{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853143","patent":{"patent_number":"US-9853143","title":"Closed cell lateral MOSFET using silicide source and body regions with self-aligned contacts","assignee":null,"inventors":[],"filing_date":"2016-04-11T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"A closed cell lateral MOSFET device includes minimally sized source/body contacts formed in source cells with silicided source and body diffusion regions formed therein. In this manner, the cell pitch of the cellular transistor array is kept small while the ruggedness of the transistor is ensured. In other embodiments, a closed cell lateral MOSFET device is formed using silicided source and body diffusion regions and self-aligned contacts or borderless contacts as the source/body contacts. The polysilicon gate mesh can be formed using minimum polysilicon-to-polysilicon spacing to minimize the cell pitch of the cellular transistor array."},"analysis":{"summary":"The patent, \"Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts\" (US-9853143), introduces a pivotal advancement in semiconductor technology by designing highly compact yet robust closed-cell lateral MOSFET devices. The core innovation lies in its ability to significantly reduce the transistor cell pitch while simultaneously ensuring the device's ruggedness and reliability.\n\nThe primary problem this invention solves is the long-standing trade-off between miniaturization and durability in power MOSFETs. Traditionally, shrinking the physical footprint of transistors often compromises their ability to handle high power loads or withstand electrical stresses. This patent overcomes this by enabling higher integration density without sacrificing performance.\n\nThe key technical approach involves two synergistic elements: first, the use of silicided source and body diffusion regions. This material engineering technique significantly lowers contact resistance, improving conductivity and current handling. Second, the patent employs minimally sized source/body contacts that are formed using self-aligned or borderless contact methodologies. This precise fabrication ensures optimal contact placement and maximizes the effective contact area within a very small footprint, allowing for a tighter packing density of transistors. Furthermore, the polysilicon gate mesh is designed with minimum spacing, further contributing to cell pitch reduction.\n\nFrom a business perspective, this technology offers substantial value. It enables manufacturers to produce smaller, more efficient, and more reliable power semiconductor devices. This translates into reduced manufacturing costs due to smaller die sizes and higher yields. For end-users, it means more compact electronic products, longer battery life, and enhanced system stability in applications ranging from electric vehicles and data centers to portable electronics and renewable energy systems. The market opportunity is vast, driven by the global demand for energy-efficient and miniaturized power management solutions, positioning this innovation as a critical enabler for next-generation electronic systems.","layman_explanation":"In the world of electronics, we're constantly striving to make devices smaller, faster, and more energy-efficient. At the heart of nearly every electronic device is a tiny switch called a transistor, and one particularly important type is the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). For devices that manage power – like those in electric cars, solar panels, or even your phone's charging circuit – these MOSFETs need to be incredibly robust.\n\n**1. What Problem Does This Solve?**\nImagine you're trying to build a super-fast, powerful sports car, but you also need it to be as small and light as possible. In electronics, engineers face a similar dilemma with power MOSFETs. Historically, making these tiny power switches smaller often meant they became less durable, more prone to overheating, or couldn't handle as much electrical current. This forced a trade-off: either you build a robust, reliable device that's too big, or a compact device that might fail under stress. This limitation slows down innovation in areas like electric vehicles, compact power supplies, and high-performance computing, where both miniaturization and reliability are critical for success. Existing solutions often fell short in achieving both simultaneously, leading to design compromises.\n\n**2. How Does It Work?**\nThis patent, \"Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts\" (US-9853143), offers an elegant solution by rethinking the fundamental architecture of these tiny switches. Think of each transistor as having a miniature 'engine' with specific contact points where electricity flows in and out. The innovation works on two main fronts:\n\nFirst, the inventors apply a special, highly conductive 'skin' (called 'silicide') to the crucial contact areas of the transistor. This is like painting the roads leading to and from our tiny engine with a super-slick, low-friction material. This 'silicided' region makes it much easier for electricity to flow, reducing wasted energy (heat) and ensuring the connections are very efficient, even if they are small.\n\nSecond, they employ a clever manufacturing technique for these contact points called 'self-aligned' or 'borderless' contacts. Imagine building a LEGO model where the pieces automatically snap into the perfect position, even if they're tiny. This self-alignment ensures that the electrical 'plugs' are placed with extreme precision and maximize the connection area within the smallest possible space. By also making the insulating 'walls' between components incredibly thin, the entire 'engine' can be packed much tighter than before. This combined approach allows for an incredibly dense arrangement of transistors without compromising the quality or strength of the electrical connections.