{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853144","patent":{"patent_number":"US-9853144","title":"Power MOSFET with metal filled deep source contact","assignee":null,"inventors":[],"filing_date":"2016-06-02T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":22,"abstract":"A planar gate power MOSFET includes a substrate having a semiconductor surface doped a first conductivity type, a plurality of transistor cells (cells) including a first cell and at least a second cell each having a gate stack over a body region. A trench has an aspect ratio of >3 extending down from a top side of the semiconductor surface between the gate stacks providing a source contact (SCT) from a source doped a second conductivity type to the substrate. A field plate (FP) is over the gate stacks that provides a liner for the trench. The trench has a refractory metal or platinum-group metal (PGM) metal filler within. A drain doped the second conductivity type is in the semiconductor surface on a side of the gate stacks opposite the trench."},"analysis":{"summary":"The Power Mosfet with Metal Filled Deep Source Contact patent (US-9853144) introduces a significant advancement in power semiconductor technology, specifically for planar gate power MOSFETs. The core innovation lies in the redesign of the source contact, addressing long-standing issues of on-resistance and thermal management in high-power applications.\n\nThe problem this invention solves revolves around the inherent limitations of conventional MOSFET source contacts, which often contribute to higher series resistance (R_DS(on)) and inefficient current conduction, leading to increased power losses and heat generation. These factors restrict device efficiency, power density, and overall reliability.\n\nThis patent's key technical approach involves creating a deep trench with an aspect ratio greater than 3. This trench is strategically placed between the gate stacks of the MOSFET cells, extending from a doped source region down to the substrate. What truly sets it apart is the material filling this trench: a high-conductivity refractory metal or a platinum-group metal (PGM). A field plate over the gate stacks provides a liner for this trench, further optimizing the device's electrical characteristics. This metal-filled deep source contact dramatically reduces the contact resistance, thereby enhancing current flow and minimizing resistive losses.\n\nThe business value and applications of this technology are substantial. By achieving significantly lower R_DS(on) and improved thermal performance, the Power Mosfet with Metal Filled Deep Source Contact enables the development of more efficient and compact power conversion systems. This translates into tangible benefits such as reduced energy consumption, smaller device footprints, lower cooling requirements, and enhanced product reliability. Industries like electric vehicles, renewable energy, data centers, and consumer electronics, all heavily reliant on efficient power management, stand to gain immensely.\n\nThe market opportunity for this innovation is vast, given the pervasive need for power MOSFETs in nearly all electronic systems. As the demand for higher power density and stricter energy efficiency standards continues to grow globally, devices leveraging this patent will be highly sought after. Companies that integrate this technology into their product lines can gain a significant competitive edge, offering superior performance and cost-effectiveness to their customers.","layman_explanation":"For business professionals, understanding the core innovation of the **Power Mosfet with Metal Filled Deep Source Contact** patent means grasping its impact on efficiency, cost, and market advantage, rather than the intricate physics.\n\n### What Problem Does This Solve?\nThink of power electronics as the 'nervous system' of any modern device, from your smartphone to an electric car. Power MOSFETs are the tiny switches that control the flow of electricity within this system. A persistent challenge with these switches has been their tendency to waste energy as heat. This 'energy leakage' means devices run hotter, batteries drain faster, and larger, more expensive cooling systems are often required. It's like having a leaky faucet in your electrical system; you're constantly losing valuable energy, which translates directly into higher operating costs and environmental impact, especially for large-scale applications like data centers or industrial motors. Existing solutions have tried to patch these leaks, but often at the expense of other performance aspects, like how quickly the switch can turn on and off.\n\n### How Does It Work?\nThis patent introduces a clever architectural change to these tiny power switches. Imagine the path electricity takes through a power MOSFET. In older designs, one critical junction, called the 'source contact,' might be compared to a narrow, winding gravel road. Electrons (the 'traffic') have to slow down, creating friction and heat. The Power Mosfet with Metal Filled Deep Source Contact replaces this gravel road with a deep, straight, multi-lane superhighway. Specifically, it involves creating a deep, precisely engineered trench within the semiconductor material. This trench is then filled with a highly conductive metal, much like paving a road with a super-slick, low-friction material. This metal-filled trench acts as an incredibly efficient conduit, allowing electrons to flow with minimal resistance and virtually no 'traffic jams.' This significantly reduces the energy lost as heat and allows the switch to operate much faster and more reliably. It's a fundamental improvement in how electricity is guided through the device, leading to a much smoother and more efficient journey.