Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A light-emitting device comprising: a first transistor, a second transistor, a third transistor, a capacitor, and a light emitting element, wherein the first transistor includes a first gate electrode, a second gate electrode, and a semiconductor layer comprising a channel formation region, wherein the first transistor has a function of supplying a current to the light emitting element, wherein the semiconductor layer comprises a region interposed between the first gate electrode and the second gate electrode, wherein the first gate electrode is electrically connected to a first wiring through the second transistor, wherein the second gate electrode is electrically connected to a second wiring through the third transistor, wherein the first wiring has a function of supplying a data signal, wherein the second wiring has a function of supplying a potential, wherein one of a source and a drain of the first transistor is directly connected to an electrode of the light emitting element, wherein a first terminal of the capacitor is electrically connected to the first gate electrode and a second terminal of the capacitor is electrically connected to the one of the source and the drain of the first transistor, and wherein the electrode of the light emitting element comprises a region overlapping with the first gate electrode and the second gate electrode.
This invention relates to a light-emitting device, specifically an organic light-emitting diode (OLED) display with improved current control and stability. The device addresses the problem of variations in OLED brightness due to threshold voltage shifts in driving transistors, which degrade display uniformity over time. The device includes a first transistor that supplies current to a light-emitting element, such as an OLED. The first transistor has a dual-gate structure with a first and second gate electrode, both influencing a semiconductor layer's channel formation region. The first gate electrode is connected to a data signal line via a second transistor, while the second gate electrode is connected to a reference potential line via a third transistor. This dual-gate configuration enhances current stability by compensating for threshold voltage variations. A capacitor is connected between the first gate electrode and the source/drain of the first transistor, storing the data signal to maintain consistent current flow. The light-emitting element's electrode overlaps with both gate electrodes, optimizing space efficiency and electrical coupling. The second and third transistors control signal and potential delivery to the first transistor, ensuring precise current regulation. This design improves display uniformity and longevity by mitigating transistor degradation effects.
2. The light-emitting device according to claim 1 , wherein a gate electrode of the second transistor is electrically connected to a third wiring, wherein a gate electrode of the third transistor is electrically connected to a fourth wiring.
A light-emitting device includes a pixel circuit with multiple transistors and a light-emitting element. The device addresses challenges in controlling current flow and voltage stability in display panels, particularly in organic light-emitting diode (OLED) displays. The pixel circuit includes a first transistor that controls current to the light-emitting element, a second transistor that regulates voltage at a node connected to the light-emitting element, and a third transistor that compensates for threshold voltage variations in the first transistor. The second transistor has its gate electrode connected to a third wiring, which allows independent control of the voltage at the node, improving stability and reducing power consumption. The third transistor has its gate electrode connected to a fourth wiring, enabling separate control of the compensation process, which enhances accuracy in adjusting the first transistor's threshold voltage. This configuration ensures uniform brightness and longevity of the light-emitting element by mitigating variations in transistor characteristics over time. The device is particularly useful in high-resolution and large-area displays where precise current control is critical.
3. The light-emitting device according to claim 1 , wherein the semiconductor layer is an oxide semiconductor layer.
A light-emitting device includes a semiconductor layer that emits light when an electric current is applied. The semiconductor layer is an oxide semiconductor layer, which provides advantages such as high electron mobility, transparency, and compatibility with flexible substrates. Oxide semiconductors, typically composed of metal oxides like indium gallium zinc oxide (IGZO), offer improved performance in terms of conductivity and stability compared to traditional silicon-based semiconductors. The device may also include additional layers, such as an electrode layer for current injection and a substrate for structural support. The oxide semiconductor layer enables efficient light emission while maintaining flexibility and durability, making the device suitable for applications in displays, lighting, and optoelectronic systems. The use of an oxide semiconductor enhances the device's efficiency and reliability, addressing challenges related to power consumption and longevity in light-emitting technologies.
4. The light-emitting device according to claim 2 , wherein the semiconductor layer is an oxide semiconductor layer.
A light-emitting device includes a substrate, a first electrode, a second electrode, and a semiconductor layer positioned between the first and second electrodes. The semiconductor layer is an oxide semiconductor layer, which may be composed of an oxide material such as indium gallium zinc oxide (IGZO). The device operates by applying a voltage between the first and second electrodes, causing the semiconductor layer to emit light. The oxide semiconductor layer provides improved electrical and optical properties, such as higher carrier mobility and better stability, compared to traditional semiconductor materials. This enhances the efficiency and reliability of the light-emitting device. The device may be used in displays, lighting, or other applications requiring compact, efficient light sources. The oxide semiconductor layer may be doped or undoped, depending on the desired electrical and optical characteristics. The first and second electrodes are typically conductive materials, such as metals or transparent conductive oxides, to facilitate current flow and light emission. The substrate provides structural support and may be flexible or rigid, depending on the application. The device may also include additional layers, such as insulating or charge injection layers, to optimize performance. The use of an oxide semiconductor layer allows for tunable emission properties, enabling the device to emit light at different wavelengths or intensities.
