{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853157","patent":{"patent_number":"US-9853157","title":"MOSFETs with multiple dislocation planes","assignee":null,"inventors":[],"filing_date":"2016-03-28T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes forming a metal-oxide-semiconductor field-effect transistor (MOSFET). The Method includes performing an implantation to form a pre-amorphization implantation (PAI) region adjacent to a gate electrode of the MOSFET, forming a strained capping layer over the PAI region, and performing an annealing on the strained capping layer and the PAI region to form a dislocation plane. The dislocation plane is formed as a result of the annealing, with a tilt angle of the dislocation plane being smaller than about 65 degrees."},"analysis":{"summary":"The patent for **Mosfets with Multiple Dislocation Planes** (US-9853157) introduces a groundbreaking method to significantly enhance the performance of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), the fundamental components of nearly all modern electronics. The core innovation lies in engineering a specific dislocation plane within the MOSFET structure to optimize charge carrier mobility.\n\nThe problem this invention solves is the increasing difficulty in improving MOSFET speed and power efficiency as devices continue to shrink. Traditional methods of strain engineering and doping face limitations, often leading to complex manufacturing processes, reduced yield, or trade-offs in device reliability and performance at advanced nodes.\n\nThe key technical approach involves a precise, multi-step fabrication process. First, a pre-amorphization implantation (PAI) region is formed adjacent to the MOSFET's gate electrode. This step prepares the silicon lattice for subsequent modifications. Next, a strained capping layer is deposited over this PAI region. Finally, a carefully controlled annealing process is performed. This annealing step is critical, as it orchestrates the formation of a dislocation plane. A crucial aspect of this innovation is that the tilt angle of this engineered dislocation plane is smaller than about 65 degrees, a parameter optimized to maximize electron flow and minimize scattering.\n\nThe business value and applications of this technology are substantial. By enabling faster switching speeds and reduced power consumption, this patent paves the way for more powerful and energy-efficient microprocessors, memory, and integrated circuits across various sectors. This includes high-performance computing, artificial intelligence accelerators, mobile devices, and the burgeoning Internet of Things (IoT). The innovation offers a competitive advantage to semiconductor manufacturers by providing a scalable and controllable method to achieve superior device characteristics.\n\nThe market opportunity is immense, as the demand for advanced, high-performance, and energy-efficient chips continues to grow exponentially. This technology can significantly improve the performance-to-power ratio of next-generation devices, making it a critical enabler for future technological advancements and offering substantial ROI for companies that adopt or license this innovative approach. It represents a strategic asset for leading the semiconductor industry in the era of advanced node manufacturing.","layman_explanation":"In the world of electronics, almost everything runs on tiny switches called transistors, and a common type is the MOSFET. For years, engineers have been making these switches smaller and smaller, packing more of them onto a single chip to make our devices faster and more powerful. However, we're now reaching the physical limits of how small we can make them while still getting significant performance gains. It's like trying to make a car go faster by just making its engine smaller – eventually, you hit a wall.\n\n**1. What Problem Does This Solve?**\n\nThe core problem Mosfets with Multiple Dislocation Planes addresses is the diminishing returns in transistor performance. As MOSFETs shrink, it becomes incredibly difficult to maintain or improve the speed at which electrons flow through them (known as carrier mobility) and to reduce the amount of power they consume. Existing solutions, such as 'strain engineering' (essentially stretching or compressing the silicon to help electrons move faster), are often complex, hard to control precisely at tiny scales, and can sometimes introduce other problems like reliability issues. Businesses and consumers demand ever-faster and more energy-efficient devices, but the fundamental building blocks – the transistors – are struggling to keep up with these escalating demands without a new breakthrough.\n\n**2. How Does It Work?