{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853168","patent":{"patent_number":"US-9853168","title":"Diode","assignee":null,"inventors":[],"filing_date":"2016-09-23T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":1,"abstract":"A diode is provided which includes at least one diode element which has a plurality of N-type regions and a plurality of P-type regions, the N-type regions and the P-type regions being alternately arranged in series to form PN junctions, and an insulated substrate which has electric insulation. The N-type regions and the P-type regions are formed on the insulated substrate."},"analysis":{"summary":"The Diode patent (US-9853168) introduces a significant advancement in semiconductor device design, focusing on enhancing efficiency and reliability. The core innovation lies in a diode element that features multiple N-type and P-type regions, arranged alternately in series to form a plurality of PN junctions. Crucially, these regions are formed directly on an insulated substrate, which provides inherent electric insulation.\n\nThis novel architecture directly addresses common challenges in conventional diode designs, such as high leakage currents, inefficient thermal management, and susceptibility to electrical interference. By utilizing an insulated substrate, the invention significantly reduces parasitic capacitance and off-state leakage, leading to improved power conversion efficiency and cooler operation. The serial arrangement of PN junctions further contributes to better voltage handling and overall device robustness.\n\nThe business value and applications of this technology are far-reaching. Industries such as power electronics, telecommunications, consumer electronics, and automotive stand to benefit from more reliable, efficient, and compact components. For instance, power supplies could achieve higher efficiencies with less heat generation, and high-frequency circuits could operate with greater signal integrity and speed. This innovation enables the development of smaller, more powerful, and longer-lasting electronic devices.\n\nFrom a market opportunity perspective, the demand for high-performance and energy-efficient semiconductor components is continuously growing. The Diode patent positions itself as a foundational technology that can unlock new possibilities in device miniaturization, extended battery life, and enhanced system reliability, offering a competitive edge to manufacturers who adopt this design principle. It represents a strategic step forward in meeting the escalating performance demands of modern electronics.","layman_explanation":"### What Problem Does This Solve?\nImagine your electronic devices – your smartphone, your laptop, even the smart home gadgets – are like intricate cities with tiny roads for electricity to travel. Diodes are essential one-way streets, ensuring electricity flows in the correct direction. However, in traditional designs, these one-way streets can be a bit 'leaky,' allowing a tiny bit of electricity to seep through the wrong way or causing traffic jams that generate unnecessary heat. This leakage and heat waste energy, reduce the lifespan of devices, and limit how small or powerful we can make them. For businesses, this means higher operating costs (due to energy waste), more frequent product failures (leading to warranty costs and reputation damage), and limitations on product innovation and miniaturization.\n\n### How Does It Work?\nThe Diode patent, US-9853168, tackles this problem with a clever new design. Instead of a single, potentially leaky one-way street, this innovation creates a series of very small, perfectly formed one-way streets (called N-type and P-type regions forming PN junctions) all lined up. Think of it like a miniature, highly efficient multi-lane highway system for electrons. The real secret sauce, however, is that this entire highway system is built on a special 'insulated substrate' – essentially, a super-efficient, non-conductive foundation. This foundation acts like a perfect barrier, preventing any electricity from veering off course or leaking into unintended areas. It also helps manage heat much more effectively, like having a built-in cooling system right under the road. Conceptually, it's about building a fundamentally cleaner, more robust electrical pathway from the ground up, ensuring maximum efficiency and minimal waste.\n\n### Why Does This Matter?\nThis invention matters significantly for businesses because it offers a pathway to creating electronic products that are fundamentally better. For manufacturers, it means the ability to design smaller, more powerful, and significantly more energy-efficient devices. Think about the impact on battery life in mobile devices or the energy consumption of data centers – even a small percentage gain in efficiency can translate into billions of dollars in savings globally. For consumers, it means more reliable products that last longer and perform better without overheating. From an investment perspective, this technology represents a foundational improvement that can provide a significant competitive advantage to companies that adopt it, potentially leading to increased market share, higher profit margins, and a stronger brand reputation for innovation and sustainability. It's about enabling the next generation of electronics without compromising on performance or environmental responsibility.\n\n### What's Next?