5. A light-emitting device comprising: a first transistor, a second transistor, a third transistor, a capacitor, and a light emitting element, wherein the first transistor includes a first gate electrode, a second gate electrode, and a semiconductor layer comprising a channel formation region, wherein the first transistor has a function of supplying a current to the light emitting element, wherein the semiconductor layer comprises a region interposed between the first gate electrode and the second gate electrode, wherein the first gate electrode is electrically connected to a first wiring through the second transistor, wherein the second gate electrode is electrically connected to a second wiring through the third transistor, wherein the first gate electrode is not electrically connected to the second gate electrode, wherein the first gate electrode is not electrically connected to an electrode of the light emitting element, wherein the first wiring has a function of supplying a data signal, wherein the second wiring has a function of supplying a potential, wherein one of a source and a drain of the first transistor is directly connected to the electrode of the light emitting element, wherein a first terminal of the capacitor is electrically connected to the first gate electrode and a second terminal of the capacitor is electrically connected to the one of the source and the drain of the first transistor, and wherein the electrode of the light emitting element comprises a region overlapping with the first gate electrode and the second gate electrode.
This invention relates to a light-emitting device, specifically an organic light-emitting diode (OLED) display with improved current control and stability. The device addresses issues in conventional OLED displays where variations in transistor characteristics can lead to uneven brightness and reduced lifespan. The invention features a first transistor with dual gate electrodes (first and second gate electrodes) and a semiconductor layer containing a channel formation region. The first transistor supplies current to a light-emitting element, such as an OLED. The semiconductor layer includes a region between the two gate electrodes, enhancing control over the current flow. The first gate electrode is connected to a data signal via a second transistor, while the second gate electrode is connected to a reference potential via a third transistor. The gate electrodes are electrically isolated from each other and from the light-emitting element's electrode. A capacitor is connected between the first gate electrode and the source/drain of the first transistor, stabilizing the voltage and current. The light-emitting element's electrode overlaps with both gate electrodes, improving thermal and electrical efficiency. This design ensures precise current control, reducing power consumption and extending the device's lifespan.
6. The light-emitting device according to claim 5 , wherein a gate electrode of the second transistor is electrically connected to a third wiring, wherein a gate electrode of the third transistor is electrically connected to a fourth wiring.
A light-emitting device includes a pixel circuit with multiple transistors and wirings to control light emission. The device addresses the challenge of efficiently driving light-emitting elements, such as organic light-emitting diodes (OLEDs), in display applications. The pixel circuit includes a first transistor for driving the light-emitting element, a second transistor for controlling current flow, and a third transistor for resetting or initializing the circuit. The second transistor's gate electrode is connected to a third wiring, which provides a control signal to regulate the transistor's operation. The third transistor's gate electrode is connected to a fourth wiring, allowing independent control of its switching behavior. This configuration enables precise timing and current management, improving display performance and power efficiency. The device may also include additional components, such as capacitors, to stabilize voltage levels and enhance circuit stability. The interconnected transistors and wirings form a compact, high-performance pixel circuit suitable for active-matrix displays.
7. A light-emitting device comprising: a first transistor, a second transistor, a third transistor, a fourth transistor, and a light emitting element, wherein the first transistor includes a first gate electrode, a second gate electrode, and a semiconductor layer comprising a channel formation region, wherein the first transistor has a function of supplying a current to the light emitting element, wherein the semiconductor layer comprises a region interposed between the first gate electrode and the second gate electrode, wherein the first gate electrode is electrically connected to a first wiring through the second transistor, wherein the second gate electrode is electrically connected to a second wiring through the third transistor, wherein the first wiring has a function of supplying a data signal, wherein the second wiring has a function of supplying a potential, wherein one of a source and a drain of the first transistor is electrically connected to an electrode of the light emitting element, wherein the other of the source and the drain of the first transistor is electrically connected to a third wiring through the fourth transistor, wherein the electrode of the light emitting element comprises a region overlapping with the first gate electrode and the second gate electrode.
This invention relates to a light-emitting device, specifically an organic light-emitting diode (OLED) display with improved current control and stability. The device addresses the problem of inconsistent brightness and efficiency in OLED displays due to variations in transistor characteristics and voltage drops over time. The device includes a first transistor that supplies current to a light-emitting element, such as an OLED. The first transistor has a dual-gate structure with a first gate electrode and a second gate electrode, both overlapping a semiconductor layer containing a channel formation region. The region between the two gate electrodes enhances current control and reduces leakage. The first gate electrode is connected to a data signal line through a second transistor, while the second gate electrode is connected to a reference potential line through a third transistor. This dual-gate configuration allows independent control of the transistor's threshold voltage and current flow, improving stability. A fourth transistor connects the first transistor to a power supply line, enabling current modulation. The light-emitting element's electrode overlaps both gate electrodes, ensuring efficient charge injection and minimizing parasitic capacitance. This design improves display uniformity, reduces power consumption, and extends the lifespan of the OLED device. The transistors and light-emitting element are integrated in a compact structure, suitable for high-resolution displays.
