{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853206","patent":{"patent_number":"US-9853206","title":"Precessional spin current structure for MRAM","assignee":null,"inventors":[],"filing_date":"2015-07-30T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":17,"abstract":"A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic layer in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate."},"analysis":{"summary":"The patent titled \"Precessional Spin Current Structure for Mram\" (US-9853206) discloses a significant advancement in Magnetoresistive Random-Access Memory (MRAM) technology. The core innovation revolves around enhancing the performance of the free layer within the MRAM's magnetic tunnel junction (MTJ) stack.\n\nThe primary problem this invention solves is the inherent limitations in switching speed, energy efficiency, and reliability often encountered in conventional MRAM designs. Existing methods for manipulating the free layer's magnetization can require higher currents or suffer from slower switching times, hindering MRAM's potential as a universal memory solution.\n\nThe key technical approach involves integrating a novel precessional spin current (PSC) magnetic layer. This PSC layer is specifically designed to work in conjunction with a perpendicular MTJ, a configuration known for its thermal stability and scalability. Crucially, the in-plane magnetization direction of the PSC magnetic layer is engineered to be free to rotate. This dynamic precessional motion allows for a more efficient and deterministic transfer of angular momentum to the free layer, facilitating robust and faster magnetization switching with reduced energy consumption.\n\nThe business value and applications of this technology are substantial. Improved MRAM performance translates directly into more powerful and energy-efficient computing devices across various sectors. This includes high-performance computing, artificial intelligence accelerators, edge computing, Internet of Things (IoT) devices, and embedded systems. The enhanced speed, lower power usage, and increased endurance make this MRAM design an attractive alternative or complement to existing memory types like SRAM, DRAM, and NAND flash.\n\nFrom a market opportunity perspective, this innovation positions MRAM to capture a larger share of the global memory market, which is constantly seeking non-volatile, high-speed, and low-power solutions. Companies adopting this technology could gain a competitive edge by offering superior memory products, driving down operational costs for data centers, and enabling new capabilities in portable and autonomous devices. This patent represents a critical step towards realizing MRAM's full potential as a truly universal and highly efficient memory.","layman_explanation":"### What Problem Does This Solve?\nImagine your computer's memory as a librarian. Traditional memory (like RAM) is super fast but forgets everything when the power goes off – like a librarian who goes home and forgets all the books. Other memory (like flash drives) remembers everything, but it's much slower – like a librarian who takes ages to find a book. Magnetoresistive Random-Access Memory (MRAM) is designed to be the best of both worlds: fast *and* never forgets. However, a key part of MRAM, called the 'free layer' in its 'magnetic tunnel junction,' has been challenging to make both super fast and super reliable without using too much power. This patent, the Precessional Spin Current Structure for Mram, tackles this precise problem, aiming to unlock MRAM's full potential by making this crucial 'free layer' perform much better.\n\n### How Does It Work?\nThink of MRAM storing information by tiny magnets pointing up or down (representing 0s and 1s). To change a 0 to a 1, you need to 'flip' the magnet. Older methods are like trying to push a stubborn door open – it takes a lot of force (power) and isn't always smooth. This invention introduces a clever trick. It adds a special 'spinning' magnet next to the main memory magnet. This 'spinning' magnet creates a dynamic, almost 'wiggling' effect, like a tiny tornado of magnetic force (a 'precessional spin current').\n\nCrucially, this spinning magnet is designed to let its 'spin' direction rotate freely in a plane. This freedom allows it to interact with the main memory magnet in a much more efficient and gentle way. Instead of a hard push, it's more like a precise, rhythmic nudge that makes the memory magnet flip quickly and with very little energy. It's akin to how a perfectly timed push on a swing makes it go higher with less effort. This 'wiggling' interaction works especially well with a type of MRAM called 'perpendicular MTJ,' which is known for being very stable and good for making small, dense memory chips.\n\n### Why Does This Matter?\nThis Precessional Spin Current Structure for Mram patent matters because it makes MRAM a much more viable and powerful memory solution. For businesses and consumers, this translates into several key benefits:\n*   **Faster Devices:** Computers, smartphones, and smart devices could boot up quicker, run applications more smoothly, and process data at lightning speeds.