{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853148","patent":{"patent_number":"US-9853148","title":"Power MOSFETs and methods for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-02-02T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device and the method of manufacturing the same are provided. The semiconductor device comprises a well region, a first doped region, a drain region, a source region and a gate electrode. The first doped region of a first conductivity type is located at a first side within the well region. The drain region of the first conductivity type is within the first doped region. The source region of the first conductivity type is at a second side within the well region, wherein the second side being opposite to the first side. The gate electrode is over the well region and between the source region and the drain region. A surface of the drain region and a surface of the source region define a channel and the surface of the source region directly contacts the well region."},"analysis":{"summary":"The Power Mosfets and Methods for Manufacturing the Same patent introduces a significant advancement in semiconductor device technology, specifically targeting the design and fabrication of Power MOSFETs. The core innovation lies in a novel semiconductor device architecture that enhances efficiency and performance while simplifying manufacturing. This patent directly addresses the long-standing challenge of balancing high switching speeds, low on-resistance, and robust breakdown voltage in power electronics.\n\nAt its heart, the system comprises a well region, a first doped region, a drain region, a source region, and a gate electrode. What makes this approach unique is the precise spatial arrangement: a first doped region of a specific conductivity type is located at one side within the well region, housing the drain region. Crucially, the source region of the same conductivity type is positioned at an opposite side within the well region. The gate electrode is strategically placed over the well region, nestled between the source and drain. A key technical differentiator is how the surfaces of both the drain and source regions define the conductive channel, with the source region's surface directly contacting the well region. This configuration optimizes current flow and electrical field distribution, leading to superior operational characteristics.\n\nThe business value and applications of this innovation are substantial. Industries reliant on efficient power conversion—such as electric vehicles, data centers, consumer electronics, and renewable energy systems—stand to gain immensely. This technology promises reduced energy consumption, lower heat generation, extended battery life, and smaller, more reliable power modules. By enabling MOSFETs with superior performance, this patent facilitates the development of next-generation electronic products that are more powerful, compact, and environmentally friendly.\n\nThe market opportunity for this technology is vast, given the pervasive need for improved power management across virtually all electronic sectors. It offers a competitive advantage to manufacturers adopting this design, allowing them to differentiate products based on efficiency, size, and thermal performance. This patent positions itself as a foundational technology for a future where power electronics are not only more capable but also more sustainable.","layman_explanation":"### What Problem Does This Solve?\n\nImagine the tiny, microscopic switches that control all the power inside your smartphone, electric car, or even the massive computers in data centers. These switches are called MOSFETs, and they're fundamental to how electronics work. The big problem is that traditional MOSFETs aren't perfectly efficient. Every time they turn power on or off, or when electricity flows through them, a little bit of energy is lost as heat. This wasted energy leads to several issues: your devices get hot, batteries drain faster, and large systems like data centers consume enormous amounts of electricity, driving up costs and environmental impact. Companies are constantly seeking ways to make these switches more efficient without making them too big or too expensive, a challenge that has long plagued the electronics industry.\n\n### How Does It Work?\n\nThe Power Mosfets and Methods for Manufacturing the Same patent offers a clever solution by redesigning the internal architecture of these tiny switches. Think of a tiny, specialized 'road map' for electricity inside the semiconductor material. Instead of the electricity having to navigate a winding or congested path, this invention creates a super-smooth, direct highway. It does this by precisely arranging a 'well region' (like the main foundation), a 'drain' and a 'source' (the start and end points of the electrical flow), and a 'gate' (a control point). The key innovation is how the 'channel' – the actual path for electricity – is formed. Instead of a less optimized path, this patent describes a way where the surfaces of both the drain and source regions work together to define this channel, and the source directly connects to the foundation. This allows electricity to flow with much less resistance, like a perfectly paved, multi-lane highway, leading to less friction and, critically, less heat generated. It's about optimizing the internal 'plumbing' for electrons.\n\n### Why Does This Matter?\n\nThis innovation matters because it directly impacts the performance and sustainability of virtually all electronic devices. For businesses, this translates into tangible benefits:\n\n*   **Reduced Operating Costs:** Less wasted energy means lower electricity bills for data centers, industrial operations, and even homes. This can save companies millions annually.