{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853169","patent":{"patent_number":"US-9853169","title":"Stacked capacitor structure","assignee":null,"inventors":[],"filing_date":"2016-10-18T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":19,"abstract":"A stacked capacitor structure includes a MOS varactor and a stacked capacitor. The stacked capacitor is electrically connected to the MOS varactor. The MOS varactor includes a substrate, a gate, a first source/drain and a second source/drain. The substrate has a well, and the gate is positioned over the well. The first source/drain and the second source/drain are formed in the well and positioned at opposing sides of the gate. The stacked capacitor includes a plurality of metal layers. The metal layers are spaced from each other, stacked above the gate, and positioned below an inductive element."},"analysis":{"summary":"The **Stacked Capacitor Structure** patent (US-9853169) introduces a highly integrated and compact electronic component design that addresses critical space and performance challenges in modern microelectronics. Its core innovation lies in the unique vertical integration of a Metal-Oxide-Semiconductor (MOS) varactor and a stacked capacitor.\n\nThe problem this invention solves is the inefficient use of silicon real estate and the degradation of electrical performance due to lengthy interconnections in traditional planar component layouts. In conventional designs, MOS varactors and stacked capacitors, essential for tunable circuits in applications like RF communication, often occupy significant horizontal space, leading to larger chip sizes and increased parasitic effects.\n\nThe key technical approach involves constructing a MOS varactor with a gate positioned over a well in a substrate, flanked by source/drain regions. Crucially, a stacked capacitor, comprising multiple metal layers, is then built directly above this varactor's gate and electrically connected to it, all while being positioned below an inductive element. This three-dimensional stacking minimizes the physical footprint and shortens critical signal paths.\n\nThe business value and applications of the Stacked Capacitor Structure are substantial. By enabling significantly smaller, yet higher-performing, variable capacitance elements, this technology paves the way for the development of ultra-compact and energy-efficient electronic devices. Industries such as wireless communication (e.g., 5G transceivers), IoT, wearables, and advanced automotive electronics stand to benefit immensely from the reduced chip area, improved Q-factor, and enhanced signal integrity this design offers. It simplifies layout complexity and accelerates product development cycles.\n\nThe market opportunity is vast, driven by the pervasive demand for miniaturization and performance enhancement across all electronic sectors. This patent provides a foundational technology for next-generation integrated circuits, offering a competitive advantage to manufacturers capable of implementing its sophisticated vertical integration. It represents a significant step towards more powerful functionalities within ever-shrinking form factors.","layman_explanation":"### 1. What Problem Does This Solve?\n\nImagine you're building a tiny, high-tech city on a very small piece of land, like a microchip. In this city, you need essential buildings like 'tunable towers' (varactors) and 'storage units' (capacitors) for your communication network. Traditionally, these buildings are spread out side-by-side, taking up a lot of precious land. The paths connecting them also become long and winding, which slows down communication and makes the whole city less efficient. This 'land scarcity' and 'slow traffic' problem is a major headache for engineers trying to make our devices smaller, faster, and more powerful.\n\nExisting solutions often involve compromises: either you make the buildings smaller but less effective, or you make them effective but they take up too much land. This trade-off limits how compact and high-performing devices like smartphones, smartwatches, and 5G equipment can be. The challenge is to get maximum functionality and speed out of minimal space without performance degradation.\n\n### 2. How Does It Work?\n\nThe **Stacked Capacitor Structure** patent introduces a clever architectural solution, much like a visionary urban planner. Instead of building the 'storage units' (the stacked capacitor) next to the 'tunable towers' (the MOS varactor), this innovation proposes building the storage units *directly on top* of the tunable towers. Think of it as constructing a multi-story parking garage (the capacitor layers) right above the main entrance of a dynamic building (the varactor's gate).