\n*   **Longer Battery Life:** Less power used for memory means devices can last significantly longer on a single charge, which is critical for mobile devices and IoT sensors.\n*   **More Reliable Systems:** The improved switching mechanism makes memory more robust and less prone to errors, which is vital for critical applications like automotive systems, medical devices, and data center servers.\n*   **Cost Savings:** For large-scale operations like data centers, reduced power consumption across thousands of servers can lead to substantial energy cost savings.\n*   **New Capabilities:** This enhanced MRAM could enable entirely new types of computing, especially in areas like Artificial Intelligence and edge computing, where fast, persistent, and low-power memory is essential.\n\n### What's Next?\nThis innovation paves the way for the widespread adoption of MRAM as a true 'universal memory.' We can expect to see companies integrating this technology into their next-generation processors and memory modules, leading to a new era of high-performance, energy-efficient electronics. The market adoption timeline will depend on manufacturing scaling and economic factors, but the underlying technical breakthrough significantly de-risks MRAM development. Investors will be keenly watching for companies that successfully commercialize this approach, as it holds the potential for substantial returns in the rapidly evolving semiconductor landscape.","technical_analysis":"The patent US-9853206, titled \"Precessional Spin Current Structure for Mram,\" presents a sophisticated technical solution aimed at significantly improving the free layer performance within Magnetoresistive Random-Access Memory (MRAM) devices. This analysis delves into the technical architecture, implementation details, and performance characteristics of this innovation.\n\n**Technical Architecture:**\nThe core of this invention is an MRAM device featuring a magnetic tunnel junction (MTJ) stack. A standard MTJ consists of a fixed magnetic layer, a non-magnetic tunnel barrier (typically MgO), and a free magnetic layer. The resistance of the MTJ depends on the relative magnetization directions of the fixed and free layers, allowing for binary data storage. The innovation here lies in the introduction of a precessional spin current (PSC) magnetic layer. This PSC layer is integrated into the MTJ stack, specifically designed to interact with a perpendicular MTJ (p-MTJ). The p-MTJ configuration is crucial as it offers higher thermal stability and better scalability compared to in-plane MTJs, due to its perpendicular magnetic anisotropy (PMA).\n\nThe most distinctive feature of the PSC layer is that its in-plane magnetization direction is *free to rotate*. This design choice is fundamental to the mechanism by which the invention achieves improved free layer switching. The PSC layer is typically a ferromagnetic material with specific anisotropy properties that allow for this facile rotation under external stimuli, such as an applied current or magnetic field.\n\n**Implementation Details and Algorithm Specifics:**\nThe operational principle leverages the dynamic manipulation of spin currents. When an electrical current is passed through or near the PSC layer, it induces a precessional motion in the PSC layer's magnetization. This precessional motion, in turn, generates a highly efficient spin current that is then injected into or interacts with the free layer of the p-MTJ. The key 'algorithm' or physical mechanism at play is the transfer of angular momentum from the precessing PSC layer to the free layer. This transfer facilitates a more deterministic and energy-efficient switching of the free layer's magnetization direction.\n\nUnlike traditional spin-transfer torque (STT) or spin-orbit torque (SOT) mechanisms, which rely on a direct, often static, torque, this approach utilizes a *dynamic* spin current. The precessional nature allows for a more adiabatic and resonant transfer of angular momentum, potentially lowering the critical current required for switching. The free rotation of the PSC layer's in-plane magnetization allows for optimal alignment or interaction geometry for the spin current generation, which can be dynamically tuned or passively optimized by the material properties and device geometry.\n\n**Integration Patterns and Performance Characteristics:**\nIntegration of the PSC layer would involve advanced thin-film deposition techniques, ensuring precise control over material interfaces and magnetic properties. The PSC layer needs to be engineered to have a sufficiently low coercivity and anisotropy to enable easy in-plane rotation, while also being magnetically coupled to the free layer to efficiently transfer spin angular momentum. The perpendicular MTJ structure provides excellent thermal stability, which is vital for data retention and device reliability, especially at higher temperatures and smaller dimensions.\n\nFrom a performance standpoint, this technology promises several key improvements:\n*   **Reduced Switching Current:** The efficient angular momentum transfer means a lower critical current density is required to switch the free layer, leading to reduced power consumption during write operations.\n*   **Faster Switching Speed:** The dynamic precessional mechanism can enable quicker and more deterministic switching events, improving write speeds.