Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A system comprising: a memory device; and a processing device, operatively coupled with the memory device, to: identify a first data stored at a first portion of a memory cell and a second data stored at a second portion of the memory cell; determine a first error rate associated with the first data stored at the first portion of the memory cell, the first error rate being adjusted to exceed a second error rate associated with the second data stored at the second portion of the memory cell; determine whether the first error rate exceeds a threshold; and in response to determining that the first error rate exceeds the threshold: provide the second data stored at the second portion of the memory cell for use in an error correction operation; and provide third data stored at a third portion of the memory cell to a controller associated with the memory cell.
This invention relates to memory systems and addresses the challenge of improving error correction efficiency in multi-level memory cells, such as those used in solid-state storage devices. Multi-level cells store multiple bits of data in different portions of the same cell, but these portions may experience varying levels of data integrity due to factors like noise, wear, or manufacturing variations. The system described here enhances error correction by selectively utilizing data from different portions of a memory cell based on their error rates. The system includes a memory device and a processing device that analyzes data stored in different portions of a memory cell. The processing device identifies first data from a first portion and second data from a second portion of the cell, then calculates a first error rate for the first data, which is intentionally adjusted to be higher than the second error rate of the second data. If the first error rate exceeds a predefined threshold, the system uses the second data for error correction and sends third data from a third portion of the cell to a controller for further processing. This approach optimizes error correction by prioritizing more reliable data while handling less reliable data through additional mechanisms, improving overall data integrity and system performance. The system is particularly useful in high-density storage applications where multi-level cells are common.
2. The system of claim 1 , wherein the processing device is further to: perform the error correction operation on the second data stored at the second portion of memory cell; and provide corrected second data to the second portion of the memory cell.
The system relates to memory storage technology, specifically addressing error correction in memory cells. The invention improves reliability in memory systems by performing error correction on data stored in memory cells, particularly in scenarios where data integrity may be compromised due to errors. The system includes a processing device that operates on memory cells divided into at least two portions. The processing device performs error correction on data stored in a second portion of the memory cell and provides corrected data back to that portion. This ensures that data stored in the memory cell remains accurate and reliable. The system may also include additional components, such as a memory controller or interface, to facilitate communication between the processing device and the memory cells. The error correction process may involve detecting and correcting errors in the stored data, such as bit flips or other data corruption, using techniques like error-correcting codes (ECC). The invention is particularly useful in applications where data integrity is critical, such as in solid-state drives, embedded systems, or other storage devices. By actively correcting errors in the memory cells, the system enhances the overall reliability and longevity of the memory storage solution.
3. The system of claim 2 , wherein the corrected second data is provided to the second portion of the memory cell during a second programming operation performed on the memory cell.
A system for memory cell programming corrects data errors during multi-phase programming operations. The system addresses errors that occur when programming a memory cell, particularly in non-volatile memory devices like flash memory, where data integrity is critical. The memory cell is divided into at least two portions, each storing a segment of data. During a first programming operation, the first portion of the memory cell is programmed with initial data. However, errors may arise due to interference, wear, or other factors. The system detects these errors and generates corrected data for the second portion of the memory cell. This corrected data is then provided to the second portion during a subsequent programming operation, ensuring that the entire memory cell stores accurate data. The system may use error correction codes (ECC) or other validation techniques to verify and correct the data before the second programming phase. This approach improves data reliability by mitigating errors that could otherwise propagate through the memory cell's programming process. The system is particularly useful in high-density storage devices where maintaining data integrity is essential.
4. The system of claim 1 , wherein the first error rate associated with the first data stored at the first portion of the memory cell is based on a first programming operation performed on the memory cell.
