{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853145","patent":{"patent_number":"US-9853145","title":"High-voltage semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-10-04T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"High-voltage semiconductor devices are provided. The high-voltage semiconductor device includes a substrate and an isolation structure in the substrate. The high-voltage semiconductor device includes a gate structure disposed on the substrate, wherein the gate structure is separated from the isolation structure by a distance. The high-voltage semiconductor device also includes a metal electrode disposed on the gate structure, wherein the metal electrode extends to directly above the isolation structure. The high-voltage semiconductor device further includes an interconnection structure including the lowest metal layer, wherein the metal electrode is between the lowest metal layer and the gate structure. Methods of manufacturing the high-voltage semiconductor device are also provided."},"analysis":{"summary":"The High-voltage Semiconductor Device and Method of Manufacturing the Same patent introduces a significant advancement in the design and fabrication of high-voltage semiconductor devices. At its core, this innovation provides a solution to the persistent challenge of achieving high breakdown voltage and reliability within a compact form factor, a critical need across various power electronics applications.\n\nThe central problem addressed by this patent is the difficulty in effectively managing electric fields in high-voltage devices. Traditional approaches often lead to larger device sizes or complex manufacturing processes to prevent electrical breakdown, compromising efficiency and increasing costs. This invention tackles this by optimizing the device's internal architecture.\n\nThe key technical approach involves a substrate with an embedded isolation structure and a gate structure disposed on the substrate. The ingenuity lies in positioning a metal electrode directly on the gate structure, ensuring it extends over the isolation structure. This strategic placement, further enhanced by the metal electrode's specific relationship within the interconnection structure (between the lowest metal layer and the gate structure), allows for precise electric field shaping and control. This design effectively mitigates electric field crowding, leading to a higher breakdown voltage and improved device robustness.\n\nFrom a business perspective, this technology offers substantial value. It enables the creation of more efficient, reliable, and compact power electronic components, which are essential for the next generation of electric vehicles, renewable energy systems, industrial power supplies, and data center infrastructure. The enhanced performance and potential for simplified manufacturing processes can lead to reduced production costs, increased market competitiveness, and faster adoption of advanced power solutions.\n\nThe market opportunity for this invention is vast, spanning the rapidly growing power electronics sector. As industries continue to prioritize energy efficiency and miniaturization, devices built upon this patent will be crucial enablers, offering a clear competitive advantage and significant ROI for companies that integrate this innovative approach into their product lines.","layman_explanation":"### What Problem Does This Solve?\nImagine you're building a city, and you need to run super-high-voltage power lines through it. The challenge is ensuring that this electricity stays safely within its designated pathways and doesn't 'leak' or 'jump' out, causing blackouts or damage. In the world of tiny computer chips, this problem is even more critical. High-voltage semiconductor devices are like the electrical traffic cops for industries such as electric vehicles, solar power plants, and large data centers. They need to handle a lot of electrical pressure (high voltage) without breaking down, but they also need to be small and efficient. Historically, making these devices robust enough often meant making them larger or incredibly complex to manufacture, increasing costs and limiting how compact and powerful our electronics could be.\n\n### How Does It Work?\nThis patent, the High-voltage Semiconductor Device and Method of Manufacturing the Same, introduces a clever new way to build these tiny electrical components. Think of it like a smart redesign of those electrical pathways and safety barriers. Instead of just having a simple 'fence' (an isolation structure) to contain the electricity and a 'gate' (a gate structure) to control it, this invention adds a special 'metal bridge' (a metal electrode). This metal bridge is placed directly on top of the gate, and crucially, it extends to cover part of the isolation fence. This isn't just random placement; it's a strategic move.