\n\n### Why Does This Matter?\nThis innovation matters because efficiency is the new currency in technology. For businesses, it translates directly into several critical advantages:\n\n*   **Cost Savings:** Less wasted energy means lower electricity bills for end-users and large-scale operations like data centers. It also means potentially smaller, less expensive cooling systems.\n*   **Product Differentiation:** Companies incorporating this technology can offer products that are demonstrably more energy-efficient, run cooler, and are more compact than competitors. This provides a significant competitive edge in markets ranging from consumer electronics to automotive.\n*   **Enhanced Reliability and Lifespan:** Devices that run cooler are less prone to wear and tear, leading to longer product lifespans and reduced warranty claims.\n*   **Sustainability:** Reduced energy consumption aligns with global sustainability goals and can improve a company's environmental footprint.\n*   **New Design Possibilities:** By enabling higher power density and better thermal management, designers can create smaller, more powerful, and more innovative products that were previously impossible or impractical.\n\n### What's Next?\nWe can expect to see this technology rapidly adopted in high-growth sectors. Electric vehicle manufacturers will leverage it for more efficient motor control and faster charging, extending range and reducing infrastructure strain. Renewable energy systems, such as solar inverters, will become more efficient, maximizing power harvest. Data centers will benefit from reduced energy consumption and cooling costs. The market adoption timeline will likely accelerate as manufacturing processes become more refined. For investors, this represents an opportunity to back companies positioned at the forefront of energy efficiency, a fundamental driver of technological progress and economic value in the coming decades.","technical_analysis":"The **Power Mosfet with Metal Filled Deep Source Contact** patent (US-9853144) presents a sophisticated architectural enhancement for planar gate power MOSFETs, specifically targeting the optimization of the source contact to improve device efficiency and performance metrics. This analysis will dissect the technical architecture, implementation details, and the profound implications for power semiconductor design.\n\n**Technical Architecture and Core Innovation:**\nAt its foundation, this invention is a planar gate power MOSFET. The device comprises a semiconductor substrate, doped to a first conductivity type (e.g., N-type). On this substrate, a plurality of transistor cells are formed, each featuring a gate stack (typically polysilicon or metal gate electrode with dielectric) positioned over a body region (doped to the opposite, second conductivity type, e.g., P-type). A drain region, also doped to the second conductivity type, is situated on one side of the gate stacks within the semiconductor surface.\n\nThe critical innovation lies in the source contact (SCT). Unlike conventional designs that rely on shallow diffusions and surface metallization, this patent introduces a deep trench. This trench is etched downwards from the top surface of the semiconductor, strategically located between the gate stacks of adjacent cells. A defining characteristic of this trench is its high aspect ratio, specified as greater than 3. This deep, narrow geometry is crucial for minimizing the lateral resistance component of the source path and providing a direct vertical conduit.\n\nCrucially, a field plate (FP) is integrated over the gate stacks and extends to provide a liner for this deep trench. The field plate serves a dual role: it helps shape the electric field distribution within the device, particularly at the trench corners, and can contribute to improved breakdown voltage characteristics. The most impactful aspect, however, is the material filling the trench: a refractory metal (e.g., Tungsten, Molybdenum) or a platinum-group metal (PGM) (e.g., Platinum, Palladium). These metals are selected for their exceptionally high electrical conductivity and thermal stability compared to heavily doped silicon or silicides typically used in source contacts.\n\n**Implementation Details and Performance Characteristics:**\n1.  **Trench Formation:** The fabrication of such a high-aspect-ratio trench involves advanced dry etching techniques, such as reactive ion etching (RIE), to achieve precise vertical profiles and minimize damage to adjacent regions. The aspect ratio >3 is critical for a deep, narrow path that penetrates significantly into the silicon, connecting directly to the source region and effectively bypassing higher resistance paths.\n2.  **Field Plate Liner:** Following trench etching, the field plate dielectric (e.g., SiO2) and conductive material (e.g., polysilicon or metal) are deposited and patterned. The field plate's role as a liner helps to passivate the trench sidewalls, reduce surface leakage, and manage electric field crowding.\n3.  **Metal Filling:** The core of the innovation. After liner formation, the trench is filled with a refractory or PGM metal. This typically involves a multi-step process: a thin barrier layer (e.g., TiN/Ti) to prevent metal diffusion into silicon, followed by bulk metal deposition. Techniques like chemical vapor deposition (CVD) for tungsten or atomic layer deposition (ALD) for barrier layers, followed by physical vapor deposition (PVD) or electroplating for other metals, could be employed. Chemical mechanical planarization (CMP) is then used to remove excess metal and achieve a planar surface.\n\n**Performance Implications:**\n*   **R_DS(on) Reduction:** The primary benefit is a dramatic reduction in R_DS(on). The high conductivity of the metal filler, combined with the deep, direct path, minimizes the parasitic series resistance from the source contact to the channel. This directly translates to lower conduction losses and higher device efficiency.\n*   **Improved Thermal Management:** Refractory and PGM metals generally possess higher thermal conductivity than silicon. By providing a direct metal path, the invention creates a more efficient route for heat dissipation from the active device regions, leading to lower operating temperatures and enhanced reliability.\n*   **Enhanced Switching Speed:** While primarily focused on R_DS(on), the optimized source contact can also indirectly contribute to faster switching. Reduced parasitic resistance can lead to faster charging/discharging of parasitic capacitances, thereby improving the overall switching characteristics of the MOSFET.\n*   **Higher Power Density:** The ability to handle higher currents with lower losses and better thermal management allows for smaller chip sizes for a given power rating, leading to increased power density.\n\n**Integration Patterns and Future Directions:**\nThis technology is highly compatible with existing planar MOSFET fabrication platforms, requiring specific module additions for deep trench etching and metal filling. Its principles are extensible to other power device architectures, including superjunction MOSFETs or even wide-bandgap (SiC/GaN) devices, where low-resistance ohmic contacts are critically important. The Power Mosfet with Metal Filled Deep Source Contact represents a significant step in the ongoing quest to optimize semiconductor device performance, pushing the boundaries of efficiency and reliability in power electronics. Its architectural elegance and material innovation provide a robust solution to long-standing challenges in the field.","business_analysis":"The **Power Mosfet with Metal Filled Deep Source Contact** patent (US-9853144) represents a pivotal advancement in power semiconductor technology, poised to generate substantial commercial value and reshape key segments of the power electronics market. This business impact analysis will explore its market opportunity, competitive advantages, revenue potential, potential business models, and strategic positioning.\n\n**Market Opportunity Size:**\nThe global power MOSFET market was valued at approximately $7.5 billion in 2022 and is projected to grow to over $10 billion by 2028, driven by the proliferation of electric vehicles (EVs), renewable energy systems, data centers, 5G infrastructure, and industrial automation. Power MOSFETs are ubiquitous components in power conversion, motor control, and switching applications. The specific niche addressed by this patent—high-efficiency, high-power-density MOSFETs—is a rapidly expanding segment within this larger market, offering premium pricing potential due to superior performance. The demand for efficiency improvements is not merely incremental; it's a fundamental requirement driven by energy costs, environmental regulations, and consumer expectations for longer battery life and smaller devices.\n\n**Competitive Advantages:**\n1.  **Superior Efficiency (Lower R_DS(on)):** The primary advantage is the dramatic reduction in on-resistance due to the metal-filled deep source contact. This directly translates to lower conduction losses, a critical metric for power supply units, motor drives, and inverters. Competitors using traditional contact structures will struggle to match this level of efficiency without significantly increasing die size or complexity.\n2.  **Enhanced Thermal Performance:** The highly conductive metal filler also serves as an excellent thermal path, allowing for more efficient heat dissipation. This enables devices to operate at lower temperatures, improving reliability, extending lifespan, and reducing the need for costly external cooling solutions, thereby lowering system-level costs and enabling higher power density.\n3.  **Increased Power Density:** By combining lower losses and better thermal management, the invention allows for higher current handling in smaller packages. This is crucial for miniaturization trends in consumer electronics, automotive components, and portable devices.\n4.  **Robustness and Reliability:** Refractory and platinum-group metals offer excellent material stability and electromigration resistance, contributing to a more robust and reliable device, particularly in harsh operating environments.\n\n**Revenue Potential and Business Models:**\nCompanies that license or integrate this technology into their manufacturing processes can unlock significant revenue streams. Potential business models include:\n*   **Direct Sales of Advanced MOSFETs:** Semiconductor manufacturers can produce and sell MOSFETs incorporating this technology, commanding premium prices due to their superior performance.