{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853147","patent":{"patent_number":"US-9853147","title":"High voltage MOSFET devices and methods of making the devices","assignee":null,"inventors":[],"filing_date":"2015-12-09T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":16,"abstract":"A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described."},"analysis":{"summary":"The High Voltage Mosfet Devices and Methods of Making the Devices patent (US-9853147) introduces a significant advancement in Silicon Carbide (SiC) MOSFET technology, specifically designed to achieve exceptionally low specific on-resistance. This innovation is crucial for power electronics applications that demand high efficiency and reliability, such as electric vehicles, renewable energy systems, and industrial power supplies.\n\nThe core of this invention lies in its unique device architecture. It features N+, P-well, and JFET regions that are extended predominantly in one direction (the Y-direction), while the P+ and source contacts are extended in an orthogonal direction (the X-direction). This anisotropic layout is fundamental to its performance. A key design element is the polysilicon gate, which covers the JFET region and is strategically terminated over the P-well region. This precise termination minimizes the electric field at the gate edge, a common point of stress and potential failure in high-voltage devices, thereby enhancing reliability.\n\nOperationally, the current flow within the device is highly optimized. Current initiates vertically from the drain, proceeds into the JFET region, then transitions to a lateral flow in the X-direction through an accumulation region and the MOSFET channels. Finally, it enters an adjacent N+ region and flows along it in the Y-direction to be collected by the source contacts. This multi-directional, engineered current path is instrumental in reducing the device's specific on-resistance, leading to lower power losses and improved energy efficiency.\n\nThe patent also details the methods of making these devices, ensuring that this complex and high-performance structure can be reliably manufactured. This technology offers substantial business value by enabling more compact, efficient, and robust power conversion systems. It addresses a critical market need for high-performance power semiconductors, opening up significant opportunities in sectors driven by electrification and energy conservation.","layman_explanation":"## Unlocking Efficiency: A Layman's Guide to High Voltage Mosfet Devices and Methods of Making the Devices\n\nIn today's world, everything is becoming more electric, from our cars to our homes and even entire energy grids. At the heart of all these electrical systems are tiny but crucial components called power switches, or MOSFETs. These switches turn electricity on and off incredibly fast, enabling everything from charging your phone to powering an electric vehicle. The challenge has always been making these switches more efficient – meaning they waste less energy as heat – especially when dealing with high voltages.\n\n### What Problem Does This Solve?\n\nThink of electricity flowing through a wire like water flowing through a pipe. When the pipe is narrow or has lots of turns, the water meets resistance, and some energy is lost as friction or heat. Similarly, in traditional high-voltage power switches, electricity encounters 'on-resistance.' This resistance causes a significant amount of the energy to be wasted as heat, which is inefficient and can even damage the device over time. This problem limits how powerful, compact, and reliable we can make electronic systems, particularly in demanding applications like electric vehicles, where every bit of battery power counts, or in large solar installations, where maximizing energy capture is key. Existing solutions often involve trade-offs: either you get high voltage handling but high resistance, or low resistance but limited voltage capability.\n\n### How Does It Work?\n\nThe High Voltage Mosfet Devices and Methods of Making the Devices patent introduces a brilliant new design for these power switches, specifically using Silicon Carbide (SiC), a material known for its superior electrical properties. Instead of a simple, straightforward path for electricity, this invention creates a sophisticated 'highway system' within the tiny chip.\n\nImagine a city where the main roads (N+, P-well, JFET regions) run North-South. But the entry and exit ramps (P+ and source contacts) are cleverly designed to run East-West, making traffic flow much smoother and faster. This criss-cross, or 'anisotropic,' arrangement of internal components is key. Additionally, there's a special 'traffic controller' (the polysilicon gate) that manages the flow. This controller is strategically positioned so that at its most critical points – where traffic jams typically occur and cause 'heat' – the electric stress is minimized. It's like making sure the on-ramps and off-ramps are perfectly angled to prevent bottlenecks.\n\nWhen the switch is on, electricity (our 'traffic') flows vertically from the bottom of the chip, then makes a controlled turn to flow laterally (sideways) through specific channels, and finally flows along another path to exit the device. This multi-directional, optimized flow ensures that the electricity encounters minimal resistance throughout its journey. Less resistance means significantly less energy is converted into wasted heat, making the switch much more efficient.