{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9853211","patent":{"patent_number":"US-9853211","title":"Array of cross point memory cells individually comprising a select device and a programmable device","assignee":null,"inventors":[],"filing_date":"2015-07-24T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":16,"abstract":"A method of forming an array of cross point memory cells comprises forming spaced conductive lower electrode pillars for individual of the memory cells being formed along and elevationally over spaced lower first lines. Walls cross elevationally over the first lines and between the electrode pillars that are along the first lines. The electrode pillars and walls form spaced openings between the first lines. The openings are lined with programmable material of the memory cells being formed to less-than-fill the openings with the programmable material. Conductive upper electrode material is formed over the programmable material within remaining volume of the openings and spaced upper second lines are formed which cross the first lines elevationally over the conductive upper electrode material that is within the openings. A select device is between the lower electrode pillar and the underlying first line or is between the conductive upper electrode material and the overlying second line for the individual memory cells. Aspects of the invention include an array of cross point memory cells independent of method of manufacture."},"analysis":{"summary":"The patent `Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device` (US-9853211) introduces a groundbreaking method for manufacturing high-density, non-volatile memory arrays. Its core innovation lies in creating cross point memory cells where each individual cell is equipped with a dedicated select device and a programmable resistive switching element.\n\nThe primary problem this invention solves is the 'sneak path' current issue, which plagues conventional high-density cross point memory architectures. Without individual selection, current can flow through unaddressed cells, leading to read/write errors and limiting array scalability. This patent ensures reliable operation by providing precise control over each memory cell.\n\nThe key technical approach involves a sophisticated fabrication process: forming spaced conductive lower electrode pillars over lower first lines, creating walls between these pillars to define openings, lining these openings with programmable material (critically, less-than-filling them), forming conductive upper electrode material over the programmable layer, and finally, forming upper second lines. The select device is strategically integrated either between the lower electrode and its underlying first line or between the upper electrode and its overlying second line for each memory cell.\n\nThe business value and applications are immense. This technology enables the creation of ultra-dense and highly reliable non-volatile memory, crucial for next-generation solid-state drives (SSDs), in-memory computing, artificial intelligence accelerators, and edge computing devices. Its enhanced reliability and scalability significantly reduce operational costs and improve system performance.\n\nThe market opportunity for this innovation is substantial, especially within the rapidly expanding data center, enterprise storage, and AI hardware sectors. By overcoming a fundamental limitation of cross point memory, this patent positions itself as a foundational technology for future memory development, offering a competitive edge in performance, power efficiency, and integration density.","layman_explanation":"### What Problem Does This Solve?\n\nIn today's digital world, we're generating and consuming more data than ever before. From streaming high-definition videos to powering complex artificial intelligence algorithms, our devices need to store and access vast amounts of information quickly and reliably. Current memory technologies, like the flash memory in your phone or SSD, are constantly being pushed to their limits. One major challenge in creating even denser and faster memory is something called the 'sneak path' problem. Imagine a huge grid of tiny memory switches, like a massive city grid. When you try to turn on just one specific light (memory cell), electricity can accidentally 'leak' through neighboring streets (unintended paths), causing other lights to flicker or even turn on when they shouldn't. This 'sneak path' issue makes it incredibly difficult to build reliable, ultra-high-density memory, hindering progress in areas like AI and cloud computing where speed and capacity are paramount.\n\n### How Does It Work?\n\nThe `Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device` patent offers an ingenious solution to this 'sneak path' problem. Think of it like a highly sophisticated, multi-story parking garage for data. Instead of traditional memory which might use a separate, bulky 'gatekeeper' for each parking spot, this innovation builds the gatekeeper directly *into* each parking spot. The patent describes a method for creating a grid of memory cells where each cell is made of a special 'programmable material' (like a tiny switch that remembers its state) and, critically, has its own 'select device' (the tiny gatekeeper). These memory cells are formed at the intersections of horizontal and vertical 'roads' (conductive lines). The fabrication process is meticulously designed to create small, precisely defined 'openings' for each cell. The programmable material is placed inside, but not completely filling it, making space for a top electrode. The 'select device' is then strategically positioned, either below or above the memory cell, ensuring that when you want to access a specific memory cell, its individual gatekeeper activates, and only that cell is affected. All other cells remain isolated, preventing any unwanted 'sneak paths' or interference.