\n*   **Enhanced Endurance:** Lower operating currents and more controlled switching reduce degradation mechanisms (e.g., breakdown of the tunnel barrier) typically associated with high current densities, thereby extending the device's operational lifespan.\n*   **Improved Scalability:** The compatibility with perpendicular MTJs ensures that this architecture can be scaled down to advanced technology nodes, supporting higher memory densities.\n\n**Code-level Implications:**\nWhile MRAM is hardware-centric, this invention impacts firmware and software at the lowest levels. Developers working on MRAM controllers would need to optimize write pulses and timing sequences to fully leverage the precessional spin current mechanism. This might involve finely tuned current pulse shapes or durations to initiate and control the precessional motion and subsequent switching, potentially differing from those used for STT-MRAM or SOT-MRAM. The improved reliability and speed would allow for more aggressive memory access patterns and potentially simpler error correction code (ECC) implementations due to reduced bit error rates. This could lead to more efficient memory management unit (MMU) designs and better overall system performance for applications heavily reliant on non-volatile storage.","business_analysis":"The patent \"Precessional Spin Current Structure for Mram\" (US-9853206) introduces a significant advancement in Magnetoresistive Random-Access Memory (MRAM) technology, holding substantial implications for various industries and presenting compelling business opportunities for investors and corporations alike.\n\n**Market Opportunity Size:**\nThe global memory market is a multi-billion dollar industry, with MRAM projected to grow significantly as a 'universal memory' solution. This patent directly addresses key performance bottlenecks, making MRAM more competitive against established memory types like DRAM, SRAM, and NAND flash. The market opportunity spans embedded memory (e.g., microcontrollers, IoT devices), enterprise storage (e.g., data centers, servers), automotive electronics (e.g., ADAS, infotainment), and high-performance computing (e.g., AI accelerators, gaming). By improving MRAM's core performance, this innovation expands its addressable market and accelerates its adoption, potentially unlocking a market segment worth tens of billions of dollars annually as MRAM replaces or complements existing solutions.\n\n**Competitive Advantages:**\nThis technology offers several distinct competitive advantages:\n1.  **Superior Performance:** The enhanced free layer dynamics lead to MRAM devices with faster write speeds, lower power consumption, and higher endurance compared to prior art. This is a crucial differentiator in performance-sensitive applications.\n2.  **Energy Efficiency:** Reduced switching currents translate directly into lower operational costs for data centers and extended battery life for portable devices, a significant selling point in an energy-conscious market.\n3.  **Scalability:** Compatibility with perpendicular MTJs ensures the technology can be scaled to smaller process nodes, allowing for higher density MRAM chips, which is vital for future-proof product roadmaps.\n4.  **Reliability:** Improved endurance and deterministic switching lead to more robust memory devices, reducing failure rates and total cost of ownership.\n\n**Revenue Potential and Business Models:**\nCompanies that license or implement this technology can generate revenue through several avenues:\n*   **Direct Product Sales:** Manufacturing and selling MRAM chips, modules, or embedded memory solutions incorporating this innovation.\n*   **Licensing:** Offering intellectual property licenses to other semiconductor manufacturers, generating royalty income.\n*   **Value-Added Services:** Developing specialized MRAM controllers or system-on-chip (SoC) designs that fully leverage the capabilities of this enhanced MRAM. The improved performance could enable premium pricing for MRAM products, increasing profit margins.\n\n**Strategic Positioning:**\nAdopting this technology allows companies to strategically position themselves as leaders in advanced non-volatile memory. It enables them to:\n*   **Differentiate Product Lines:** Offer MRAM solutions that outperform competitors in key metrics.\n*   **Enter New Markets:** Access segments previously underserved by MRAM due to performance limitations.\n*   **Future-Proof Investments:** Invest in a technology that is designed for scalability and long-term relevance in the evolving memory landscape. This patent could attract partnerships with major foundries and system integrators seeking next-generation memory solutions.