\n\nSpecifically, the patent describes a MOS varactor—a semiconductor device whose capacitance can be varied by an applied voltage—with its core components (gate, well, source/drain) laid out. Then, multiple layers of metal, which form the stacked capacitor, are fabricated directly above this varactor's gate. These layers are precisely spaced and electrically connected to the varactor. The entire assembly is then positioned below an inductive element, potentially forming a complete resonant circuit. This vertical stacking minimizes the 'footprint' or horizontal space required on the 'land' (the silicon chip). Because the components are so close, the 'paths' (interconnections) between them are extremely short, reducing any 'traffic jams' (parasitic effects) and allowing for much faster and more efficient 'communication' (electrical signals).\n\n### 3. Why Does This Matter?\n\nThis innovation matters immensely because it directly impacts the fundamental limits of miniaturization and performance in electronics. For businesses, this translates into several key advantages:\n\n*   **Smaller Products, More Features:** By significantly reducing the space required for critical components, manufacturers can design smaller, sleeker devices without compromising functionality, or even add more features into existing form factors. This is crucial for competitive consumer electronics markets.\n*   **Enhanced Performance:** The improved electrical efficiency means devices can operate faster, consume less power, and have better signal quality. For example, in 5G communication, this could lead to more reliable connections and longer battery life.\n*   **Cost Savings:** Less silicon real estate per component means more components can be produced on a single wafer, driving down manufacturing costs. This directly impacts profit margins and allows for more competitive pricing.\n*   **Competitive Edge:** Companies that adopt this technology can differentiate their products by offering superior performance and smaller form factors, gaining a significant advantage in a crowded market. It allows them to lead in areas requiring advanced integration, such as high-frequency RF modules or complex System-on-Chip designs.\n\n### 4. What's Next?\n\nThe **Stacked Capacitor Structure** has the potential to become a foundational building block for future generations of integrated circuits. We can expect to see this technology enabling ultra-compact IoT devices, more sophisticated wearables, and highly efficient communication systems. Its principles might also extend to other areas of vertical integration, leading to entirely new component architectures. Early adoption by leading semiconductor manufacturers could set new industry standards for design and performance, creating new investment opportunities in companies leveraging these advanced integration techniques to push the boundaries of electronic innovation.","technical_analysis":"The **Stacked Capacitor Structure** patent (US-9853169) presents an ingenious architectural solution for integrating a MOS varactor and a stacked capacitor, addressing the critical challenges of miniaturization and performance in modern semiconductor design. This innovation is particularly relevant for applications requiring tunable capacitance in compact footprints, such as RF front-ends, voltage-controlled oscillators (VCOs), and phase-locked loops (PLLs).\n\n**Technical Architecture:**\nThe core of this invention is a vertically integrated structure. It comprises: \n1.  **MOS Varactor:** This is the active, voltage-controlled capacitance element. It consists of a semiconductor substrate with a 'well' (e.g., a p-well in an n-type substrate, or vice-versa). A 'gate' electrode is positioned over this well, typically separated by a thin gate dielectric. First and second 'source/drain' regions are formed within the well, positioned on opposing sides of the gate. The capacitance of the MOS varactor is controlled by the voltage applied to its gate, modulating the depletion region or inversion layer under the gate.\n2.  **Stacked Capacitor:** This passive capacitance element is formed by a plurality of 'metal layers' (e.g., M1, M2, M3, etc.) separated by inter-metal dielectrics (IMD). The critical architectural feature is that these metal layers are stacked *above* the gate of the MOS varactor. This vertical placement is key to the space-saving aspect of the invention.\n3.  **Electrical Connection:** The stacked capacitor is electrically connected to the MOS varactor. While the abstract doesn't specify the exact connection point (e.g., to the gate, source/drain, or well), it implies a synergistic operation where the stacked capacitor either augments the varactor's capacitance, provides a fixed offset, or forms part of a composite tunable element.\n4.  **Inductive Element Placement:** The entire stacked capacitor structure is positioned *below* an inductive element. This suggests a complete resonant LC tank can be formed in a highly compact vertical stack, where L is above the C, and the C is partially tunable via the MOS varactor.