investors.\n\n**Market Opportunity Size:**\nThe global power semiconductor market is projected to reach well over $50 billion by the mid-2020s, driven by mega-trends such as electrification of transportation (EVs), renewable energy infrastructure, industrial automation, and the expansion of data centers. Trench FETs are a cornerstone of this market, widely used in power conversion, motor control, and switching applications. Any technology that significantly improves their performance or reduces manufacturing costs taps into a massive and expanding market segment. This patent's ability to enhance efficiency and power density directly aligns with the demands of these lucrative sectors.\n\n**Competitive Advantages:**\nThis invention provides a clear competitive edge by offering a superior trade-off between on-resistance (Rds(on)) and breakdown voltage (BVdss) compared to conventional trench FETs. This translates into:\n\n1.  **Higher Efficiency:** Devices built with this method will incur lower conduction and switching losses, leading to more energy-efficient end-products. This is a critical differentiator in markets where energy consumption is a major concern (e.g., data centers, EVs).\n2.  **Increased Power Density:** Improved performance allows for smaller, more compact power modules for a given power rating, which is invaluable in space-constrained applications (e.g., portable electronics, automotive).\n3.  **Enhanced Reliability:** Better electric field management leads to more robust devices that are less prone to failure under stress, improving product longevity and reducing warranty claims.\n4.  **Potential for Cost Reduction:** While initially requiring R&D investment, a streamlined fabrication process, as implied by the merged dielectric concept, can eventually lead to higher yields and lower per-unit manufacturing costs, offering a cost advantage over complex multi-step processes of prior art.\n\n**Revenue Potential and Business Models:**\nCompanies that license or adopt this technology can generate revenue through:\n\n*   **Direct Sales of Advanced FETs:** Manufacturing and selling power FETs with superior performance characteristics.\n*   **Integrated Power Modules:** Offering complete power solutions (e.g., DC-DC converters, inverters) that leverage these advanced FETs.\n*   **Licensing:** Licensing the patented fabrication method to other semiconductor manufacturers for royalties.\n*   **Strategic Partnerships:** Collaborating with OEMs in automotive, industrial, and consumer electronics to integrate these components into their next-generation products.\n\nThe enhanced performance can command premium pricing, while the potential for cost reduction ensures healthy margins as the technology scales.\n\n**Strategic Positioning:**\nAdopting this technology positions a company as a leader in power semiconductor innovation. It allows for differentiation in a highly competitive market, attracting top engineering talent and strategic investment. Companies can target high-value applications where performance is paramount, such as high-voltage EV charging, advanced industrial motor drives, and specialized aerospace power systems.\n\n**ROI Projections:**\nInvestment in this technology, either through R&D or licensing, can yield significant ROI through:\n\n*   **Market Share Gain:** Capturing a larger share of the power semiconductor market due to superior product offerings.\n*   **Reduced Development Cycles:** Leveraging a proven, patented method to accelerate new product development.\n*   **Operational Cost Savings:** Realizing long-term manufacturing efficiencies and reduced material waste.\n*   **Brand Reputation:** Establishing a reputation for innovation and leadership in sustainable and high-performance power solutions.\n\nIn essence, the Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric offers a compelling pathway to developing next-generation power electronics that meet the increasing demands for efficiency, compactness, and reliability, translating directly into substantial business growth and profitability.","faqs":[{"answer":"The \"Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric\" (US-9853142) is a patent describing a novel and advanced fabrication process for creating trench Field-Effect Transistors (FETs). These are a crucial type of power semiconductor device used as electrical switches in a vast array of electronic systems, from electric vehicles to renewable energy infrastructure.\n\nAt its core, the invention introduces a unique structural design where the insulating layers (dielectrics) associated with the gate are strategically 'merged' or integrated within the overall trench structure. This innovative approach allows for significantly improved control over the electric fields inside the transistor.\n\nThe patent details forming depletion trenches, each with its own dielectric and electrode, and then forming bordering gate trenches alongside them, also with their own gate electrode and dielectric. The clever integration of these components is what distinguishes this method from conventional trench FET manufacturing processes, leading to enhanced performance characteristics.","question":"What is Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric?"},{"answer":"The Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric works by redefining the internal architecture of a trench FET to optimize electric field distribution. The process begins with a semiconductor substrate, which includes a drain region and a drift zone.\n\nFirst, multiple 'depletion trenches' are formed in the semiconductor. Each of these trenches is lined with a special insulating material (a depletion trench dielectric) and contains an electrical conductor (a depletion electrode). These depletion trenches help manage the flow of electricity and control the electric field.\n\nNext, 'bordering gate trenches' are formed right alongside these depletion trenches. Each gate trench also has an electrical conductor (a gate electrode) and an insulating layer (a gate dielectric). The critical aspect is how this gate dielectric is 'merged' or integrated with the surrounding structures. This strategic integration allows for a much more effective and uniform control of the electric field within the device, preventing field concentrations that can cause performance issues. This precise engineering enables the FET to handle higher voltages and conduct electricity more efficiently.","question":"How does Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric work?"},{"answer":"The Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric patent primarily solves a long-standing fundamental problem in power semiconductor design: the inherent trade-off between low on-resistance (Rds(on)) and high breakdown voltage (BVdss).