\n\n### Why Does This Matter?\n\nThis innovation is a game-changer for several high-growth industries. For **electric vehicles**, it means longer battery ranges, faster charging, and more compact power electronics, leading to lighter cars and better performance. In **renewable energy** systems like solar inverters, higher efficiency translates directly into more electricity generated from the same amount of sunlight, boosting profitability and sustainability. For **industrial power supplies** and **data centers**, it means lower operational costs due to reduced energy consumption and more reliable equipment that requires less maintenance.\n\nEssentially, this patent provides a foundational technology that allows us to build more powerful, more efficient, and more reliable electronic systems across the board. It gives companies a significant competitive advantage by enabling them to offer products that perform better and cost less to operate over their lifetime. The market impact is substantial, as it addresses a fundamental need in a world increasingly reliant on efficient electrical power.\n\n### What's Next?\n\nThe High Voltage Mosfet Devices and Methods of Making the Devices technology is primed for widespread adoption. We can expect to see it integrated into next-generation power modules from leading semiconductor manufacturers. Its principles could also inspire further research into even more advanced device architectures. For investors, this represents a strong opportunity in the power semiconductor space, as the demand for high-performance SiC devices will only continue to accelerate with global electrification trends. This patent helps solidify a path towards a more energy-efficient and sustainable future.","technical_analysis":"The patent High Voltage Mosfet Devices and Methods of Making the Devices (US-9853147) details a sophisticated Silicon Carbide (SiC) MOSFET architecture and fabrication methodology aimed at significantly reducing specific on-resistance (R_on,sp) while maintaining high breakdown voltage capabilities. This technical analysis delves into the core design principles, current flow dynamics, and potential implications for power semiconductor engineering.\n\n**Technical Architecture and Device Geometry:**\nThe device described is a SiC MOSFET characterized by a unique anisotropic layout. Key regions are oriented along specific axes:\n*   **N+, P-well, and JFET Regions:** These critical regions, responsible for channel formation and voltage blocking, are extended predominantly in a 'Y-direction'. This orientation is crucial for establishing the primary conduction path and electric field distribution.\n*   **P+ and Source Contacts:** In contrast, the P+ body regions and the associated source contacts are extended in an 'X-direction', orthogonal to the N+, P-well, and JFET regions. This orthogonal arrangement facilitates efficient current collection and optimizes the channel width.\n*   **Polysilicon Gate:** The polysilicon gate is designed to cover the JFET region. A critical innovation lies in its termination: the gate is purposefully terminated over the P-well region. This specific termination strategy is engineered to minimize electric field crowding at the gate edge. In high-voltage devices, electric field peaks at gate edges are significant reliability concerns, potentially leading to gate oxide breakdown or hot-carrier degradation. By mitigating this, the patent enhances device robustness.\n\n**Implementation Details and Current Flow Dynamics:**\nThe operational principle of the device is centered around an optimized, multi-directional current flow path:\n1.  **Vertical Injection:** Current enters the device vertically from the drain contact located at the bottom of the SiC substrate.\n2.  **JFET Region Conduction:** It then flows into the JFET (Junction Field Effect Transistor) region. The JFET region plays a dual role: it provides a low-resistance path when the device is ON and contributes to voltage blocking when OFF. Its geometry and doping are critical for modulating the device's overall resistance.\n3.  **Lateral Channel Conduction (X-direction):** From the JFET region, the current transitions to a lateral flow in the X-direction. This lateral path involves an accumulation region (formed under the gate when biased) and the MOSFET channels. The channel length and width, determined by the orthogonal layout, are optimized to minimize channel resistance.\n4.  **N+ Region and Source Collection (Y-direction):** After passing through the MOSFET channels, the current flows into an adjacent N+ region. This N+ region is extended in the Y-direction, providing an efficient, low-resistance conduit. Finally, the current is collected by the source contacts, which are also oriented in the X-direction, and then routed to the final metal layer.\n\nThis intricate current path, leveraging both vertical and lateral components, is engineered to minimize the total series resistance, thereby achieving a low specific on-resistance. The orthogonal alignment of regions allows for independent optimization of channel width (X-direction) and drift path length (Y-direction), which is a significant advantage over purely vertical or less complex hybrid designs.