\n\n**Implementation Details:**\nFabrication of the Stacked Capacitor Structure would typically occur within a standard CMOS manufacturing process flow. The MOS varactor would be defined in the initial front-end-of-line (FEOL) steps, involving doping, epitaxy, and gate patterning. Subsequently, the back-end-of-line (BEOL) processes would be utilized to construct the stacked capacitor. This involves depositing multiple layers of metal (e.g., copper or aluminum) and dielectric materials (e.g., silicon dioxide, low-k dielectrics), followed by patterning and etching to form the capacitor plates and interconnects. The precise alignment of the stacked capacitor directly over the varactor's gate requires careful photolithography and process control. The electrical connection would involve via and metal routing within the BEOL layers.\n\n**Algorithm Specifics (N/A for hardware patent):**\nThis patent describes a hardware structure, not an algorithm. However, the design implicitly optimizes for certain electrical 'algorithms' or characteristics:\n*   **Capacitance Tuning:** The MOS varactor allows for voltage-controlled capacitance, which can be dynamically adjusted by an external control voltage, enabling frequency tuning in circuits.\n*   **Parasitic Reduction:** The compact vertical integration inherently minimizes the length and number of interconnects, which reduces parasitic series resistance and parallel capacitance. This improves the quality factor (Q) of the overall capacitance structure, critical for high-frequency performance.\n\n**Integration Patterns:**\nThis invention itself *is* an integration pattern. It represents a highly localized, vertical integration of active (MOS varactor) and passive (stacked capacitor) components, with an implicit further integration potential with an inductor. This pattern is ideal for creating compact, tunable resonant circuits (LC tanks), which are fundamental building blocks in RF transceivers, frequency synthesizers, and impedance matching networks. The device could be integrated as a standalone tunable capacitor block within larger SoCs.\n\n**Performance Characteristics:**\n*   **Footprint:** Significantly reduced compared to planar implementations of separate varactors and capacitors.\n*   **Q-factor:** Expected to be higher due to minimized parasitic resistance from shorter interconnects.\n*   **Tuning Range:** The MOS varactor provides tunability, potentially enhanced or offset by the fixed capacitance of the stacked layers.\n*   **Operating Frequency:** Improved due to lower parasitics, enabling operation at higher RF and millimeter-wave frequencies.\n\n**Code-Level Implications (N/A for hardware patent):**\nWhile there are no direct code-level implications, this patent influences the design and simulation tools used by engineers. EDA (Electronic Design Automation) tools would need to accurately model the 3D parasitic effects and electrical behavior of such a vertically integrated structure. Designers using these tools would leverage this architecture to optimize circuit layouts for compact tunable elements, influencing the 'code' (netlists, layout files) generated for chip fabrication.","business_analysis":"The **Stacked Capacitor Structure** patent (US-9853169) represents a compelling business opportunity by addressing fundamental challenges in semiconductor design: miniaturization, performance, and integration costs. This innovative approach to combining a MOS varactor and a stacked capacitor in a vertically integrated architecture holds significant potential across multiple high-growth markets.\n\n**Market Opportunity Size:**\nThe global market for integrated circuits, particularly those used in wireless communication, IoT, and consumer electronics, is enormous and continues to expand. Within this, the demand for compact, high-performance passive components and tunable elements is insatiable. The market for RF front-end modules, which heavily rely on tunable capacitors and varactors, is projected to grow substantially, driven by 5G and future wireless standards. This patent positions itself to capture a significant share of this expanding need for highly integrated, efficient components. The ability to save silicon real estate translates directly into cost savings per chip, making it attractive for high-volume manufacturing.\n\n**Competitive Advantages:**\n1.  **Superior Miniaturization:** The primary advantage of the Stacked Capacitor Structure is its ability to drastically reduce the footprint of a variable capacitance element. By stacking the capacitor layers above the MOS varactor's gate, it offers a level of compactness superior to traditional planar layouts. This is a critical differentiator in space-constrained applications like smartphones, wearables, and medical implants.\n2.  **Enhanced Performance:** The tight vertical integration minimizes interconnect lengths, leading to reduced parasitic resistance and capacitance. This directly translates to higher Q-factors and improved performance at high frequencies, giving products incorporating this technology a competitive edge in signal integrity and power efficiency, particularly in RF applications.\n3.  **Cost Efficiency:** Smaller chip area means more dies per wafer, driving down manufacturing costs per unit. This cost efficiency, combined with improved performance, creates a strong value proposition for semiconductor manufacturers and original equipment manufacturers (OEMs).\n4.  **Simplified Integration:** By providing a highly integrated component, the Stacked Capacitor Structure simplifies the overall circuit layout and design process for engineers, potentially shortening design cycles and reducing time-to-market for new products.\n\n**Revenue Potential and Business Models:**\nCompanies holding licenses to this technology could generate revenue through:\n*   **Direct Sales:** Manufacturing and selling integrated circuits incorporating this Stacked Capacitor Structure to OEMs.\n*   **Licensing:** Licensing the patent to other semiconductor foundries or fabless companies for integration into their own IC designs.\n*   **Foundry Services:** Offering specialized foundry services to implement this vertical integration for clients.\n*   **IP Monetization:** Royalties from products that utilize this patented technology.\n\nThe potential for increased market share in competitive segments like RFICs and power management units is significant, driven by the compelling performance-to-size ratio.\n\n**Strategic Positioning:**\nCompanies adopting the Stacked Capacitor Structure can strategically position themselves as leaders in high-density integration and high-performance compact electronics. This technology enables them to offer solutions that meet the stringent demands of next-generation wireless standards (5G, 6G), advanced IoT ecosystems, and high-performance computing, where traditional component integration methods are becoming bottlenecks. It allows for the creation of more sophisticated System-on-Chip (SoC) designs with integrated tuning capabilities.\n\n**ROI Projections:**\nInvesting in the development and adoption of the Stacked Capacitor Structure promises a strong return on investment (ROI) due to:\n*   **Reduced BOM Costs:** Lower chip area leads to lower silicon costs per device.\n*   **Improved Product Performance:** Higher Q-factor and better high-frequency operation enable premium pricing and market differentiation.\n*   **Faster Time-to-Market:** Simplified integration and layout can accelerate product development.\n*   **Expanded Market Reach:** Ability to enter new markets or segments requiring ultra-compact, high-performance components.\n\nThe long-term ROI is further bolstered by the foundational nature of this patent, which can serve as a building block for future innovations in semiconductor packaging and integration. The Stacked Capacitor Structure is not just an incremental improvement; it's a strategic enabler for the next wave of electronic device innovation.","faqs":[{"answer":"The **Stacked Capacitor Structure** (US-9853169) is a patented electronic component design that innovatively integrates a MOS varactor and a stacked capacitor. At its core, it describes a semiconductor structure where a Metal-Oxide-Semiconductor (MOS) varactor, which provides voltage-controlled capacitance, is formed in a substrate with its gate positioned over a well. The key innovation is that a stacked capacitor, comprising multiple metal layers, is then built directly above this MOS varactor's gate and electrically connected to it. This entire assembly is also positioned below an inductive element.\n\nThis vertical integration strategy is a significant departure from traditional planar (side-by-side) component layouts. By stacking the capacitor layers on top of the varactor, the invention dramatically reduces the overall physical footprint required for a tunable capacitance element. It's designed to create a more compact, efficient, and higher-performing component for integrated circuits.\n\nThe Stacked Capacitor Structure aims to solve the problem of limited silicon real estate and performance degradation caused by parasitic effects in conventional component integration. It enables engineers to pack more functionality into smaller devices while enhancing electrical characteristics like Q-factor and operating frequency. This makes it a crucial innovation for modern microelectronics.\n\nKeywords: Stacked Capacitor Structure, MOS varactor, stacked capacitor, integrated circuit, semiconductor design, vertical integration, compact electronics.","question":"What is Stacked Capacitor Structure?"},{"answer":"The **Stacked Capacitor Structure** works by leveraging a clever vertical integration approach. First, a MOS varactor is fabricated on a semiconductor substrate. This varactor has a gate, which acts as a control electrode, positioned over a 'well' in the substrate, with source/drain regions on either side. The capacitance of this varactor can be changed by adjusting the voltage applied to its gate.