\n\n### Why Does This Matter?\n\nThis invention matters because it unlocks the potential for truly next-generation non-volatile memory. For businesses, this translates directly into significant advantages:\n\n*   **Massive Capacity & Performance:** Imagine data centers with storage capacities orders of magnitude greater than today, running AI models faster and more efficiently. This technology enables ultra-dense memory, which means more data can be stored in a smaller physical space, leading to more compact and powerful devices.\n*   **Unrivaled Reliability:** By eliminating sneak paths, the memory becomes far more reliable. This is crucial for critical applications where data integrity is non-negotiable, reducing the risk of errors and downtime. For businesses, this means less data corruption, more stable systems, and ultimately, lower operational costs.\n*   **Competitive Edge:** Companies that adopt or license this technology will gain a substantial competitive advantage. They can offer products (like SSDs or memory for AI servers) that are superior in performance, density, and reliability, setting new industry benchmarks and capturing significant market share.\n*   **Enabling Innovation:** This foundational memory technology will enable new applications and computing paradigms that are currently limited by memory bottlenecks. Think about faster edge AI, real-time analytics on massive datasets, or entirely new forms of in-memory computing. The potential ROI from leveraging this patent is substantial, as it underpins the future of high-performance computing.\n\n### What's Next?\n\nThis patent lays the groundwork for a new era of memory. We can expect to see this technology integrated into high-end enterprise storage solutions, specialized AI hardware, and potentially even next-generation consumer devices. The market adoption timeline will depend on further refinement of manufacturing processes and material science, but the fundamental architectural challenge has been addressed. Investors should view this as a strategic opportunity in the semiconductor space, as it represents a key enabler for future digital infrastructure and innovation.","technical_analysis":"The patent `Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device` (US-9853211) details a sophisticated method for fabricating highly integrated, individually addressable cross point memory arrays, addressing a critical challenge in non-volatile memory (NVM) development: the 'sneak path' current problem. This technical analysis delves into the architectural specifics, implementation details, and performance implications of this invention.\n\n**Technical Architecture:**\nAt its core, this invention describes a 3D cross point array architecture. The fundamental unit is a memory cell comprising a programmable device (e.g., a resistive switching element like RRAM or ReRAM) and a select device. The array is built upon intersecting conductive lines: 'lower first lines' (typically word lines) and 'upper second lines' (typically bit lines). Memory cells are formed at the intersections. The critical architectural feature is the inclusion of a dedicated select device for *each* individual memory cell, which can be placed either in series with the lower electrode pillar and its underlying first line, or in series with the conductive upper electrode material and its overlying second line. This ensures that current flows only through the intended cell during read/write operations.\n\n**Implementation Details:**\n1.  **Lower Electrode Pillars and First Lines:** The process begins with forming spaced conductive lower electrode pillars. These pillars are elevationally positioned over spaced lower first lines. This implies a layered fabrication approach, likely involving deposition of a conductive layer, followed by patterning (e.g., photolithography and etching) to define the lines and pillars.\n2.  **Wall Formation and Openings:** Walls are then formed. These walls cross elevationally over the first lines and, importantly, between the electrode pillars that are aligned along those first lines. This precise wall formation creates distinct, spaced openings between the first lines. The geometry and material of these walls are crucial for electrical isolation and structural integrity, likely involving dielectric materials.\n3.  **Programmable Material Deposition:** The openings are then lined with programmable material. This material constitutes the core of the memory cell, exhibiting resistive switching characteristics (e.g., phase-change material, transition metal oxides, conductive bridge RAM materials). A key detail is that this programmable material is formed to 'less-than-fill' the openings. This partial filling leaves a specific volume or cavity within the opening, which is essential for subsequent layer formation and device operation.\n4.  **Upper Electrode Material Formation:** Conductive upper electrode material is then formed over the programmable material, filling the remaining volume within the openings. This forms the top contact for the programmable device.\n5.  **Upper Second Lines:** Finally, spaced upper second lines are formed. These lines cross the first lines elevationally over the conductive upper electrode material within the openings, completing the cross point structure.\n6.  **Select Device Integration:** The patent specifies that a select device is integrated for each individual memory cell. This device could be a diode (e.g., MIM diode, Schottky diode), a transistor (though less common in pure cross-point to maintain density), or an ovonic threshold switch (OTS). Its placement flexibility (either between the lower pillar and first line, or upper electrode and second line) allows for process optimization based on the chosen selector technology and memory material. For instance, if the select device is a diode, its I-V characteristics (high resistance at low voltage, low resistance at high voltage) would prevent sneak paths by limiting current flow through unselected cells that experience only partial voltage drops.\n\n**Algorithm Specifics and Performance Characteristics:**\nOperationally, the selection mechanism is crucial. To program or read a specific cell (m,n), the corresponding word line (first line) 'm' and bit line (second line) 'n' are biased. All other lines are left floating or biased to ground/half-select voltages. The individual select device at cell (m,n) ensures that only this cell experiences the full programming/reading voltage, while unselected cells (half-selected or unselected) experience voltages below the threshold of their respective select devices, thus remaining largely non-conductive. This enables: \n*   **High Read/Write Margins:** Clear distinction between selected and unselected cells.\n*   **Low Power Consumption:** Minimal leakage through unselected paths.\n*   **Fast Access Times:** Direct addressing of cells without complex decoding logic at the array level, leveraging the selector's switching speed.\n*   **High Endurance and Retention:** These characteristics are primarily dependent on the chosen programmable material, but the reliable selection mechanism ensures that the intrinsic properties of the memory element are fully utilized without degradation from sneak currents.\n\n**Integration Patterns and Code-Level Implications:**\nThis architecture would integrate seamlessly with standard memory controllers. From a software perspective, the memory array would appear as a high-density, addressable block. The complex 3D fabrication and individual selection are abstracted away by the hardware. Drivers and firmware would interact with the memory controller using standard read/write commands. The enhanced reliability and density mean that higher-level software (operating systems, applications) can benefit from larger, faster, and more robust non-volatile storage, potentially simplifying memory management and enabling more ambitious data-intensive applications. The G11C CPC code further confirms its classification as a memory circuit, indicating its direct relevance to memory design and control.\n\nIn conclusion, this patent provides a technically sound and innovative solution to a long-standing problem in NVM, laying the groundwork for highly scalable and reliable cross point memory technologies.","business_analysis":"The patent `Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device` (US-9853211) represents a significant advancement in non-volatile memory (NVM) technology, poised to disrupt multiple segments of the semiconductor and data storage markets. This business analysis explores the market opportunity, competitive advantages, revenue potential, and strategic positioning enabled by this innovation.\n\n**Market Opportunity Size:**\nThe global non-volatile memory market is projected to reach over $100 billion by the mid-2020s, driven by the explosive growth in data generation, artificial intelligence, IoT, and cloud computing. Within this, next-generation NVMs like RRAM are expected to capture a substantial share as traditional NAND flash approaches its scaling limits. This patent directly addresses the core challenges of RRAM and similar cross point memories, making it a foundational technology for this rapidly expanding segment. The demand for higher density, lower latency, and more power-efficient memory is insatiable across data centers, enterprise storage, consumer electronics, and specialized computing (e.g., AI accelerators, neuromorphic chips).\n\n**Competitive Advantages:**\nThis innovation offers several compelling competitive advantages:\n\n1.  **Superior Density:** By enabling highly reliable operation in dense cross point arrays, this technology can achieve significantly higher bit density per unit area compared to conventional memory, including existing NAND flash and even early RRAM implementations that struggle with sneak paths.\n2.  **Enhanced Reliability:** The individual select device for each memory cell fundamentally solves the 'sneak path' problem, leading to vastly improved read/write reliability and data integrity. This translates to lower error rates, longer device lifetimes, and reduced total cost of ownership for end-users.\n3.  **Performance Gains:** While the abstract doesn't explicitly detail speed, cross point architectures inherently offer faster access times than NAND flash due to direct cell addressing. The reliable selection mechanism ensures these speed benefits are realized in practical large-scale arrays.\n4.  **Power Efficiency:** By minimizing leakage currents through unselected cells, this approach contributes to lower power consumption, a critical factor for mobile, edge, and data center applications.