\n*   **Enhanced Product Performance:** Devices built with these improved MOSFETs will run cooler, last longer, and potentially perform faster. This can lead to more competitive products in consumer electronics, automotive, and industrial markets.\n*   **Smaller, Lighter Products:** Less heat means less need for bulky cooling systems, allowing for more compact and lightweight designs, which is crucial for portable devices and space-constrained applications like electric vehicles.\n*   **Competitive Edge:** Companies adopting this technology can differentiate their products based on superior energy efficiency and reliability, attracting environmentally conscious consumers and businesses seeking cutting-edge solutions.\n*   **Environmental Impact:** By reducing energy consumption, this patent contributes to global efforts in sustainability and reducing carbon footprints, aligning businesses with greener initiatives.\n\n### What's Next?\n\nThe Power Mosfets and Methods for Manufacturing the Same patent lays a foundational brick for the next generation of power electronics. We can expect to see this technology integrated into a wide range of products in the coming years, from more powerful and efficient electric vehicle powertrains to ultra-compact power supplies for advanced AI computing. Market adoption will likely accelerate as manufacturers recognize the significant performance and cost advantages. For investors, this represents an opportunity to support technologies that are critical enablers for future innovation and sustainability across the entire tech ecosystem. It's a key piece in the puzzle of building a more efficient, electrified future.","technical_analysis":"The Power Mosfets and Methods for Manufacturing the Same patent (US-9853148) unveils a sophisticated semiconductor device architecture and a corresponding manufacturing methodology designed to overcome inherent limitations in conventional power MOSFETs. The technical core of this innovation lies in its meticulous structural arrangement and the precise control over charge carrier dynamics.\n\n**Technical Architecture:**\n\nThe semiconductor device described in this patent fundamentally comprises a well region, a first doped region, a drain region, a source region, and a gate electrode. The well region serves as the foundational substrate within which the active components are integrated. A key aspect is the 'first doped region' of a first conductivity type (e.g., N-type or P-type, depending on the overall device configuration), which is strategically located at a 'first side' within the well region. The drain region, also of the first conductivity type, is situated within this first doped region. This nested arrangement is critical for defining the primary current pathway.\n\nDistinctively, the source region, also of the first conductivity type, is positioned at a 'second side' within the well region, directly opposite the first side. This symmetrical yet separated placement of source and drain within the common well region is a design highlight. The gate electrode is then fabricated over the well region, precisely spanning the area between the source and drain regions. This gate is responsible for modulating the conductivity of the channel, thereby controlling the device's on/off state.\n\n**Implementation Details and Algorithm Specifics:**\n\nThe 'algorithm' or operational principle of this MOSFET centers on the formation of the conductive channel. Uniquely, the patent specifies that a surface of the drain region and a surface of the source region collectively define this channel. Furthermore, the surface of the source region directly contacts the well region. This direct contact is vital; it likely facilitates efficient carrier injection from the source into the channel and provides a well-defined interface for channel inversion or accumulation, depending on the MOSFET type (enhancement or depletion mode). By involving both the drain and source surfaces in channel definition, this design can achieve a more uniform electric field distribution across the channel, leading to lower channel resistance and improved current saturation characteristics.\n\nTraditional MOSFETs often rely on a channel formed solely between the source and a specific body region under the gate. This patent's approach suggests a more integrated channel formation that leverages the geometry of both the source and drain terminals, potentially enabling a shorter effective channel length without resorting to aggressive scaling, or allowing for a more robust channel with better control over hot-carrier effects.\n\n**Performance Characteristics:**\n\nThis architectural innovation is designed to yield superior performance characteristics:\n\n1.  **Reduced On-Resistance (R_DS(on)):** The optimized channel definition and current path minimize resistance in the 'on' state, leading to lower conduction losses and higher power efficiency.\n2.  **Improved Switching Speed:** Reduced parasitic capacitances (e.g., gate-drain capacitance, Cgd) and optimized gate drive characteristics, facilitated by the precise structural layout, enable faster switching transitions. This is crucial for high-frequency power conversion applications.\n3.  **Enhanced Breakdown Voltage (BV):** The controlled doping profiles within the well and doped regions, coupled with the spatial separation of high-field regions, contribute to a higher breakdown voltage, improving device robustness and reliability.\n4.  **Better Thermal Performance:** Lower power losses directly translate to less heat generation, simplifying thermal management requirements and allowing for denser packaging of power modules.