\n\n**Performance Characteristics and Code-Level Implications:**\nThe primary performance characteristic improved by this invention is the specific on-resistance. Lower R_on,sp directly translates to reduced conduction losses (P_loss = I^2 * R_on) and thus higher power conversion efficiency. This also leads to lower junction temperatures, improving device reliability and potentially reducing heatsink requirements. For circuit designers and embedded engineers, this means:\n*   **Thermal Management:** Simpler and smaller thermal solutions, reducing overall system size, weight, and cost.\n*   **Switching Frequency:** While the patent primarily addresses conduction losses, improved thermal stability can enable higher switching frequencies without exceeding thermal limits.\n*   **System Efficiency:** Direct improvement in overall system efficiency for applications like DC-DC converters, inverters, and motor drives.\n\n**Integration Patterns:**\nThis SiC MOSFET device would integrate into power modules as a direct replacement for existing SiC or even advanced Si MOSFETs. Its improved performance would allow for:\n*   **Higher Power Density Modules:** Packing more power into smaller module footprints.\n*   **Simplified Gate Drive Circuits:** While not directly addressed, the optimized gate edge field could lead to more robust operation with standard gate drivers.\n*   **Enhanced Reliability in Harsh Environments:** Critical for automotive, aerospace, and industrial applications where thermal cycling and high-voltage stress are common.\n\nIn summary, the High Voltage Mosfet Devices and Methods of Making the Devices patent presents a technically sophisticated solution to a fundamental problem in power semiconductor design. Its innovative device geometry, optimized current flow, and electric field management offer a compelling path to ultra-efficient and reliable SiC MOSFETs, driving progress in high-power, high-frequency applications.","business_analysis":"The High Voltage Mosfet Devices and Methods of Making the Devices patent (US-9853147) represents a substantial commercial opportunity within the rapidly expanding power electronics market, particularly for Silicon Carbide (SiC) devices. This innovation directly addresses critical market demands for higher efficiency, greater power density, and enhanced reliability in high-voltage applications.\n\n**Market Opportunity Size:**\nThe global power semiconductor market is projected to reach tens of billions of dollars, with SiC devices being a major growth driver. The SiC power device market alone is anticipated to grow at a CAGR exceeding 20% over the next decade, fueled by electrification trends in automotive, renewable energy, and industrial sectors. This patent targets the core of this growth by offering a superior SiC MOSFET, a foundational component in these applications. The market for high-voltage (e.g., 600V-1700V and beyond) power switches is particularly lucrative, and this invention's focus on low specific on-resistance positions it perfectly to capture significant market share.\n\n**Competitive Advantages:**\nThe primary competitive advantage of this technology is its **significantly reduced specific on-resistance**. Lower on-resistance directly translates to:\n1.  **Higher Energy Efficiency:** Products incorporating this device will waste less energy as heat, leading to lower operating costs for end-users and improved environmental footprints.\n2.  **Improved Thermal Management:** Less heat generation means smaller, lighter, and less expensive cooling systems, reducing system complexity and bill-of-materials (BOM).\n3.  **Enhanced Reliability and Lifespan:** The optimized electric field termination at the gate edge directly addresses a common failure mode in high-voltage MOSFETs, leading to more robust and longer-lasting devices.\n4.  **Higher Power Density:** The combination of efficiency and reliability allows for more compact power modules, critical for space-constrained applications like electric vehicles.\n\nThese advantages provide a strong differentiation against both traditional silicon-based IGBTs and existing SiC MOSFETs that may not achieve the same level of R_on,sp optimization or gate-edge reliability.\n\n**Revenue Potential:**\nRevenue generation could stem from several avenues:\n*   **Licensing:** Patent licensing to major semiconductor manufacturers (e.g., Infineon, Wolfspeed, STMicroelectronics, ON Semiconductor) for integration into their SiC product portfolios.\n*   **Direct Manufacturing:** Establishing a fabless or integrated device manufacturer (IDM) to produce and sell these devices as discrete components or integrated modules.\n*   **Joint Ventures/Partnerships:** Collaborating with system integrators or OEMs in target industries (automotive, energy) to develop application-specific solutions.\nGiven the high-volume demand in target markets, even a small percentage of market share could translate into hundreds of millions or billions in revenue over time, especially with premium pricing justified by superior performance.\n\n**Business Models:**\n*   **IP Licensing:** A high-margin business model, focusing on R&D and intellectual property protection.\n*   **Component Sales:** Selling SiC MOSFET dies or packaged devices to power module manufacturers.\n*   **Module Sales:** Developing and selling complete power modules (e.g., half-bridge, full-bridge) that leverage this technology.\n*   **System Solutions:** Partnering to provide full power conversion system designs incorporating these devices.