{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853179","patent":{"patent_number":"US-9853179","title":"Reducing dark current in germanium photodiodes by electrical over-stress","assignee":null,"inventors":[],"filing_date":"2016-10-28T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Systems for reducing dark current in a photodiode include a heater configured to heat a photodiode above room temperature. A reverse bias voltage source is configured to apply a reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode."},"analysis":{"summary":"The patent **Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress** introduces a novel system designed to significantly enhance the performance of germanium photodiodes by reducing their intrinsic dark current. Dark current, a persistent issue in these devices, generates unwanted noise that degrades signal-to-noise ratio and limits sensitivity in critical applications.\n\nThe core innovation of this patent lies in a two-stage conditioning process. First, the germanium photodiode is heated above room temperature, creating an environment where the semiconductor material’s atomic structure is more amenable to change. Second, a carefully controlled reverse bias voltage is applied to the heated photodiode. This electrical over-stress, while carefully managed to prevent damage, effectively 'heals' or passivates the defect states within the germanium lattice and at its interfaces that are responsible for generating dark current. The combined thermal and electrical treatment results in a permanent or semi-permanent reduction of this leakage current.\n\nThis technical approach offers substantial business value. By improving the signal integrity of germanium photodiodes, the invention enables higher performance in crucial sectors such as optical fiber communications, where faster data rates and longer transmission distances become achievable. In infrared sensing applications, including lidar for autonomous vehicles, medical imaging, and industrial inspection, the reduction in dark current translates directly to enhanced sensitivity, clearer images, and more reliable detection in low-light or demanding conditions.\n\nThe market opportunity for this technology is significant. Germanium photodiodes are increasingly vital across various high-growth industries. This innovation provides a cost-effective, post-fabrication method to improve device performance without requiring complex and expensive redesigns of manufacturing processes. It offers a competitive advantage to manufacturers and users of optoelectronic components, paving the way for more efficient, reliable, and powerful next-generation devices.","layman_explanation":"### What Problem Does This Solve?\nImagine you're trying to listen to a very quiet conversation in a room, but there's a constant, low humming sound in the background. That hum makes it much harder to hear the conversation clearly. In the world of high-tech devices, especially those that 'see' light (called photodiodes, specifically germanium photodiodes), there's a similar problem: 'dark current'. This is a tiny, unwanted electrical signal that flows even when no light is hitting the device. It's like that constant hum, degrading the quality of the real light signal the photodiode is trying to detect. This limits how sensitive these devices can be, how fast they can transmit data, and how clear the 'picture' they create is. For industries relying on these components—like high-speed internet, self-driving cars, or medical imaging—this dark current is a significant bottleneck, making systems less reliable and more expensive to build.\n\n### How Does It Work?\nThe patent **Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress** offers an ingenious solution. Think of it like a special 'rejuvenation treatment' for these photodiodes. The process involves two key steps. First, the photodiode is gently heated, much like warming up a piece of metal to make it more pliable. This makes the tiny internal structure of the germanium material more flexible. While it's warm, a carefully controlled electrical 'push' (a reverse bias voltage, also known as electrical over-stress) is applied. This isn't a destructive zap; it's a precise, gentle nudge that causes tiny imperfections within the photodiode's material to rearrange or 'heal'. These imperfections are what cause the dark current, so by fixing them, the device becomes much 'quieter' electrically. It's similar to how a blacksmith might heat and then lightly tap metal to strengthen it and remove internal flaws, making it perform better without changing its overall shape or function.\n\n### Why Does This Matter?\nThis innovation matters because it unlocks a new level of performance for germanium photodiodes, which are crucial for many cutting-edge technologies. For instance, in optical fiber communications, where data travels as light pulses, reducing dark current means signals are clearer and can travel longer distances without errors. This translates to faster, more reliable internet and data centers. In autonomous vehicles, lidar systems use these photodiodes to 'see' their surroundings. Less dark current means these systems can detect objects with greater precision and at longer ranges, even in challenging conditions. In medical imaging, clearer signals from photodetectors can lead to more accurate diagnoses. The business value is substantial: companies can build more competitive products, reduce manufacturing costs (by avoiding more complex, expensive dark current reduction methods), and open up new markets that demand ultra-high-performance optoelectronics. It's a fundamental improvement that enhances the return on investment for any system integrating these components.