\n\nBy having this metal bridge precisely positioned, it acts like a 'force field shaper.' It helps to smoothly distribute the electrical pressure across the device, preventing it from concentrating in one spot and causing a breakdown. It's like having a well-designed ramp and overpass system that guides traffic perfectly, even at high speeds, so there are no sudden crashes. This allows the device to handle much higher voltages safely and reliably, without needing to be physically larger. The patent also details how to manufacture this new design efficiently, making it practical for real-world production.\n\n### Why Does This Matter?\nThis innovation matters because it directly impacts the performance and cost of many technologies we rely on. For electric vehicles, it means more efficient power converters, potentially leading to longer battery ranges and faster charging times. For renewable energy, it can make solar inverters more robust and efficient, helping to integrate clean energy into the grid more effectively. In industrial settings and data centers, it translates to more reliable power supplies and smaller, more energy-efficient equipment.\n\nFrom a business perspective, companies adopting this technology can create products that are superior to competitors' offerings in terms of power density, efficiency, and reliability. This can lead to increased market share, reduced warranty claims due to fewer breakdowns, and a strong competitive edge in high-growth sectors. It enables the creation of smaller, lighter, and more powerful electronic systems, driving innovation across multiple industries and offering a significant return on investment for those who leverage this patented approach.\n\n### What's Next?\nThis technology paves the way for a new generation of power electronics. We can expect to see devices built on this patent enabling even more compact and powerful consumer electronics, advanced medical devices, and sophisticated aerospace systems. As industries continue to push for greater energy efficiency and miniaturization, this invention will become a foundational building block. Companies investing in or licensing this technology now stand to benefit significantly as these markets mature, driving the next wave of electrification and smart power management globally.","technical_analysis":"The patent for the High-voltage Semiconductor Device and Method of Manufacturing the Same introduces a sophisticated architectural design aimed at enhancing the performance and manufacturability of high-voltage semiconductor devices. This technical deep dive will explore the underlying principles, structural components, and potential implications for power electronics engineers and designers.\n\n**Technical Architecture and Core Components:**\nAt the heart of this innovation is a meticulously engineered interplay between several key components:\n1.  **Substrate:** The foundational semiconductor material, typically silicon, upon which the device is built.\n2.  **Isolation Structure:** Embedded within the substrate, this structure is critical for electrically separating different regions of the device, particularly the high-voltage areas from control circuitry. Its presence is fundamental to defining voltage withstand capabilities.\n3.  **Gate Structure:** Disposed on the substrate, this is the control element, typically a polysilicon gate, responsible for modulating the conductivity of the device channel. The patent explicitly states that this gate structure is separated from the isolation structure by a specific distance, indicating a deliberate design choice for field management.\n4.  **Metal Electrode:** This is a crucial innovation. Positioned on the gate structure, this metal electrode is designed to extend *directly above* the isolation structure. This precise overlap is central to the invention's electric field control mechanism.\n5.  **Interconnection Structure (Lowest Metal Layer):** The device includes a broader interconnection scheme. The patent specifies that the metal electrode is situated *between* the lowest metal layer of this interconnection structure and the gate structure. This layering is vital for both electrical connectivity and further electric field shaping.\n\n**Implementation Details and Electric Field Management:**\nThe primary technical challenge in high-voltage devices is preventing premature electrical breakdown. This typically occurs when the electric field strength in a specific region exceeds the material's critical electric field, leading to avalanche breakdown. The High-voltage Semiconductor Device and Method of Manufacturing the Same addresses this by intelligently shaping the electric field distribution (EFD).\n\nBy extending the metal electrode over the isolation structure, the invention effectively creates a field plate. This field plate serves to spread the electric field lines emanating from the gate and drift regions, preventing their crowding at sharp corners or junctions, which are common points of high electric field stress in conventional designs. The strategic distance between the gate structure and the isolation structure, combined with the overlying metal electrode, creates a more uniform and distributed electric field profile. This reduces the peak electric field strength, allowing the device to withstand significantly higher voltages before breakdown.