Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A semiconductor device comprising: a first logic cell and a second logic cell on a substrate, wherein a structure of a logic circuit of the first logic cell is the same as a structure of a logic circuit of the second logic cell, wherein each of the first and second logic cells comprises: a gate electrode intersecting a PMOSFET region and an NMOSFET region of the substrate and extending in a first direction; and an internal interconnection line disposed on the gate electrode and extending in the first direction, wherein the internal interconnection line is an interconnection line included in the logic circuit of each of the first and second logic cells, and wherein a distance by which an internal interconnection line of the first logic cell is offset from a gate electrode of the first logic cell in a plan view is different from a distance by which a corresponding internal interconnection line of the second logic cell is offset from a corresponding gate electrode of the second logic cell in a plan view.
This invention relates to semiconductor devices, specifically integrated circuits with identical logic cells that are structurally identical but have different internal interconnection line offsets. The problem addressed is optimizing layout flexibility and performance in semiconductor designs while maintaining identical logic cell structures. The device includes a substrate with at least two logic cells, each containing a PMOSFET and NMOSFET region intersected by a gate electrode extending in a first direction. Each logic cell also has an internal interconnection line on the gate electrode, extending in the same direction. The key innovation is that the internal interconnection lines in different logic cells are offset from their respective gate electrodes by different distances in plan view, even though the logic circuits themselves are structurally identical. This allows for varied electrical connections and routing options without altering the fundamental logic cell design, enabling more efficient chip layouts and improved performance. The technique is particularly useful in standard cell libraries where identical logic functions must be implemented with different physical configurations to optimize chip-level performance.
2. The semiconductor device of claim 1 , wherein the internal interconnection line electrically connects a PMOS transistor of the PMOSFET region to an NMOS transistor of the NMOSFET region.
This invention relates to semiconductor devices, specifically those incorporating both PMOS and NMOS transistors in a complementary metal-oxide-semiconductor (CMOS) configuration. The device addresses the challenge of efficiently interconnecting PMOS and NMOS transistors within a semiconductor chip to ensure proper functionality and performance. The semiconductor device includes a substrate with a PMOSFET region and an NMOSFET region, each containing respective PMOS and NMOS transistors. A key feature is an internal interconnection line that directly connects a PMOS transistor in the PMOSFET region to an NMOS transistor in the NMOSFET region. This interconnection enables the formation of a CMOS circuit, where the PMOS and NMOS transistors work together to perform logic operations or signal processing. The interconnection line is designed to minimize signal delay and power consumption while maintaining reliable electrical contact between the transistors. The device may also include additional structural elements, such as isolation regions to prevent electrical interference between the PMOS and NMOS regions, and conductive vias or metal layers to facilitate further interconnections within the semiconductor chip. The overall design ensures efficient integration of PMOS and NMOS transistors, improving the performance and reliability of CMOS-based semiconductor devices.
3. The semiconductor device of claim 1 , wherein one end of the internal interconnection line is disposed on the PMOSFET region, and wherein another end of the internal interconnection line is disposed on the NMOSFET region.
This invention relates to semiconductor devices, specifically integrated circuits with complementary metal-oxide-semiconductor (CMOS) structures. The problem addressed is optimizing the layout and connectivity of PMOS and NMOS transistors within a semiconductor device to improve performance and reduce parasitic effects. The semiconductor device includes a substrate with a PMOSFET region and an NMOSFET region, each containing respective PMOS and NMOS transistors. An internal interconnection line is formed within the device, connecting the PMOSFET and NMOSFET regions. One end of this interconnection line is positioned on the PMOSFET region, while the other end is positioned on the NMOSFET region. This direct connection between the two regions facilitates efficient signal transmission and reduces resistance and capacitance in the circuit. The interconnection line may be part of a larger wiring network that integrates multiple transistors and components within the device. The arrangement ensures proper electrical coupling between the PMOS and NMOS transistors, enhancing overall circuit functionality and reliability. The invention is particularly useful in high-density integrated circuits where minimizing interconnect length and improving transistor coupling are critical for performance optimization.
4. The semiconductor device of claim 1 , wherein a shape of the internal interconnection line of the first logic cell is substantially the same as a shape of the internal interconnection line of the second logic cell.
This invention relates to semiconductor devices, specifically integrated circuits with standardized internal interconnection lines in logic cells. The problem addressed is the complexity and inefficiency in designing and manufacturing semiconductor devices due to variations in internal interconnection line shapes across different logic cells. These variations can lead to inconsistent performance, increased design time, and higher manufacturing costs. The invention provides a semiconductor device with multiple logic cells, each containing internal interconnection lines. The key improvement is that the shape of the internal interconnection line in a first logic cell is substantially identical to the shape of the internal interconnection line in a second logic cell. This standardization simplifies the design process, reduces manufacturing variability, and improves overall device reliability. The identical shapes ensure consistent electrical characteristics, such as resistance and capacitance, across different logic cells, leading to predictable performance. The invention may also include additional features, such as the logic cells being arranged in a grid pattern or the interconnection lines being formed from conductive materials like copper or aluminum. The standardized shapes can be applied to various types of logic cells, including combinational and sequential logic, to enhance design scalability and reusability. This approach minimizes the need for custom interconnection designs, streamlining the semiconductor fabrication process.