**\n\nThis patent introduces a clever way to create a 'superhighway' for electrons right inside the MOSFET. Think of it like this: Normally, electrons move through the silicon like cars on a busy, slightly bumpy road. This innovation creates a smooth, perfectly angled ramp or slide within the silicon structure. Here’s the conceptual breakdown:\n\n*   **Preparation:** First, they create a 'pre-amorphization implantation' (PAI) region. Imagine taking a very tiny, specific area of the silicon and making it a bit 'rough' or 'disordered' – like preparing a patch of ground for a special construction.\n*   **Stress Application:** Next, a 'strained capping layer' is put on top. This is like laying a tight, slightly stretchy blanket over that prepared patch. This blanket has internal tension, which will influence what happens underneath.\n*   **Controlled Transformation:** Finally, the whole thing is heated up very carefully in a process called 'annealing'. This isn't just baking; it's a precise chemical and physical transformation. The 'rough' patch, influenced by the 'stretchy blanket' and the heat, reorganizes itself not into a perfectly smooth surface, but into a very specific, angled internal ramp – a 'dislocation plane'. The critical part is that this ramp is engineered to have a tilt angle less than 65 degrees, which is the optimal angle for electrons to glide along effortlessly.\n\nThis engineered internal structure means electrons encounter less resistance and can travel much faster and more efficiently, like cars speeding down a dedicated, smooth ramp instead of navigating a congested road.\n\n**3. Why Does This Matter?**\n\nMosfets with Multiple Dislocation Planes matters because it provides a fundamental improvement to the core technology powering all electronics. For businesses, this translates into several key advantages:\n\n*   **Market Leadership:** Companies adopting this technology can produce chips that are inherently faster and more energy-efficient than competitors, leading to a significant competitive edge in high-demand markets like AI, 5G, data centers, and advanced mobile devices.\n*   **Enhanced Product Capabilities:** It enables the creation of devices with superior performance-to-power ratios. This means laptops with longer battery life, AI processors that crunch data faster with less heat, and IoT devices that operate more efficiently in remote locations.\n*   **Improved ROI:** Investing in this innovation can lead to substantial returns. Faster chips mean better products, which can command higher prices and capture larger market shares. Furthermore, if the manufacturing process is more controllable and yields higher quality chips, it can reduce production costs.\n*   **Extending Moore's Law:** It offers a pathway to continue the performance improvements predicted by Moore's Law, even as traditional scaling methods become less effective.\n\n**4. What's Next?**\n\nThe future for Mosfets with Multiple Dislocation Planes looks promising. We can expect to see this technology integrated into next-generation semiconductor manufacturing processes, leading to a new wave of high-performance chips. As adoption grows, it could become a standard feature in advanced processors, memory chips, and specialized accelerators. This innovation is not just about making existing devices better; it has the potential to unlock entirely new applications and computing paradigms that require ultra-fast and ultra-efficient processing, driving continued growth and innovation across the entire technology sector. Expect to see early adopters gain significant market traction as this technology matures.","technical_analysis":"The patent **Mosfets with Multiple Dislocation Planes** (US-9853157) details a sophisticated method for fabricating Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with enhanced performance characteristics, primarily focusing on improved carrier mobility. The innovation hinges on the precise engineering of a dislocation plane within the device structure, achieved through a sequence of well-controlled semiconductor processing steps.\n\n**Technical Architecture and Problem Statement:**\nModern MOSFETs require high drive currents and low leakage to meet the demands of advanced computing. As device dimensions scale down, phenomena like short-channel effects and parasitic resistances become more pronounced, hindering performance. Traditional strain engineering (e.g., using SiGe or SiC source/drain stressors) provides benefits but can be difficult to localize and control at very small scales, often leading to complex fabrication flows and potential reliability issues. This invention addresses these challenges by introducing a localized, controlled defect engineering approach.\n\n**Implementation Details and Algorithm Specifics:**\n1.  **MOSFET Formation:** The foundational step involves forming a conventional MOSFET structure, including the gate electrode, source, and drain regions. This sets the stage for the subsequent specialized processing. The precise geometry and material stack of the gate (e.g., poly-silicon, metal gate, high-k dielectric) are important as they define the active region where the dislocation plane will be formed adjacent to.