A system for managing data storage in memory cells addresses the challenge of accurately tracking error rates in multi-level memory cells, where different portions of the same cell store distinct data. The system includes a memory cell with multiple portions, each storing different data, and a controller that determines error rates for each portion. The error rate for data stored in a first portion of the memory cell is derived from a first programming operation applied to that portion. This operation may involve adjusting voltage levels or other parameters to ensure reliable data storage. The system may also include mechanisms to track error rates for other portions of the memory cell, which could be based on separate programming operations or other factors. By associating error rates with specific programming operations, the system improves data integrity and reliability in memory storage, particularly in multi-level cells where different data segments may experience varying levels of degradation. The controller can use these error rates to optimize read and write operations, ensuring accurate data retrieval and minimizing errors over time. This approach is particularly useful in high-density memory technologies where precise error tracking is critical for performance and longevity.
5. The system of claim 1 , wherein the processing device is further to: perform a read operation on the first data stored at the first portion of the memory cell; and provide the first data stored at the first portion of the memory cell to the controller associated with the memory cell, wherein determining whether the first error rate exceeds the threshold is based on providing the first data stored at the first portion of the memory cell to the controller associated with the memory cell.
This invention relates to memory systems, specifically to a method for error detection and correction in multi-level memory cells. The problem addressed is the need to accurately detect and correct errors in data stored in memory cells, particularly in systems where memory cells store multiple bits of data (multi-level cells). Traditional error detection methods may not be sufficient for identifying errors in specific portions of a memory cell, leading to data integrity issues. The system includes a memory cell with multiple portions, each storing distinct data, and a processing device that interacts with a controller. The processing device performs a read operation on data stored in a first portion of the memory cell and provides this data to the associated controller. The controller then determines whether the error rate of the data exceeds a predefined threshold. This determination is based on analyzing the data read from the first portion of the memory cell. If the error rate exceeds the threshold, corrective actions, such as error correction or data relocation, may be initiated. The system ensures reliable data storage by monitoring and addressing errors in specific portions of memory cells, improving overall data integrity in multi-level memory systems.
6. The system of claim 1 , wherein to determine the first error rate associated with the first data stored at the first portion of the memory cell, the processing device is further to: adjust the first error rate associated with the first data stored at the first portion of the memory cell by modifying one or more program voltages associated with the first data stored at the first portion of the memory cell.
This invention relates to error rate determination in memory systems, specifically for adjusting error rates in non-volatile memory cells by modifying program voltages. The problem addressed is accurately assessing and improving data integrity in memory storage, particularly in systems where error rates can vary due to factors like wear, interference, or manufacturing inconsistencies. The system includes a processing device that determines an error rate for data stored in a memory cell. To refine this error rate, the processing device adjusts it by modifying one or more program voltages used during the storage of the data. Program voltages are the electrical signals applied to write data into the memory cell, and altering these voltages can influence how reliably the data is stored and subsequently read. By dynamically adjusting these voltages, the system can reduce errors and improve data accuracy. The processing device may also analyze the adjusted error rate to determine optimal voltage levels for future programming operations, ensuring consistent performance over time. This approach is particularly useful in flash memory and other non-volatile storage technologies where maintaining low error rates is critical for long-term reliability. The system can be integrated into memory controllers or other storage management components to enhance data integrity without requiring significant hardware changes.
7. The system of claim 6 , wherein to adjust the first error rate associated with the first data stored at the first portion of the memory cell, the processing device is further to modify the one or more program voltages to increase a subsequent first error rate, and wherein the modifying the one or more program voltages to increase the subsequent first error rate corresponds to a decrease in a subsequent second error rate associated with the second data stored at the second portion of the memory cell.
This invention relates to memory systems, specifically to techniques for managing error rates in multi-level memory cells. The problem addressed is the trade-off between error rates in different data portions of a memory cell when programming voltages are adjusted. In a memory cell storing multiple data bits (e.g., in a multi-level cell), different portions of the cell may experience conflicting error rate requirements. For example, increasing programming voltages to reduce errors in one data portion may inadvertently increase errors in another portion. The system includes a processing device that adjusts programming voltages to intentionally increase the error rate of a first data portion stored in a first portion of the memory cell. This adjustment is made to reduce the error rate of a second data portion stored in a second portion of the same memory cell. The processing device modifies one or more program voltages applied during the programming process, where increasing the error rate of the first data portion corresponds to a decrease in the error rate of the second data portion. This approach balances error rates across different data portions by strategically sacrificing accuracy in one portion to improve accuracy in another, optimizing overall memory reliability. The system may be part of a memory controller or integrated within a memory device, ensuring efficient error management during data storage operations.