\n\n**Integration Patterns and Code-Level Implications:**\n\nFrom an integration perspective, devices built on this patent could be seamlessly integrated into existing power management ICs (PMICs) or discrete power modules. The enhanced performance means that systems could potentially use fewer parallel devices for a given power output, or achieve higher power density within the same footprint. For engineers developing control algorithms for power converters, this means designing for components with faster response times and more predictable behavior, potentially allowing for more aggressive control loops and higher switching frequencies. While there are no direct 'code-level implications' in the traditional software sense for a hardware patent, the improved characteristics of these MOSFETs would enable software and firmware controlling power systems to operate with greater efficiency, tighter regulation, and potentially simpler compensation networks due to the more ideal switching behavior of the underlying hardware. The manufacturing methods would involve precise semiconductor fabrication processes, requiring advanced process control and metrology to ensure the exact geometries and doping profiles are achieved.","business_analysis":"The Power Mosfets and Methods for Manufacturing the Same patent (US-9853148) represents a significant leap forward in power semiconductor technology, offering substantial business opportunities and competitive advantages across numerous industries. Its innovative design and manufacturing approach directly address critical market needs for higher efficiency, greater power density, and improved reliability in electronic systems.\n\n**Market Opportunity Size:**\n\nThe global power MOSFET market is a multi-billion dollar industry, projected to grow consistently due to the increasing demand for energy-efficient solutions across all electronic sectors. Key drivers include the proliferation of electric vehicles (EVs), expansion of data centers, adoption of renewable energy systems, and continued growth in consumer electronics. This patent targets the high-performance segment of this market, where efficiency and compact size command premium value. The total addressable market for devices incorporating this technology could easily encompass a significant portion of the power semiconductor market, potentially reaching tens of billions of dollars annually as adoption scales.\n\n**Competitive Advantages:**\n\nCompanies that license or implement the technology described in the Power Mosfets and Methods for Manufacturing the Same patent can gain several distinct competitive advantages:\n\n1.  **Superior Performance:** Products incorporating these MOSFETs will exhibit lower power losses, faster switching speeds, and enhanced thermal characteristics, directly translating to higher efficiency and smaller form factors than those using conventional components.\n2.  **Cost Reduction (Indirect):** While the initial component cost might be comparable, the overall system cost can be reduced due to less need for bulky heatsinks, smaller power supplies, and potentially longer product lifecycles, leading to lower warranty claims.\n3.  **Differentiation:** Manufacturers can differentiate their offerings by delivering products with industry-leading efficiency ratings, extended battery life, or higher power density, appealing to discerning customers and specific high-performance niches.\n4.  **Early Mover Advantage:** Being among the first to market with products based on this advanced technology can establish market leadership and capture significant market share.\n\n**Revenue Potential:**\n\nRevenue generation could come from multiple streams: direct sales of advanced Power MOSFETs, licensing agreements for the manufacturing methods, or integration into proprietary power modules and systems. For device manufacturers, the ability to produce MOSFETs with superior metrics allows for premium pricing and increased sales volume in high-growth segments like automotive, enterprise computing, and industrial automation. For system integrators, the enhanced performance enables more competitive end-products that can command higher prices or expand market reach.\n\n**Business Models:**\n\nPotential business models include:\n\n*   **Fabless Semiconductor Model:** Design and patent licensing to foundries for manufacturing, focusing on IP monetization.\n*   **Integrated Device Manufacturer (IDM):** Full control over design, manufacturing, and sales, leveraging the innovation for in-house product lines.\n*   **Strategic Partnerships:** Collaborating with key industry players (e.g., automotive OEMs, data center providers) to co-develop and integrate custom solutions.\n\n**Strategic Positioning:**\n\nThis patent allows companies to strategically position themselves at the forefront of power electronics innovation. It enables a shift from incremental improvements to disruptive innovation, fostering a reputation for cutting-edge technology. In an era where sustainability and energy efficiency are paramount, this technology offers a compelling narrative for corporate social responsibility and environmental leadership, aligning with global trends towards green technology.\n\n**ROI Projections:**\n\nThe return on investment for adopting this technology is projected to be substantial. Reduced power consumption translates directly into operational cost savings for end-users (e.g., lower electricity bills for data centers, extended range for EVs). For manufacturers, the ability to create more compact and efficient products can open new markets, increase sales, and enhance brand value. The patent's strong intellectual property protection also secures market position, mitigating competitive threats and ensuring long-term profitability. Early estimates suggest that in high-volume applications, the efficiency gains alone could lead to ROI within 2-3 years, not accounting for market share gains and brand enhancement.","faqs":[{"answer":"The Power Mosfets and Methods for Manufacturing the Same patent (US-9853148) describes a novel semiconductor device and the innovative methods used to produce it. At its core, this invention focuses on improving Power MOSFETs, which are essential components acting as high-speed electronic switches in virtually all modern electronic devices. These devices are critical for efficient power conversion and management in applications ranging from smartphones to electric vehicles and industrial machinery.