\n\nFurthermore, the precise placement of the metal electrode *between* the gate structure and the lowest metal layer of the interconnection structure suggests a sophisticated approach to utilizing multiple conductive layers for field termination and shielding. This multi-layer field plate effect can enhance the effectiveness of the isolation, leading to improved breakdown voltage characteristics without necessarily increasing the physical dimensions of the device's high-voltage section. The manufacturing method, though not fully detailed in the abstract, implies a process that allows for the precise alignment and deposition of these layers, which is crucial for achieving the desired electrical characteristics.\n\n**Performance Characteristics and Code-Level Implications:**\nDevices built upon this patent would exhibit:\n*   **Superior Breakdown Voltage:** The primary benefit, enabling operation at higher voltages with greater reliability.\n*   **Enhanced Power Density:** Achieving higher voltage ratings in a smaller footprint contributes directly to increased power density, critical for miniaturized power systems.\n*   **Potentially Lower On-Resistance (R_on,sp) for a Given BV:** By more effectively managing electric fields, designers might be able to optimize other device parameters (e.g., drift region doping) to reduce R_on,sp without compromising BV, leading to higher efficiency.\n*   **Improved Reliability:** Reduced peak electric fields minimize hot carrier effects and long-term degradation, improving device longevity.\n\nFrom a simulation and design perspective (e.g., TCAD tools), engineers would model the electric field distribution extensively to optimize the exact dimensions, doping profiles, and material properties of the isolation structure, gate, and metal electrode. The interaction between the various layers, including the lowest metal layer, would be critical in fine-tuning the field plates. The patent's method of manufacturing implies a process flow that can consistently create these precise structures, which is a non-trivial task in advanced semiconductor fabrication. This innovation offers a new set of design parameters for optimizing power device performance, pushing the boundaries of what's achievable in high-voltage integrated circuits.","business_analysis":"The High-voltage Semiconductor Device and Method of Manufacturing the Same patent represents a compelling business opportunity within the rapidly expanding power electronics market. This innovation directly addresses critical industry demands for higher efficiency, increased power density, and enhanced reliability in high-voltage applications, positioning it as a significant enabler for next-generation technologies.\n\n**Market Opportunity Size:** The global power electronics market is projected to grow substantially, driven by the electrification of transportation (electric vehicles, charging infrastructure), the proliferation of renewable energy systems (solar, wind), industrial automation, and the expansion of data centers. Each of these sectors relies heavily on high-voltage semiconductor devices for power conversion, control, and management. This patent, by offering superior performance characteristics, can capture a significant share of this multi-billion dollar market, particularly in high-growth segments where existing solutions face limitations in efficiency or form factor.\n\n**Competitive Advantages:**\n1.  **Superior Performance-to-Size Ratio:** The ability to achieve higher breakdown voltages within a more compact device footprint provides a distinct advantage over traditional designs. This translates to smaller, lighter, and more powerful end products, a key differentiator in competitive markets.\n2.  **Enhanced Reliability:** By optimizing electric field distribution, the invention reduces stress points within the device, leading to improved long-term reliability and reduced failure rates. This is a critical selling point in mission-critical applications where downtime is costly.\n3.  **Potential for Cost Reduction:** While initial R&D and tooling might be significant, the described manufacturing methods, if streamlined, could lead to higher manufacturing yields and lower per-unit costs compared to complex multi-step fabrication processes for achieving similar performance in prior art.\n4.  **Technological Leadership:** Adopting this patented technology allows companies to position themselves as leaders in advanced power electronics, attracting top talent and securing strategic partnerships.\n\n**Revenue Potential and Business Models:** Companies could generate revenue through:\n*   **Licensing:** Licensing the patent to major semiconductor manufacturers or integrated device manufacturers (IDMs) for use in their product lines.\n*   **Direct Manufacturing:** Developing and manufacturing high-voltage semiconductor devices based on this patent for sale to OEMs in target industries (EVs, renewable energy, industrial).