\n\n**3. Why Does This Matter?**\nThis innovation fundamentally changes the game for industries reliant on power management. For businesses, this means:\n\n*   **Smaller & Lighter Products:** Manufacturers can build more compact electronic modules, leading to smaller, lighter products (e.g., thinner laptops, more compact electric car batteries).\n*   **Increased Reliability:** Devices built with this technology are more robust and less prone to failure, reducing warranty costs and enhancing brand reputation. This is critical for automotive, industrial, and medical applications.\n*   **Greater Energy Efficiency:** The improved electrical conductivity translates to less wasted energy, leading to longer battery life in portable devices and lower operating costs for large-scale systems like data centers.\n*   **Competitive Edge:** Companies adopting this technology can differentiate their products with superior performance and reliability, capturing market share in high-growth sectors. The ability to produce smaller chips also means more chips per silicon wafer, potentially lowering manufacturing costs.\n\n**4. What's Next?**\nThis patent lays the groundwork for a new generation of power semiconductor devices. We can expect to see its principles adopted in next-gen electric vehicle power trains, more efficient power supplies for AI servers, advanced renewable energy inverters, and even smaller, longer-lasting consumer electronics. As the world continues its drive towards electrification and hyper-connectivity, this innovation will be a silent enabler, pushing the boundaries of what's possible in compact, powerful, and reliable electronics, opening up new investment opportunities in advanced semiconductor manufacturing and power management solutions.","technical_analysis":"The patent \"Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts\" (US-9853143) presents a sophisticated solution for enhancing the performance and density of lateral MOSFET devices. This technical deep dive explores the architectural, material, and fabrication innovations detailed in this patent, focusing on their implications for semiconductor engineering.\n\n**Technical Architecture and Core Innovation:**\nThe invention centers on a closed-cell lateral MOSFET architecture, a common configuration for power applications due to its high current handling and breakdown voltage characteristics. The primary innovation addresses the critical challenge of simultaneously reducing the cell pitch (the repeating unit size of the transistor array) and maintaining or improving device ruggedness. This is achieved by meticulously optimizing the source/body contact regions and the polysilicon gate structure.\n\n**Implementation Details and Material Specifics:**\n1.  **Silicided Source and Body Diffusion Regions:** A cornerstone of this technology is the integration of silicided diffusion regions for both the source and body. Silicidation is a process where a thin layer of highly conductive metal silicide (e.g., nickel silicide, cobalt silicide, titanium silicide) is formed on the exposed silicon areas of the source and body. This step is crucial for two reasons: \n    *   **Reduced Contact Resistance:** The silicide layer significantly lowers the sheet resistance of the diffusion regions and the contact resistance between the silicon and the overlying metal interconnects. This minimizes parasitic losses (I²R losses) during current flow, enhancing power efficiency.\n    *   **Improved Current Spreading:** A uniform, low-resistance layer ensures that current spreads efficiently across the entire contact area, preventing localized current crowding and hot spots that can lead to premature device failure or degradation, thus improving ruggedness.\n\n2.  **Minimally Sized Source/Body Contacts:** To achieve a smaller cell pitch, the physical dimensions of the source/body contacts are deliberately minimized. This reduction in contact area would typically increase contact resistance and compromise reliability in conventional designs. However, the preceding silicidation step mitigates this issue by providing an inherently low-resistance interface, making smaller contacts viable without performance degradation.\n\n3.  **Self-aligned or Borderless Contacts:** The patent emphasizes the use of self-aligned contacts (SAC) or borderless contacts. \n    *   **Self-aligned Contacts:** In SAC processes, the gate electrode (typically polysilicon) itself acts as a sacrificial mask during the etching of contact holes. This ensures that the contact openings are precisely aligned relative to the gate, eliminating the need for large lithographic overlay tolerances. This precision allows contacts to be placed much closer to the gate without the risk of shorting, directly contributing to a smaller cell pitch.\n    *   **Borderless Contacts:** These are a further evolution where the contact opening is allowed to extend over the shallow trench isolation (STI) regions or other dielectric layers, effectively maximizing the contact area within the tightest possible layout. This technique further reduces the overall footprint of the transistor cell.\n\n4.  **Minimized Polysilicon-to-Polysilicon Spacing:** The invention also specifies that the polysilicon gate mesh, which defines the gate electrodes of the cellular array, is formed with minimum polysilicon-to-polysilicon spacing. This is achieved through advanced lithography and etching techniques, directly impacting the transistor density. By reducing this spacing, more gate lines can be packed into a given area, further reducing the cell pitch.