\n\nBuilding upon this, the invention then constructs a stacked capacitor using multiple layers of metal, similar to how layers are built up in a skyscraper. The crucial part is that these metal layers are positioned directly *above* the gate of the MOS varactor. This means the capacitor doesn't sit next to the varactor, but rather on top of it, sharing the vertical space. The stacked capacitor is then electrically connected to the MOS varactor.\n\nThis tight, vertical arrangement has two primary benefits: it significantly reduces the horizontal space (footprint) the combined component occupies on the chip, and it shortens the electrical pathways (interconnects) between the varactor and the capacitor. Shorter interconnects mean less unwanted electrical interference (parasitic resistance and capacitance), leading to better signal quality and higher operating speeds. The entire integrated unit is also designed to be placed below an inductive element, allowing for a complete, compact resonant circuit.\n\nKeywords: Stacked Capacitor Structure, MOS varactor operation, stacked capacitor design, vertical integration, semiconductor manufacturing, parasitic reduction, Q-factor.","question":"How does Stacked Capacitor Structure work?"},{"answer":"The **Stacked Capacitor Structure** patent (US-9853169) primarily solves two critical problems in microelectronics design: silicon real estate limitations and performance degradation due to parasitic effects.\n\n1.  **Silicon Real Estate Limitations:** As electronic devices become smaller and more feature-rich, there's immense pressure to pack more components onto a tiny silicon chip. Traditional methods of integrating essential components like MOS varactors (tunable capacitors) and stacked capacitors involve placing them side-by-side. This planar layout consumes significant horizontal space, leading to larger chip sizes, higher manufacturing costs, and limits on how small and powerful devices can become.\n\n2.  **Performance Degradation from Parasitics:** When components are spread out, the electrical connections (interconnects) between them become longer. These longer wires introduce unwanted electrical characteristics known as 'parasitic resistance' and 'parasitic capacitance.' These parasitics can severely degrade the performance of high-frequency circuits (like those in Wi-Fi and 5G), reducing the Quality (Q) factor, increasing power consumption, and limiting the speed and efficiency of signal processing.\n\nBy vertically integrating the MOS varactor and stacked capacitor, the Stacked Capacitor Structure dramatically reduces the footprint and shortens interconnects. This not only saves valuable chip space but also minimizes performance-sapping parasitics, enabling the creation of smaller, faster, more energy-efficient, and higher-performing electronic devices. It's a key enabler for the next generation of compact electronics.\n\nKeywords: Stacked Capacitor Structure problem, miniaturization, silicon footprint, parasitic effects, performance degradation, RF circuits, integrated circuit challenges, compact design.","question":"What problem does Stacked Capacitor Structure solve?"},{"answer":"The patent for the **Stacked Capacitor Structure**, US-9853169, lists the inventors as [Inventors' names if available in data, otherwise state 'not specified in provided data']. The assignee, the entity to whom the patent rights are legally transferred, is [Assignee name if available, otherwise state 'not specified in provided data'].\n\nWhile the specific individuals or company behind this invention are not detailed in the provided abstract, the act of securing a patent like the Stacked Capacitor Structure typically involves significant research and development efforts by skilled engineers and scientists. These individuals contribute their expertise in semiconductor physics, device design, and fabrication processes to conceive and refine such innovative structures.\n\nThe development of advanced microelectronic components often occurs within large semiconductor companies, research institutions, or specialized design firms that have the resources and expertise to pursue complex R&D projects. The goal is to address existing limitations in technology and create new solutions that drive the industry forward.\n\nKeywords: Stacked Capacitor Structure inventors, patent assignee, US-9853169, semiconductor innovation, R&D, microelectronics development.","question":"Who invented Stacked Capacitor Structure?"},{"answer":"The **Stacked Capacitor Structure** offers several key benefits that are crucial for advancing modern electronics:\n\n1.  **Significant Footprint Reduction:** By vertically integrating the MOS varactor and stacked capacitor, the invention dramatically minimizes the horizontal area required on a silicon chip. This allows for smaller, more compact integrated circuits, enabling the design of thinner smartphones, smaller wearables, and more densely packed IoT devices.\n\n2.  **Enhanced Electrical Performance (Higher Q-factor):** The tight vertical integration leads to much shorter electrical connections between components. This directly reduces unwanted parasitic resistance and capacitance, which are known to degrade signal quality. The result is a higher Quality (Q) factor for the tunable capacitance, leading to cleaner signals, lower power loss, and superior performance in high-frequency applications like 5G and Wi-Fi.\n\n3.  **Improved Power Efficiency:** With reduced parasitic resistance, less energy is wasted as heat during operation. This translates to more power-efficient circuits, extending battery life in mobile and portable devices.\n\n4.  **Simplified Design and Integration:** Providing a compact, pre-integrated component simplifies the complex layout challenges for chip designers. This can accelerate product development cycles, reduce design complexity, and lower manufacturing costs by enabling more dies per wafer. The Stacked Capacitor Structure essentially offers a 'plug-and-play' solution for tunable capacitance in space-constrained designs.\n\nThese benefits collectively make the Stacked Capacitor Structure a highly attractive solution for a wide range of applications demanding both miniaturization and high performance. It pushes the boundaries of what's achievable in semiconductor integration.\n\nKeywords: Stacked Capacitor Structure benefits, footprint reduction, Q-factor improvement, power efficiency, compact ICs, semiconductor integration, design simplification, high-frequency performance.","question":"What are the key benefits of Stacked Capacitor Structure?"},{"answer":"The **Stacked Capacitor Structure** distinguishes itself from prior art primarily through its innovative vertical integration strategy for combining a MOS varactor and a stacked capacitor. Traditional approaches, often referred to as 'prior art,' typically involve planar (side-by-side) arrangements of these components.\n\nIn prior art, a MOS varactor would be placed on the silicon substrate, and a stacked capacitor would be built in separate metal layers elsewhere on the chip. Connecting these disparate components would require routing through multiple metal layers over longer distances. This conventional method results in:\n\n1.  **Larger Footprint:** Each component occupies its own horizontal space, leading to a larger overall area for the combined function.\n2.  **Higher Parasitic Effects:** The longer interconnects between components introduce significant parasitic resistance and capacitance, degrading electrical performance, especially at high frequencies.\n3.  **Increased Layout Complexity:** Designing efficient routing for scattered components is intricate and time-consuming.\n\nIn contrast, the Stacked Capacitor Structure places the stacked capacitor directly *above* the gate of the MOS varactor, creating a compact, three-dimensional unit. This vertical stacking is the fundamental difference. This unique arrangement leads to:\n\n1.  **Dramatic Footprint Reduction:** By leveraging vertical space, the horizontal area needed is significantly minimized.\n2.  **Minimized Parasitics:** The direct, short electrical connections between the vertically aligned components drastically reduce parasitic resistance and capacitance, leading to superior Q-factors and better high-frequency performance.\n3.  **Simplified Integration:** The integrated block simplifies chip layout and design, accelerating development. The explicit positioning below an inductive element also hints at a highly integrated LC-tank, which is much more compact than prior art distributed designs.\n\nEssentially, prior art spread components out, leading to compromises in size and performance, whereas the Stacked Capacitor Structure intelligently stacks them to optimize both.\n\nKeywords: Stacked Capacitor Structure vs prior art, vertical integration, planar integration, MOS varactor, stacked capacitor, parasitic reduction, footprint comparison, IC design differences.","question":"How is Stacked Capacitor Structure different from prior art?"},{"answer":"The **Stacked Capacitor Structure** patent (US-9853169) is poised to significantly impact several key industries that rely heavily on compact, high-performance, and energy-efficient electronic components:\n\n1.  **Wireless Communication:** This includes 5G, 6G, Wi-Fi, and other RF communication systems. The invention's ability to create smaller, higher-Q tunable components is critical for RF front-end modules, transceivers, and frequency synthesizers. This will lead to smaller, more powerful communication devices, better signal quality, and longer battery life in smartphones and network infrastructure.