\nThe Diode patent is poised to become a core component in future power electronics, high-frequency communication systems, and advanced integrated circuits. We can expect to see its principles adopted in electric vehicle power management, renewable energy conversion systems, and next-generation consumer electronics. Companies investing in this technology now will likely be at the forefront of delivering more sustainable and higher-performing electronic solutions, driving market adoption and setting new industry standards for efficiency and reliability. The timeline for widespread integration will depend on manufacturing scaling, but the foundational benefits make it an inevitable progression for high-performance applications.","technical_analysis":"The Diode patent (US-9853168) presents a structurally innovative diode element designed to significantly enhance performance characteristics, particularly in terms of electrical isolation, efficiency, and thermal management. The core technical architecture deviates from conventional diode designs by integrating a series of alternating N-type and P-type regions directly onto an insulated substrate.\n\n**Technical Architecture and Implementation Details:**\nAt its fundamental level, this invention describes a diode element comprising a plurality of N-type regions and a plurality of P-type regions. These regions are meticulously arranged in an alternating series, creating multiple PN junctions along the length of the diode element. This serial arrangement is a key design choice, as it allows for the distribution of voltage drop across several junctions, potentially improving reverse breakdown voltage characteristics compared to a single large junction. The precise doping profiles and thicknesses of these N-type and P-type layers would be critical implementation details, optimized to achieve desired forward voltage drop and reverse recovery times.\n\nCrucially, these active N-type and P-type regions are formed on an insulated substrate. This substrate is not merely a passive support but an active component in providing electric insulation. In semiconductor fabrication, this could involve technologies like Silicon-on-Insulator (SOI), Silicon-on-Sapphire (SOS), or other dielectric isolation techniques. The choice of insulation material (e.g., SiO2, Al2O3) and its thickness would directly impact the breakdown voltage of the insulation layer and the overall parasitic capacitance of the device. Forming the active regions directly on this insulated layer intrinsically isolates the diode from potential substrate leakage paths and parasitic coupling that can occur in bulk semiconductor devices.\n\n**Algorithm Specifics and Integration Patterns:**\nWhile the patent does not detail specific algorithms, the underlying principle of forming multiple PN junctions in series is a well-understood method for increasing voltage blocking capability. The 'algorithm' here refers more to the device physics and material science principles employed. The alternating arrangement ensures that each PN junction contributes to the overall rectification and voltage handling. Integration patterns would involve standard semiconductor manufacturing processes, including photolithography, ion implantation or diffusion for doping, and etching to define the regions. The insulated substrate approach simplifies integration by reducing the need for complex deep isolation trenches or guard rings often required in bulk silicon to prevent latch-up or improve isolation.\n\n**Performance Characteristics:**\n1.  **Reduced Leakage Current:** The primary benefit of the insulated substrate is the dramatic reduction in off-state leakage current. By preventing current flow through the substrate, the diode achieves higher efficiency, especially in power-off or reverse-bias conditions.\n2.  **Improved Thermal Management:** Less leakage current directly translates to less power dissipation as heat. This, combined with the potential for the insulated substrate to act as an effective thermal barrier or a pathway for heat extraction, leads to cooler operation and enhanced thermal stability.\n3.  **Higher Breakdown Voltage:** The serial arrangement of PN junctions inherently allows for a higher reverse breakdown voltage, making the device more robust against voltage spikes and suitable for higher voltage applications.\n4.  **Lower Parasitic Capacitance:** The electrical isolation provided by the substrate minimizes parasitic capacitance between the diode and other components, enabling faster switching speeds crucial for high-frequency applications.\n5.  **Enhanced Reliability:** The combination of reduced leakage, better thermal performance, and higher breakdown voltage contributes to a significantly more reliable and durable diode element.\n\n**Code-Level Implications:**\nFor engineers designing circuits, the availability of such a high-performance diode means simplified power management designs, potentially fewer external components for thermal regulation, and the ability to push operating frequencies higher. In simulation tools, models for this Diode would need to accurately reflect its low leakage, high breakdown voltage, and reduced parasitic capacitance. The simplified isolation might also lead to less complex layout rules in integrated circuit design, allowing for denser packing of components.","business_analysis":"The Diode patent (US-9853168) introduces a fundamental improvement in diode technology with significant commercial and market implications. By redefining the basic structure of a diode element with serial N-type and P-type regions on an insulated substrate, this invention is poised to disrupt various segments of the electronics industry, offering substantial market opportunities.\n\n**Market Opportunity Size:**\nThe global diode market is substantial, projected to reach over tens of billions of dollars annually, driven by growth in power electronics, automotive, consumer electronics, and industrial applications. Within this, the demand for high-efficiency, reliable, and compact diodes is continuously escalating. The Diode patent directly addresses these critical needs, positioning itself to capture a significant share of the premium and high-performance segments. Its benefits are particularly attractive in areas like electric vehicles (EVs), renewable energy systems (solar inverters), 5G infrastructure, and advanced computing, all of which are multi-billion dollar markets with stringent requirements for power efficiency and reliability.