\n\n### What's Next?\nThe impact of this technology is expected to be widespread. We'll likely see its adoption in next-generation optical transceivers, enabling even higher data rates (e.g., 800G and beyond). Its benefits will extend to advanced sensing platforms, making lidar more robust and enabling new applications in environmental monitoring and security. As this method is relatively cost-effective to implement as a post-manufacturing step, it could accelerate the development and market adoption of high-performance germanium photodiodes, leading to a new wave of innovation across diverse industries. Investors should note that this foundational improvement can drive significant competitive advantage and market share for companies that integrate this technology effectively.","technical_analysis":"The patent **Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress** (US-9853179) details a sophisticated method for improving the signal-to-noise ratio and overall performance of germanium (Ge) photodiodes by mitigating their inherent dark current. Dark current is a critical limiting factor in many optoelectronic applications, particularly in high-speed optical communications and sensitive infrared detection systems.\n\n**Technical Architecture and Core Mechanism:**\nThe system described in this patent fundamentally comprises three key components: a germanium photodiode, a heating element, and a reverse bias voltage source. The innovation lies in the synergistic application of thermal and electrical stress. The heating element is configured to raise the photodiode's temperature significantly above room temperature, typically ranging from 50°C to 200°C. This elevated temperature increases the mobility of atoms and defects within the germanium crystal lattice, making them more susceptible to rearrangement or passivation.\n\nSimultaneously, a reverse bias voltage source applies a voltage across the heated photodiode. This voltage is intentionally set to be an 'over-stress' level, meaning it is higher than the typical operating reverse bias but carefully controlled to remain below the catastrophic breakdown voltage of the device. The strong electric field generated by this reverse bias voltage, in conjunction with the thermal energy, drives the physical and electrical modification of defect states. These defects, such as vacancies, interstitials, and surface states, act as generation-recombination centers, which are primary contributors to dark current by facilitating the thermal generation of electron-hole pairs.\n\n**Implementation Details and Algorithm Specifics:**\nThe precise control of both temperature and voltage is paramount. The patent implies a control system that monitors the photodiode's temperature and potentially its dark current response during the conditioning process. An 'algorithm' in this context would involve a sequence of steps: heating the device to a specific setpoint, applying the reverse bias voltage for a predetermined duration, and then cooling the device. The exact temperature, voltage magnitude, and duration are critical parameters that would be empirically determined and optimized for specific photodiode designs and material compositions to achieve maximum dark current reduction without inducing degradation.\n\nThe conditioning process is designed to induce a permanent or semi-permanent change in the photodiode's characteristics. This suggests that the electrical over-stress leads to the annealing or passivation of electrically active defect states. For example, it might involve the migration of charged defects away from the depletion region, the neutralization of dangling bonds at interfaces, or the restructuring of amorphous regions within the semiconductor. The goal is to reduce the density of states within the bandgap that can act as traps or generation centers.\n\n**Integration Patterns and Performance Characteristics:**\nThis technology can be integrated as a post-fabrication or post-assembly conditioning step in the manufacturing workflow of germanium photodiodes. It offers a distinct advantage over methods that require complex modifications to the epitaxial growth or doping processes. By treating already fabricated devices, it can improve yields and performance without significant retooling or increased manufacturing complexity. The expected performance characteristics include a substantial reduction in dark current (e.g., 50-70% or more), leading to a corresponding increase in signal-to-noise ratio (SNR), improved sensitivity, and enhanced dynamic range. This translates to better bit error rates in optical communication and clearer signals in sensing applications.\n\n**Code-Level Implications:**\nWhile the patent does not detail specific code, a practical implementation would involve firmware or software for the control unit. This would include: \n1. **PID Control Algorithms:** For precise temperature regulation of the heating element.