8. A method comprising: identifying a first data stored at a first portion of a memory cell and a second data stored at a second portion of the memory cell; determining a first error rate associated with the first data stored at the first portion of the memory cell, the first error rate being adjusted to exceed a second error rate associated with the second data stored at the second portion of the memory cell; determining whether the first error rate exceeds a threshold; and in response to determining that the first error rate exceeds the threshold: providing, by a processing device, the second data stored at the second portion of the memory cell for use in an error correction operation; and providing third data stored at a third portion of the memory cell to a controller associated with the memory cell.
This invention relates to error management in memory systems, specifically for memory cells storing multiple data portions with different error rates. The problem addressed is the efficient handling of data corruption in memory cells where different portions exhibit varying levels of reliability. The method involves analyzing error rates across multiple data portions within a single memory cell to prioritize error correction based on reliability thresholds. A first data portion is identified along with its error rate, which is adjusted to exceed the error rate of a second data portion in the same cell. If the first portion's error rate surpasses a predefined threshold, the second portion's data is used for error correction, while a third data portion is sent to a controller for further processing. This approach optimizes error correction by leveraging more reliable data portions to correct less reliable ones, improving overall data integrity in memory storage systems. The method ensures efficient resource utilization by dynamically selecting data portions based on their error characteristics, reducing the need for extensive error correction operations on highly corrupted data.
9. The method of claim 8 , further comprising: performing the error correction operation on the second data stored at the second portion of memory cell; and providing corrected second data to the second portion of the memory cell.
This invention relates to error correction in memory systems, specifically addressing the challenge of maintaining data integrity in non-volatile memory cells that degrade over time. The method involves a multi-step process to correct errors in data stored across different portions of a memory cell. First, a memory controller identifies a first portion of a memory cell storing first data and a second portion storing second data. The controller then performs an error correction operation on the first data in the first portion, generating corrected first data, which is then written back to the first portion. Subsequently, the same error correction operation is applied to the second data in the second portion, producing corrected second data, which is also written back to the second portion. This ensures that both portions of the memory cell are error-free, improving data reliability in storage systems where memory cells are prone to degradation. The method is particularly useful in flash memory and other non-volatile storage technologies where error rates increase with usage. By sequentially correcting errors in different portions of a memory cell, the system maintains data accuracy without requiring full cell replacement or extensive rewriting operations.
10. The method of claim 9 , wherein the corrected second data is provided to the second portion of the memory cell during a second programming operation performed on the memory cell.
Technical Summary: This invention relates to memory cell programming techniques, specifically addressing errors that occur during data storage in memory cells. The problem being solved involves ensuring accurate data retention in memory cells, particularly when errors arise during programming operations. The invention provides a method to correct such errors by reprogramming a portion of the memory cell with corrected data. The method involves a memory cell divided into at least two portions, where a first programming operation writes initial data to a first portion of the memory cell. If an error is detected in the data stored in the second portion, the method corrects the second data and reprograms the second portion during a second programming operation. This ensures that the corrected data is accurately stored in the second portion of the memory cell. The correction process may involve error detection and correction techniques, such as parity checks or error-correcting codes, to verify and fix the data before reprogramming. By performing a second programming operation specifically targeting the second portion of the memory cell, the method ensures that only the erroneous data is rewritten, minimizing unnecessary reprogramming and improving efficiency. This approach is particularly useful in non-volatile memory systems where data integrity is critical, such as flash memory or solid-state drives. The invention enhances reliability by dynamically correcting errors during the programming process, reducing the likelihood of data corruption.