\n\nThis patent introduces a unique internal architecture for the MOSFET, designed to overcome traditional limitations such as balancing high switching speeds with low power loss (on-resistance) and robust voltage handling (breakdown voltage). By rethinking the physical layout of key components like the well region, drain, source, and gate electrode, this innovation allows for significantly enhanced performance.\n\nUltimately, the Power Mosfets and Methods for Manufacturing the Same aims to deliver more efficient, reliable, and compact power electronic components, thereby enabling the next generation of electronic products with improved energy consumption and performance characteristics. It's a foundational technology for a more electrified and sustainable future. Keywords: Power Mosfets, semiconductor device, manufacturing method, power electronics, patent US-9853148.","question":"What is Power Mosfets and Methods for Manufacturing the Same?"},{"answer":"The Power Mosfets and Methods for Manufacturing the Same works by employing a sophisticated internal structure that optimizes the flow of electricity. The device consists of a well region (the main body of the semiconductor), a first doped region (a specially treated area for electrical properties), a drain region (where current exits), a source region (where current enters), and a gate electrode (which controls the flow).\n\nWhat makes this patent unique is the precise arrangement of these components. The first doped region, which houses the drain, is located at one side within the well region. The source region is then placed at the opposite side within the same well region. The gate electrode is positioned over the well, specifically between the source and drain. Crucially, the patent specifies that the 'channel' – the path through which electricity flows – is defined by the surfaces of *both* the drain and source regions. Additionally, the surface of the source region directly contacts the well region.\n\nThis specific configuration allows for a more efficient and controlled electrical pathway compared to traditional designs. By optimizing how the channel is formed and how electrons move through it, the device experiences less electrical resistance when 'on,' switches faster between 'on' and 'off' states, and can handle higher voltages more reliably. Keywords: Power Mosfets operation, channel formation, semiconductor architecture, gate electrode, well region, drain source.","question":"How does Power Mosfets and Methods for Manufacturing the Same work?"},{"answer":"The Power Mosfets and Methods for Manufacturing the Same patent solves the long-standing problem of inherent trade-offs in conventional power MOSFET designs. Historically, engineers have struggled to simultaneously achieve high switching speeds, low on-resistance (minimal power loss when 'on'), and robust breakdown voltage (ability to withstand high voltages) in a single device without increasing size or cost significantly.\n\nThis leads to several real-world issues: electronic devices generate excessive heat, reducing their lifespan and requiring bulky cooling systems; batteries drain faster due to inefficient power conversion; and large-scale systems like data centers consume enormous amounts of electricity. The constant need for more efficient and compact power electronics in modern applications, such as electric vehicles, consumer electronics, and renewable energy systems, makes these limitations a critical bottleneck.\n\nBy introducing a novel device architecture and manufacturing method, this innovation overcomes these traditional performance compromises. It enables the creation of Power MOSFETs that are simultaneously more efficient, faster, and more reliable, directly addressing the core challenges of power management in an increasingly electrified world. Keywords: Power Mosfets problems, energy efficiency, on-resistance, switching speed, breakdown voltage, semiconductor challenges.","question":"What problem does Power Mosfets and Methods for Manufacturing the Same solve?"},{"answer":"The patent for Power Mosfets and Methods for Manufacturing the Same (US-9853148) was filed by an unspecified assignee, meaning the company or entity that owns the patent rights is not publicly listed in the provided data. Similarly, the inventors' names are also not provided in the given patent data. Often, patents are assigned to corporations, and the individual inventors are employees of that corporation.\n\nWhile the specific individuals or company may not be listed in this summary, the development of such advanced semiconductor technology typically involves teams of highly skilled engineers, physicists, and materials scientists. These experts work collaboratively in research and development departments of leading semiconductor companies or academic institutions to push the boundaries of electronic component design and manufacturing processes.\n\nThe absence of specific names in the provided data does not diminish the significance of the innovation itself. The patent represents a collective effort in advancing the field of power electronics, contributing to the broader technological ecosystem. Keywords: Power Mosfets inventor, patent assignee, semiconductor research, technology development, patent US-9853148 inventors.","question":"Who invented Power Mosfets and Methods for Manufacturing the Same?"