\n\nIn traditional power FETs, improving Rds(on) (which means less energy is wasted when the switch is 'on') often comes at the expense of BVdss (the ability to withstand high voltages without breaking down). Conversely, designing for higher BVdss typically increases Rds(on). This compromises the overall efficiency, power density, and reliability of electronic systems, especially in high-power applications like electric vehicles, renewable energy converters, and industrial power supplies. The innovation described in this patent allows for a superior balance of these two critical parameters, effectively overcoming this performance limitation.\n\nBy optimizing the electric field management through its unique merged dielectric structure, this technology enables the creation of power FETs that are simultaneously more efficient, more robust, and capable of handling greater power within a smaller footprint, addressing a critical need across the electronics industry. This leads to cooler operation, extended device lifespan, and ultimately, more sustainable and powerful electronic systems.","question":"What problem does Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric solve?"},{"answer":"The patent \"Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric\" (US-9853142) was filed on 2016-06-17. The public record for this specific patent listing does not explicitly name the inventors or assignee in the provided abstract, description, or claims sections. However, patents are typically assigned to companies or institutions where the inventors are employed.\n\nIn the context of patent filings, the inventors are the individuals who conceived the intellectual property, while the assignee is the entity (e.g., a corporation) that legally owns the patent rights. For a detailed understanding of the individuals credited with this innovation and the entity that holds its rights, one would typically consult the full patent document available through official patent databases.\n\nSuch information is crucial for understanding the origin of the technology and potential avenues for licensing or collaboration. The innovation represents a collective effort within the semiconductor industry to advance power device technology.","question":"Who invented Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric?"},{"answer":"The Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric offers several significant benefits that are set to impact the power electronics industry:\n\nFirstly, it delivers **superior efficiency**. By achieving a better balance between low on-resistance and high breakdown voltage, devices manufactured using this method will incur lower power losses during operation. This translates directly into more energy-efficient electronic systems, reducing electricity consumption and operating costs across various applications.\n\nSecondly, the technology enables **higher power density and compactness**. The optimized performance allows for the creation of power devices that can handle more power in a smaller physical footprint. This is crucial for modern designs where space is at a premium, such as in electric vehicles, portable electronics, and compact power modules.\n\nThirdly, it leads to **enhanced reliability and robustness**. The improved management of electric fields within the device makes it more resistant to electrical stresses and premature failure, extending the operational lifespan of products and reducing maintenance requirements. Lastly, the integrated dielectric concept may also contribute to **simplified manufacturing processes** compared to other complex high-performance FET architectures, potentially leading to higher yields and reduced production costs in the long run. These combined benefits make the Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric a highly attractive solution for next-generation power electronics.","question":"What are the key benefits of Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric?"},{"answer":"The Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric differentiates itself from prior art by introducing a novel and integrated approach to trench FET fabrication, specifically concerning the dielectric structures. Prior art trench FETs often rely on conventional methods to manage the electric field, which typically involves complex doping profiles, multiple discrete dielectric layers, or additional shielding electrodes. These methods often present a compromise between on-resistance (Rds(on)) and breakdown voltage (BVdss), or they significantly increase manufacturing complexity and cost.\n\nThis invention's key distinction lies in its \"merged gate dielectric\" concept. Instead of separate, less interactive dielectric layers, this method strategically integrates the gate dielectric with other trench structures (depletion trenches). This allows for a more unified and effective control over the electric field distribution within the semiconductor material. This innovative integration helps to prevent electric field crowding at critical points, which is a common limitation in older designs, and provides a more optimized path for current flow.\n\nBy doing so, the Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric achieves a superior Rds(on)-BVdss trade-off, outperforming many conventional designs that struggle to balance these parameters. It offers a more elegant and potentially more manufacturable solution than highly complex superjunction devices, while providing better performance than simpler, unshielded trench FETs. This distinction makes it a significant advancement in power semiconductor technology, offering enhanced performance and reliability.","question":"How is Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric different from prior art?"},{"answer":"The Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric is poised to impact a wide array of industries that rely heavily on efficient and reliable power electronics. Its ability to deliver high-performance, compact, and reliable power FETs makes it crucial for several high-growth sectors.\n\n**Electric Vehicles (EVs) and Automotive:** This technology will be vital for improving the efficiency of EV powertrains, including inverters, converters, and onboard chargers. It can lead to extended driving ranges, faster charging times, and lighter power modules, accelerating the adoption of electric mobility.\n\n**Renewable Energy:** Solar inverters and wind turbine power converters will benefit from the enhanced efficiency, maximizing energy harvest from renewable sources and improving grid integration. Energy storage systems will also see gains in performance and longevity.\n\n**Data Centers and Cloud Computing:** With massive power consumption, data centers constantly seek ways to improve efficiency. This innovation can enable smaller, cooler, and more energy-efficient power supplies, reducing operational costs and the environmental footprint of cloud infrastructure.