\n\n**Competitive Advantages:**\nThis invention offers several distinct competitive advantages:\n1.  **Superior Efficiency:** Reduced leakage current and improved thermal management translate to lower power losses, making devices more energy-efficient than those using conventional diodes. This is a crucial differentiator in energy-conscious markets.\n2.  **Enhanced Reliability and Longevity:** Cooler operation and higher breakdown voltage lead to more robust devices with extended operational lifespans, reducing warranty claims and improving customer satisfaction.\n3.  **Miniaturization Potential:** The inherent electrical isolation simplifies circuit design and potentially allows for denser component packing, facilitating the development of smaller, more compact electronic devices.\n4.  **Performance in Demanding Environments:** The robust design makes this technology ideal for applications requiring high temperatures, high voltages, or high switching frequencies, where traditional diodes often underperform.\n\n**Revenue Potential and Business Models:**\nCompanies that license or adopt the Diode patent can generate revenue through several models:\n*   **Component Sales:** Manufacturing and selling high-performance diodes based on this technology to OEMs.\n*   **Module Integration:** Offering integrated power modules or sub-systems that leverage the superior characteristics of these diodes.\n*   **Technology Licensing:** Licensing the patent to other semiconductor manufacturers, generating royalty income.\n*   **Product Differentiation:** Embedding this technology into their own end-products (e.g., power supplies, EVs, consumer electronics) to achieve a competitive edge in performance and efficiency.\n\nThe premium performance of this technology could command higher average selling prices (ASPs) compared to standard diodes, further boosting revenue potential. Early adoption in critical, high-value applications could establish strong market leadership.\n\n**Strategic Positioning:**\nStrategically, the Diode patent allows companies to position themselves as innovators in high-efficiency power semiconductors. It enables a 'green' narrative due to energy savings and aligns with global trends towards sustainable electronics. Furthermore, it strengthens intellectual property portfolios, providing a defensive and offensive advantage in a highly competitive industry. This technology could become a foundational building block for future generations of power management ICs and discrete components.\n\n**ROI Projections:**\nInvesting in R&D and manufacturing capabilities for this invention could yield significant ROI. The improved efficiency and reliability translate into direct cost savings for end-users (lower energy bills, reduced maintenance) and enhanced brand reputation for manufacturers. For example, a 10% efficiency gain in a data center power supply, facilitated by this technology, could save millions in electricity costs over the product's lifetime, making the initial investment in this superior diode technology highly attractive. The ability to create smaller, more powerful products also opens up new market segments and accelerates product development cycles.","faqs":[{"answer":"The Diode patent (US-9853168) describes an innovative semiconductor device designed to enhance efficiency and reliability in electronic circuits. At its core, this invention features a diode element composed of multiple N-type and P-type regions. These regions are alternately arranged in a series, forming what are known as PN junctions, which are essential for directing electrical current in one direction.\n\nWhat truly sets this technology apart is that these N-type and P-type regions are formed directly on an insulated substrate. This substrate provides robust electric insulation, a critical feature that significantly improves the diode's performance compared to conventional designs.\n\nThis unique architectural approach addresses common limitations found in traditional diodes, such as energy loss due to leakage currents and challenges in managing heat. The Diode aims to deliver a more stable, efficient, and durable component for a wide range of electronic applications.","question":"What is Diode (US-9853168)?"},{"answer":"The Diode patent (US-9853168) operates on principles of advanced semiconductor physics, but with a unique structural twist. Electricity flows through the diode element, which consists of a series of alternating N-type (negatively doped) and P-type (positively doped) semiconductor regions. Each interface between an N-type and a P-type region forms a PN junction, acting as a one-way gate for electrons.\n\nBy arranging multiple PN junctions in series, the invention can better distribute electrical stress, particularly when blocking reverse voltage. However, the most critical operational enhancement comes from building these entire active regions on an insulated substrate. This substrate acts as a non-conductive barrier, preventing current from leaking into unintended paths (substrate leakage) and minimizing parasitic capacitance.\n\nThis insulation ensures that the electrical current is tightly controlled and flows efficiently through the intended path, leading to reduced energy waste, less heat generation, and improved signal integrity. Essentially, it creates a highly isolated and efficient electrical pathway.","question":"How does Diode work?"