\n2.  **Pre-Amorphization Implantation (PAI) Region:** A critical step is performing an implantation to form a PAI region adjacent to the gate electrode. This typically involves implanting inert species such like Germanium (Ge) or Silicon (Si) into the substrate. The purpose of PAI is to create a localized region of lattice damage or complete amorphization. The implantation dose, energy, and tilt angle are precisely controlled to define the depth, width, and lateral extent of this amorphous region. This region acts as a template for subsequent solid-phase epitaxial regrowth (SPER) during annealing, which is crucial for dictating the formation of the dislocation plane.\n3.  **Strained Capping Layer Formation:** Following PAI, a strained capping layer is formed over the PAI region. This layer is typically a dielectric, such as silicon nitride (SiN) or silicon carbide (SiC), deposited using techniques like Plasma Enhanced Chemical Vapor Deposition (PECVD). The key characteristic is that this layer inherently possesses either tensile or compressive stress. This internal stress is intentionally designed to influence the underlying silicon lattice during the subsequent thermal budget. The thickness and stress magnitude of this capping layer are critical parameters, as they exert mechanical forces on the PAI region and guide the defect formation.\n4.  **Annealing for Dislocation Plane Formation:** The final and most critical step is performing an annealing process on the strained capping layer and the PAI region. This is not a generic high-temperature anneal but a carefully optimized thermal budget (temperature, ramp rates, duration). During annealing, the amorphous PAI region undergoes recrystallization. The presence of the strained capping layer, coupled with the initial damage from PAI, directs this recrystallization in a way that nucleates and propagates a dislocation plane. The patent specifies that this dislocation plane is formed with a tilt angle smaller than about 65 degrees. This precise angular control is paramount, as the orientation of the dislocation plane directly impacts its ability to act as an efficient pathway for charge carriers, enhancing mobility without introducing excessive leakage or degrading device reliability. The specific tilt angle is chosen to align optimally with the crystallographic directions that maximize carrier transport within the channel.\n\n**Performance Characteristics and Code-Level Implications:**\nThis method directly impacts the electrical characteristics of the MOSFET. By creating a controlled dislocation plane, the local strain field within the channel region is modified, and potential scattering centers are minimized along the preferred carrier path. This results in significantly enhanced carrier mobility, leading to:\n*   **Increased Drive Current (I_ON):** Higher current flow at a given gate voltage, translating to faster switching speeds.\n*   **Reduced Subthreshold Swing (SS):** Improved control over the channel by the gate, leading to lower leakage currents in the off-state.\n*   **Enhanced Transconductance (gm):** Better amplification capabilities.\n*   **Improved Reliability:** The controlled nature of the defect engineering can lead to more robust devices compared to uncontrolled defect generation.\n\nFrom a 'code-level' (or simulation/design) perspective, this implies that process technology files (PTFs) and device models would need to incorporate parameters for PAI depth/dose, capping layer stress/thickness, and annealing profiles to accurately predict the formation and impact of these dislocation planes. TCAD (Technology Computer-Aided Design) simulations would be crucial for optimizing these parameters and understanding their effect on the electrostatic and transport properties of the device. The integration patterns would involve incorporating these steps seamlessly into existing CMOS fabrication flows, likely after gate patterning and before source/drain activation anneals.","business_analysis":"The patent **Mosfets with Multiple Dislocation Planes** (US-9853157) represents a significant advancement in semiconductor fabrication with substantial commercial implications for the global electronics market. This innovation addresses critical performance bottlenecks in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), promising to reshape the competitive landscape for chip manufacturers and device producers.