\n\n**Performance Characteristics and Code-Level Implications:**\nThe synergistic combination of these techniques results in several key performance enhancements:\n\n*   **High Density and Small Cell Pitch:** The core benefit is the ability to achieve a significantly smaller cell pitch, leading to higher transistor integration density. This directly translates to smaller die sizes, lower manufacturing costs per chip, and the ability to integrate more functionality into a given area.\n*   **Enhanced Ruggedness:** Despite the miniaturization, the device maintains or improves its ruggedness. The low-resistance silicided contacts prevent hot spots and ensure uniform current distribution, leading to better avalanche breakdown characteristics, improved transient response, and higher reliability under stress.\n*   **Improved Efficiency (Lower R_DS(on)):** The reduced parasitic resistance from silicided regions and optimized contacts contributes to a lower on-resistance (R_DS(on)), a critical parameter for power MOSFETs. Lower R_DS(on) translates to reduced conduction losses and higher power conversion efficiency.\n\nFrom a simulation or design automation perspective, this patent implies the need for sophisticated TCAD (Technology Computer-Aided Design) models capable of accurately simulating silicidation kinetics, stress effects from self-aligned contacts, and precise lithographic outcomes at sub-micron scales. Device models for circuit simulation (SPICE) would need to incorporate the improved R_DS(on) and enhanced ruggedness parameters, reflecting the benefits of this advanced structure. For process engineers, the patent outlines critical process control requirements for silicide formation, contact etch selectivity, and polysilicon patterning to achieve the desired performance and density. This technology represents a significant step towards enabling next-generation power management ICs with unprecedented levels of integration and reliability.","business_analysis":"The patent \"Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts\" (US-9853143) represents a strategic advancement in power semiconductor technology with significant commercial applications and market implications. Its core value proposition lies in simultaneously achieving high transistor density and enhanced device ruggedness, addressing a critical bottleneck in modern electronics.\n\n**Market Opportunity Size:**\nThe market for power semiconductors, particularly MOSFETs, is immense and rapidly expanding. Driven by megatrends such as electrification (electric vehicles, industrial automation), energy efficiency (data centers, renewable energy), and miniaturization (consumer electronics, IoT), the global power semiconductor market is projected to reach hundreds of billions of dollars in the coming years. This innovation directly targets the high-growth segments within this market, offering solutions for high-power, high-frequency, and space-constrained applications. The ability to create more efficient and compact power management integrated circuits (PMICs) unlocks new possibilities in these sectors, expanding the total addressable market for advanced MOSFETs.\n\n**Competitive Advantages:**\nThis patent provides a distinct competitive edge to companies that can successfully implement its principles. The key advantages include:\n\n1.  **Superior Power Density:** By significantly reducing the cell pitch, the technology allows for a higher number of transistors per unit area. This means more powerful components can be packed into smaller chips, leading to compact and lighter electronic modules – a crucial differentiator in industries like automotive and portable electronics.\n2.  **Enhanced Reliability and Ruggedness:** Overcoming the traditional trade-off, this invention ensures that miniaturized MOSFETs maintain or improve their ability to withstand electrical stress, thermal cycling, and transient events. This translates to longer product lifespans, reduced warranty claims, and greater customer satisfaction, providing a strong competitive advantage in mission-critical applications.\n3.  **Improved Energy Efficiency:** Lower on-resistance (R_DS(on)) due to silicided contacts results in reduced power losses, leading to more energy-efficient devices. This is a significant selling point in a world increasingly focused on sustainability and reducing operational costs for energy-intensive applications like data centers.\n4.  **Cost-Effectiveness:** Smaller die sizes, enabled by the reduced cell pitch, mean more chips can be fabricated per silicon wafer. This leads to lower manufacturing costs per device and potentially higher profit margins.\n\n**Revenue Potential and Business Models:**\nCompanies can leverage this technology through various business models:\n\n*   **Direct Product Sales:** Semiconductor manufacturers can design and sell advanced power MOSFETs and PMICs incorporating this technology, commanding premium pricing for superior performance.\n*   **Licensing:** The patent holders could license the technology to other semiconductor companies, generating significant royalty revenues.\n*   **Foundry Services:** Foundries offering advanced process nodes could implement these techniques to attract customers developing next-generation power management solutions.