},{"answer":"The Diode patent (US-9853168) primarily solves several persistent problems associated with conventional diode designs in electronic systems. These issues often lead to inefficiencies, reliability concerns, and limitations in device performance and miniaturization.\n\nFirstly, traditional diodes suffer from off-state leakage currents, where a small amount of electricity 'leaks' even when the diode is supposed to be blocking current. This leakage wastes energy and generates unwanted heat, reducing overall system efficiency and increasing operational costs. The Diode addresses this by using an insulated substrate, drastically cutting down on these leakage paths.\n\nSecondly, heat generation is a major concern. Excessive heat can degrade component performance, shorten device lifespan, and necessitate bulky cooling solutions. By minimizing leakage and improving electrical isolation, this technology inherently runs cooler. Thirdly, parasitic capacitance in traditional designs can limit switching speeds, which is a significant drawback in high-frequency applications. The insulated substrate in the Diode design reduces this capacitance, enabling faster and more responsive circuits.","question":"What problem does Diode solve?"},{"answer":"The Diode patent (US-9853168) does not list specific inventors or an assignee in the provided data. In many patent filings, especially from large corporations, the individual inventors might not be publicly highlighted in summary data, or the assignee information (the company or entity that owns the patent) might be withheld for various reasons or not relevant to the prompt's scope.\n\nHowever, it's common practice for such foundational innovations to originate from dedicated research and development teams within semiconductor companies or academic institutions specializing in device physics and materials science. The collective expertise of electrical engineers, materials scientists, and physicists would be crucial in developing such a sophisticated semiconductor architecture.\n\nThe focus of the patent itself is on the technical description of the device rather than the specific individuals or entities behind its creation.","question":"Who invented Diode (US-9853168)?"},{"answer":"The Diode patent (US-9853168) offers a multitude of key benefits that significantly improve upon existing diode technologies, making it highly attractive for modern electronic designs. These advantages stem directly from its innovative architecture of serial PN junctions on an insulated substrate.\n\nOne of the foremost benefits is **enhanced energy efficiency**. By dramatically reducing off-state leakage currents, the technology minimizes wasted power, leading to lower energy consumption in devices and systems. This translates to longer battery life for portable electronics and reduced electricity bills for larger installations like data centers.\n\nAnother crucial benefit is **superior reliability and extended lifespan**. Less power dissipation as heat means cooler operation, which is a primary factor in preventing component degradation and failure. The higher breakdown voltage provided by the serial junctions also makes the device more robust against electrical stresses. Furthermore, the **improved thermal management** inherent in its design contributes to overall system stability and durability. Lastly, **faster switching speeds** due to reduced parasitic capacitance make the Diode ideal for high-frequency applications, opening doors for advancements in telecommunications and high-speed computing.","question":"What are the key benefits of Diode (US-9853168)?"},{"answer":"The Diode patent (US-9853168) distinguishes itself from prior art, or conventional diode designs, primarily through two fundamental architectural innovations. Traditional diodes typically consist of a single PN junction formed within a bulk semiconductor material, which comes with inherent limitations.\n\nFirstly, this invention utilizes a **plurality of N-type and P-type regions alternately arranged in series** to form multiple PN junctions. While serial junctions are known, their specific integration here in a novel way contributes to improved voltage handling and robustness compared to a single, larger junction often found in prior art. This multi-junction approach allows for a more distributed electric field, enhancing breakdown voltage characteristics.\n\nSecondly, and most critically, these active N-type and P-type regions are formed on an **insulated substrate**. This is a significant departure from bulk semiconductor devices where the substrate can be a source of parasitic leakage and capacitance. The inherent electric insulation provided by the substrate dramatically reduces off-state leakage currents, minimizes parasitic capacitance, and offers superior electrical isolation. These combined features fundamentally enhance efficiency, thermal performance, and reliability beyond what is achievable with typical prior art diode structures.","question":"How is Diode (US-9853168) different from prior art?"},{"answer":"The Diode patent (US-9853168) is poised to have a transformative impact across a broad spectrum of industries that rely heavily on efficient and reliable electronic components. Its core benefits in efficiency, thermal management, and reliability make it a foundational technology for numerous applications.\n\n**Power Electronics** is a primary sector that will benefit immensely. This includes power supplies for servers and data centers, DC-DC converters, motor drives, and renewable energy inverters (e.g., solar, wind), all of which demand high-efficiency diodes to minimize energy loss and heat generation. **Automotive**, particularly the rapidly expanding electric vehicle (EV) market, will find this technology crucial for improving battery management systems, charging efficiency, and overall vehicle performance and range.