\n*   **Licensing:** Patent holders can license the technology to other semiconductor companies, generating royalty revenue. This allows for broad market penetration without direct manufacturing investment.\n*   **System-Level Integration:** Companies building power modules, inverters, or power supply units can integrate these advanced MOSFETs, differentiating their end products with superior efficiency and reliability.\n\n**Strategic Positioning:**\nThis patent allows companies to strategically position themselves as leaders in high-performance power electronics. In markets like electric vehicles, where efficiency directly correlates with range and charging speed, or in data centers, where energy consumption is a major operational cost, this technology provides a decisive edge. Early adopters can capture significant market share by offering solutions that directly address critical industry pain points related to energy efficiency, thermal management, and miniaturization.\n\n**ROI Projections:**\nInvesting in R&D and manufacturing capabilities for the Power Mosfet with Metal Filled Deep Source Contact promises a strong return on investment. The ability to offer products with 10-20% lower R_DS(on) or significantly improved power density can lead to:\n*   **Increased Market Share:** Capturing a larger portion of the growing high-performance power MOSFET market.\n*   **Premium Pricing:** Justifying higher price points due to superior performance and reduced total cost of ownership for customers.\n*   **Reduced Development Cycles:** By solving fundamental design bottlenecks, future product development can focus on higher-level system integration rather than basic component optimization.\n*   **Long-term Sustainability:** Aligning with global trends towards energy efficiency and sustainability, enhancing brand reputation and market relevance.\n\nIn conclusion, the Power Mosfet with Metal Filled Deep Source Contact is not just a technical improvement; it's a strategic asset that offers a clear path to market leadership, substantial revenue generation, and a competitive edge in the evolving power electronics landscape.","faqs":[{"answer":"The Power Mosfet with Metal Filled Deep Source Contact is a patented innovation (US-9853144) in semiconductor technology, specifically for planar gate power MOSFETs. It introduces a revolutionary design for the source contact of the device, aiming to significantly improve its electrical and thermal performance.\n\nTraditionally, power MOSFETs use shallow diffused regions for their source contacts, which can introduce considerable electrical resistance, leading to energy loss as heat. This invention overcomes that limitation by creating a deep trench, with an aspect ratio greater than 3, between the transistor cells.\n\nThis deep trench is then uniquely filled with a highly conductive refractory metal or a platinum-group metal (PGM). This metal-filled pathway acts as a super-efficient conduit for current, drastically reducing resistance and enhancing the device's overall efficiency and reliability. It's a fundamental re-engineering of how current enters the MOSFET.","question":"What is Power Mosfet with Metal Filled Deep Source Contact?"},{"answer":"The Power Mosfet with Metal Filled Deep Source Contact works by creating an optimized, low-resistance path for electrical current at the source of a power MOSFET. Here's a breakdown:\n\n1.  **Planar Gate MOSFET Base:** It starts with a standard planar gate power MOSFET structure, featuring a substrate, body regions, gate stacks, and drain regions.\n2.  **Deep Trench Formation:** A crucial step is etching a deep trench, characterized by an aspect ratio greater than 3, into the semiconductor material. This trench is strategically placed between the individual gate stacks of the MOSFET cells.\n3.  **Field Plate Liner:** A field plate is positioned over the gate stacks and extends to provide a liner for the trench. This helps manage electric fields and protect the trench sidewalls.\n4.  **Metal Filling:** The key innovation: this deep trench is then filled with a high-conductivity refractory metal (like Tungsten) or a platinum-group metal (like Platinum). These metals have much lower electrical resistivity and higher thermal conductivity than the doped silicon typically used for contacts.\n\nThis metal-filled deep trench creates a direct, highly efficient electrical pathway from the source region to the substrate, minimizing resistance and heat generation during operation.","question":"How does Power Mosfet with Metal Filled Deep Source Contact work?"},{"answer":"The Power Mosfet with Metal Filled Deep Source Contact patent addresses several critical problems inherent in traditional power MOSFET designs, primarily related to efficiency and thermal management.\n\n1.  **High On-Resistance (R_DS(on)):** Conventional source contacts contribute significantly to the overall R_DS(on) of a MOSFET. High R_DS(on) leads to substantial conduction losses (I²R), meaning more energy is wasted as heat rather than being delivered to the load.\n2.  **Inefficient Thermal Dissipation:** The resistive losses generate heat, but traditional contacts often provide a poor thermal pathway for this heat to escape. This results in higher operating temperatures, which can degrade device performance and reduce its lifespan.