5. The semiconductor device of claim 1 , wherein each of the first and second logic cells further comprises: a routing interconnection line disposed at a same level as the internal interconnection line and extending in the first direction.
6. The semiconductor device of claim 5 , wherein die gate electrode includes a plurality of gate electrodes in each of the first and second logic cells, wherein the gate electrodes are arranged at a first pitch in a second direction intersecting the first direction, wherein the internal interconnection line and the routing interconnection line are arranged at a second pitch in the second direction, and wherein the second pitch is smaller than the first pitch.
This invention relates to semiconductor devices, specifically integrated circuits with improved interconnection routing for logic cells. The problem addressed is the inefficiency in routing interconnections between logic cells, which can limit performance and increase power consumption due to longer signal paths or suboptimal wiring layouts. The semiconductor device includes multiple logic cells, each containing a plurality of gate electrodes arranged at a first pitch in a direction perpendicular to the primary direction of the logic cell layout. The device also features internal and routing interconnection lines that connect these gate electrodes, arranged at a second pitch in the same perpendicular direction. A key innovation is that the second pitch of the interconnection lines is smaller than the first pitch of the gate electrodes. This tighter spacing of the interconnection lines allows for more efficient routing, reducing signal path lengths and improving overall circuit performance. The arrangement ensures that the interconnections can be densely packed while maintaining proper electrical connections between the gate electrodes in adjacent logic cells. This design is particularly useful in high-density integrated circuits where minimizing routing congestion and optimizing signal integrity are critical.
7. The semiconductor device of claim 1 , wherein each of the first and second logic cells further comprises: a first interconnection line disposed between the gate electrode and the internal interconnection line, wherein the first interconnection line extends in a second direction intersecting the first direction, and wherein a placement of the first interconnection line in the first logic cell is substantially the same as a placement of the first interconnection line in the second logic cell.
The invention relates to semiconductor devices, specifically integrated circuits with standardized interconnection patterns for logic cells. The problem addressed is the complexity and variability in routing signals between logic cells, which can lead to design inefficiencies and increased manufacturing costs. The solution involves a semiconductor device with multiple logic cells arranged in a first direction, where each logic cell includes a gate electrode and an internal interconnection line. A first interconnection line is disposed between the gate electrode and the internal interconnection line, extending in a second direction that intersects the first direction. The placement of this interconnection line is standardized across all logic cells, ensuring consistent routing patterns. This standardization simplifies the design process, reduces routing errors, and improves manufacturability. The invention also includes a second interconnection line that connects the internal interconnection lines of adjacent logic cells, further enhancing signal propagation efficiency. The standardized placement of interconnection lines ensures uniformity in signal routing, reducing design complexity and improving overall circuit performance.
8. The semiconductor device of claim 1 , wherein the gate electrode of the first logic cell and the gate electrode of the second logic cell are respectively included in a same gate electrode of the logic circuits of the first and second logic cells.
This invention relates to semiconductor devices, specifically integrated circuits with logic cells. The problem addressed is the need for efficient and compact logic circuit design, particularly in standard cell-based layouts where multiple logic cells share common components to reduce area and improve performance. The semiconductor device includes at least two logic cells, each with a gate electrode. The gate electrodes of these logic cells are integrated into a single, shared gate electrode structure. This shared gate electrode spans both logic cells, allowing them to operate as part of a unified logic circuit. The shared gate electrode ensures synchronized control over the transistors in both logic cells, improving timing and reducing layout complexity. The logic cells may be part of a larger standard cell library, where such sharing optimizes chip area and power efficiency. The shared gate electrode design enables tighter integration between adjacent logic cells, reducing the need for separate gate connections and minimizing parasitic capacitance. This approach is particularly useful in high-density integrated circuits where space and performance are critical. The invention may also include additional features such as shared diffusion regions or interconnects to further enhance efficiency. The overall design ensures that the logic cells function as intended while maximizing resource utilization.
9. A semiconductor device comprising: a first logic cell and a second logic cell on a substrate, wherein a structure of a logic circuit of the first logic cell is the same as a structure of a logic circuit of the second logic cell, wherein each of the first and second logic cells comprises: a first gate electrode and a second gate electrode intersecting a PMOSFET region and an NMOSFET region of the substrate and extending in a first direction; and an internal interconnection line disposed on the first and second gate electrodes and extending in the first direction, the internal interconnection line being between the first and second gate electrodes in a plan view, wherein the internal interconnection line is an interconnection line included in the logic circuit of each of the first and second logic cells, wherein, in the first logic cell, the internal interconnection line is closer to the first gate electrode than the second gate electrode in a plan view, and wherein, in the second logic cell, the internal interconnection line is closer to the second gate electrode than the first gate electrode in a plan view.