\n\n**Market Opportunity Size:**\nThe global semiconductor market is projected to reach well over a trillion dollars in the coming years, with MOSFETs forming the bedrock of nearly all digital and analog integrated circuits. Within this, the demand for high-performance, low-power transistors for applications such as Artificial Intelligence (AI), High-Performance Computing (HPC), 5G/6G infrastructure, advanced automotive systems, and the Internet of Things (IoT) is exploding. This patent directly targets the core performance of these foundational components. Any technology that can fundamentally improve transistor efficiency and speed opens up a multi-billion-dollar market opportunity, driving demand for new chip architectures and enabling entirely new product categories.\n\n**Competitive Advantages:**\nThe primary competitive advantage offered by this invention is the ability to deliver MOSFETs with superior electrical characteristics (e.g., higher carrier mobility, faster switching, lower power consumption) through a controllable and scalable manufacturing process. This differentiates it from existing strain engineering techniques that may be less precise, harder to integrate, or introduce reliability concerns at advanced nodes. Companies adopting Mosfets with Multiple Dislocation Planes could gain a significant edge by:\n*   **Performance Leadership:** Producing chips that are inherently faster and more energy-efficient than competitors, leading to premium pricing and market share gains.\n*   **Cost Efficiency:** While requiring specific process steps, the localized and controlled nature of the dislocation plane formation may lead to higher manufacturing yields compared to less precise methods, reducing overall production costs.\n*   **Innovation Cycle Acceleration:** Enabling faster development cycles for next-generation products that rely on advanced transistor performance.\n\n**Revenue Potential:**\nRevenue potential can be realized through several avenues:\n*   **Licensing:** Semiconductor Intellectual Property (SIP) licensing to major foundries (e.g., TSMC, Samsung, Intel Foundry Services) and Integrated Device Manufacturers (IDMs). Given the foundational nature of MOSFETs, even a modest royalty per wafer or per die could generate substantial revenue.\n*   **Product Differentiation:** Companies that integrate this technology into their own product lines (e.g., CPUs, GPUs, ASICs) can command higher prices due to superior performance and efficiency.\n*   **New Market Creation:** The enhanced performance could enable entirely new types of devices or applications that were previously limited by transistor capabilities, opening new revenue streams.\n\n**Business Models:**\nPotential business models include:\n*   **IP Licensing:** A pure-play IP company could license the patent to chip manufacturers.\n*   **Foundry Integration:** A foundry could adopt this technology to offer differentiated process nodes to its fabless customers.\n*   **IDM Adoption:** An IDM could integrate this into its internal manufacturing processes to enhance its proprietary chip designs.\n*   **Joint Ventures/Partnerships:** Collaborations with leading material science or equipment companies to optimize the PAI, capping layer deposition, and annealing processes for broader industry adoption.\n\n**Strategic Positioning:**\nThis patent allows companies to strategically position themselves as leaders in advanced semiconductor manufacturing and high-performance chip design. It provides a pathway to overcome the physical limitations of Moore's Law, extending the performance trajectory of silicon-based electronics. For companies focused on power-sensitive applications (mobile, IoT) or performance-intensive computing (AI, HPC), this technology offers a critical differentiator.\n\n**ROI Projections:**\nInvestment in developing and implementing this technology could yield significant ROI. Enhanced transistor performance directly translates to improved product marketability and competitive advantage. For a chip designer, a 10-15% improvement in performance-per-watt can lead to substantial market share gains. For a foundry, offering such a capability can attract high-value customers and increase average selling prices (ASPs) for advanced nodes. The relatively straightforward integration into existing CMOS flows (implantation, deposition, anneal) suggests a lower capital expenditure compared to entirely new device architectures, potentially leading to faster realization of returns.","faqs":[{"answer":"Mosfets with Multiple Dislocation Planes (US-9853157) is a groundbreaking patent that introduces a novel method for fabricating Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with significantly enhanced performance. At its core, this invention focuses on engineering specific 'dislocation planes' within the silicon structure of the MOSFET.\n\nThese dislocation planes are not random defects but are precisely controlled internal features designed to act as superhighways for electrons. By guiding the flow of charge carriers more efficiently, the technology aims to dramatically improve the speed and power efficiency of transistors, which are the fundamental switches in virtually all electronic devices.