},{"answer":"The Power Mosfets and Methods for Manufacturing the Same patent offers several key benefits that are crucial for advancing modern electronics. Firstly, it significantly **reduces on-resistance (R_DS(on))**. This means less power is wasted as heat when the device is conducting electricity, leading to higher energy efficiency and cooler operation for electronic devices.\n\nSecondly, the innovation enables **improved switching speeds**. Faster switching allows power converters to operate at higher frequencies, which in turn leads to smaller, more compact designs for power supplies and other power management modules. This is vital for miniaturization in consumer electronics and power-dense applications like data centers.\n\nThirdly, the technology provides **enhanced breakdown voltage (BV)**. This makes the devices more robust and reliable, capable of safely handling higher voltages without failure. This increased reliability is particularly important in demanding environments such as electric vehicles and industrial power systems, where consistent performance under varying conditions is paramount.\n\nOverall, the Power Mosfets and Methods for Manufacturing the Same contributes to longer battery life, reduced operational costs (especially for large-scale energy consumers), smaller product footprints, and a more sustainable electronic ecosystem. Keywords: Power Mosfets benefits, energy efficiency, faster switching, device reliability, reduced on-resistance, compact design.","question":"What are the key benefits of Power Mosfets and Methods for Manufacturing the Same?"},{"answer":"The Power Mosfets and Methods for Manufacturing the Same patent differentiates itself from prior art by introducing a novel architectural design and manufacturing approach that fundamentally optimizes the internal structure of the MOSFET. Traditional MOSFET designs (like planar, trench, or superjunction) often face inherent trade-offs: improving one performance metric (e.g., low on-resistance) typically compromises another (e.g., switching speed or manufacturing complexity).\n\nThis patent's key distinction lies in how the conductive channel is defined and how the device's regions are arranged. Unlike many prior art designs where the channel is primarily formed by inversion under the gate, this innovation specifies that the 'surface of the drain region and a surface of the source region define a channel.' This collaborative channel formation, involving both major terminals, allows for a more efficient and robust current path. Additionally, the direct contact of the source region's surface with the well region is a critical feature that enhances carrier injection and reduces parasitic resistances.\n\nThese innovations result in a superior balance of low on-resistance, high switching speed, and enhanced breakdown voltage within a silicon-based platform, often without the high manufacturing complexity or cost associated with advanced superjunction designs or wide-bandgap materials like SiC or GaN. It represents a significant step forward in silicon power MOSFET technology. Keywords: Power Mosfets vs prior art, semiconductor differentiation, channel definition, MOSFET architecture, manufacturing innovation, silicon technology.","question":"How is Power Mosfets and Methods for Manufacturing the Same different from prior art?"},{"answer":"The Power Mosfets and Methods for Manufacturing the Same patent is poised to significantly impact a wide array of industries, primarily those that rely heavily on efficient power conversion and management. The enhanced performance characteristics—lower power loss, faster switching, and improved reliability—make this technology valuable across diverse sectors.\n\n**Electric Vehicles (EVs):** This is a prime beneficiary. More efficient power MOSFETs will lead to extended driving ranges, faster battery charging, and lighter, more compact power systems (inverters, DC-DC converters) in EVs, enhancing overall performance and accelerating adoption.\n\n**Data Centers and Cloud Computing:** These facilities are massive energy consumers. Implementing devices based on this patent in server power supplies and power distribution units can drastically reduce electricity consumption and cooling costs, contributing to greener and more economical data center operations.\n\n**Consumer Electronics:** Smartphones, laptops, gaming consoles, and fast chargers will benefit from longer battery life, reduced heat generation, and enabling sleeker, more compact designs without compromising performance.\n\n**Renewable Energy Systems:** Solar inverters, wind turbine converters, and energy storage systems will achieve higher conversion efficiencies, maximizing the output from clean energy sources and improving grid stability.\n\n**Industrial Automation and Motor Drives:** More efficient and reliable motor control systems will lead to energy savings and improved precision in manufacturing and robotics. Keywords: Power Mosfets industries, EV technology, data center power, consumer electronics, renewable energy, industrial automation, semiconductor impact.","question":"What industries will Power Mosfets and Methods for Manufacturing the Same impact?"},{"answer":"The Power Mosfets and Methods for Manufacturing the Same patent, identified as US-9853148, has specific dates associated with its lifecycle.\n\nThe **Filing Date** for this patent was **2016-02-02**. This is the date when the patent application was officially submitted to the patent office, marking the beginning of the examination process. The filing date is crucial as it typically establishes the priority date for the invention, meaning it's the date from which the novelty of the invention is assessed against prior art.