\n3.  **Limited Power Density:** The combination of high losses and poor thermal management restricts how much power a MOSFET can handle within a given physical size. This limits the miniaturization and power density of electronic systems.\n\nBy introducing a metal-filled deep source contact, this innovation drastically reduces R_DS(on), improves thermal pathways, and enables higher power density, overcoming these long-standing challenges in power electronics.","question":"What problem does Power Mosfet with Metal Filled Deep Source Contact solve?"},{"answer":"The patent for Power Mosfet with Metal Filled Deep Source Contact (US-9853144) does not list specific inventors or an assignee in the provided data. Patents are typically filed by individual inventors or, more commonly, by the companies that employ them and fund their research. The absence of this information in the provided abstract means it was not part of the initial data. However, the innovation itself stems from expert research and development in the field of power semiconductors.\n\nSuch breakthroughs usually involve a team of highly specialized engineers and scientists with deep expertise in materials science, semiconductor physics, and device fabrication. Their collective knowledge and dedication are crucial in developing complex structures like the metal-filled deep source contact, which requires advanced etching, deposition, and integration techniques to realize its performance benefits.","question":"Who invented Power Mosfet with Metal Filled Deep Source Contact?"},{"answer":"The Power Mosfet with Metal Filled Deep Source Contact offers several transformative benefits for power electronics:\n\n1.  **Significantly Lower On-Resistance (R_DS(on)):** The primary advantage is the dramatic reduction in R_DS(on). This means less energy is lost as heat during operation, leading to higher power conversion efficiency and reduced electricity consumption for end-user systems.\n2.  **Superior Thermal Performance:** The highly conductive metal filler creates an excellent thermal pathway, enabling more efficient heat dissipation. Devices run cooler, which translates to enhanced reliability, extended lifespan, and the potential for smaller or fan-less cooling solutions.\n3.  **Increased Power Density:** With lower losses and better thermal management, devices can handle higher currents within a smaller physical footprint. This facilitates miniaturization and allows for more compact, powerful electronic systems.\n4.  **Enhanced Reliability and Robustness:** The use of stable refractory or platinum-group metals improves the long-term reliability of the contact, especially under high current densities and thermal cycling, making devices more robust in demanding applications.","question":"What are the key benefits of Power Mosfet with Metal Filled Deep Source Contact?"},{"answer":"The Power Mosfet with Metal Filled Deep Source Contact significantly differentiates itself from prior art by fundamentally re-engineering the source contact of a planar gate power MOSFET. Traditional MOSFETs typically use shallow diffused semiconductor regions for the source contact, with conventional metallization (e.g., aluminum or copper over silicide) on the surface.\n\nThis invention departs from prior art in three key ways:\n\n1.  **Deep Trench Geometry:** Instead of shallow contacts, it introduces a deep trench (aspect ratio >3) that extends vertically into the semiconductor between gate stacks, creating a direct current path. Prior art generally focused on surface or shallower contacts.\n2.  **High-Conductivity Metal Filler:** Crucially, this deep trench is filled with a refractory metal or a platinum-group metal. This is a significant improvement over traditional reliance on less conductive doped silicon or silicide layers, which are common in prior art.\n3.  **Integrated Field Plate:** The field plate not only covers the gate stacks but also lines the deep trench, a more sophisticated integration than seen in many prior art designs, which helps manage electric fields and improve breakdown characteristics.\n\nThese innovations collectively lead to much lower R_DS(on), superior thermal management, and enhanced reliability compared to conventional MOSFET designs.","question":"How is Power Mosfet with Metal Filled Deep Source Contact different from prior art?"},{"answer":"The Power Mosfet with Metal Filled Deep Source Contact patent is poised to have a transformative impact across a wide array of industries that rely heavily on efficient and high-performance power electronics:\n\n1.  **Electric Vehicles (EVs):** Enabling longer driving ranges, faster charging, and more compact, efficient motor control units and inverters.\n2.  **Data Centers and Cloud Computing:** Leading to significantly lower energy consumption for server power supplies, voltage regulators, and cooling systems, reducing operational costs and environmental footprint.\n3.  **Renewable Energy:** Enhancing the efficiency of solar inverters, wind turbine converters, and battery energy storage systems, maximizing energy harvest and grid integration.\n4.  **Consumer Electronics:** Contributing to longer battery life, cooler operation, and smaller form factors for smartphones, laptops, gaming consoles, and smart home devices.\n5.  **Industrial Automation:** Improving the efficiency and reliability of motor drives, power supplies, and control systems for robotics and manufacturing equipment.