\n\n**ROI Projections:**\nInvestment in this Precessional Spin Current Structure for Mram technology promises a strong return on investment (ROI). The ability to produce MRAM with significantly improved performance at potentially lower manufacturing costs (due to efficiency gains) means higher margins. Furthermore, the expanded market reach and competitive advantage could lead to increased market share and accelerated revenue growth. For instance, a 10-20% improvement in power efficiency or write speed can translate into substantial cost savings for data center operators or enable new product categories for device manufacturers, yielding significant returns over the product lifecycle. Early adopters or licensors stand to gain first-mover advantage in a rapidly expanding and critical technology sector. The reduced research and development costs for future MRAM generations, leveraging this foundational improvement, also contribute to a favorable ROI.","faqs":[{"answer":"The Precessional Spin Current Structure for Mram refers to a patented innovation (US-9853206) in Magnetoresistive Random-Access Memory (MRAM) technology. It describes a novel MRAM device designed to significantly improve the performance of the free layer within its magnetic tunnel junction (MTJ) stack.\n\nAt its core, this invention integrates a unique precessional spin current (PSC) magnetic layer. This PSC layer works in conjunction with a perpendicular MTJ, and its distinguishing feature is that its in-plane magnetization direction is engineered to be free to rotate. This dynamic precessional motion enables a more efficient and deterministic way to switch the free layer's magnetization, which is crucial for storing and retrieving data in MRAM devices.\n\nThe patent aims to overcome limitations of traditional MRAM designs by providing a more robust, faster, and energy-efficient mechanism for magnetic switching, positioning MRAM as a stronger contender for universal memory applications. Key aspects include improved free layer dynamics, precessional spin current generation, and compatibility with perpendicular MTJ architectures. Keywords: MRAM, Precessional Spin Current Structure for Mram, magnetic tunnel junction, free layer, non-volatile memory.","question":"What is Precessional Spin Current Structure for Mram?"},{"answer":"The Precessional Spin Current Structure for Mram operates on the principle of dynamic spin current generation. In an MRAM device, data is stored by the magnetic orientation of a 'free layer' within a magnetic tunnel junction (MTJ). To write data, this free layer's magnetization needs to be flipped.\n\nThis invention introduces a dedicated precessional spin current (PSC) magnetic layer. When an electrical current is passed through or near this PSC layer, it induces a precessional (spinning) motion in the PSC layer's own magnetization. This precessing motion, akin to a tiny gyroscope, generates a powerful and dynamic spin current. This spin current then transfers angular momentum to the adjacent free layer of the MRAM's perpendicular MTJ.\n\nThe key advantage is that the PSC layer's in-plane magnetization direction is free to rotate. This freedom allows for an optimized and more adiabatic transfer of angular momentum, meaning the free layer can be switched more efficiently, with less energy, and at higher speeds than conventional methods. This dynamic interaction enables precise and rapid control over the free layer's magnetic state. Keywords: Precessional Spin Current Structure for Mram, spin current generation, magnetization switching, perpendicular MTJ, angular momentum transfer.","question":"How does Precessional Spin Current Structure for Mram work?"},{"answer":"The Precessional Spin Current Structure for Mram primarily solves the challenge of optimizing the performance of the free layer in Magnetoresistive Random-Access Memory (MRAM) devices. In prior MRAM technologies, achieving a balance between high switching speed, low power consumption, and long device endurance has been a significant hurdle.\n\nTraditional methods like Spin-Transfer Torque (STT) MRAM often require high critical currents to switch the free layer, leading to increased power dissipation, slower switching times, and potential degradation of the magnetic tunnel junction (MTJ) tunnel barrier over time. This limits MRAM's scalability and broad adoption as a universal memory.\n\nThis innovation addresses these limitations by providing a more energy-efficient and deterministic mechanism for switching. By leveraging a precessional spin current, the patent reduces the current required for switching, thereby lowering power consumption, increasing switching speed, and extending the device's lifespan. It effectively makes MRAM a more viable and competitive memory solution for next-generation computing. Keywords: MRAM problems, free layer performance, power consumption, switching speed, memory endurance.","question":"What problem does Precessional Spin Current Structure for Mram solve?"},{"answer":"The patent US-9853206, titled \"Precessional Spin Current Structure for Mram,\" does not list specific inventors or an assignee in the provided data. Patent filings typically include the names of the individual inventors who conceived the invention and the assignee, which is the entity (company or institution) that owns the patent rights.\n\nIn many cases, the inventors are researchers or engineers employed by a semiconductor company or a research institution that is actively developing advanced memory technologies. The assignee would be the company that filed the patent application. Without this information in the provided data, the specific individuals and organization responsible for this groundbreaking work on the Precessional Spin Current Structure for Mram cannot be identified. Keywords: Precessional Spin Current Structure for Mram, inventors, assignee, patent filing, MRAM research.","question":"Who invented Precessional Spin Current Structure for Mram?"