\n\n2.  **Internet of Things (IoT):** IoT devices require ultra-compact and low-power components to operate efficiently for extended periods, often in constrained environments. The Stacked Capacitor Structure can enable more sophisticated functionalities in tiny sensors, wearables, and smart home devices, expanding the capabilities of the IoT ecosystem.\n\n3.  **Consumer Electronics:** Beyond smartphones and wearables, this includes laptops, tablets, and various smart gadgets. The ability to miniaturize components while boosting performance allows for sleeker designs, more features, and improved user experience across the board.\n\n4.  **Automotive Electronics:** Modern vehicles are increasingly packed with advanced driver-assistance systems (ADAS), infotainment, and communication modules. Compact, high-performance tunable components are essential for radar, lidar, and vehicle-to-everything (V2X) communication systems, contributing to safer and smarter cars.\n\n5.  **Medical Devices:** Miniaturization is paramount in implantable and portable medical devices. The Stacked Capacitor Structure can enable smaller, more efficient, and less invasive diagnostic and therapeutic tools.\n\n6.  **Aerospace and Defense:** High-density, reliable, and high-performance electronics are critical for satellite systems, avionics, and defense applications. The benefits of compactness and enhanced RF performance offered by this invention are highly valuable in these sectors.\n\nIn essence, any industry driven by the relentless demand for smaller, faster, and more energy-efficient electronic systems will feel the transformative impact of the Stacked Capacitor Structure.\n\nKeywords: Stacked Capacitor Structure impact, wireless communication, IoT devices, consumer electronics, automotive electronics, medical devices, aerospace, RF technology, compact electronics.","question":"What industries will Stacked Capacitor Structure impact?"},{"answer":"The patent for the **Stacked Capacitor Structure**, identified as US-9853169, was filed on **October 18, 2016**. The filing date is the day on which the patent application was officially submitted to the patent office. This date is important as it typically establishes the 'priority date' for the invention, meaning it's the earliest date from which the invention is considered to exist for patentability purposes.\n\nFollowing the filing, the patent underwent examination by the patent office. After meeting all the necessary legal and technical requirements, the patent was subsequently granted and published on **December 26, 2017**. The publication date marks when the patent document becomes publicly accessible, detailing the invention's claims, description, and drawings.\n\nThe period between the filing and publication dates involves a rigorous process of examination, potential amendments, and responses to office actions from the patent examiner. The relatively quick turnaround from filing to publication (just over a year) suggests that the invention was clear, novel, and non-obvious, or that the application was well-prepared and addressed initial objections efficiently. This timeline underscores the timely recognition of the innovative nature of the Stacked Capacitor Structure in the semiconductor field.\n\nKeywords: Stacked Capacitor Structure filing date, US-9853169 publication date, patent timeline, patent grant, semiconductor patent, intellectual property.","question":"When was Stacked Capacitor Structure filed/granted?"},{"answer":"The **Stacked Capacitor Structure** (US-9853169) opens up a wide array of commercial applications due to its core advantages of miniaturization, enhanced performance, and integration efficiency. Its ability to create compact, high-Q tunable capacitance elements makes it invaluable across numerous product categories:\n\n1.  **Smartphones and Tablets:** Enabling thinner devices, longer battery life through improved power efficiency, and superior RF performance for 5G/6G connectivity, Wi-Fi 6E, and GPS modules. This translates to better user experience and competitive product differentiation.\n\n2.  **Wearable Devices:** Smartwatches, fitness trackers, hearables, and other body-worn sensors can integrate more features and achieve sleeker designs due benefiting from the reduced component footprint and power consumption.\n\n3.  **IoT Devices and Sensors:** Critical for ultra-compact, low-power IoT nodes in smart homes, industrial monitoring, environmental sensing, and asset tracking. The Stacked Capacitor Structure allows for more sophisticated sensing and communication capabilities in tiny, energy-efficient packages.\n\n4.  **RF Front-End Modules (FEMs):** Essential for base stations, transceivers, and other wireless infrastructure components where space is at a premium and high Q-factor is critical for spectral purity and efficiency. This accelerates the deployment of advanced wireless networks.\n\n5.  **Automotive Radar and Communication:** Used in advanced driver-assistance systems (ADAS) for compact radar modules and vehicle-to-everything (V2X) communication systems, contributing to safer and more autonomous vehicles.\n\n6.  **Medical Implants and Portable Diagnostics:** Enabling the creation of smaller, less intrusive, and more energy-efficient medical devices, such as pacemakers, continuous glucose monitors, and miniature imaging systems.\n\n7.  **High-Performance Computing:** While not explicitly mentioned, the principles could extend to high-frequency clocking circuits or resonant power delivery networks where compact, tunable elements are beneficial.\n\nThese commercial applications highlight the broad utility and market potential of the Stacked Capacitor Structure, making it a foundational technology for future electronic product development.\n\nKeywords: Stacked Capacitor Structure commercial applications, smartphones, wearables, IoT, RF FEMs, automotive radar, medical implants, high-performance computing, compact electronics market.","question":"What are the commercial applications of Stacked Capacitor Structure?"},{"answer":"The **Stacked Capacitor Structure** patent (US-9853169) lays a strong foundation for a range of future developments in semiconductor technology, particularly in the realm of 3D integration and high-performance compact electronics:\n\n1.  **Enhanced Integration Density:** Future iterations could explore stacking even more layers or integrating additional active/passive components within the same vertical structure. This could lead to highly functional 'chiplets' that are smaller than current individual components.\n\n2.  **Advanced Materials and Processes:** Research into novel dielectric materials with higher permittivity and lower loss tangents could further boost the capacitance density and Q-factor of the stacked capacitor. Similarly, new metal deposition techniques could improve conductivity and reduce series resistance.\n\n3.  **Dynamic Reconfigurability:** Beyond simple voltage tuning, future developments might incorporate more sophisticated control mechanisms, possibly involving AI or machine learning, to dynamically reconfigure the capacitance or integrate switchable elements within the stack for multi-band or multi-mode operation.\n\n4.  **Integration with Other 3D Technologies:** The Stacked Capacitor Structure could be combined with other emerging 3D IC technologies, such as Through-Silicon Vias (TSVs), to create even more complex and densely integrated systems-on-chip or system-in-package solutions.\n\n5.  **Thermal Management Solutions:** As vertical integration increases density, managing heat dissipation becomes critical. Future developments might include integrated micro-coolers or novel thermal pathways within the stacked structure to maintain optimal operating temperatures.\n\n6.  **Specialized Applications:** Tailored versions of the Stacked Capacitor Structure could emerge for specific high-frequency applications (e.g., terahertz communication), quantum computing (for controlling qubits), or high-power applications (e.g., compact power converters).\n\nThe principles of the Stacked Capacitor Structure are likely to serve as a blueprint for continued innovation in vertical integration, pushing the boundaries of miniaturization and performance across the entire microelectronics industry. It represents a strategic step towards a future where electronic systems are more integrated, efficient, and versatile than ever before.\n\nKeywords: Stacked Capacitor Structure future, 3D integration, advanced materials, dynamic reconfigurability, TSV integration, thermal management, specialized applications, microelectronics roadmap.","question":"What are the future developments expected for Stacked Capacitor Structure?"}],"topics":["Stacked Capacitor Structure","MOS varactor","stacked capacitor","integrated circuit","semiconductor design","technical","background","modern"],"tech_cluster":null},"seo":{"title":"Stacked Capacitor Structure - Compact IC Design US-9853169","description":"Discover the Stacked Capacitor Structure patent (US-9853169) for compact, high-performance integrated circuits. Vertical integration of MOS varactor and stacked capacitor for RF applications.","keywords":["Stacked Capacitor Structure","MOS varactor","stacked capacitor","integrated circuit","semiconductor design","RF circuits","compact electronics","variable capacitance","microelectronics","H01L","patent US-9853169"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853169","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853169","citation_suggestion":"Patentable. \"Stacked capacitor structure\" (US-9853169). https://patentable.app/patents/US-9853169","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853169","json":"https://patentable.app/api/llm-context/US-9853169","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:38:07.567Z"}