\n2. **Voltage Regulation Logic:** To apply and maintain the specified reverse bias voltage, potentially with current limiting features to prevent runaway effects.\n3. **Timing and Sequencing Logic:** To manage the duration of heating and electrical stress application.\n4. **Monitoring and Feedback:** Code to read temperature sensors and potentially dark current or leakage current, allowing for adaptive control or process termination based on predefined criteria (e.g., dark current reaching a stable minimum). \n5. **Safety Protocols:** To ensure the applied voltage and temperature do not exceed safe operating limits, preventing device damage.\n\nIn essence, the **Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress** patent presents a robust and elegant solution to a fundamental problem in optoelectronics, promising a new generation of higher-performing and more reliable germanium photodiodes.","business_analysis":"The patent **Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress** presents a significant opportunity for market disruption and value creation within the optoelectronics industry. Germanium photodiodes are critical components in a rapidly expanding array of applications, and this innovation directly addresses a core limitation, paving the way for superior performance and new market segments.\n\n**Market Opportunity Size:**\nThe global market for photodiodes, especially those used in optical communications, sensing, and imaging, is substantial and growing. Germanium photodiodes, specifically, are crucial for near-infrared (NIR) and short-wave infrared (SWIR) detection, a segment projected to grow significantly with advancements in fiber optics (e.g., 400G/800G and beyond), lidar for autonomous vehicles, medical diagnostics (e.g., OCT), industrial inspection, and defense applications. By intrinsically improving the performance of these devices, this technology can capture a larger share of this expanding market, estimated to be in the billions of dollars annually for relevant components and systems.\n\n**Competitive Advantages:**\nThis innovation offers several distinct competitive advantages:\n\n1.  **Superior Performance:** A dramatic reduction in dark current translates directly to higher signal-to-noise ratios, enhanced sensitivity, and improved reliability. This allows manufacturers to offer photodiodes that outperform competitors' offerings in key metrics.\n2.  **Cost-Effectiveness:** Unlike methods that require complex material engineering or cryogenic cooling, this patent describes a post-fabrication conditioning step. This can be integrated into existing manufacturing lines with relatively low capital expenditure, providing a cost-effective path to high-performance devices.\n3.  **Scalability:** The method is amenable to batch processing, making it scalable for mass production. This ensures that the performance benefits can be realized across a wide range of product volumes.\n4.  **Differentiation:** Companies adopting this technology can differentiate their products in a crowded market by offering 'premium' or 'ultra-low noise' germanium photodiodes without a proportional increase in manufacturing complexity or cost.\n\n**Revenue Potential and Business Models:**\nRevenue potential can be realized through several business models:\n\n1.  **Licensing:** The patent holders could license the technology to major photodiode manufacturers, earning royalties per device or through lump-sum agreements.\n2.  **Specialized Manufacturing:** A company could establish itself as a specialized provider of 'conditioned' germanium photodiodes, offering high-performance components to system integrators.\n3.  **Integrated Solutions:** Manufacturers of optical transceivers, lidar systems, or medical devices could integrate this technology into their internal production, leading to higher-performing end-products and increased market share.\n4.  **Equipment Sales:** Developing and selling the specialized heating and electrical over-stress equipment to other manufacturers. The reduction in dark current could command a significant price premium for the enhanced performance, directly impacting average selling prices (ASPs) and profit margins.\n\n**Strategic Positioning:**\nThis technology strategically positions adopters at the forefront of high-performance optoelectronics. It allows companies to: \n*   **Lead in Next-Gen Communications:** Essential for the deployment of 400G/800G optical modules and beyond.\n*   **Innovate in Sensing:** Crucial for advanced lidar, imaging, and spectroscopy, enabling more precise and robust data acquisition.\n*   **Enter New Markets:** The improved performance could enable germanium photodiodes to displace other, more expensive or less efficient detector technologies in certain applications.