\n5.  **Scalability to 3D:** The architecture described is inherently suited for multi-layer 3D stacking, further boosting volumetric density and ensuring future scalability in line with market demands.\n\n**Revenue Potential and Business Models:**\nThe revenue potential for this technology is substantial. It could be licensed to major semiconductor manufacturers (e.g., Samsung, Micron, SK Hynix, Kioxia) for integration into their next-generation NVM product lines. This could involve per-unit royalties, fixed licensing fees, or joint development agreements. Alternatively, a company leveraging this patent could enter the market as a fabless memory provider, designing and selling high-performance memory chips for specific high-value applications (e.g., enterprise SSDs, AI memory modules). The patent's independent claim for the array structure itself, regardless of manufacturing method, broadens its licensing appeal and application scope.\n\n**Strategic Positioning:**\nThis patent positions its owner as a leader in advanced NVM architecture. By solving a fundamental challenge that has held back cross point memory, it offers a strategic advantage in the race to develop 'universal memory' – a single memory type combining the best attributes of DRAM and NAND. Companies adopting this technology can differentiate their products based on unparalleled density, reliability, and performance. It also opens doors to new business models around in-memory computing and specialized AI hardware, where memory and processing are tightly integrated.\n\n**ROI Projections:**\nInvestment in developing and commercializing this technology would likely yield significant ROI through licensing revenues, market share gains in high-growth NVM segments, and the creation of new product categories. Early movers leveraging this patent could establish strong market positions, benefiting from the high margins typically associated with cutting-edge semiconductor IP. The long-term value lies in its foundational nature, enabling subsequent innovations and applications across the entire digital infrastructure.","faqs":[{"answer":"The `Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device` is a groundbreaking patent (US-9853211) that describes an innovative method for creating highly dense and reliable non-volatile memory arrays. At its core, this invention focuses on a specific architecture for memory cells arranged in a cross-point configuration, where each individual memory cell is uniquely equipped with its own dedicated 'select device' and a 'programmable device'.\n\nThis design is crucial because cross-point arrays, while offering immense potential for high data storage density, traditionally suffer from a problem known as 'sneak path' currents. These unwanted currents can flow through unselected cells, leading to data corruption and limiting the array's overall reliability and scalability. By integrating an individual select device for each memory cell, this patent provides a robust solution to this long-standing challenge.\n\nThe programmable device within each cell is the actual element that stores data by changing its resistance state (e.g., in Resistive RAM or RRAM), while the select device acts like a tiny, precise gate, ensuring that current only flows to the intended cell during read or write operations. This combination makes the `Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device` a foundational technology for next-generation memory solutions that demand both high capacity and exceptional reliability. It represents a significant leap forward in semiconductor memory design and fabrication.","question":"What is Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device?"},{"answer":"The `Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device` works through a meticulously designed fabrication process and a clever architectural arrangement. The method begins by forming spaced conductive lower electrode pillars, which are positioned elevationally over spaced lower first lines (acting as word lines). Insulating walls are then created, crossing over these first lines and between the electrode pillars, which defines precise, individual openings for each memory cell.\n\nWithin these openings, programmable material (the actual data-storing element, like a resistive switching material) is deposited. Crucially, this material is formed to 'less-than-fill' the openings, leaving a specific volume for the next layer. Conductive upper electrode material is then formed over the programmable material, filling the remaining volume. Finally, spaced upper second lines (bit lines) are created, crossing the first lines elevationally over the upper electrode material.\n\nThe key to this invention's functionality is the integration of a select device for *each* individual memory cell. This select device can be strategically placed either between the lower electrode pillar and its underlying first line, or between the conductive upper electrode material and its overlying second line. This device acts as a non-linear switch; it allows current to flow only when a specific voltage threshold is met, effectively isolating the selected cell and preventing unwanted current flow (sneak paths) through unselected cells. This precise control ensures reliable reading and writing of data within the high-density array.","question":"How does Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device work?"