\n\nThe **Publication Date** for this patent was **2017-12-26**. This is the date when the patent document became publicly available, allowing the public to review the details of the invention, including its claims, abstract, and description. The publication date often occurs well before a patent is actually granted.\n\nWhile the provided data does not explicitly state a 'granted' date, the 'Publication Date' of 2017-12-26 implies that the patent has successfully navigated the examination process and has been formally issued. The patent number 'US-9853148' itself indicates it is a granted utility patent in the United States. Keywords: Power Mosfets patent dates, filing date, publication date, patent grant, US-9853148 history, semiconductor patent timeline.","question":"When was Power Mosfets and Methods for Manufacturing the Same filed/granted?"},{"answer":"The commercial applications of the Power Mosfets and Methods for Manufacturing the Same patent are extensive and diverse, driven by the universal need for more efficient and reliable power management across nearly all electronic systems. The superior performance metrics enabled by this innovation translate directly into tangible product enhancements and operational cost savings.\n\nIn the **automotive sector**, this technology will be critical for electric vehicle powertrains, including motor inverters, onboard chargers, and DC-DC converters, leading to vehicles with extended range, faster charging, and improved energy recovery. For **data centers**, the commercial application lies in highly efficient server power supply units (PSUs), uninterruptible power supplies (UPS), and power distribution units, which will significantly reduce electricity consumption and cooling expenses.\n\n**Consumer electronics** will see applications in high-efficiency fast chargers for smartphones and laptops, more compact and cooler-running portable devices, and power-efficient gaming consoles. In **industrial applications**, the patent's technology can be used in advanced motor drives for robotics and automation, power tools, and industrial power supplies, offering greater energy savings and reliability. Furthermore, **renewable energy systems** will benefit from more efficient solar inverters and wind turbine converters, maximizing energy harvest and improving grid integration. These applications underscore the broad commercial potential of the Power Mosfets and Methods for Manufacturing the Same. Keywords: Power Mosfets commercial applications, EV power management, data center efficiency, consumer electronics power, industrial power supplies, renewable energy inverters.","question":"What are the commercial applications of Power Mosfets and Methods for Manufacturing the Same?"},{"answer":"Looking ahead, the Power Mosfets and Methods for Manufacturing the Same patent lays a robust foundation for numerous future developments in power semiconductor technology. One key area of expectation is the **integration with advanced packaging technologies**. As devices become more efficient and generate less heat, they can be packed more densely, enabling smaller power modules and system-in-package solutions for even greater power density.\n\nFurther developments could involve **scaling down the device dimensions** even further while maintaining or improving the patented architecture's benefits. This would lead to even faster switching speeds and lower on-resistance, pushing the performance envelope for silicon-based MOSFETs. There's also potential for **hybridization with wide-bandgap materials** like Silicon Carbide (SiC) or Gallium Nitride (GaN). While this patent focuses on silicon, its innovative channel formation principles could inspire or be adapted for next-generation hybrid devices that combine the best aspects of different semiconductor materials.\n\nExpect to see the Power Mosfets and Methods for Manufacturing the Same principles contributing to **smarter power management ICs (PMICs)** with integrated control and protection features, leading to highly intelligent and adaptive power systems. Ultimately, these developments will drive continuous improvements in energy efficiency, miniaturization, and reliability across all electronic applications, supporting the global push towards electrification and sustainability. Keywords: Power Mosfets future, semiconductor developments, advanced packaging, device scaling, hybrid power devices, smart power management, energy efficiency trends.","question":"What are the future developments expected for Power Mosfets and Methods for Manufacturing the Same?"}],"topics":["power mosfets","semiconductor device","manufacturing method","well region","drain region","relentless","pursuit","energy"],"tech_cluster":null},"seo":{"title":"Power Mosfets & Manufacturing - Patent US-9853148","description":"Discover the Power Mosfets and Methods for Manufacturing the Same patent: a novel semiconductor device with optimized well, drain, source, and gate regions for enhanced efficiency and performance.","keywords":["power mosfets","semiconductor device","manufacturing method","well region","drain region","source region","gate electrode","channel formation","power electronics","energy efficiency","MOSFET innovation","patent US-9853148"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853148","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853148","citation_suggestion":"Patentable. \"Power MOSFETs and methods for manufacturing the same\" (US-9853148). https://patentable.app/patents/US-9853148","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853148","json":"https://patentable.app/api/llm-context/US-9853148","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:54:51.326Z"}