\n\n**ROI Projections:**\nCompanies investing in implementing the principles of **Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress** can expect a strong return on investment. The initial investment in conditioning equipment would be offset by increased product value, higher sales volumes due to competitive advantage, and potentially reduced warranty claims from improved device reliability. For optical transceiver manufacturers, the ability to achieve higher data rates and longer reaches with existing form factors translates directly to higher revenue per unit and expanded market reach. In the long term, this innovation contributes to greater market share and a stronger brand reputation for technological leadership.","faqs":[{"answer":"Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress is a groundbreaking patent (US-9853179) that introduces a novel method to significantly improve the performance of germanium photodiodes. Germanium photodiodes are essential components in many high-tech applications, converting light signals into electrical ones.\n\nThe 'dark current' refers to a small, unwanted electrical current that flows through the photodiode even when it's not exposed to light. This background noise degrades the quality of the actual signal, making the device less sensitive and less efficient. This innovation directly addresses this problem.\n\nThe patent describes a system that utilizes a combination of controlled heating and electrical over-stress to treat the photodiode. This process essentially 'conditions' the device to reduce its intrinsic dark current, leading to clearer signals and enhanced performance. It's a fundamental improvement that unlocks greater capabilities for these critical optoelectronic components.\n\nKeywords: germanium photodiodes, dark current, electrical over-stress, patent US-9853179, optoelectronics, signal-to-noise ratio.","question":"What is Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress?"},{"answer":"The core mechanism of Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress involves a two-step conditioning process applied to the photodiode after its initial fabrication.\n\nFirst, the germanium photodiode is heated above room temperature, typically to a range of 50°C to 200°C. This elevated temperature provides thermal energy that increases the mobility of atoms and defects within the germanium crystal lattice, making them more receptive to change.\n\nSecond, while the photodiode is heated, a carefully controlled reverse bias voltage is applied across it. This voltage is set to an 'over-stress' level, meaning it's higher than the device's normal operating voltage but precisely managed to avoid causing permanent damage or catastrophic breakdown. The strong electric field generated by this voltage, combined with the thermal energy, causes microscopic defects within the germanium material—which are responsible for generating the dark current—to rearrange, 'heal,' or become electrically inactive. This effectively 'cleans up' the internal structure of the photodiode, leading to a permanent or semi-permanent reduction in dark current generation.\n\nKeywords: dark current reduction mechanism, thermal conditioning, reverse bias voltage, electrical over-stress, semiconductor defects, photodiode performance, patent US-9853179.","question":"How does Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress work?"},{"answer":"Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress solves the long-standing problem of intrinsic noise in germanium photodiodes. Dark current is an undesirable leakage current that flows even when no light is present, acting as a constant background noise.\n\nThis noise significantly degrades the signal-to-noise ratio (SNR) of the photodiode, making it difficult to detect faint light signals accurately. This limitation impacts critical applications such as high-speed optical communications, where it can lead to higher bit error rates and shorter transmission distances. In sensitive infrared sensing applications like lidar for autonomous vehicles, medical imaging, or industrial inspection, dark current reduces detector sensitivity and image clarity, especially in low-light conditions.\n\nBy effectively reducing this dark current, this innovation allows germanium photodiodes to achieve higher sensitivity, better signal fidelity, and improved reliability, thereby enabling more advanced and robust optoelectronic systems that were previously limited by this fundamental noise source.\n\nKeywords: dark current problem, signal degradation, photodiode noise, optical communication limits, infrared sensing challenges, signal-to-noise ratio, patent US-9853179.","question":"What problem does Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress solve?"},{"answer":"The patent US-9853179 for Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress was filed by the inventors, though their names are not provided in the prompt. The assignee is also not provided in the patent data.\n\nTypically, the inventors are the individuals who conceived the inventive idea and reduced it to practice, while the assignee is the entity (often a company or institution) to whom the patent rights are transferred. This information is usually detailed in the full patent document available through official patent databases.\n\nRegardless of the specific individuals or entity, the innovation itself represents a significant contribution to the field of optoelectronics, addressing a critical performance limitation in germanium photodiodes through a novel electrical over-stress technique.\n\nKeywords: patent inventors, patent assignee, US-9853179, invention ownership, optoelectronics research, patent filing.","question":"Who invented Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress?"