\n\n**Strategic Positioning:**\nImplementing this technology allows a company to strategically position itself as a leader in high-performance, compact, and reliable power semiconductors. It can enable market entry into demanding sectors like electric vehicle power trains, aerospace, and high-end industrial power supplies, where stringent performance and reliability requirements exist. Furthermore, it helps companies stay ahead of the curve in terms of miniaturization trends, which are pervasive across all electronics segments.\n\n**ROI Projections:**\nInvestment in R&D and manufacturing capabilities to implement this patent's principles can yield substantial returns. The reduced manufacturing costs, coupled with premium pricing for high-performance products, can lead to strong profit margins. Enhanced product reliability minimizes post-sales support and warranty costs, further improving ROI. For instance, a 10-15% reduction in chip area combined with a 5-10% improvement in efficiency could translate into billions of dollars in market value across the automotive and data center sectors alone. This patent provides a robust foundation for developing next-generation power solutions that deliver both economic and environmental benefits, making it an attractive proposition for investors and strategic planners in the semiconductor industry.","faqs":[{"answer":"Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts (US-9853143) is a groundbreaking patent that describes an innovative design for a closed-cell lateral MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) device. This technology focuses on dramatically improving the density and ruggedness of power MOSFETs, which are essential components in virtually all electronic devices that manage power.\n\nThe core of this invention lies in its unique approach to forming the source and body contact regions within the transistor. It combines the use of highly conductive 'silicided' diffusion regions with 'minimally sized' and 'self-aligned' or 'borderless' contacts. This intricate engineering allows for transistors to be packed much more densely onto a chip without compromising their ability to handle high power loads or withstand electrical stresses.\n\nEssentially, this patent outlines how to make power transistors smaller, more efficient, and more reliable simultaneously, overcoming traditional design limitations. It's a foundational advancement for various high-tech industries.\n\nKeywords: MOSFET, patent US-9853143, closed cell lateral MOSFET, silicided regions, self-aligned contacts, semiconductor device, power electronics.","question":"What is Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts?"},{"answer":"The technology behind Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts (US-9853143) works through a synergistic combination of material science and advanced fabrication techniques.\n\nFirst, it employs **silicided source and body diffusion regions**. This means that a highly conductive metal silicide layer (like nickel silicide) is formed on the silicon areas where electricity enters and exits the transistor. This 'silicided' layer significantly reduces electrical resistance, allowing current to flow more efficiently and minimizing energy loss as heat. This is crucial for maintaining performance even with smaller contact areas.\n\nSecond, the patent utilizes **minimally sized source/body contacts** that are **self-aligned or borderless**. 'Self-aligned' means the contacts are precisely positioned using the gate structure itself as a guide during manufacturing, ensuring perfect alignment and minimizing wasted space. 'Borderless' contacts further maximize the conductive area within a tight footprint by extending over insulating layers. This precise patterning, combined with the low resistance of the silicided regions, allows for an extremely compact arrangement of transistors while ensuring robust electrical connections. Additionally, the polysilicon gate mesh is formed with minimum spacing, further contributing to the overall high density of the transistor array.\n\nKeywords: MOSFET operation, silicidation, self-aligned contacts, borderless contacts, cell pitch, transistor ruggedness, semiconductor fabrication.","question":"How does Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts work?"},{"answer":"Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts (US-9853143) primarily solves the long-standing problem of balancing miniaturization with device ruggedness in power MOSFETs. In traditional designs, engineers often faced a trade-off: making transistors smaller (to increase density and reduce chip size) typically compromised their ability to handle high power loads, resist electrical stress, or dissipate heat effectively. Conversely, designing for high ruggedness usually meant larger device footprints.\n\nThis patent breaks that trade-off. It enables the creation of power MOSFETs that are both significantly smaller (achieving a reduced 'cell pitch') and remarkably robust. This means electronic devices can be made more compact, lighter, and more energy-efficient, without sacrificing reliability or power-handling capability. It addresses the critical need for high-density, high-performance, and highly reliable power management components across various industries.\n\nKeywords: MOSFET challenges, power density, device ruggedness, miniaturization, semiconductor problems, power management, electronic reliability.","question":"What problem does Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts solve?"},{"answer":"The specific inventors' names are not provided in the prompt, but the patent for Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts (US-9853143) was filed on April 11, 2016, and published on December 26, 2017. While the assignee (the company or entity that owns the patent) is also not specified in the provided data, such innovations typically originate from leading semiconductor companies, research institutions, or highly specialized design teams dedicated to advancing microelectronics.