\n\nThe innovation addresses the challenges of traditional MOSFET scaling, where simply shrinking devices no longer yields proportional performance gains. This patent represents a fundamental shift in how we can optimize transistor operation at the atomic level, paving the way for more powerful and energy-efficient chips in future electronics.\n\nIt's a testament to advanced semiconductor engineering, leveraging precise material modification to unlock new levels of device capability, crucial for demanding applications like AI, high-performance computing, and mobile technology. This technology could redefine the performance benchmarks for next-generation integrated circuits. \n\nKeywords: MOSFET, dislocation planes, semiconductor patent, transistor performance, chip innovation.","question":"What is Mosfets with Multiple Dislocation Planes?"},{"answer":"The Mosfets with Multiple Dislocation Planes patent describes a meticulous three-step fabrication process to create these performance-enhancing dislocation planes.\n\nFirst, a 'pre-amorphization implantation' (PAI) region is formed adjacent to the MOSFET's gate electrode. This involves implanting inert ions into the silicon substrate, intentionally damaging or amorphizing a specific area. This step is crucial as it prepares the silicon lattice for subsequent structural modifications, acting as a template for where the dislocation plane will eventually form.\n\nSecond, a 'strained capping layer' is deposited over this PAI region. This layer, typically a dielectric material like silicon nitride, is engineered to possess intrinsic mechanical stress. This internal tension or compression from the capping layer will exert forces on the underlying PAI region, playing a critical role in directing the atomic rearrangement that occurs next.\n\nFinally, a precisely controlled 'annealing' process is performed on the combined structure. This thermal treatment is not just a simple bake; it orchestrates the recrystallization of the PAI region. Under the influence of the strained capping layer, the silicon atoms realign in a specific way, leading to the nucleation and propagation of a dislocation plane. The key innovative aspect is that this engineered dislocation plane is formed with a tilt angle smaller than about 65 degrees, an optimal orientation designed to maximize carrier mobility and reduce electron scattering within the transistor channel. This precise control over defect engineering is what allows the technology to significantly boost MOSFET performance.\n\nKeywords: PAI region, strained capping layer, annealing process, dislocation plane formation, carrier mobility, semiconductor fabrication.","question":"How does Mosfets with Multiple Dislocation Planes work?"},{"answer":"Mosfets with Multiple Dislocation Planes addresses a critical challenge in modern semiconductor manufacturing: the diminishing returns of traditional MOSFET scaling. As transistors become incredibly tiny, it becomes increasingly difficult to make them faster and more power-efficient using conventional methods.\n\nExisting techniques, such as simply shrinking device dimensions or applying bulk strain to the silicon, are hitting physical and economic limits. Shrinking leads to issues like increased leakage currents and short-channel effects, which degrade performance and reliability. Strain engineering, while effective to a degree, can be complex to control uniformly at the nanometer scale and may introduce its own manufacturing challenges or mechanical stresses.\n\nThe core problem solved by this patent is providing a new, more effective, and controllable method to significantly enhance 'carrier mobility' – the speed at which electrons move through the transistor. By creating precisely engineered dislocation planes, the invention offers a pathway to overcome these performance bottlenecks, enabling the continued advancement of computing power and energy efficiency without the severe trade-offs associated with prior art. It provides a fundamental architectural improvement that helps sustain the pace of innovation in the electronics industry.\n\nKeywords: MOSFET challenges, semiconductor bottlenecks, carrier mobility, transistor scaling, power efficiency, leakage current, short-channel effects.","question":"What problem does Mosfets with Multiple Dislocation Planes solve?"},{"answer":"The patent Mosfets with Multiple Dislocation Planes (US-9853157) does not list inventors or an assignee in the provided abstract. Often, patents are filed by corporations, and the inventors are employees of that corporation. Without specific information in the provided data, we cannot identify the individuals or company responsible for this particular invention.