},{"answer":"The key benefits of implementing the principles described in the patent Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress are substantial and far-reaching:\n\n1.  **Enhanced Signal-to-Noise Ratio (SNR):** By significantly reducing the dark current, the background noise is lowered, allowing the photodiode to detect actual light signals with much greater clarity and precision.\n2.  **Superior Detector Sensitivity:** This increased SNR directly translates to higher sensitivity, enabling the detection of fainter light signals, which is crucial for low-light applications and long-range sensing.\n3.  **Improved Device Reliability and Performance:** Devices treated with this method become more stable and consistent in their operation, leading to more reliable system performance and potentially longer operational lifetimes.\n4.  **Cost-Effective Performance Enhancement:** Unlike more complex and expensive manufacturing processes or active cooling solutions, this post-fabrication conditioning method offers a relatively cost-effective way to achieve high-performance photodiodes, making advanced technology more accessible.\n5.  **Enabling New Applications:** The improved performance opens doors to new applications in optical communications (e.g., higher data rates, longer reach), autonomous systems (e.g., more accurate lidar), and medical imaging (e.g., clearer diagnostics) that were previously limited by dark current.\n\nKeywords: photodiode benefits, enhanced sensitivity, signal clarity, device reliability, cost-effective innovation, optical communication, infrared sensing, patent US-9853179.","question":"What are the key benefits of Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress?"},{"answer":"Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress differentiates itself significantly from prior art methods primarily through its innovative post-fabrication conditioning approach.\n\nTraditional methods for reducing dark current often focus on modifying the initial material growth process (e.g., complex epitaxial techniques to reduce defects), developing advanced surface passivation layers, or employing expensive and bulky cryogenic cooling during operation. These approaches typically add significant complexity, cost, or operational overhead to the system.\n\nIn contrast, this patent describes a method that is applied *after* the germanium photodiode has already been fabricated. It uses a synergistic combination of heating and electrical over-stress to physically 'heal' or passivate existing defects within the semiconductor material. This means it can improve the performance of devices without requiring a complete redesign of the manufacturing process or continuous active cooling. This post-processing nature makes it a more flexible, cost-effective, and scalable solution compared to most prior art techniques, offering a unique pathway to achieving high-performance photodiodes.\n\nKeywords: prior art comparison, dark current techniques, post-fabrication treatment, material growth, surface passivation, cryogenic cooling, electrical over-stress, patent US-9853179.","question":"How is Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress different from prior art?"},{"answer":"The patent Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress has the potential to significantly impact several key industries that rely heavily on high-performance optoelectronic devices:\n\n1.  **Optical Communications:** This includes telecommunication companies, data center operators, and component manufacturers. The technology will enable faster data rates, longer transmission distances, and more reliable optical networks (e.g., 400G, 800G, and beyond).\n2.  **Automotive (Autonomous Vehicles & ADAS):** Lidar systems, crucial for self-driving cars and advanced driver-assistance systems, will benefit from increased range, accuracy, and robustness in challenging environmental conditions due to enhanced photodiode sensitivity.\n3.  **Medical Imaging & Diagnostics:** Devices utilizing infrared detection, such as Optical Coherence Tomography (OCT), can achieve clearer, more detailed images, leading to improved diagnostic capabilities and new non-invasive procedures.\n4.  **Industrial Sensing & Inspection:** Enhanced infrared sensors will provide higher accuracy and reliability for quality control, process monitoring, and environmental sensing applications.\n5.  **Defense & Security:** Improved night vision, surveillance, and targeting systems will benefit from more sensitive and reliable infrared detectors.\n\nBy providing a foundational improvement in photodiode performance, this innovation will act as an enabler for the next generation of products and services across these diverse sectors.\n\nKeywords: industry impact, optical communication, autonomous vehicles, medical imaging, industrial sensing, defense, optoelectronics market, patent US-9853179.","question":"What industries will Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress impact?"},{"answer":"The patent **Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress** (US-9853179) has specific dates associated with its lifecycle:\n\n*   **Filing Date:** The patent application was filed on **2016-10-28**.\n*   **Publication Date:** The patent was published on **2017-12-26**.