\n\nThe development of this technology would have involved expert semiconductor physicists, process engineers, and device architects. Their collective expertise in materials science, lithography, and electrical engineering would have been crucial in conceiving and realizing the complex interplay of silicided regions, self-aligned contacts, and optimized gate spacing that defines this groundbreaking patent. The inventors aimed to push the boundaries of MOSFET performance and integration for next-generation electronic systems.\n\nKeywords: Patent inventors, US-9853143, MOSFET development, semiconductor innovators, patent filing date, publication date.","question":"Who invented Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts?"},{"answer":"The Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts (US-9853143) offers several compelling benefits that significantly advance power semiconductor technology.\n\nFirstly, it enables a **dramatic reduction in cell pitch**, meaning a higher density of transistors can be packed onto a single chip. This leads to smaller die sizes, which reduces manufacturing costs and allows for more compact electronic modules. Secondly, and crucially, it ensures **enhanced device ruggedness and reliability**. Unlike traditional scaling, this innovation allows for miniaturization without compromising the transistor's ability to withstand high electrical currents, voltages, and thermal stresses. This translates to longer device lifespans and reduced failure rates.\n\nThirdly, the use of silicided regions leads to **lower on-resistance (R_DS(on))**, which means less energy is wasted as heat during operation. This results in **improved energy efficiency** for power conversion, a critical factor for battery-powered devices and large-scale power systems. Lastly, these combined benefits open doors for **broader application in high-performance and space-constrained environments**, such as electric vehicles, data centers, and advanced consumer electronics, where both compact size and robust performance are paramount.\n\nKeywords: MOSFET benefits, cell pitch reduction, device ruggedness, energy efficiency, R_DS(on), semiconductor reliability, compact electronics.","question":"What are the key benefits of Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts?"},{"answer":"Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts (US-9853143) distinguishes itself from prior art by uniquely solving the long-standing trade-off between transistor density and ruggedness in power MOSFETs. Prior art typically required designers to choose one over the other: either a physically larger, more robust device or a smaller, but potentially more fragile, one.\n\nThe key differentiation lies in its **synergistic integration** of several advanced techniques. While silicidation and self-aligned contacts were known individually, this patent combines them in a novel way within a closed-cell lateral MOSFET architecture to achieve simultaneous benefits. Specifically, it uses **minimally sized source/body contacts** in conjunction with **silicided diffusion regions** and **self-aligned/borderless contact formation** to dramatically reduce cell pitch *without* compromising ruggedness. Furthermore, the patent emphasizes **minimum polysilicon-to-polysilicon spacing**, pushing integration limits even further than conventional designs.\n\nThis holistic approach allows for superior power density, lower on-resistance, and enhanced reliability that was not effectively achievable in prior art, which often relied on larger contact areas or simpler patterning techniques that limited miniaturization or ruggedness, respectively.\n\nKeywords: Prior art comparison, MOSFET differentiation, silicided contact innovation, self-aligned contact advantages, semiconductor competitive edge, device scaling, power semiconductor technology.","question":"How is Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts different from prior art?"},{"answer":"The Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts (US-9853143) is poised to significantly impact a wide array of industries that rely on high-performance, compact, and reliable power management.\n\nThe **automotive industry**, particularly the electric vehicle (EV) sector, stands to benefit immensely. The technology can lead to lighter, more compact, and more efficient power inverters, motor control units, and onboard chargers, contributing to extended battery ranges and streamlined vehicle designs. **Data centers and cloud computing** will also see a major impact, as more efficient power supplies and voltage regulators can reduce massive energy consumption and cooling costs, improving both economic and environmental sustainability.\n\nIn **consumer electronics**, this innovation will enable thinner laptops, longer-lasting smartphone batteries, and more compact wearable devices by facilitating smaller and more efficient power management integrated circuits (PMICs). The **renewable energy sector** (solar, wind) will benefit from more efficient and reliable power converters and inverters. Finally, **industrial automation, robotics, and aerospace** applications will leverage the enhanced ruggedness and power density for more robust and capable systems in demanding environments.\n\nKeywords: Industry impact, electric vehicles, data centers, consumer electronics, renewable energy, industrial automation, power management, semiconductor applications.","question":"What industries will Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts impact?"