\n\n**Strategic Positioning:**\nThis patent allows for strategic positioning as a leader in high-performance SiC power semiconductors. By enabling devices with superior efficiency and reliability, it addresses pain points across multiple industries. It can help companies gain a competitive edge by offering products with lower total cost of ownership (TCO), improved performance, and reduced environmental impact. The innovation strengthens a company's portfolio in key growth areas like electromobility and renewable energy, aligning with global sustainability initiatives.\n\n**ROI Projections:**\nInvestment in developing or licensing this technology would yield significant ROI through:\n*   **Market Share Gain:** Capturing a larger portion of the growing SiC market.\n*   **Premium Pricing:** Justifying higher prices due to superior performance characteristics.\n*   **Reduced R&D Costs for Future Generations:** The foundational nature of this architectural improvement can accelerate future product development cycles.\n*   **Long-term Competitive Moat:** Strong patent protection creates a barrier to entry for competitors, securing long-term market advantage.\n\nIn conclusion, the High Voltage Mosfet Devices and Methods of Making the Devices patent offers a robust business case, poised to deliver substantial returns by addressing critical performance gaps in the burgeoning SiC power electronics industry.","faqs":[{"answer":"The High Voltage Mosfet Devices and Methods of Making the Devices patent (US-9853147) describes a groundbreaking Silicon Carbide (SiC) MOSFET device designed for high-voltage applications. At its core, this innovation focuses on achieving exceptionally low specific on-resistance, a critical parameter for power efficiency, while maintaining high reliability.\n\nThis device is not just another incremental improvement; it features a unique internal architecture. Key regions like the N+, P-well, and JFET are extended in one direction (Y-direction), while the P+ and source contacts are oriented orthogonally (X-direction). This anisotropic layout is fundamental to how the device manages electricity flow and optimizes performance.\n\nFurthermore, a key aspect of the High Voltage Mosfet Devices and Methods of Making the Devices is the strategic placement of its polysilicon gate. This gate covers the JFET region and is precisely terminated over the P-well region. This specific design choice is crucial for minimizing electric field concentrations at the gate edge, which are common points of stress and failure in high-voltage power devices. By addressing this, the patent significantly enhances the device's robustness and operational lifespan. This patented technology represents a significant leap forward in power semiconductor design, addressing critical needs in high-efficiency power conversion. \n\nKeywords: SiC MOSFET, high voltage device, low on-resistance, power electronics, semiconductor architecture.","question":"What is High Voltage Mosfet Devices and Methods of Making the Devices?"},{"answer":"The High Voltage Mosfet Devices and Methods of Making the Devices operates on an ingeniously optimized multi-directional current flow principle, coupled with a unique structural design. When the device is switched on, current begins its journey vertically from the drain contact, located at the bottom of the SiC structure.\n\nFrom the vertical drain path, the current then flows into the JFET (Junction Field Effect Transistor) region. This region is critical for modulating the device's resistance and contributes to voltage blocking. After passing through the JFET, the current transitions to a lateral flow: it moves in the X-direction through an accumulation region and then through the MOSFET channels. These channels are the primary 'gate-controlled' paths for current.\n\nFinally, the current enters an adjacent N+ region, which is extended in the Y-direction. It flows along this N+ region and is efficiently collected by the source contacts, which are oriented in the X-direction, and then routed to the final metal layer. This intricate vertical-then-lateral-then-longitudinal current path is meticulously engineered to ensure that electricity encounters minimal resistance throughout its journey, leading to the device's exceptionally low specific on-resistance. The strategic placement of the polysilicon gate, terminating over the P-well, further ensures that electric fields are managed effectively, preventing localized stress and enhancing overall device reliability. This combination of structural and operational optimization is what makes the High Voltage Mosfet Devices and Methods of Making the Devices so efficient.\n\nKeywords: MOSFET operation, current flow, SiC device physics, JFET region, gate termination, power efficiency.","question":"How does High Voltage Mosfet Devices and Methods of Making the Devices work?"},{"answer":"The High Voltage Mosfet Devices and Methods of Making the Devices patent primarily solves the long-standing problem of achieving both ultra-low specific on-resistance and robust high-voltage reliability in power semiconductors, particularly SiC MOSFETs. In traditional designs, these two critical performance metrics often involve a trade-off: optimizing for one typically compromises the other.