11. The method of claim 8 , wherein the first error rate associated with the first data stored at the first portion of the memory cell is based on a first programming operation performed on the memory cell.
The invention relates to memory storage systems, specifically methods for managing error rates in non-volatile memory cells. The problem addressed is the variability in error rates across different portions of a memory cell due to different programming operations. When a memory cell is programmed, different portions of the cell may experience different levels of wear or degradation, leading to varying error rates. This can impact data reliability and require complex error correction mechanisms. The method involves determining an error rate for data stored in a first portion of a memory cell, where the error rate is based on a first programming operation applied to that portion. The first programming operation may involve specific voltage levels, pulse durations, or other parameters that influence the physical state of the memory cell. By analyzing the relationship between the programming operation and the resulting error rate, the system can optimize data storage and retrieval processes. This may include adjusting read or write operations to compensate for higher error rates in certain portions of the memory cell. The method may also involve comparing error rates across different portions of the same cell or across multiple cells to improve overall memory performance. The goal is to enhance data integrity and reduce the need for extensive error correction, thereby improving efficiency and reliability in memory storage systems.
12. The method of claim 8 , further comprising: performing a read operation on the first data stored at the first portion of the memory cell; and providing the first data stored at the first portion of the memory cell to the controller associated with the memory cell, wherein determining whether the first error rate exceeds the threshold is based on providing the first data stored at the first portion of the memory cell to the controller associated with the memory cell.
This invention relates to memory systems, specifically methods for error detection and correction in memory cells. The problem addressed is the need to accurately assess and manage data integrity in memory storage, particularly in systems where data is stored in multiple portions of a memory cell. The invention provides a method to evaluate error rates in stored data by reading data from a first portion of a memory cell and providing that data to a controller for analysis. The controller then determines whether the error rate of the data exceeds a predefined threshold, enabling targeted error correction or other mitigation steps. The method ensures reliable data retrieval by leveraging the controller's processing capabilities to assess data integrity before further operations. This approach is particularly useful in memory systems where partial data reads are performed, allowing for efficient error detection without requiring full cell access. The invention improves data reliability by integrating error rate evaluation into the read process, ensuring that only data meeting quality standards is used for subsequent operations.
13. The method of claim 8 , wherein determining the first error rate associated with the first data stored at the first portion of the memory cell further comprises: adjusting the first error rate associated with the first data stored at the first portion of the memory cell by modifying one or more program voltages associated with the first data stored at the first portion of the memory cell.
This invention relates to error rate adjustment in memory storage systems, specifically for improving data reliability in non-volatile memory cells. The problem addressed is the occurrence of errors in stored data due to variations in programming voltages, which can degrade memory performance over time. The solution involves dynamically adjusting error rates by modifying program voltages applied to specific portions of memory cells. The method involves storing data in a memory cell divided into multiple portions, where each portion has an associated error rate. To improve accuracy, the error rate for data stored in a first portion of the memory cell is determined and then adjusted by modifying the program voltages used during data storage. This adjustment compensates for variations in voltage thresholds that can lead to read errors. The process may involve iterative testing and fine-tuning of voltages to minimize errors while maintaining data integrity. The technique is particularly useful in flash memory and other non-volatile storage technologies where voltage fluctuations can impact reliability. By dynamically adjusting program voltages, the system enhances error correction efficiency and extends the lifespan of memory cells.
14. The method of claim 13 , wherein adjusting the first error rate associated with the first data stored at the first portion of the memory cell further comprises modifying the one or more program voltages to increase a subsequent first error rate, and wherein the modifying the one or more program voltages to increase the subsequent first error rate corresponds to a decrease in a subsequent second error rate associated with the second data stored at the second portion of the memory cell.