\n*   **System Integration:** Offering integrated power modules or sub-systems that incorporate the patented device, providing a complete solution to customers.\n*   **Strategic Partnerships:** Collaborating with industry leaders to co-develop and co-market products, leveraging existing distribution channels and market access.\n\n**Strategic Positioning:** This patent allows for strategic positioning in segments demanding high-performance, compact power solutions. It enables differentiation in markets where efficiency and reliability are paramount. Companies can target premium segments in automotive (e.g., high-performance EVs, fast chargers), aerospace, and specialized industrial applications where the benefits of this invention translate directly into significant operational advantages for end-users. The innovation also supports a move towards more sustainable power solutions by improving energy conversion efficiency.\n\n**ROI Projections:** The return on investment for commercializing this technology is expected to be strong due to the large and growing target markets and the clear competitive advantages. Reduced product development cycles (due to a robust foundational patent), lower manufacturing costs, and increased market share in high-value segments would contribute to attractive ROI. Early adopters and licensors could see significant market gains by being first to market with superior power electronics components, driving down energy consumption and enabling more advanced system designs. The High-voltage Semiconductor Device and Method of Manufacturing the Same is a foundational IP asset with considerable potential to reshape the power electronics landscape.","faqs":[{"answer":"The High-voltage Semiconductor Device and Method of Manufacturing the Same is a patented invention (US-9853145) that introduces a novel design and fabrication process for high-voltage semiconductor devices. These devices are critical components in power electronics, responsible for controlling and converting high levels of electrical power in various applications.\n\nAt its core, this innovation focuses on improving the ability of semiconductor devices to withstand high voltages without breaking down, while simultaneously allowing for more compact and efficient designs. It achieves this through a unique architectural arrangement of its internal components, particularly how a metal electrode interacts with both the gate and isolation structures within the device.\n\nThis technology is designed to address long-standing challenges in power electronics, where there's a constant demand for devices that are smaller, more reliable, and more energy-efficient. The patent not only describes the physical structure of this advanced device but also outlines the methods to manufacture it effectively, ensuring its practical applicability in the industry.\n\nUltimately, it's a foundational technology poised to enhance the performance and reliability of power management systems across numerous sectors, from electric vehicles to renewable energy infrastructure. Keywords: high-voltage semiconductor, power electronics, patent US-9853145, device architecture, semiconductor innovation.","question":"What is High-voltage Semiconductor Device and Method of Manufacturing the Same?"},{"answer":"The High-voltage Semiconductor Device and Method of Manufacturing the Same operates on the principle of optimized electric field management. In high-voltage devices, the main challenge is preventing electrical breakdown caused by concentrated electric fields.\n\nThis invention's mechanism involves a precise arrangement of a substrate, an isolation structure embedded within the substrate, and a gate structure disposed on the substrate. The key lies in a metal electrode that is placed on the gate structure and, crucially, extends directly over the isolation structure. This strategic overlap acts as a sophisticated field plate.\n\nBy extending the metal electrode over the isolation structure, it helps to smoothly distribute the electric field lines across a wider area, preventing them from crowding at sharp points or junctions where breakdown typically occurs. This intelligent field shaping allows the device to withstand significantly higher voltages more reliably. Furthermore, the patent notes that this metal electrode is positioned between the gate structure and the lowest metal layer of the interconnection structure, suggesting a multi-layered approach to further enhance field control and shielding.\n\nThis clever design ensures that the electrical stress is evenly managed throughout the device, leading to improved breakdown voltage and overall reliability, often within a more compact physical footprint than conventional designs. Keywords: electric field management, breakdown voltage, device operation, semiconductor design, metal electrode, isolation structure.","question":"How does High-voltage Semiconductor Device and Method of Manufacturing the Same work?"},{"answer":"The High-voltage Semiconductor Device and Method of Manufacturing the Same patent primarily solves the persistent problem of achieving high breakdown voltage and reliability in semiconductor devices without compromising on device compactness, efficiency, or manufacturing complexity.