\n\nHigh specific on-resistance leads to significant power losses in the form of heat during operation. This wasted energy reduces overall system efficiency, increases operational costs, and necessitates larger, more expensive cooling systems. For applications like electric vehicles, this translates to shorter battery ranges and heavier components. For renewable energy systems, it means less power generated from the same source.\n\nAdditionally, existing high-voltage MOSFETs often suffer from electric field crowding at critical junctions, especially at the polysilicon gate edge. These high-field regions are prone to premature gate oxide breakdown, increased leakage currents, and general device degradation, severely impacting long-term reliability and operational lifespan. The High Voltage Mosfet Devices and Methods of Making the Devices directly addresses these issues through its innovative anisotropic architecture and precise gate termination, offering a device that is both highly efficient and exceptionally reliable. This breakthrough is crucial for the continued advancement of power electronics in demanding applications.\n\nKeywords: on-resistance problem, high voltage reliability, power loss, electric field crowding, SiC challenges, energy efficiency.","question":"What problem does High Voltage Mosfet Devices and Methods of Making the Devices solve?"},{"answer":"The provided patent data for US-9853147, titled 'High Voltage Mosfet Devices and Methods of Making the Devices,' does not specify the names of the inventors or the assignee. Patent filings typically list inventors who are individuals responsible for conceiving the invention, and an assignee, which is often the company or organization to whom the patent rights have been legally assigned.\n\nWithout this information in the provided abstract, it's not possible to identify the specific individuals or entity behind the creation of the High Voltage Mosfet Devices and Methods of Making the Devices. However, the nature of such a sophisticated SiC MOSFET innovation suggests it likely originated from a leading semiconductor research and development team, either within a major power electronics company or a specialized research institution, dedicated to advancing wide bandgap semiconductor technology.\n\nFurther details regarding the inventors and assignee would typically be found in the full patent document available through official patent databases. These details are crucial for understanding the intellectual property landscape and the origins of this significant contribution to power semiconductor technology. The High Voltage Mosfet Devices and Methods of Making the Devices stands as a testament to collaborative engineering efforts in the semiconductor industry.\n\nKeywords: patent inventors, assignee, US-9853147, SiC MOSFET development, intellectual property, semiconductor research.","question":"Who invented High Voltage Mosfet Devices and Methods of Making the Devices?"},{"answer":"The High Voltage Mosfet Devices and Methods of Making the Devices patent offers several transformative benefits that position it as a critical advancement in power electronics. Firstly, and most significantly, it achieves **exceptionally low specific on-resistance**. This directly translates into vastly improved energy efficiency for any system utilizing these devices, as less energy is wasted as heat during operation. For electric vehicles, this means extended battery range; for renewable energy systems, higher power conversion efficiency; and for industrial applications, reduced operational costs.\n\nSecondly, the innovation provides **enhanced reliability and robustness**. The precise termination of the polysilicon gate over the P-well region is engineered to minimize electric field crowding at the gate edge. This addresses a common point of failure in high-voltage MOSFETs, leading to devices that are more durable, have a longer operational lifespan, and can withstand more demanding operating conditions without degradation. This improved reliability is a major advantage for mission-critical applications.\n\nThirdly, the reduced power losses result in **superior thermal performance**. Less heat generation simplifies thermal management requirements, allowing for smaller, lighter, and potentially less expensive cooling systems. This is crucial for achieving higher power densities, enabling more compact electronic designs. Overall, the High Voltage Mosfet Devices and Methods of Making the Devices delivers a powerful combination of efficiency, durability, and compactness, making it highly desirable across a broad spectrum of high-voltage power conversion applications.\n\nKeywords: SiC MOSFET benefits, low on-resistance, enhanced reliability, energy efficiency, thermal management, power density.","question":"What are the key benefits of High Voltage Mosfet Devices and Methods of Making the Devices?"},{"answer":"The High Voltage Mosfet Devices and Methods of Making the Devices distinguishes itself from prior art SiC MOSFETs through its innovative anisotropic device architecture and a sophisticated approach to electric field management. Traditional SiC MOSFET designs, whether planar or trench-based, often struggle with a fundamental trade-off: improving specific on-resistance typically compromises breakdown voltage or introduces reliability issues at high electric fields.