8. The light-emitting device according to claim 7 , wherein a gate electrode of the second transistor is electrically connected to a fourth wiring, wherein a gate electrode of the third transistor is electrically connected to a fifth wiring.
A light-emitting device includes a pixel circuit with multiple transistors and a light-emitting element. The device addresses challenges in controlling current flow and voltage stability in display applications. The pixel circuit comprises a first transistor for driving the light-emitting element, a second transistor for controlling electrical connections, and a third transistor for initializing or resetting the circuit. The second transistor has a gate electrode connected to a fourth wiring, which allows external control of the transistor's operation, such as switching or voltage regulation. The third transistor has a gate electrode connected to a fifth wiring, enabling independent control of its function, such as resetting a node in the circuit. These connections improve circuit flexibility and performance by allowing separate control of different transistors, enhancing display uniformity and efficiency. The device is particularly useful in active-matrix displays where precise current control is essential for consistent brightness and color accuracy. The wiring connections ensure proper timing and voltage levels for stable operation, addressing issues like threshold voltage variations and power consumption in display panels.
9. A light-emitting device comprising: a first transistor, a second transistor, a third transistor, a fourth transistor, and a light emitting element, wherein the first transistor includes a first gate electrode, a second gate electrode, and a semiconductor layer comprising a channel formation region, wherein the first transistor has a function of supplying a current to the light emitting element, wherein the semiconductor layer comprises a region interposed between the first gate electrode and the second gate electrode, wherein the first gate electrode is electrically connected to a first wiring through the second transistor, wherein the second gate electrode is electrically connected to a second wiring through the third transistor, wherein the first wiring has a function of supplying a data signal, wherein the second wiring has a function of supplying a potential, wherein one of a source and a drain of the first transistor is electrically connected to an electrode of the light emitting element, wherein the other of the source and the drain of the first transistor is electrically connected to a third wiring through the fourth transistor, wherein the electrode of the light emitting element comprises a region overlapping with the first gate electrode and the second gate electrode, wherein a current corresponding to the data signal is supplied to the light emitting element in a period during which the third transistor is in an off state and the fourth transistor is in an on state.
This invention relates to a light-emitting device, specifically an organic light-emitting diode (OLED) display with improved current control for enhanced brightness and efficiency. The device addresses the challenge of maintaining consistent current flow to the light-emitting element despite variations in transistor characteristics, which can lead to uneven brightness across the display. The device includes a first transistor with dual gate electrodes (first and second) and a semiconductor layer forming a channel region between them. The first gate electrode is connected to a data signal line via a second transistor, while the second gate electrode is connected to a reference potential line via a third transistor. The first transistor supplies current to the light-emitting element, with one of its source/drain terminals connected to the element and the other connected to a power line through a fourth transistor. The light-emitting element's electrode overlaps the first and second gate electrodes, ensuring efficient current distribution. During operation, the third transistor is off and the fourth transistor is on, allowing a current corresponding to the data signal to flow through the light-emitting element. The dual-gate structure stabilizes the current, reducing variations caused by transistor threshold voltage shifts or temperature changes. This design improves display uniformity and longevity by maintaining precise current control.
10. The light-emitting device according to claim 9 , wherein a gate electrode of the second transistor is electrically connected to a fourth wiring, wherein a gate electrode of the third transistor is electrically connected to a fifth wiring.
A light-emitting device includes a pixel circuit with multiple transistors and wirings to control light emission. The device addresses the challenge of efficiently driving light-emitting elements, such as organic light-emitting diodes (OLEDs), by providing precise current control and voltage stabilization. The pixel circuit includes a first transistor that supplies current to a light-emitting element, a second transistor that controls the voltage applied to the first transistor, and a third transistor that resets or initializes the circuit. The second transistor's gate electrode is connected to a fourth wiring, which allows external control of the transistor's operation, such as enabling or disabling current flow. Similarly, the third transistor's gate electrode is connected to a fifth wiring, enabling independent control of its function, such as resetting the circuit or stabilizing voltages. These connections enhance the device's ability to regulate current and voltage, improving display uniformity and efficiency. The wirings provide flexibility in driving the circuit, allowing for complex timing and signal management to optimize light emission. This configuration is particularly useful in active-matrix displays where precise control of each pixel is essential for high-quality imaging.
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April 14, 2020
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