},{"answer":"The patent for Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts, identified as US-9853143, has specific dates associated with its lifecycle.\n\nThe **filing date** for this patent was **April 11, 2016**. This is the date when the patent application was officially submitted to the patent office, initiating the examination process.\n\nThe **publication date** for this patent was **December 26, 2017**. This is the date when the patent document was officially published and made publicly available. It's important to note that the publication date typically occurs before the grant date (the date the patent is officially issued), allowing the public to review the invention while the examination is ongoing or completed.\n\nKeywords: Patent filing date, patent publication date, US-9853143, patent timeline, intellectual property, semiconductor patent.","question":"When was Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts filed/granted?"},{"answer":"The commercial applications of Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts (US-9853143) are extensive, driven by its ability to deliver smaller, more efficient, and more reliable power semiconductor devices.\n\nOne major application area is **electric vehicles (EVs)**, where this technology can be used in highly efficient power inverters, DC-DC converters, and battery management systems, leading to improved range, performance, and reduced vehicle weight. In **data centers and cloud infrastructure**, it enables next-generation server power supplies and voltage regulators that significantly reduce energy consumption and operating costs. For **consumer electronics**, it facilitates the creation of thinner, lighter, and longer-lasting devices like smartphones, laptops, and wearables by providing more compact and efficient power management integrated circuits (PMICs).\n\nAdditionally, the **renewable energy sector** can utilize this technology in more efficient solar panel inverters and wind turbine power converters. **Industrial power supplies, robotics, and automation equipment** will benefit from the enhanced ruggedness and power density for more reliable and compact systems. Essentially, any application requiring robust power switching or conversion in a compact form factor can leverage this innovation for commercial advantage.\n\nKeywords: Commercial applications, MOSFET market, EV technology, data center power, consumer electronics, renewable energy, industrial power, power management solutions.","question":"What are the commercial applications of Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts?"},{"answer":"The Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts (US-9853143) lays a robust foundation for numerous future developments in power semiconductor technology. Building upon this innovation, we can anticipate several key advancements.\n\nOne area of future development will likely involve **further scaling and integration**. As manufacturing processes become even more precise, the principles of this patent could be extended to achieve even smaller cell pitches and higher transistor densities, potentially leading to 'power-on-chip' solutions where power management is fully integrated with logic and memory. There will also be research into **novel materials and alternative silicides** that offer even lower resistivity or better thermal stability, pushing the efficiency and ruggedness boundaries further.\n\nAnother direction could be the **integration with emerging 3D device architectures**, such as vertical MOSFETs or FinFET-like structures adapted for power applications, to achieve even greater power density. Furthermore, advancements in **smart power ICs** will leverage this foundational technology to incorporate more intelligent control, sensing, and protection features directly into the power transistor, leading to highly sophisticated and autonomous power management systems. Finally, the focus will continue on **improving manufacturing yields and cost-effectiveness** at these advanced nodes to ensure widespread adoption across all relevant industries.\n\nKeywords: Future developments, MOSFET roadmap, semiconductor innovation, 3D integration, smart power ICs, material science, power electronics trends, advanced manufacturing.","question":"What are the future developments expected for Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts?"}],"topics":["Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts","MOSFET patent","silicided source body","self-aligned contacts","power electronics","semiconductor","industry","quest"],"tech_cluster":null},"seo":{"title":"Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts - US-9853143","description":"Discover US-9853143: Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts. Achieve compact, rugged, and efficient power electronics.","keywords":["Closed Cell Lateral Mosfet Using Silicide Source and Body Regions with Self-aligned Contacts","MOSFET patent","silicided source body","self-aligned contacts","power electronics","semiconductor technology","device ruggedness","cell pitch reduction","US-9853143","power management ICs","lateral MOSFET","silicon innovation","transistor density","advanced semiconductor fabrication"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853143","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853143","citation_suggestion":"Patentable. \"Closed cell lateral MOSFET using silicide source and body regions with self-aligned contacts\" (US-9853143). https://patentable.app/patents/US-9853143","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853143","json":"https://patentable.app/api/llm-context/US-9853143","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:32:13.122Z"}