\n\nHistorically, designing high-voltage power devices has involved significant trade-offs. To prevent electrical breakdown, traditional designs often required larger physical separations between components or highly intricate and expensive fabrication processes. These limitations resulted in devices that were either too bulky for modern miniaturized electronics, too costly to produce on a large scale, or less efficient due to increased parasitic effects.\n\nThis invention addresses these issues by providing a novel architectural solution that optimizes electric field distribution within the device. By preventing electric field crowding, it allows for higher voltage handling capabilities and improved reliability in a more space-efficient manner. It streamlines the design for high-voltage isolation, reducing the need for extensive chip area or overly complex manufacturing steps.\n\nIn essence, the patent enables the creation of high-performance, high-voltage semiconductor devices that are smaller, more reliable, and potentially more cost-effective to produce, thereby removing a significant bottleneck in the advancement of power electronics. Keywords: power electronics challenges, breakdown voltage problem, device miniaturization, manufacturing complexity, reliability issues, electric field crowding.","question":"What problem does High-voltage Semiconductor Device and Method of Manufacturing the Same solve?"},{"answer":"The patent data provided does not specify the names of the inventors or the assignee for the High-voltage Semiconductor Device and Method of Manufacturing the Same (US-9853145). Often, patent applications are filed by corporate entities, and the specific inventors are listed in the full patent document but not always in summarized public databases.\n\nIn the context of patent filings, the inventors are the individuals who conceived the inventive subject matter, while the assignee is the entity (e.g., a company or university) to whom the patent rights are typically assigned. The development of such sophisticated semiconductor technology usually involves a team of highly skilled engineers and researchers working within a leading technology company or academic institution.\n\nWithout the specific inventor and assignee information, it's not possible to name the individuals or organization directly responsible for this groundbreaking work. However, the innovation itself speaks to the expertise and foresight of those involved in advancing power electronics. Keywords: patent inventors, assignee, semiconductor research, technology development, patent ownership, US-9853145.","question":"Who invented High-voltage Semiconductor Device and Method of Manufacturing the Same?"},{"answer":"The High-voltage Semiconductor Device and Method of Manufacturing the Same offers several significant benefits that are poised to impact the power electronics industry:\n\nFirstly, it provides **enhanced breakdown voltage (BV)** capabilities. By intelligently shaping the electric field within the device, it reduces the risk of electrical breakdown, allowing the device to safely handle higher voltages. This directly translates to more robust and reliable power systems.\n\nSecondly, it contributes to **improved power density and compactness**. The ability to achieve higher BV in a more efficient manner means that devices can be made smaller without sacrificing performance. This is crucial for miniaturization trends in electronics, leading to more compact end products like electric vehicles, portable chargers, and industrial equipment.\n\nThirdly, it promises **greater reliability and longevity**. By mitigating localized electric field stress, the device experiences less wear and tear, reducing the likelihood of premature failure and extending its operational lifespan. This is particularly valuable in mission-critical applications where downtime is costly.\n\nFinally, the patent also outlines **efficient methods of manufacturing**, suggesting that these advanced devices can be produced more cost-effectively and with higher yields compared to some complex prior art solutions. These combined benefits make this innovation a powerful enabler for next-generation power electronics. Keywords: high-voltage benefits, power density, device reliability, compact design, manufacturing efficiency, semiconductor performance.","question":"What are the key benefits of High-voltage Semiconductor Device and Method of Manufacturing the Same?"},{"answer":"The High-voltage Semiconductor Device and Method of Manufacturing the Same distinguishes itself from prior art through its unique and integrated approach to electric field management within the device architecture.\n\nTraditional high-voltage semiconductor designs often rely on discrete or less integrated techniques like conventional field plates, guard rings, or deep trench isolation. While these methods provide some level of electric field control, they frequently come with trade-offs such as increased device area, complex multi-step manufacturing processes, or suboptimal electric field distribution, leading to limitations in breakdown voltage or efficiency.