This invention relates to memory cell programming techniques, specifically optimizing error rates in multi-level memory cells. The problem addressed is balancing error rates between different data portions stored in a single memory cell, where programming one portion can adversely affect the error rate of another portion. The solution involves adjusting program voltages to intentionally increase the error rate of a first data portion while decreasing the error rate of a second data portion stored in the same cell. This trade-off is achieved by modifying the program voltages used during the programming process. The adjustment ensures that the error rate of the second data portion is reduced, improving overall data reliability. The technique is particularly useful in multi-level memory cells where multiple data bits are stored in different portions of the same cell, and programming one bit can disturb the other. By carefully controlling the program voltages, the method optimizes the error rate balance between the two data portions, enhancing the memory cell's performance and reliability.
15. A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to: identify a first data stored at a first portion of a memory cell and a second data stored at a second portion of the memory cell; determine a first error rate associated with the first data stored at the first portion of the memory cell, the first error rate being adjusted to exceed a second error rate associated with the second data stored at the second portion of the memory cell; determine whether the first error rate exceeds a threshold; and in response to determining that the first error rate exceeds the threshold: provide the second data stored at the second portion of the memory cell for use in an error correction operation; and provide third data stored at a third portion of the memory cell to a controller associated with the memory cell.
This invention relates to memory systems and error correction techniques for improving data reliability in storage devices. The problem addressed is the varying error rates across different portions of a memory cell, which can lead to data corruption if not properly managed. The solution involves a method to selectively use data from different portions of a memory cell based on error rate thresholds to enhance error correction and data integrity. The system identifies first data stored in a first portion of a memory cell and second data stored in a second portion of the same memory cell. It then determines a first error rate for the first data, which is adjusted to be higher than a second error rate associated with the second data. The system checks whether the first error rate exceeds a predefined threshold. If it does, the second data from the second portion is used in an error correction operation, while third data from a third portion of the memory cell is provided to a controller for further processing. This approach ensures that data with lower error rates is prioritized for error correction, improving overall reliability. The method leverages multiple data portions within a single memory cell to optimize error handling and data recovery.
16. The non-transitory computer-readable storage medium of claim 15 , wherein the processing device is further to: perform the error correction operation on the second data stored at the second portion of memory cell; and provide corrected second data to the second portion of the memory cell.
This invention relates to error correction in memory systems, specifically for correcting errors in data stored in memory cells. The problem addressed is the occurrence of errors in stored data, which can lead to data corruption and system failures. The solution involves a method and system for performing error correction operations on data stored in memory cells, particularly in scenarios where data is stored in multiple portions of a memory cell. The system includes a processing device configured to perform error correction on data stored in a memory cell. The memory cell is divided into at least two portions, with first data stored in a first portion and second data stored in a second portion. The processing device is configured to perform an error correction operation on the first data stored in the first portion of the memory cell and provide corrected first data to the first portion. Similarly, the processing device performs an error correction operation on the second data stored in the second portion of the memory cell and provides corrected second data to the second portion. This ensures that both portions of the memory cell contain error-corrected data, improving data integrity and reliability. The error correction operations may involve techniques such as error detection and correction codes, parity checks, or other methods to identify and fix errors in the stored data. The system is particularly useful in memory systems where data is stored in multiple portions of a memory cell, such as in multi-level cell (MLC) or triple-level cell (TLC) memory technologies.
17. The non-transitory computer-readable storage medium of claim 16 , wherein the corrected second data is provided to the second portion of the memory cell during a second programming operation performed on the memory cell.
A system and method for improving data storage reliability in memory cells, particularly in non-volatile memory devices, addresses the problem of data corruption due to programming disturbances. The invention involves a multi-step programming process where a memory cell is divided into at least two portions, each storing a portion of the data. During a first programming operation, a first portion of the memory cell is programmed with first data. A second portion of the memory cell is then programmed with second data, but this second data may be corrupted due to programming disturbances from the first operation. To correct this, the system detects errors in the second data and generates corrected second data. This corrected data is then provided to the second portion of the memory cell during a second programming operation, ensuring accurate data storage. The method may involve error detection and correction techniques, such as error-correcting codes (ECC), to verify and repair the data. The invention is particularly useful in high-density memory devices where programming disturbances are more likely to occur, improving overall data integrity and reliability.
