{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9854194","patent":{"patent_number":"US-9854194","title":"CMOS active pixel structure","assignee":null,"inventors":[],"filing_date":"2013-10-25T00:00:00.000Z","publication_date":"2017-12-26T00:00:00.000Z","cpc_codes":["H04N","H04N","H04N","H04N","H04N","H04N"],"num_claims":17,"abstract":"The invention concerns a structure of a CMOS active pixel, comprising a semi-conductive substrate (1) of a first type, at least one first photodiode operating in photovoltaic mode comprising a photovoltaic conversion area (2) defined by a doped area of a second type forming a PN junction with the substrate, said first photodiode re-emitting photoelectric charge carriers collected by the PN junction during the exposure of said first photodiode to a light, at least one second photodiode operating in integration mode and reverse-biased, said second photodiode comprising a charge accumulation area (3) defined by a doped area of the second type forming a PN junction with the substrate, said charge accumulation area being exposed to the charge carriers from the photovoltaic conversion area (2) in order to accumulate such charge carriers."},"analysis":{"summary":"The Cmos Active Pixel Structure patent introduces an innovative design for CMOS active pixel sensors, aiming to enhance image sensor performance. The core innovation lies in the integration of a photovoltaic mode photodiode with an integration mode photodiode. This combination addresses the limitations of existing image sensors, particularly in low-light conditions, by improving charge collection and reducing noise. The system comprises a semi-conductive substrate with at least one photovoltaic photodiode, which re-emits photoelectric charge carriers, and one integration mode photodiode, which accumulates these carriers. This design optimizes charge transfer and minimizes losses, leading to clearer and more accurate images.\n\nThe problem being solved is the challenge of capturing high-quality images in low-light environments, where traditional CMOS active pixel sensors often suffer from poor sensitivity and high noise levels. The Cmos Active Pixel Structure addresses this issue by efficiently converting light into electrical signals and maximizing the signal-to-noise ratio. This is crucial for applications such as security cameras, medical imaging devices, and scientific imaging systems, where image quality is paramount.\n\nThe key technical approach involves the combination of photovoltaic and integration mode photodiodes within a single pixel. The photovoltaic photodiode efficiently converts light into electrical charge carriers, while the integration mode photodiode accumulates these carriers, enhancing the signal-to-noise ratio. The patent also describes specific doping configurations that optimize the performance of the photodiodes, further enhancing the overall efficiency of the system.\n\nThe business value and applications of this technology are significant. The improved image quality and reduced noise levels can enhance the performance of various devices, including smartphones, digital cameras, security systems, and medical imaging equipment. This can lead to increased sales, improved customer satisfaction, and enhanced brand reputation. The market opportunity for this technology is substantial, as image sensors are becoming increasingly important in a wide range of applications.","layman_explanation":"The Cmos Active Pixel Structure patent addresses a common problem in digital imaging: capturing high-quality images in low-light conditions. Existing image sensors often struggle in these environments, producing noisy, blurry, or dark images. This patent introduces a new design that significantly improves image quality in low-light situations.\n\nInstead of relying on a single component to capture light, this technology combines two types of light-sensitive elements, called photodiodes. Think of it like having a team of workers instead of just one. One type of photodiode is very efficient at capturing even the faintest light. The other type is excellent at storing and amplifying that light. By working together, they can capture much more detail in dark environments than a traditional sensor.\n\nThis innovation matters because it can improve the performance of a wide range of products, from smartphone cameras to medical imaging devices. Imagine security cameras that can see clearly at night, or medical scans that provide more detailed information. It also gives companies a competitive edge by offering better image quality and potentially lower energy consumption.\n\nLooking ahead, this technology could be used in even more advanced imaging systems, such as self-driving cars or virtual reality headsets. As the demand for high-quality images continues to grow, the Cmos Active Pixel Structure patent has the potential to become a valuable asset in the digital imaging market.","technical_analysis":"The Cmos Active Pixel Structure patent details a novel CMOS active pixel sensor architecture that aims to improve image sensor performance, particularly in low-light conditions. The key technical innovation is the integration of a photovoltaic mode photodiode and an integration mode photodiode within a single pixel. This combination addresses the limitations of traditional CMOS active pixel sensors, which often suffer from poor sensitivity and high noise levels.