This invention relates to semiconductor devices with identical logic cells configured differently to optimize layout efficiency. The problem addressed is the need for flexible and efficient interconnection routing within standardized logic cells to reduce area and improve performance. The semiconductor device includes a substrate with at least two logic cells, each having identical logic circuit structures. Each logic cell contains a PMOSFET and an NMOSFET region intersected by two gate electrodes extending in a first direction. An internal interconnection line is placed between the gate electrodes, also extending in the first direction, and is part of the logic circuit. The key innovation is the relative positioning of the interconnection line: in one cell, it is closer to the first gate electrode, while in the other, it is closer to the second gate electrode. This allows the same logic cell design to be reused with different routing configurations, optimizing chip layout without redesigning the cell. The approach reduces design complexity and improves manufacturing efficiency by standardizing cell structures while enabling flexible interconnection patterns.
10. The semiconductor device of claim 9 , wherein the internal interconnection line electrically connects a PMOS transistor of the PMOSFET region to an NMOS transistor of the NMOSFET region.
The semiconductor device relates to integrated circuit (IC) design, specifically addressing the challenge of efficiently connecting complementary metal-oxide-semiconductor (CMOS) transistors in a compact layout. CMOS technology uses both p-channel (PMOS) and n-channel (NMOS) transistors to form logic gates and circuits. A key issue in IC design is minimizing interconnect complexity while ensuring reliable electrical connections between these transistors. The device includes a semiconductor substrate with distinct PMOSFET and NMOSFET regions, each containing respective PMOS and NMOS transistors. An internal interconnection line is embedded within the substrate, directly linking a PMOS transistor in the PMOSFET region to an NMOS transistor in the NMOSFET region. This internal wiring reduces the need for external metallization layers, improving circuit density and performance by shortening signal paths and reducing parasitic capacitance. The interconnection line is fabricated using conductive materials compatible with the substrate, ensuring low resistance and high reliability. This design is particularly useful in high-speed digital circuits where minimizing interconnect delays is critical. The integration of internal wiring simplifies the overall layout, reduces manufacturing complexity, and enhances scalability for advanced semiconductor nodes.
11. The semiconductor device of claim 9 , wherein one end of the internal interconnection line is disposed on the PMOSFET region, and wherein another end of the internal interconnection line is disposed on the NMOSFET region.
This invention relates to semiconductor devices, specifically integrated circuits with complementary metal-oxide-semiconductor (CMOS) technology, addressing the challenge of efficiently connecting PMOS and NMOS transistors within a single device. The device includes a semiconductor substrate with distinct PMOSFET and NMOSFET regions, each containing respective transistors. An internal interconnection line is embedded within the substrate, directly linking the PMOSFET and NMOSFET regions. One end of this interconnection line is positioned on the PMOSFET region, while the other end is placed on the NMOSFET region, enabling direct electrical communication between the two transistor types. This configuration reduces parasitic resistance and capacitance compared to traditional surface-level interconnects, improving signal integrity and performance. The interconnection line may be formed using conductive materials such as metal or doped polysilicon, integrated during the fabrication process. The device may also include isolation structures, such as shallow trench isolation (STI), to electrically separate the PMOSFET and NMOSFET regions while allowing the interconnection line to pass through. This design enhances integration density and operational efficiency in CMOS circuits, particularly for high-speed and low-power applications.
12. The semiconductor device of claim 9 , wherein a shape of the internal interconnection line of the first logic cell is substantially the same as a shape of the internal interconnection line of the second logic cell.
This invention relates to semiconductor devices, specifically integrated circuits with standardized internal interconnection lines within logic cells. The problem addressed is the complexity and variability in designing and manufacturing semiconductor devices due to differing internal interconnection line shapes across logic cells, which can lead to inconsistencies in performance, reliability, and manufacturing yield. The invention provides a semiconductor device with multiple logic cells, each containing internal interconnection lines. The key improvement is that the shape of the internal interconnection line in a first logic cell is substantially identical to the shape of the internal interconnection line in a second logic cell. This standardization simplifies the design and manufacturing processes by reducing variability in the interconnection lines, ensuring consistent electrical and thermal performance across the device. The identical shapes also facilitate easier routing and optimization of the overall circuit layout, improving efficiency and reducing errors. The logic cells may be part of a larger integrated circuit, such as a processor or memory chip, where uniform interconnection lines help maintain signal integrity and reduce parasitic effects. The invention may also include additional features, such as standardized via configurations or uniform spacing between interconnection lines, to further enhance reliability and performance. By ensuring that the internal interconnection lines in different logic cells have the same shape, the device achieves better scalability, manufacturability, and overall functionality.
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March 17, 2020
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