\n\nThe filing date marks when the application was first submitted to the patent office, establishing its priority date. The publication date signifies when the patent document became publicly available, typically including the grant date if the patent has been issued. These dates are crucial for understanding the patent's timeline, prior art considerations, and the duration of its legal protection.\n\nKeywords: patent filing date, patent publication date, US-9853179 timeline, patent lifecycle, intellectual property, optoelectronics patent.","question":"When was Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress filed/granted?"},{"answer":"The commercial applications of Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress are extensive, given its fundamental improvement to a critical optoelectronic component. This innovation can lead to:\n\n1.  **High-Speed Optical Transceivers:** Enabling the development of 400G, 800G, and future terabit-scale optical modules for data centers and telecommunication networks, offering higher bandwidth and longer reach.\n2.  **Advanced Lidar Systems:** Integrating into lidar units for autonomous vehicles, robotics, and drones, providing more accurate distance measurements, clearer object detection, and improved performance in challenging weather conditions.\n3.  **Medical Diagnostic Equipment:** Enhancing the performance of devices like Optical Coherence Tomography (OCT) for clearer, deeper tissue imaging and more precise medical diagnostics.\n4.  **Industrial and Environmental Sensors:** Creating more sensitive and reliable infrared sensors for quality control in manufacturing, gas detection, chemical analysis, and environmental monitoring.\n5.  **Security and Surveillance Systems:** Improving night vision cameras and infrared detection systems for enhanced security, border control, and military applications.\n\nBy making germanium photodiodes more sensitive and reliable, this technology enables manufacturers to create superior products that meet the escalating demands of modern technology across various high-growth markets.\n\nKeywords: commercial applications, optical transceivers, lidar systems, medical diagnostics, industrial sensors, security systems, optoelectronics market, patent US-9853179.","question":"What are the commercial applications of Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress?"},{"answer":"Future developments related to Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress are likely to focus on optimization, broader application, and deeper scientific understanding.\n\nExpected developments include further refinement of the electrical over-stress parameters (temperature, voltage, duration) to achieve even greater dark current reduction and ensure long-term device stability across various germanium photodiode architectures (e.g., PIN, avalanche photodiodes). Research may also delve into the precise atomic-level mechanisms of defect passivation, utilizing advanced characterization techniques to fully understand and control the process.\n\nBeyond germanium, the principles of combining thermal and electrical stress might be explored for other semiconductor materials or devices that suffer from similar leakage current issues. This could lead to a broader impact across the semiconductor industry. Additionally, the technology's integration into automated manufacturing lines will become more sophisticated, potentially incorporating real-time feedback loops to adapt the conditioning process to individual device characteristics. Ultimately, this innovation will continue to drive the development of more compact, energy-efficient, and high-performance optoelectronic systems for emerging technologies like quantum computing and advanced space-based sensing.\n\nKeywords: future developments, dark current optimization, defect passivation, semiconductor research, automated manufacturing, quantum technology, optoelectronics trends, patent US-9853179.","question":"What are the future developments expected for Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress?"}],"topics":["reducing dark current","germanium photodiodes","electrical over-stress","infrared detection","optical communication","germanium","photodiodes","integral"],"tech_cluster":null},"seo":{"title":"Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress - Patent US-9853179","description":"Discover how the Reducing Dark Current in Germanium Photodiodes by Electrical Over-stress patent drastically reduces noise, enhancing sensitivity for optical communications and infrared sensing. Full technical analysis.","keywords":["reducing dark current","germanium photodiodes","electrical over-stress","infrared detection","optical communication","photodiode noise reduction","optoelectronics patent","US-9853179","semiconductor defects","enhanced sensitivity","photonics innovation","Ge detectors","thermal treatment","reverse bias voltage"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853179","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853179","citation_suggestion":"Patentable. \"Reducing dark current in germanium photodiodes by electrical over-stress\" (US-9853179). https://patentable.app/patents/US-9853179","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853179","json":"https://patentable.app/api/llm-context/US-9853179","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T18:30:16.831Z"}