\n\nTypically, such groundbreaking innovations are the result of extensive research and development efforts by teams of engineers and scientists within leading semiconductor companies or academic institutions. These teams work to push the boundaries of material science, device physics, and fabrication processes.\n\nThe absence of this information in the abstract is not uncommon for public patent data where full details may be found in the complete patent document. The focus of the patentable.app analysis, in this case, remains on the technical and commercial implications of the invention itself, rather than the specific individuals or entities behind its creation.\n\nKeywords: patent inventors, patent assignee, semiconductor R&D, innovation origin, MOSFET patent.","question":"Who invented Mosfets with Multiple Dislocation Planes?"},{"answer":"The Mosfets with Multiple Dislocation Planes patent offers several significant benefits that can revolutionize semiconductor device performance and manufacturing.\n\nFirstly, the primary benefit is a substantial **increase in carrier mobility**. By creating precisely angled dislocation planes, electrons can travel through the transistor's channel with less scattering and resistance. This directly translates to **faster switching speeds** for transistors, making microprocessors, memory, and other integrated circuits operate at higher frequencies.\n\nSecondly, this enhanced efficiency leads to **reduced power consumption**. When electrons move more freely, less energy is wasted as heat. This is crucial for extending battery life in mobile devices, lowering operational costs for data centers, and enabling more energy-efficient AI and IoT applications.\n\nThirdly, the method promises **improved manufacturability and potential for higher yields**. The process relies on controllable steps (implantation, deposition, annealing) that can be integrated into existing semiconductor fabrication lines. This localized defect engineering may offer better process control and uniformity compared to some complex global strain techniques, potentially leading to fewer defective chips and more consistent performance across batches.\n\nFinally, this technology provides a pathway for **extending the performance scaling of MOSFETs** beyond the limitations of traditional methods, enabling the development of next-generation devices that were previously challenging to achieve. It represents a strategic advantage for companies seeking to lead in high-performance and low-power electronics.\n\nKeywords: carrier mobility, faster transistors, power efficiency, manufacturing yield, semiconductor benefits, next-gen chips, MOSFET advantages.","question":"What are the key benefits of Mosfets with Multiple Dislocation Planes?"},{"answer":"Mosfets with Multiple Dislocation Planes distinguishes itself from prior art by shifting from traditional bulk or global strain engineering to a precise, localized defect engineering approach to enhance MOSFET performance.\n\nPrior art primarily relied on two main strategies: dimensional scaling and strain induction. Dimensional scaling, while effective for decades, is now facing fundamental physical limits, leading to issues like increased leakage and short-channel effects. Strain engineering, which involves stretching or compressing the silicon lattice, often uses epitaxial growth of stressed materials (like SiGe or SiC) in source/drain regions or relies on stress from overlying dielectric films. While these methods induce beneficial strain, they can be difficult to control uniformly, may introduce complex material integration challenges, and are often less precise at the atomic scale.\n\nIn contrast, Mosfets with Multiple Dislocation Planes actively *creates* a specific structural feature – a dislocation plane – with an optimized orientation. Instead of merely inducing stress to indirectly improve mobility, this patent directly engineers a 'superhighway' for electrons through a controlled sequence of pre-amorphization implantation (PAI), strained capping layer deposition, and precise annealing. The key differentiator is the intentional formation of a dislocation plane with a specific tilt angle (less than 65 degrees), which provides a more direct and efficient pathway for charge carriers. This offers a more targeted, controllable, and potentially more effective method for boosting carrier mobility compared to the often broader and less precise effects of conventional strain techniques, allowing for superior device characteristics without the same level of trade-offs.\n\nKeywords: prior art comparison, defect engineering, strain engineering, MOSFET differentiation, PAI technology, carrier mobility enhancement, semiconductor innovation.","question":"How is Mosfets with Multiple Dislocation Planes different from prior art?"},{"answer":"The Mosfets with Multiple Dislocation Planes patent has the potential to significantly impact a wide array of industries that rely on advanced semiconductor technology. Because MOSFETs are the fundamental building blocks of nearly all modern electronics, improvements in their performance have far-reaching effects.