},{"answer":"The Precessional Spin Current Structure for Mram offers several significant benefits that enhance MRAM's capabilities and competitiveness in the memory market.\n\nFirstly, it leads to **significantly lower power consumption**. By utilizing a more efficient precessional spin current mechanism, the critical current required to switch the free layer is reduced, directly translating to less energy used during write operations. This is crucial for battery-powered devices and energy-conscious data centers. Secondly, it enables **faster switching speeds**. The dynamic and precise angular momentum transfer allows for quicker and more deterministic magnetization switching, improving the overall read/write performance of MRAM devices.\n\nThirdly, the invention enhances **device endurance and reliability**. Lower operating currents and a more controlled switching process reduce stress on the magnetic tunnel junction components, particularly the delicate tunnel barrier, thereby extending the device's operational lifespan. Finally, it offers **improved scalability**. The design's compatibility with perpendicular magnetic tunnel junctions (p-MTJs) ensures that this technology can be scaled to smaller dimensions, enabling higher memory densities for future generations of electronic devices. Keywords: Precessional Spin Current Structure for Mram, benefits, low power, high speed, endurance, scalability.","question":"What are the key benefits of Precessional Spin Current Structure for Mram?"},{"answer":"The Precessional Spin Current Structure for Mram distinguishes itself from prior MRAM technologies, such as Spin-Transfer Torque (STT-MRAM) and Spin-Orbit Torque (SOT-MRAM), primarily through its unique mechanism for generating and applying spin current.\n\nPrior art STT-MRAM relies on a spin-polarized current flowing directly through the magnetic tunnel junction (MTJ) to exert a static torque on the free layer. While effective, this often requires high current densities, leading to power dissipation and endurance concerns. SOT-MRAM separates the current path from the MTJ, using a current flowing adjacent to the MTJ to generate spin-orbit torque, which can offer faster switching and improved endurance, but often requires specific heavy metal layers and can still involve significant power for write operations.\n\nIn contrast, the Precessional Spin Current Structure for Mram utilizes a dedicated precessional spin current (PSC) magnetic layer whose magnetization dynamically precesses. This precessing motion itself generates a highly efficient spin current that then interacts with the free layer. The key differentiator is this *dynamic* and *freely rotating* nature of the PSC layer, which allows for a more adiabatic and energy-efficient transfer of angular momentum. This results in lower critical switching currents, faster switching, and enhanced endurance compared to the more static torque applications of prior art, while also being optimized for scalable perpendicular MTJs. Keywords: Precessional Spin Current Structure for Mram, prior art, STT-MRAM, SOT-MRAM, spin current, dynamic switching, competitive advantage.","question":"How is Precessional Spin Current Structure for Mram different from prior art?"},{"answer":"The Precessional Spin Current Structure for Mram is poised to impact a wide array of industries due to its ability to deliver faster, more power-efficient, and reliable non-volatile memory.\n\n**Consumer Electronics:** Smartphones, laptops, wearables, and other portable devices will benefit from extended battery life, quicker boot-up times, and faster application loading. **Data Centers and Cloud Computing:** Reduced power consumption for memory operations will lead to significant energy savings, lower operational costs, and improved performance for servers, storage arrays, and AI accelerators. **Artificial Intelligence and Machine Learning:** The high speed and non-volatility make it ideal for AI inference at the edge and for neuromorphic computing, where persistent, low-power memory is crucial.\n\n**Automotive Industry:** Its robustness and non-volatility are critical for advanced driver-assistance systems (ADAS), in-vehicle infotainment, and autonomous driving systems, where data integrity and instant-on capabilities are paramount. **Internet of Things (IoT):** Low-power, persistent memory is essential for billions of tiny sensors and edge devices that need to operate autonomously for long periods. **High-Performance Computing (HPC):** Faster memory access can alleviate the 'memory wall' bottleneck, enhancing the performance of supercomputers and specialized scientific computing platforms. Keywords: Precessional Spin Current Structure for Mram, industry impact, consumer electronics, data centers, AI, IoT, automotive, HPC.","question":"What industries will Precessional Spin Current Structure for Mram impact?"},{"answer":"The patent for the Precessional Spin Current Structure for Mram (US-9853206) was filed on **July 30, 2015**. The patent was subsequently published, and the official publication date is **December 26, 2017**.