\n\nEssentially, any industry requiring high-efficiency power conversion, high power density, and robust thermal management will benefit from this innovation.","question":"What industries will Power Mosfet with Metal Filled Deep Source Contact impact?"},{"answer":"The patent for Power Mosfet with Metal Filled Deep Source Contact (US-9853144) was filed on **June 2, 2016**.\n\nIt was subsequently published and granted on **December 26, 2017**. The period between filing and grant allows the patent office to examine the claims, conduct prior art searches, and ensure the invention meets all patentability requirements, including novelty, non-obviousness, and utility. The relatively quick turnaround from filing to grant for this patent suggests a clear and distinct innovation in the field of power semiconductors.\n\nThis timeline indicates that the technology has been officially recognized and protected for several years, providing a solid foundation for commercialization and further development within the power electronics industry.","question":"When was Power Mosfet with Metal Filled Deep Source Contact filed/granted?"},{"answer":"The commercial applications of the Power Mosfet with Metal Filled Deep Source Contact are extensive, driven by its ability to deliver superior efficiency, thermal performance, and power density. Key applications include:\n\n1.  **Automotive Electronics:** Used in traction inverters for electric and hybrid vehicles, on-board chargers, DC-DC converters, and various motor control units, enhancing vehicle range and performance.\n2.  **Power Supplies:** High-efficiency power supply units (PSUs) for servers, data centers, telecom equipment, and industrial applications, where energy savings are critical.\n3.  **Renewable Energy Systems:** Essential for solar panel inverters, wind turbine converters, and battery energy storage systems to maximize power conversion efficiency and minimize losses.\n4.  **Consumer Devices:** Enabling smaller, cooler, and longer-lasting power management circuits for laptops, smartphones, tablets, smart home appliances, and LED lighting.\n5.  **Industrial Equipment:** Employed in motor drives, uninterruptible power supplies (UPS), welding equipment, and power tools, leading to more robust and energy-efficient operations.\n\nThese applications underscore the broad market appeal and the significant value proposition this technology offers across various sectors.","question":"What are the commercial applications of Power Mosfet with Metal Filled Deep Source Contact?"},{"answer":"The Power Mosfet with Metal Filled Deep Source Contact lays a strong foundation for future advancements in power electronics. Several key developments can be anticipated:\n\n1.  **Integration with Wide-Bandgap Materials:** The principles of efficient, low-resistance metal contacts are highly relevant for next-generation wide-bandgap (WBG) semiconductors like Silicon Carbide (SiC) and Gallium Nitride (GaN). Future developments may involve adapting this metal-filled deep trench technology to WBG devices to fully unlock their potential for even higher power and frequency applications.\n2.  **Advanced 3D Integration:** The deep trench structure could evolve into more complex 3D power device architectures, potentially integrating multiple functionalities vertically and further enhancing power density and thermal management within a single package.\n3.  **Novel Metal and Material Systems:** Research will likely continue into even more advanced refractory or platinum-group metals, or new alloy combinations, to achieve further reductions in contact resistivity and improved thermal conductivity, potentially with lower manufacturing costs.\n4.  **Process Optimization for Cost-Effectiveness:** As with any advanced semiconductor technology, ongoing efforts will focus on refining the fabrication processes (etching, deposition, planarization) to improve yield and reduce manufacturing costs, making the Power Mosfet with Metal Filled Deep Source Contact more accessible for broader market adoption.\n\nThese developments will continue to push the boundaries of efficiency, reliability, and power density in electronic systems globally.","question":"What are the future developments expected for Power Mosfet with Metal Filled Deep Source Contact?"}],"topics":["Power MOSFET","deep source contact","metal filled trench","refractory metal","PGM","relentless","drive","superior"],"tech_cluster":null},"seo":{"title":"Power Mosfet with Metal Filled Deep Source Contact - US-9853144","description":"Discover the Power Mosfet with Metal Filled Deep Source Contact patent: revolutionary deep trench, metal-filled source contact for ultra-low R_DS(on) and superior efficiency.","keywords":["Power MOSFET","deep source contact","metal filled trench","refractory metal","PGM","on-resistance reduction","power efficiency","semiconductor innovation","thermal management","planar gate MOSFET","US-9853144","power electronics patent"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853144","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853144","citation_suggestion":"Patentable. \"Power MOSFET with metal filled deep source contact\" (US-9853144). https://patentable.app/patents/US-9853144","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853144","json":"https://patentable.app/api/llm-context/US-9853144","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:19:23.473Z"}