\n\nThis patent's key differentiation lies in the strategic placement of a metal electrode that is disposed on the gate structure and, crucially, extends directly over an embedded isolation structure. This integrated design creates a highly effective and precisely controlled field plate effect. Furthermore, the metal electrode's specific positioning between the gate structure and the lowest metal layer of the interconnection structure represents a more sophisticated, multi-layered approach to field shaping, providing superior control over potential lines and electric field spread.\n\nThis integrated and optimized architecture allows for more uniform electric field distribution, achieving higher breakdown voltages and greater reliability in a potentially smaller footprint, and possibly with more streamlined manufacturing, compared to the less integrated or more area-intensive solutions found in prior art. Keywords: prior art comparison, semiconductor differentiation, electric field shaping, integrated design, field plate innovation, manufacturing advantage.","question":"How is High-voltage Semiconductor Device and Method of Manufacturing the Same different from prior art?"},{"answer":"The High-voltage Semiconductor Device and Method of Manufacturing the Same is set to have a profound impact across a wide array of industries that rely on efficient and reliable power management, particularly those involving high-voltage applications.\n\n**Electric Vehicles (EVs) and Automotive:** This technology can enable more compact, efficient, and robust power converters, inverters, and charging systems for electric vehicles. This will contribute to longer battery ranges, faster charging times, and lighter vehicle designs, accelerating EV adoption.\n\n**Renewable Energy:** For solar power (inverters) and wind energy (converters), the innovation can lead to more efficient and reliable power electronics, enhancing energy harvesting, improving grid integration, and reducing overall system costs.\n\n**Industrial Automation and Power Supplies:** Industrial motor drives, factory automation equipment, and high-power industrial rectifiers can benefit from smaller, more durable, and energy-efficient power components, leading to increased productivity and reduced operational expenses.\n\n**Data Centers and Telecommunications:** With the ever-growing demand for computing power, data centers require highly efficient and reliable power distribution units and server power supplies. This technology can help reduce energy consumption and the physical footprint of power infrastructure.\n\n**Consumer Electronics:** Even high-power consumer devices like laptops, gaming consoles, and fast chargers can see benefits in terms of smaller form factors, improved thermal management, and enhanced efficiency. This patent is a foundational technology that will fuel advancements in all sectors requiring cutting-edge power electronics. Keywords: industry impact, electric vehicles, renewable energy, industrial automation, data centers, consumer electronics, power management applications.","question":"What industries will High-voltage Semiconductor Device and Method of Manufacturing the Same impact?"},{"answer":"The patent for the High-voltage Semiconductor Device and Method of Manufacturing the Same (US-9853145) was filed on **October 4, 2016**. This date marks when the application was formally submitted to the patent office, initiating the examination process.\n\nThe patent was subsequently published on **December 26, 2017**. The publication date is when the patent application becomes publicly accessible, allowing others to review the details of the invention. While the prompt provides a publication date, it does not explicitly state the grant date. Typically, the publication date refers to the date the application was made public, which often precedes the actual grant date of the patent.\n\nThese dates are crucial for understanding the intellectual property timeline. The filing date establishes the priority date for the invention, meaning any subsequent similar inventions would need to demonstrate an earlier conception date to challenge its novelty. The publication date makes the technology known, influencing further research and development in the field of high-voltage semiconductors. Keywords: patent filing date, publication date, patent timeline, US-9853145, intellectual property, semiconductor patent.","question":"When was High-voltage Semiconductor Device and Method of Manufacturing the Same filed/granted?"},{"answer":"The commercial applications of the High-voltage Semiconductor Device and Method of Manufacturing the Same are extensive and span multiple high-growth technology sectors, driven by its ability to deliver superior performance in power management.