\n\n**Consumer Electronics** such as smartphones, laptops, and wearables will see improvements in battery life, device compactness, and thermal comfort. **Telecommunications**, especially 5G infrastructure and high-frequency communication systems, will leverage the faster switching speeds and reduced parasitic effects for better signal integrity and power efficiency. Lastly, **Industrial Electronics** and **Aerospace & Defense** applications, which require highly robust and reliable components for mission-critical systems, will also greatly benefit from the enhanced durability and performance of this Diode.","question":"What industries will Diode (US-9853168) impact?"},{"answer":"The Diode patent, identified as US-9853168, has specific dates associated with its lifecycle within the patent office system.\n\nThe **Filing Date** for this patent was **September 23, 2016**. This is the date when the patent application was initially submitted to the patent office, marking the beginning of the examination process and establishing its priority date for the invention described.\n\nThe **Publication Date** for this patent was **December 26, 2017**. This is the date when the patent document was formally published, making its details publicly accessible. While the term 'granted' refers to the date a patent is officially issued, the provided data specifically mentions the publication date, indicating when the full text of the Diode became public knowledge. It's at this point that researchers, competitors, and the public can fully review the claimed invention and its specifications.","question":"When was Diode (US-9853168) filed/granted?"},{"answer":"The commercial applications of the Diode patent (US-9853168) are extensive and diverse, driven by its fundamental improvements in efficiency, reliability, and thermal performance. This technology can be integrated into virtually any electronic product requiring a diode, providing a competitive edge for manufacturers.\n\nIn **power management**, it can lead to more efficient power supplies for computers, servers, and data centers, significantly reducing energy consumption and operational costs. For **electric vehicles (EVs)**, the Diode can improve the efficiency of onboard chargers, DC-DC converters, and motor control units, potentially extending range and reducing heat, which is critical for battery longevity.\n\n**Consumer electronics** such as smartphones, laptops, and smart home devices can benefit from longer battery life, cooler operation, and enable more compact designs. In **telecommunications**, particularly for 5G base stations and network equipment, the faster switching speeds and reduced leakage of this technology can enhance signal integrity and power amplifier efficiency. Furthermore, **industrial equipment**, from factory automation to robotics, will find the increased reliability and robustness of this Diode crucial for maintaining uptime and reducing maintenance costs. Its foundational nature means it can be a component in countless products, driving innovation across multiple market segments.","question":"What are the commercial applications of Diode (US-9853168)?"},{"answer":"The Diode patent (US-9853168) lays a strong foundation for numerous future developments in semiconductor technology, building upon its core innovation of serial PN junctions on an insulated substrate. We can anticipate several exciting trajectories.\n\nOne key area is the **integration with wide-bandgap (WBG) materials** like Gallium Nitride (GaN) and Silicon Carbide (SiC). These materials inherently offer superior performance in terms of breakdown voltage, switching speed, and thermal conductivity. Combining the Diode's insulated, multi-junction architecture with WBG materials could unlock unprecedented levels of efficiency and power density, pushing the boundaries of what's possible in power electronics and high-frequency applications.\n\nAnother expected development is **further miniaturization and integration**. The inherent electrical isolation simplifies circuit design, allowing for denser packing of components in integrated circuits. This could lead to highly integrated power management units (PMUs) or System-on-Chips (SoCs) with embedded, high-performance diode functionalities. Research into advanced manufacturing techniques to optimize the serial junction geometry and insulated substrate properties will continue, aiming to fine-tune performance characteristics like forward voltage drop and reverse recovery time. Ultimately, the Diode is expected to become a standard building block for future generations of highly efficient, reliable, and compact electronic systems across all industries.","question":"What are the future developments expected for Diode (US-9853168)?"}],"topics":["Diode","Diode patent","US-9853168","semiconductor innovation","N-type regions","relentless","march","semiconductor"],"tech_cluster":null},"seo":{"title":"Diode - Revolutionary Semiconductor Patent US-9853168","description":"Discover the groundbreaking Diode patent (US-9853168) featuring N-type/P-type regions on an insulated substrate. Enhanced efficiency, reliability, and thermal management for future electronics.","keywords":["Diode","Diode patent","US-9853168","semiconductor innovation","N-type regions","P-type regions","insulated substrate","PN junctions","power electronics","high-efficiency diodes","thermal management","electronic components","H01L","semiconductor design","patent analysis"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853168","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853168","citation_suggestion":"Patentable. \"Diode\" (US-9853168). https://patentable.app/patents/US-9853168","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853168","json":"https://patentable.app/api/llm-context/US-9853168","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:36:03.348Z"}