\n\nThe filing date marks when the inventors or assignee submitted the patent application to the patent office, establishing their priority date for the invention. The publication date is when the patent document became publicly available. These dates are important for understanding the timeline of the invention's development and its position within the broader landscape of memory technology innovation. The period between filing and publication allows for examination by the patent office. Keywords: Precessional Spin Current Structure for Mram, filing date, publication date, patent timeline, MRAM development.","question":"When was Precessional Spin Current Structure for Mram filed/granted?"},{"answer":"The enhanced performance offered by the Precessional Spin Current Structure for Mram opens up numerous commercial applications across various technology sectors.\n\nIn **embedded systems**, this MRAM can serve as a highly efficient, non-volatile memory for microcontrollers, enabling instant-on capabilities and reducing power consumption in a wide range of devices from industrial controls to smart appliances. For **enterprise storage**, it can be utilized in solid-state drives (SSDs) and persistent memory modules, offering faster data access and improved endurance for caching, journaling, and main memory replacement in servers and data centers. In **mobile and portable electronics**, the lower power consumption translates directly into longer battery life for smartphones, tablets, and wearables, while faster speeds enhance user experience.\n\nFurthermore, its reliability and speed make it ideal for **automotive electronics**, particularly in safety-critical systems like ADAS (Advanced Driver-Assistance Systems) and autonomous driving, where high-speed, non-volatile memory is essential. The technology also has significant potential in **AI and machine learning hardware**, providing high-performance, low-power memory for on-device inference and specialized AI accelerators, thereby enabling more powerful and efficient AI at the edge. Keywords: Precessional Spin Current Structure for Mram, commercial applications, embedded memory, enterprise storage, mobile electronics, automotive, AI hardware, IoT.","question":"What are the commercial applications of Precessional Spin Current Structure for Mram?"},{"answer":"Future developments for the Precessional Spin Current Structure for Mram are likely to focus on further optimization, integration, and expansion into new computing paradigms. We can expect continued research into novel materials for the precessional spin current (PSC) layer and the magnetic tunnel junction (MTJ) stack, aiming to push the boundaries of switching efficiency, speed, and endurance even further.\n\nIntegration with advanced semiconductor manufacturing processes will be a key area, ensuring the technology can be cost-effectively scaled to even smaller dimensions, leading to higher-density MRAM chips. This will involve refining fabrication techniques and exploring new device geometries. Furthermore, the principles behind this patent could inspire hybrid memory architectures that combine the Precessional Spin Current Structure for Mram with other emerging memory technologies or processing units, leading to novel logic-in-memory or in-memory computing solutions.\n\nAs MRAM's performance continues to improve, it is expected to play a more central role in future computing architectures, potentially enabling truly persistent main memory and accelerating the development of neuromorphic computing systems that mimic the human brain. The innovation provides a strong foundation for next-generation spintronic devices, and ongoing research will undoubtedly explore its full potential across various scientific and engineering disciplines. Keywords: Precessional Spin Current Structure for Mram, future developments, MRAM research, advanced materials, memory integration, neuromorphic computing, spintronics, scalability.","question":"What are the future developments expected for Precessional Spin Current Structure for Mram?"}],"topics":["Precessional Spin Current Structure for Mram","MRAM","magnetic tunnel junction","PSC magnetic layer","perpendicular MTJ","quest","universal","memory"],"tech_cluster":null},"seo":{"title":"Precessional Spin Current Structure for Mram - US-9853206","description":"Discover the Precessional Spin Current Structure for Mram patent, enhancing MRAM with faster, more efficient free layer performance using a novel PSC magnetic layer.","keywords":["Precessional Spin Current Structure for Mram","MRAM","magnetic tunnel junction","PSC magnetic layer","perpendicular MTJ","non-volatile memory","spintronics","memory innovation","US-9853206","memory performance","spin current","free layer"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853206","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853206","citation_suggestion":"Patentable. \"Precessional spin current structure for MRAM\" (US-9853206). https://patentable.app/patents/US-9853206","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853206","json":"https://patentable.app/api/llm-context/US-9853206","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:18:04.156Z"}