\n\nPrior art trench MOSFETs, for instance, might offer lower on-resistance through vertical channels but can suffer from high electric field concentrations at trench corners, leading to gate oxide stress. Planar devices, while simpler, often have higher on-resistance. Superjunction (SJ) devices achieve very low on-resistance but are incredibly complex to fabricate and sensitive to charge balance.\n\nIn contrast, the High Voltage Mosfet Devices and Methods of Making the Devices employs a unique layout where key regions (N+, P-well, JFET) are extended in one direction (Y), while contacts (P+, source) are orthogonal (X). This anisotropic design enables a multi-directional current flow path (vertical, then lateral, then longitudinal) that is highly optimized to minimize series resistance, leading to superior on-resistance without sacrificing breakdown voltage. Furthermore, its strategic polysilicon gate termination over the P-well region actively mitigates electric field crowding at the gate edge, a critical reliability enhancement that many prior art devices address less effectively or with greater complexity. This integrated approach to optimizing both current flow and electric field distribution sets the High Voltage Mosfet Devices and Methods of Making the Devices apart.\n\nKeywords: SiC MOSFET prior art, anisotropic design, gate edge field, on-resistance comparison, device architecture, trench vs planar, reliability improvement.","question":"How is High Voltage Mosfet Devices and Methods of Making the Devices different from prior art?"},{"answer":"The High Voltage Mosfet Devices and Methods of Making the Devices patent is poised to have a profound impact across several high-growth industries that rely heavily on efficient and reliable power conversion. Its core benefits—exceptionally low specific on-resistance and enhanced reliability—are directly applicable to sectors undergoing rapid electrification and demanding higher performance from their power electronics.\n\n**Electric Vehicles (EVs):** This is a primary impact area. The technology can lead to more efficient EV powertrains, resulting in longer battery ranges, faster charging capabilities, and lighter, more compact on-board chargers and inverters. This will accelerate the adoption and improve the performance of electric cars, trucks, and buses.\n\n**Renewable Energy:** Solar inverters, wind turbine converters, and grid-tied energy storage systems will benefit from higher conversion efficiencies. This means more usable electricity generated from renewable sources, making green energy more cost-effective and contributing to grid stability and modernization.\n\n**Industrial Power and Motor Drives:** Industrial machinery, robotics, and high-power motor drives will see reduced energy consumption, lower operating costs, and increased reliability. The ability to manage heat more effectively will also lead to more robust and compact industrial equipment.\n\n**Data Centers and Telecommunications:** With massive power demands, data centers can achieve significant energy savings and reduced cooling infrastructure requirements, leading to lower environmental impact and operational expenses. Telecom infrastructure will also benefit from more efficient power supplies.\n\nIn essence, any industry requiring high-voltage, high-efficiency power conversion will find the High Voltage Mosfet Devices and Methods of Making the Devices to be a transformative technology, driving innovation and sustainability across the board.\n\nKeywords: industry impact, electric vehicles, renewable energy, industrial power, data centers, SiC applications, power conversion.","question":"What industries will High Voltage Mosfet Devices and Methods of Making the Devices impact?"},{"answer":"The High Voltage Mosfet Devices and Methods of Making the Devices patent, identified as US-9853147, has specific dates associated with its filing and publication, which are crucial milestones in its intellectual property journey.\n\nAccording to the provided data, the **filing date** for this patent was **2015-12-09**. The filing date is when the patent application was officially submitted to the patent office, establishing the priority date for the invention. This date is significant as it sets the earliest claim to the invention's novelty.\n\nSubsequently, the **publication date** for the High Voltage Mosfet Devices and Methods of Making the Devices patent was **2017-12-26**. The publication date is when the patent office publicly releases the details of the patent application. This makes the invention's technical information accessible to the public and the broader scientific and engineering community. While the grant date (when the patent is officially issued) is not provided in the abstract, the publication of the patent document (US-9853147) on December 26, 2017, indicates that the invention's details became publicly available at that time, allowing others to understand its scope and implications. These dates are essential for tracking the lifecycle of this significant power electronics innovation.\n\nKeywords: patent filing date, publication date, US-9853147, patent lifecycle, intellectual property dates, SiC MOSFET patent.","question":"When was High Voltage Mosfet Devices and Methods of Making the Devices filed/granted?"},{"answer":"The commercial applications of the High Voltage Mosfet Devices and Methods of Making the Devices are extensive, primarily focusing on areas requiring high-efficiency, high-voltage power conversion. This patent's innovations in reducing specific on-resistance and enhancing reliability make it ideal for a wide array of cutting-edge products and systems.