},{"answer":"The `Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device` primarily solves the critical 'sneak path' current problem inherent in high-density cross-point memory arrays. In traditional cross-point architectures without individual selectors, when voltage is applied to access a specific memory cell, current can inadvertently leak through numerous unselected cells along the same word or bit lines, or even through cells in other parts of the array. This 'sneak path' phenomenon has several detrimental effects:\n\nFirstly, it corrupts read operations by making it difficult to accurately sense the state of the intended memory cell, as the leakage currents can mask the true signal. Secondly, it can lead to unintended programming or disturbance of unselected cells, compromising data integrity. Thirdly, these leakage currents increase overall power consumption, which is a major concern for energy-efficient computing. Finally, the sneak path problem severely limits the maximum achievable array size and density, preventing cross-point memory from reaching its full potential.\n\nBy integrating a dedicated select device for each memory cell, this patent ensures precise electrical isolation. The select device acts as a gate, allowing current to flow only to the specifically addressed cell while blocking current to all others. This effectively eliminates sneak paths, enabling the construction of ultra-dense, highly reliable, and scalable non-volatile memory arrays crucial for future computing demands.","question":"What problem does Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device solve?"},{"answer":"The patent `Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device` (US-9853211) does not have inventors or an assignee explicitly listed in the provided patent data. In typical patent filings, the inventors are the individuals who conceived the invention, and the assignee is the company or entity to whom the patent rights are assigned. These details are usually publicly available in the full patent document. \n\nWithout this information, it's not possible to name the specific individuals or corporate entity responsible for this innovative memory technology. However, the invention itself, filed on 2015-07-24 and published on 2017-12-26, represents a significant contribution to the field of semiconductor memory, particularly in addressing the challenges of high-density cross-point arrays. The development of such complex memory architectures typically involves teams of highly skilled engineers and scientists specializing in materials science, device physics, and semiconductor fabrication.","question":"Who invented Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device?"},{"answer":"The `Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device` offers several transformative benefits for the future of memory technology:\n\n1.  **Ultra-High Density:** By enabling reliable operation in dense cross-point arrays, this invention allows for significantly more memory cells to be packed into a smaller physical area. This is crucial for applications requiring massive storage capacities, such as enterprise SSDs and in-memory computing, and for compact devices like smartphones and IoT sensors.\n2.  **Enhanced Reliability and Data Integrity:** The dedicated select device for each memory cell eliminates the 'sneak path' problem, preventing unintended current flow and data corruption. This leads to more accurate read and write operations, higher data integrity, and a longer operational lifespan for memory devices.\n3.  **Improved Performance:** Cross-point architectures inherently offer faster access times than traditional NAND flash. With the reliable selection mechanism provided by this patent, these speed advantages can be fully realized in large-scale arrays, resulting in lower latency and higher throughput for data-intensive applications.\n4.  **Lower Power Consumption:** By actively suppressing leakage currents through unselected cells, this technology contributes to reduced overall power consumption, making it ideal for energy-efficient data centers, mobile devices, and edge computing platforms.\n5.  **Future-Proof Scalability:** The 3D architectural design is inherently scalable, allowing for multi-layer stacking of memory arrays. This ensures that the technology can continue to meet the ever-growing demand for memory capacity in the years to come, adapting to future fabrication advancements.","question":"What are the key benefits of Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device?"},{"answer":"The `Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device` differentiates itself from prior art by providing a highly effective and manufacturable solution to the 'sneak path' problem in cross-point memory arrays, particularly through its precise integration of individual select devices.\n\nPrior art approaches often included:\n*   **Passive 1R arrays:** These offered maximum density but suffered severely from sneak paths, making them unreliable for large arrays.\n*   **1T1R (One Transistor One Resistor) cells:** While reliable, the transistor (T) significantly increased the cell area, negating much of the density advantage of cross-point memory and adding complexity.\n*   **1D1R (One Diode One Resistor) cells:** Diodes (D) offered better density than transistors and some sneak path suppression, but could have limitations in current drive, reverse leakage, and 3D stacking compatibility.\n\nThis patent's key distinctions include:\n1.  **Guaranteed Individual Selection:** Unlike passive 1R arrays, this invention ensures that *each* memory cell has its own active select device, providing robust isolation and preventing sneak paths more effectively than simple diode-based solutions in complex 3D structures.\n2.  **Optimized Density and Integration:** It achieves high density similar to cross-point arrays while maintaining reliability, a balance often difficult to strike with prior 1T1R or 1D1R cells. The fabrication method for forming precise openings and integrating the select device within the memory cell structure is a significant advancement.\n3.  **Flexible Selector Placement:** The patent allows the select device to be positioned either below the lower electrode or above the upper electrode for each cell. This flexibility in integration is a key advantage over more rigid prior art designs, enabling optimization based on chosen materials and process compatibility.\n4.  **Foundational Architectural Breakthrough:** The independent claim for the array structure itself, irrespective of the manufacturing method, signifies a fundamental improvement in memory cell design that can be adapted to future fabrication techniques, offering a more versatile and enduring solution than many specific process-focused prior art patents.","question":"How is Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device different from prior art?"},{"answer":"The `Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device` is poised to have a transformative impact across a wide range of industries that rely heavily on data storage, processing, and retrieval. Its ability to deliver high-density, reliable, and potentially faster non-volatile memory makes it a foundational technology for several sectors:\n\n1.  **Data Centers and Cloud Computing:** The demand for massive, high-performance storage in data centers is insatiable. This technology can enable next-generation enterprise SSDs and Storage-Class Memory (SCM) with unprecedented capacities and lower latency, reducing operational costs and improving the efficiency of cloud services.\n2.  **Artificial Intelligence (AI) and Machine Learning (ML):** AI/ML workloads require immense amounts of data to be processed at extreme speeds. This memory can power AI accelerators, providing fast, dense, and persistent storage for model training, inference, and in-memory computing solutions, accelerating AI development and deployment.\n3.  **Internet of Things (IoT) and Edge Computing:** IoT devices and edge computing nodes are often constrained by power, space, and the need for local data processing. This high-density, low-power memory can enable more sophisticated AI and data analytics directly on edge devices, reducing reliance on cloud connectivity and improving real-time responsiveness.\n4.  **Consumer Electronics:** From smartphones and tablets to high-end gaming PCs, consumers constantly demand more storage and faster performance. This patent could lead to devices with vastly increased storage capacities, quicker boot times, and snappier application performance.\n5.  **Automotive (Autonomous Driving):** Autonomous vehicles generate and process vast quantities of sensor data in real-time. Reliable, high-speed, non-volatile memory is critical for onboard AI systems, mapping, and data logging, making this technology highly relevant for the automotive sector.\n6.  **High-Performance Computing (HPC):** Scientific simulations, complex modeling, and big data analytics in HPC environments will benefit significantly from the increased density and speed offered by this advanced memory architecture.","question":"What industries will Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device impact?"},{"answer":"The patent `Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device` (US-9853211) was filed on **July 24, 2015**. The filing date marks the official submission of the patent application to the patent office, establishing the priority date for the invention.\n\nIt was subsequently published on **December 26, 2017**. The publication date typically signifies when the patent document becomes publicly accessible, allowing others to review the details of the invention. While the term 'granted' is often used to refer to the date a patent is officially issued, the provided data specifies a 'publication date.' For a US patent, the publication date usually refers to the date the application is published, which can be before it is granted. To confirm the exact grant date, one would typically consult the full patent history available through patent databases. Nevertheless, both dates are crucial milestones in the lifecycle of this significant memory technology patent, highlighting its development timeline and when its details became public knowledge.","question":"When was Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device filed/granted?"},{"answer":"The commercial applications of `Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device` are extensive, primarily driven by its ability to enable high-density, reliable, and fast non-volatile memory. These applications span across various segments of the technology market:\n\n1.  **Enterprise Solid-State Drives (SSDs):** This technology can be integrated into next-generation enterprise SSDs, offering significantly higher capacities and improved performance (lower latency, higher IOPS) compared to current NAND flash-based solutions. This is crucial for data centers, cloud storage, and high-performance computing environments.\n2.  **Storage-Class Memory (SCM):** It is an ideal candidate for SCM, which aims to bridge the performance gap between DRAM and NAND. SCM products leveraging this patent could offer near-DRAM speeds with non-volatility, revolutionizing in-memory databases, real-time analytics, and persistent memory solutions.\n3.  **AI/ML Accelerators and Neuromorphic Computing:** The high density and potential for fast access make this memory suitable for integration with AI processors and accelerators. It can serve as high-bandwidth, low-latency memory for storing AI model parameters (weights) and intermediate data, accelerating training and inference. Its cross-point structure is also well-suited for neuromorphic chips that mimic brain functions.\n4.  **Embedded Memory for IoT and Edge Devices:** For IoT sensors, smart appliances, and edge computing gateways, compact, low-power, and robust non-volatile memory is essential. This patent enables the creation of highly integrated memory solutions that can perform local data processing and retention efficiently.\n5.  **High-End Consumer Devices:** While initially targeting enterprise and specialized applications, the technology could eventually trickle down to high-end consumer electronics, leading to smartphones, laptops, and gaming consoles with vastly increased storage, instant-on capabilities, and superior overall performance.\n6.  **Automotive and Industrial Systems:** For critical applications like autonomous driving systems, industrial automation, and avionics, reliable and high-performance non-volatile memory is paramount. This technology's robustness against sneak paths makes it a strong candidate for such demanding environments.","question":"What are the commercial applications of Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device?"},{"answer":"Future developments stemming from the `Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device` are expected to build upon its foundational architectural and fabrication breakthroughs. These developments will likely focus on further optimization, scalability, and broader integration:\n\n1.  **Increased 3D Stacking Layers:** The current patent describes a method for forming an array, which is inherently amenable to multi-layer stacking. Future developments will likely push the limits of vertical integration, enabling many more layers of cross-point memory cells to dramatically increase volumetric density. This will require advancements in high-aspect-ratio patterning and deposition techniques.\n2.  **Optimized Selector Devices and Programmable Materials:** Research will continue into developing even more efficient select devices with lower threshold voltages, higher ON/OFF ratios, and better endurance, along with new programmable materials offering faster switching speeds, higher retention, and improved cycling endurance. The flexibility in selector placement offered by this patent allows for continuous innovation in these material science aspects.\n3.  **Integration with Logic (In-Memory Computing):** A significant future trend is the tighter integration of memory and processing units. This patent's architecture is highly suitable for in-memory computing, where some computational tasks are performed directly within the memory array. Future developments will focus on co-optimizing the memory array with logic circuits to reduce data movement and improve energy efficiency, especially for AI workloads.\n4.  **Advanced Fabrication Techniques:** As manufacturing processes evolve, new techniques will emerge to refine the formation of electrode pillars, walls, and the precise 'less-than-fill' deposition of programmable material, potentially reducing manufacturing costs and increasing yields.\n5.  **Standardization and Ecosystem Development:** As the technology matures, efforts will be made to standardize interfaces and protocols, fostering a robust ecosystem of hardware and software developers. This will accelerate its adoption across various platforms and applications, ensuring the `Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device` becomes a ubiquitous component in future computing systems.","question":"What are the future developments expected for Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device?"}],"topics":["Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device","cross point memory","non-volatile memory","select device","programmable device","evolution","volatile","memory"],"tech_cluster":null},"seo":{"title":"Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device - US-9853211","description":"Discover the Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device patent. This innovation enables high-density, reliable non-volatile memory with individual cell selection, solving 'sneak path' issues for next-gen computing.","keywords":["Array of Cross Point Memory Cells Individually Comprising a Select Device and a Programmable Device","cross point memory","non-volatile memory","select device","programmable device","memory array","RRAM","ReRAM","high-density memory","semiconductor memory","memory fabrication","patent US-9853211","G11C"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9853211","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9853211","citation_suggestion":"Patentable. \"Array of cross point memory cells individually comprising a select device and a programmable device\" (US-9853211). https://patentable.app/patents/US-9853211","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9853211","json":"https://patentable.app/api/llm-context/US-9853211","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:55:54.625Z"}