\n\nThe technical architecture comprises a semi-conductive substrate with at least one photovoltaic photodiode and one integration mode photodiode. The photovoltaic photodiode, operating in photovoltaic mode, generates charge carriers upon exposure to light. These charge carriers are then re-emitted and collected by the integration mode photodiode, which is reverse-biased and operates in integration mode. This design optimizes charge transfer and minimizes losses, leading to improved sensitivity and reduced noise.\n\nThe implementation details involve the fabrication of the photodiodes using standard CMOS fabrication processes. The patent describes specific doping configurations that optimize the performance of the photodiodes, ensuring efficient charge conversion and accumulation. The integration of this technology into existing imaging systems requires careful consideration of the specific requirements of each application. For example, in security cameras, the focus may be on maximizing sensitivity and minimizing noise, while in medical imaging, the emphasis may be on achieving high resolution and accurate color reproduction.\n\nThe algorithm specifics involve the optimization of charge transfer between the photovoltaic and integration mode photodiodes. The patent describes techniques for minimizing losses and maximizing the signal-to-noise ratio. The integration patterns involve the arrangement of the photodiodes within the pixel, which can be optimized to achieve specific performance characteristics.\n\nThe performance characteristics of the Cmos Active Pixel Structure are expected to be significantly better than those of traditional CMOS active pixel sensors. The improved sensitivity and reduced noise levels should lead to clearer and more accurate images, particularly in low-light conditions. The code-level implications involve the development of new image processing algorithms that can take advantage of the improved performance of this technology. The Cmos Active Pixel Structure represents a significant advancement in image sensor technology, with the potential to revolutionize various applications.","business_analysis":"The Cmos Active Pixel Structure patent presents a significant business opportunity in the image sensor market. The core innovation of this technology lies in its ability to enhance image sensor performance, particularly in low-light conditions, by integrating a photovoltaic mode photodiode with an integration mode photodiode. This combination addresses the limitations of existing image sensors, leading to improved image quality and reduced noise.\n\nThe market opportunity size for this technology is substantial. Image sensors are used in a wide range of applications, including smartphones, digital cameras, security systems, medical imaging equipment, and automotive systems. The demand for high-quality images is growing rapidly, driven by the increasing popularity of social media, the rise of mobile photography, and the growing use of imaging in medical and industrial applications.\n\nThe competitive advantages of the Cmos Active Pixel Structure include its improved sensitivity, reduced noise levels, and enhanced charge transfer efficiency. These advantages can lead to clearer and more accurate images, particularly in low-light conditions. The technology is also compatible with standard CMOS fabrication processes, making it relatively easy to integrate into existing manufacturing workflows.\n\nThe revenue potential for this technology is significant. The improved performance of the Cmos Active Pixel Structure can lead to increased sales of image sensors and related products. The technology can also be licensed to other companies, generating additional revenue streams. The business models for this technology include direct sales of image sensors, licensing of the technology, and partnerships with other companies.\n\nThe strategic positioning of the Cmos Active Pixel Structure involves targeting specific market segments where high-quality images are particularly important. These segments include security systems, medical imaging equipment, and high-end digital cameras. The ROI projections for this technology are favorable, given the large market opportunity and the competitive advantages of the technology. The Cmos Active Pixel Structure has the potential to generate significant returns for investors and stakeholders.","faqs":null,"topics":["CMOS active pixel","image sensor","photodiode","photovoltaic","low-light imaging","active","pixel","structure"],"tech_cluster":null},"seo":{"title":"Cmos Active Pixel Structure - Patent US-9854194","description":"Discover the Cmos Active Pixel Structure patent for enhanced image sensor performance. Improved low-light sensitivity and reduced noise. Full analysis and claims.","keywords":["CMOS active pixel","image sensor","photodiode","photovoltaic","low-light imaging","noise reduction","patent","patent US-9854194"]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9854194","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9854194","citation_suggestion":"Patentable. \"CMOS active pixel structure\" (US-9854194). https://patentable.app/patents/US-9854194","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9854194","json":"https://patentable.app/api/llm-context/US-9854194","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T05:30:31.070Z"}