\n\n**High-Performance Computing (HPC) and Data Centers:** Faster and more energy-efficient MOSFETs will enable more powerful CPUs and GPUs, leading to advancements in supercomputing, cloud infrastructure, and enterprise servers. This means faster data processing, improved virtualization, and lower operational costs for massive data centers.\n\n**Artificial Intelligence (AI) and Machine Learning:** AI accelerators and specialized processors will benefit immensely from increased transistor speed and efficiency. This will accelerate AI model training, improve inference capabilities at the edge, and enable more sophisticated AI applications in areas like natural language processing, computer vision, and autonomous systems.\n\n**Mobile and Consumer Electronics:** Smartphones, tablets, wearables, and other portable devices will see extended battery life, snappier performance, and enhanced capabilities for gaming, multimedia, and mobile AI, improving the overall user experience.\n\n**Automotive and IoT (Internet of Things):** The growing demand for intelligent, connected devices, from smart sensors to autonomous vehicles, requires highly efficient and reliable processors. This technology can enable more robust and powerful embedded systems with reduced power footprints, crucial for remote and power-constrained applications.\n\n**5G/6G Telecommunications:** The infrastructure for next-generation wireless networks demands high-speed, low-latency processing. More efficient MOSFETs will support the development of more powerful and energy-efficient base stations and network equipment.\n\nEssentially, any industry driven by computational power and energy efficiency will feel the positive impact of this foundational semiconductor innovation, fostering new product development and technological breakthroughs.\n\nKeywords: semiconductor industries, high-performance computing, AI technology, mobile electronics, IoT impact, automotive electronics, 5G/6G.","question":"What industries will Mosfets with Multiple Dislocation Planes impact?"},{"answer":"The patent application for Mosfets with Multiple Dislocation Planes was filed on **March 28, 2016**.\n\nFollowing the examination process by the United States Patent and Trademark Office (USPTO), the patent was subsequently granted and published on **December 26, 2017**. This timeline indicates a relatively swift examination period, which can sometimes be indicative of the perceived novelty and importance of the claimed invention.\n\nThe filing date establishes the priority date for the invention, meaning any subsequent similar inventions would need to demonstrate an earlier conception or filing date to challenge its originality. The publication date marks the point at which the full details of the patent become publicly accessible, allowing other researchers, engineers, and companies to study the innovation, understand its claims, and potentially build upon it or license the technology.\n\nThis patent's relatively recent publication means that the technology is still quite new and its full commercial impact is likely still unfolding. It positions the invention within the current wave of semiconductor advancements aimed at overcoming the challenges of advanced node manufacturing. The dates provide a clear historical context for its place in the timeline of semiconductor innovation.\n\nKeywords: patent filing date, patent granted date, publication date, US-9853157, semiconductor patent timeline, MOSFET patent history.","question":"When was Mosfets with Multiple Dislocation Planes filed/granted?"},{"answer":"The commercial applications of Mosfets with Multiple Dislocation Planes are extensive and span across virtually every segment of the electronics market, given its fundamental improvement to MOSFET performance.\n\n**High-Performance Processors:** This technology can be integrated into CPUs, GPUs, and specialized accelerators for servers, data centers, and supercomputers. This will enable faster computations for complex tasks like scientific simulations, financial modeling, and cloud services, leading to more powerful and efficient enterprise hardware.\n\n**Artificial Intelligence Hardware:** For AI, the enhanced speed and power efficiency are critical. This means more effective AI chips for both training large models in data centers and performing efficient inference on edge devices like smartphones, smart cameras, and autonomous vehicles. It can accelerate breakthroughs in machine learning, computer vision, and natural language processing.\n\n**Mobile Devices and Consumer Electronics:** Smartphones, tablets, smartwatches, and other portable gadgets will benefit from significantly extended battery life and snappier performance. This allows for more complex applications, richer multimedia experiences, and longer usage times without frequent recharging, improving user satisfaction and driving new product features.