\n\nIn the **automotive industry**, particularly for electric vehicles (EVs), this technology can be integrated into power inverters, DC-DC converters, and onboard chargers. This leads to more efficient powertrains, enabling longer driving ranges, faster battery charging, and lighter, more compact vehicle designs, which are critical for consumer adoption.\n\nFor **renewable energy systems**, such as solar photovoltaic installations and wind turbines, the invention can be used in grid-tie inverters and power converters. This improves the efficiency and reliability of converting generated energy into usable electricity, enhancing the overall performance and economic viability of clean energy solutions.\n\nIn **industrial power applications**, the device can be implemented in motor drives, uninterruptible power supplies (UPS), and switch-mode power supplies. These applications demand robust, efficient, and often compact power solutions, which this patent can provide, leading to energy savings and reduced equipment footprint.\n\nFurthermore, **data centers and cloud infrastructure** can benefit from more efficient power delivery units and server power supplies, reducing significant operational costs associated with energy consumption and cooling. The enhanced reliability also minimizes downtime. Essentially, any application requiring high-voltage power conversion or control, where efficiency, size, and reliability are paramount, represents a prime commercial opportunity for this innovative semiconductor device. Keywords: commercial applications, electric vehicles, renewable energy, industrial power, data centers, power converters, market opportunities.","question":"What are the commercial applications of High-voltage Semiconductor Device and Method of Manufacturing the Same?"},{"answer":"The High-voltage Semiconductor Device and Method of Manufacturing the Same lays a foundational architectural principle that is expected to drive several future developments in power electronics.\n\nOne key area is its **integration with Wide Bandgap (WBG) semiconductor materials** like Silicon Carbide (SiC) and Gallium Nitride (GaN). These materials inherently offer superior performance at high voltages and temperatures. Combining the innovative electric field management of this patent with WBG materials could unlock unprecedented levels of efficiency, power density, and operational frequency, pushing the boundaries of what's currently achievable.\n\nAnother development will be **further optimization through advanced simulation and AI**. As computational power increases, sophisticated TCAD (Technology Computer-Aided Design) simulations and AI-driven design tools will be used to fine-tune the geometry, material properties, and doping profiles of the isolation structure, gate, and metal electrode. This will lead to even greater performance enhancements and tailored solutions for specific applications.\n\nWe can also anticipate **miniaturization and system integration advancements**. The architectural efficiency of this patent will enable the creation of highly compact power modules and potentially lead to more integrated power-on-chip solutions. This will facilitate the development of smaller, lighter, and more complex electronic systems across all impacted industries.\n\nFinally, **new application frontiers** are likely to emerge. As high-voltage power management becomes more efficient and compact, it could enable technologies currently limited by power constraints, such as advanced robotics, specialized medical devices, or even new forms of energy harvesting and storage. This patent is a catalyst for the next generation of power electronics innovation. Keywords: future developments, Wide Bandgap materials, SiC, GaN, TCAD simulation, AI design, miniaturization, system integration, new applications.","question":"What are the future developments expected for High-voltage Semiconductor Device and Method of Manufacturing the Same?"}],"topics":["high-voltage semiconductor","power electronics","semiconductor manufacturing","device architecture","breakdown voltage","evolution","power","electronics"],"tech_cluster":null},"seo":{"title":"High-voltage Semiconductor Device & Method - Patent US-9853145","description":"Discover the High-voltage Semiconductor Device and Method of Manufacturing the Same. This patent revolutionizes power electronics with enhanced breakdown voltage and compact design. Explore its innovation.","keywords":["high-voltage semiconductor","power electronics","semiconductor manufacturing","device architecture","breakdown voltage","electric field management","patent US-9853145","power device innovation","compact power electronics","semiconductor isolation","gate structure","metal electrode","power density","electronic components"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853145","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853145","citation_suggestion":"Patentable. \"High-voltage semiconductor device and method of manufacturing the same\" (US-9853145). https://patentable.app/patents/US-9853145","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853145","json":"https://patentable.app/api/llm-context/US-9853145","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:50:58.214Z"}