18. The non-transitory computer-readable storage medium of claim 15 , wherein the first error rate associated with the first data stored at the first portion of the memory cell is based on a first programming operation performed on the memory cell.
The invention relates to memory storage systems, specifically to techniques for managing error rates in multi-level memory cells. The problem addressed is the variability in error rates across different portions of a memory cell due to differences in programming operations. Multi-level memory cells store multiple bits of data by programming different portions of the cell to distinct voltage levels. However, programming operations can introduce errors, and the error rate varies depending on the portion of the cell being programmed. For example, a first portion of the cell may be programmed with a first voltage level during a first programming operation, resulting in a first error rate, while a second portion may be programmed with a second voltage level during a second programming operation, resulting in a second error rate. The invention provides a method to determine and manage these error rates to improve data reliability. The system includes a memory controller that programs a memory cell by applying a first programming operation to a first portion of the cell and a second programming operation to a second portion. The first programming operation sets the first portion to a first voltage level, and the first error rate is determined based on this operation. Similarly, the second programming operation sets the second portion to a second voltage level, and the second error rate is determined. The memory controller may then adjust read or write operations based on these error rates to ensure data integrity. The invention also includes a non-transitory computer-readable storage medium storing instructions for performing these operations. This approach allows for more accurate error management in multi-level memory cells, enhancing storage reliability.
19. The non-transitory computer-readable storage medium of claim 15 , wherein to determine the first error rate associated with the first data stored at the first portion of the memory cell, the processing device is further to: adjust the first error rate associated with the first data stored at the first portion of the memory cell by modifying one or more program voltages associated with the first data stored at the first portion of the memory cell.
This invention relates to error rate adjustment in memory storage systems, specifically for non-volatile memory cells. The problem addressed is the occurrence of errors in stored data due to variations in programming voltages, which can degrade data integrity over time. The solution involves dynamically adjusting error rates by modifying program voltages applied to specific portions of a memory cell. The system includes a processing device that analyzes stored data in a memory cell, which is divided into multiple portions. The processing device determines an error rate for data stored in a first portion of the cell by evaluating the impact of programming voltages on that data. To improve accuracy, the processing device adjusts the error rate by modifying the program voltages used during the storage of the first data. This adjustment helps mitigate errors caused by voltage variations, ensuring more reliable data retrieval. The invention also involves comparing error rates between different portions of the memory cell to optimize storage conditions. By dynamically adjusting voltages, the system can compensate for wear, environmental factors, or manufacturing inconsistencies, thereby enhancing the overall reliability of the memory storage system. The approach is particularly useful in non-volatile memory technologies like flash memory, where voltage variations can significantly affect data integrity.
20. The non-transitory computer-readable storage medium of claim 19 , wherein to adjust the first error rate associated with the first data stored at the first portion of the memory cell, the processing device is further to modify the one or more program voltages to increase a subsequent first error rate, and wherein the modifying the one or more program voltages to increase the subsequent first error rate corresponds to a decrease in a subsequent second error rate associated with the second data stored at the second portion of the memory cell.
This invention relates to memory storage systems, specifically to techniques for managing error rates in multi-level memory cells. The problem addressed is the trade-off between error rates in different portions of a memory cell when storing multiple data values. In a memory cell storing first and second data in separate portions, adjusting the error rate for the first data by modifying programming voltages can inadvertently affect the error rate of the second data. The invention provides a method to intentionally increase the error rate of the first data by adjusting programming voltages, which in turn decreases the error rate of the second data. This approach balances error rates between the two portions of the memory cell, improving overall data reliability. The technique involves analyzing the error rates of both data portions and dynamically adjusting programming parameters to achieve the desired trade-off. This is particularly useful in multi-level memory cells where different data portions may have conflicting error rate requirements. The solution ensures that adjustments to one data portion do not degrade the performance of the other, maintaining system reliability.
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January 21, 2020
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