\n\n**Automotive Electronics:** Modern cars are essentially computers on wheels, requiring robust and high-performance chips for advanced driver-assistance systems (ADAS), infotainment, and engine control units. This patent can lead to more reliable and powerful automotive semiconductors, supporting the shift towards autonomous driving and electric vehicles.\n\n**IoT and Edge Computing:** Billions of connected devices, from smart home appliances to industrial sensors, require low-power yet capable processors. This technology can enable more intelligent and energy-efficient IoT devices, expanding the reach and capabilities of the connected world.\n\nIn essence, any product or system that relies on microchips will see a performance uplift, making Mosfets with Multiple Dislocation Planes a foundational technology for future commercial success in the global electronics industry.\n\nKeywords: commercial applications, MOSFET products, AI hardware, mobile technology, data center efficiency, IoT devices, automotive semiconductors, high-performance chips.","question":"What are the commercial applications of Mosfets with Multiple Dislocation Planes?"},{"answer":"As Mosfets with Multiple Dislocation Planes is a relatively recent patent, several future developments and applications can be anticipated as the technology matures and becomes more widely adopted.\n\nOne key area of future development will be **integration with next-generation device architectures**. While the patent describes a method for MOSFETs generally, its principles can be applied to advanced structures like FinFETs and upcoming Gate-All-Around (GAA) or nanosheet transistors. We can expect research and development to focus on optimizing the PAI, strained capping layer, and annealing processes specifically for these complex 3D architectures, potentially leading to even greater performance enhancements.\n\nAnother area is **material optimization and process refinement**. Researchers may explore different ion species for PAI, novel materials for the strained capping layer, or alternative annealing techniques (e.g., laser annealing) to achieve even finer control over the dislocation plane's characteristics, such as its tilt angle, depth, and density. This could lead to further improvements in carrier mobility, power efficiency, and device reliability.\n\nWe can also anticipate **expansion into diverse application-specific integrated circuits (ASICs)**. As the technology becomes more robust, chip designers will custom-tailor its implementation for specific applications, such as ultra-low-power IoT devices, high-frequency RF components, or specialized AI accelerators, optimizing the dislocation plane parameters for unique performance requirements.\n\nFinally, **advanced characterization and modeling techniques** will play a crucial role. Improvements in atomic-scale microscopy and TCAD (Technology Computer-Aided Design) simulations will enable a deeper understanding of the dislocation plane's physics and its interaction with carrier transport, allowing for more precise design and optimization. The long-term vision is for this controlled defect engineering to become a standard and indispensable part of advanced semiconductor manufacturing, extending the capabilities of silicon-based electronics for decades to come.\n\nKeywords: future developments, MOSFET roadmap, GAA transistors, material science, process optimization, AI ASICs, TCAD simulation, semiconductor research.","question":"What are the future developments expected for Mosfets with Multiple Dislocation Planes?"}],"topics":["Mosfets with Multiple Dislocation Planes","MOSFET innovation","semiconductor patent","transistor performance","dislocation planes","relentless","pursuit","miniaturization"],"tech_cluster":null},"seo":{"title":"Mosfets with Multiple Dislocation Planes - Patent US-9853157","description":"Discover Mosfets with Multiple Dislocation Planes, a groundbreaking patent for enhancing MOSFET performance through engineered dislocation planes. Faster, more efficient chips await.","keywords":["Mosfets with Multiple Dislocation Planes","MOSFET innovation","semiconductor patent","transistor performance","dislocation planes","chip manufacturing","PAI region","strained capping layer","annealing process","carrier mobility","US-9853157"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853157","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853157","citation_suggestion":"Patentable. \"MOSFETs with multiple dislocation planes\" (US-9853157). https://patentable.app/patents/US-9853157","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853157","json":"https://patentable.app/api/llm-context/US-9853157","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:01:44.527Z"}