\n\nOne of the most prominent applications is in **electric vehicles (EVs)**, including passenger cars, commercial vehicles, and electric buses. The device can be used in traction inverters (converting battery DC to motor AC), on-board chargers, and DC-DC converters, leading to longer driving ranges, faster charging, and more compact power electronics modules. This directly translates to competitive advantages for EV manufacturers.\n\nIn **renewable energy systems**, such as solar inverters and wind turbine converters, the High Voltage Mosfet Devices and Methods of Making the Devices can significantly boost energy harvesting efficiency. By minimizing power losses during DC-AC conversion, it maximizes the amount of usable electricity generated from solar panels or wind turbines, making renewable energy more economically viable and accelerating grid modernization efforts.\n\nFurthermore, **industrial power supplies and motor drives** represent another large market. High-efficiency power switches are crucial for reducing energy consumption in factories, robotics, and heavy machinery, leading to substantial operational cost savings and improved reliability for critical industrial processes. Data centers, with their immense power demands, also stand to benefit from more efficient and reliable power conversion units, reducing their carbon footprint and operating expenses. The versatility and superior performance of the High Voltage Mosfet Devices and Methods of Making the Devices make it a foundational technology for future electrification across these and many other high-power domains.\n\nKeywords: commercial applications, electric vehicles, solar inverters, industrial drives, data centers, power conversion, SiC market, energy saving products.","question":"What are the commercial applications of High Voltage Mosfet Devices and Methods of Making the Devices?"},{"answer":"The High Voltage Mosfet Devices and Methods of Making the Devices patent lays a robust foundation for exciting future developments in SiC power electronics. Building upon its core innovations of low specific on-resistance and enhanced reliability, several advancements can be anticipated.\n\nFirstly, there will likely be further **optimization of the anisotropic device geometry**. Researchers and engineers may explore different aspect ratios, doping profiles, and material combinations for the Y- and X-directional regions to push the limits of R_on,sp even lower, potentially leading to 'next-generation' versions of this device. This could involve more complex multi-directional current paths or novel junction designs.\n\nSecondly, **integration with advanced packaging technologies** will be critical. As the devices become more efficient, the focus will shift to minimizing losses at the module level. This could involve advanced die-attach materials, novel interconnects, and embedded packaging techniques that fully leverage the thermal and electrical benefits of the High Voltage Mosfet Devices and Methods of Making the Devices at a system level, enabling even higher power densities and improved thermal management in power modules.\n\nFinally, expect to see the principles of electric field management and current flow optimization, as described in this patent, inspiring new approaches to **higher breakdown voltage (e.g., >3.3kV) SiC devices and even other wide bandgap materials**. The techniques for minimizing gate-edge stress could be adapted to other device architectures or novel materials, further enhancing reliability across the entire power semiconductor spectrum. The High Voltage Mosfet Devices and Methods of Making the Devices is not just a product, but a conceptual leap that will fuel innovation for years to come.\n\nKeywords: future developments, SiC MOSFET roadmap, device optimization, advanced packaging, wide bandgap materials, high voltage research, power electronics innovation.","question":"What are the future developments expected for High Voltage Mosfet Devices and Methods of Making the Devices?"}],"topics":["High Voltage Mosfet Devices and Methods of Making the Devices","SiC MOSFET","low specific on-resistance","power electronics","high voltage devices","technical","architecture","fabrication"],"tech_cluster":null},"seo":{"title":"High Voltage Mosfet Devices - Low On-Resistance SiC Patent US-9853147","description":"Explore High Voltage Mosfet Devices and Methods of Making the Devices (US-9853147). Discover this SiC MOSFET with low specific on-resistance for high-efficiency power electronics.","keywords":["High Voltage Mosfet Devices and Methods of Making the Devices","SiC MOSFET","low specific on-resistance","power electronics","high voltage devices","semiconductor technology","electric vehicles","renewable energy","patent US-9853147","MOSFET fabrication","gate edge electric field","anisotropic device"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853147","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853147","citation_suggestion":"Patentable. \"High voltage MOSFET devices and methods of making the devices\" (US-9853147). https://patentable.app/patents/US-9853147","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853147","json":"https://patentable.app/api/llm-context/US-9853147","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:58:13.014Z"}