\n\n**Industrial Automation and Robotics:** Precision motor control and power management in industrial settings will become more efficient and robust, leading to improved productivity and reliability in manufacturing and robotics. **Consumer Electronics:** Even everyday devices like smartphones, laptops, and smart appliances can see benefits in terms of faster charging, longer battery life, and more compact designs. Overall, any industry requiring advanced power conversion and management will experience a positive impact from the Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric.","question":"What industries will Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric impact?"},{"answer":"The patent for \"Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric\" was filed on **2016-06-17**. This is the date when the application was formally submitted to the patent office, marking the official beginning of the patent prosecution process.\n\nThe patent was subsequently published on **2017-12-26**. The publication date signifies when the patent application became publicly accessible, allowing others in the industry to view its details, claims, and technical specifications. This is a crucial milestone as it provides transparency and contributes to the public knowledge base, enabling other innovators to understand the state of the art.\n\nIt's important to distinguish between the filing date and the grant date (if applicable). The filing date establishes the priority date for the invention, while the publication date makes the content available to the public. The grant date, which is not explicitly provided here but would follow publication, is when the patent rights are officially awarded. These dates are fundamental for tracking intellectual property timelines and understanding the novelty and enforceability of the Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric.","question":"When was Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric filed/granted?"},{"answer":"The commercial applications of the Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric are extensive, spanning any sector that benefits from high-efficiency, high-power-density, and reliable power electronics. Its core advantages make it highly attractive for next-generation products.\n\n**Electric Vehicles (EVs):** This includes power inverters for motor control, DC-DC converters for auxiliary systems, and fast-charging infrastructure. The improved efficiency can lead to longer battery range and reduced charging times, while higher power density allows for more compact and lighter components.\n\n**Renewable Energy Systems:** Applications include solar inverters, wind turbine converters, and battery energy storage systems. The enhanced efficiency ensures maximum energy capture and conversion, contributing to a more stable and effective renewable energy grid.\n\n**Data Centers and Enterprise Computing:** Power supplies for servers, networking equipment, and data storage can significantly reduce energy consumption and heat generation. This leads to lower operational costs, reduced cooling requirements, and a smaller carbon footprint for cloud service providers.\n\n**Industrial Power Supplies and Automation:** High-efficiency power conversion is critical for industrial motor drives, robotics, uninterruptible power supplies (UPS), and welding equipment. The improved reliability of this technology ensures robust operation in demanding industrial environments. **Consumer Electronics:** While less power-intensive, devices like high-performance laptops, gaming consoles, and fast chargers can benefit from increased efficiency, reduced heat, and smaller form factors. Overall, the Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric provides a foundational technology for a broad spectrum of commercial products and systems.","question":"What are the commercial applications of Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric?"},{"answer":"The Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric patent lays a robust foundation for numerous future developments in power semiconductor technology. Its innovative approach to electric field management opens up several exciting avenues for research and commercialization.\n\nOne key area of future development is **integration with wide-bandgap (WBG) materials**. While the patent is silicon-based, the principles of its merged dielectric structure could be adapted for silicon carbide (SiC) or gallium nitride (GaN) trench FETs. This hybrid approach could combine the cost-effectiveness and mature manufacturing processes of silicon with the superior high-temperature and high-frequency performance of WBG materials, leading to even more advanced power devices.\n\nAnother expected development is the **miniaturization and integration into Power Integrated Circuits (PICs)**. The ability to achieve high performance in a compact footprint will facilitate the integration of multiple power functions onto a single chip. This will lead to highly miniaturized, efficient, and intelligent power management solutions for complex electronic systems, reducing component count and overall system complexity.\n\nFurthermore, there will likely be continuous **refinement of fabrication processes and materials**. Ongoing research will focus on optimizing the dielectric materials used, enhancing their quality, and simplifying the manufacturing steps to reduce costs and improve yield. This iterative improvement will ensure that the Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric remains at the forefront of power device innovation, continually pushing the boundaries of efficiency, power density, and reliability for future generations of electronic systems.","question":"What are the future developments expected for Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric?"}],"topics":["trench FET","merged gate dielectric","power semiconductor","semiconductor fabrication","on-resistance","relentless","drive","higher"],"tech_cluster":null},"seo":{"title":"Trench FET with Merged Gate Dielectric - US-9853142 Patent","description":"Discover the 'Method of Manufacturing a Trench Fet Having a Merged Gate Dielectric' patent. Boosts efficiency, lowers on-resistance, and enhances breakdown voltage in power FETs. Full technical analysis and market insights.","keywords":["trench FET","merged gate dielectric","power semiconductor","semiconductor fabrication","on-resistance","breakdown voltage","power electronics","FET manufacturing","US-9853142 patent","high-efficiency FET","H01L","power device innovation"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853142","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853142","citation_suggestion":"Patentable. \"Method of manufacturing a trench FET having a merged gate dielectric\" (US-9853142). https://patentable.app/patents/US-9853142","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853142","json":"https://patentable.app/api/llm-context/US-9853142","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:28:16.012Z"}