Method for Designating Specific Word-Lines of Data Storage Device as Reserved Word-Lines, and Selecting a Writing Mode Accordingly

1. A method for controlling operations of a data storage device, the data storage device comprising a non-volatile (NV) memory comprising a plurality of NV memory elements, the method comprising: selecting a block from multiple blocks of a NV memory element of the plurality of NV memory elements, the block comprising a plurality of word-lines; designating a first word-line and a last word-line of the selected block as reserved word-lines, and designating the remaining word-lines of the selected block as non-reserved word-lines; receiving a data-writing command from a host device, wherein the data-writing command is one of a plurality of host device commands from the host device; generating a plurality of operating commands corresponding to the data-writing command, and sending the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein data writing is performed through a triple level cell (TLC) writing mode to make each non-reserved word-line of the plurality of non-reserved word-lines comprise multiple pages; modifying physical addresses respectively pointing to at least one portion of word-lines of the block to write a series of data to the plurality of non-reserved word-lines and avoid writing the series of data to the first word-line of the block, wherein the plurality of reserved word-lines comprise the first word-line; and writing user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page.

2. The method of claim 1 , further comprising: writing an end-of-block (EOB) information of the block into the reserved word-line.

3. The method of claim 2 , wherein the block comprises a plurality of virtual blocks, and the EOB information is an EOB information of a virtual block of the plurality of virtual blocks.

4. The method of claim 2 , further comprising: writing a backup of the EOB information to another reserved word-line of the plurality of reserved word-lines via the SLC writing mode to make the another reserved word-line comprise a single page.

5. The method of claim 1 , further comprising: writing other user data to another reserved word-line of the plurality of reserved word-lines via the SLC writing mode to make the another reserved word-line comprise a single page.

6. A data storage device, comprising: a non-volatile (NV) memory, for storing information, wherein the NV memory comprises a plurality of NV memory elements; and a controller, coupled to the NV memory, for controlling operations of the data storage device, wherein the controller comprises: a processing circuit, for controlling the controller according to a plurality of host device commands from a host device to allow the host device to access the NV memory through the controller, wherein: the controller selects a block from a plurality of blocks of a NV memory element of the plurality of NV memory elements, the block comprising a plurality of word-lines; the controller designates a first word-line and a last word-line of the selected block as reserved word-lines, and designates the remaining word-lines of the selected block as non-reserved word-lines; the controller receives a data-writing command from a host device, wherein the data-writing command is one of the plurality of host device commands from the host device; the controller generates a plurality of operating commands corresponding to the data-writing command, and sends the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein the controller performs the data-writing through a triple level cell (TLC) writing mode to make each non-reserved word-line of the plurality of non-reserved word-lines comprise multiple pages; the controller modifies physical addresses respectively pointing to at least one portion of word-lines of the block to write a series of data to the plurality of non-reserved word-lines and avoid writing the series of data to the first word-line of the block, wherein the plurality of reserved word-lines comprise the first word-line; and the controller writes user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page.

7. The data storage device of claim 6 , wherein the controller writes an end-of-block (EOB) information of the block into the reserved word-line.

8. A controller of a data storage device, the data storage device comprising the controller and a non-volatile (NV) memory comprising a plurality of NV memory elements, the controller comprises: a processing circuit, for controlling the controller according to a plurality of host device commands from a host device to allow the host device to access the NV memory through the controller, wherein: the controller selects a block from a plurality of blocks of a NV memory element of the plurality of NV memory elements; the controller designates a first word-line and a last word-line of the selected block as reserved word-lines, and designates the remaining word-lines of the selected block as non-reserved word-lines; the controller receives a data-writing command from a host device, wherein the data-writing command is one of a plurality of host device commands from the host device; the controller generates a plurality of operating commands corresponding to the data-writing command, and sends the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein the controller performs the data-writing through a triple level cell (TLC) writing mode to make each non-reserved word-line of the plurality of non-reserved word-lines comprise multiple pages; the controller modifies physical addresses respectively pointing to at least one portion of word-lines of the block to write a series of data to the plurality of non-reserved word-lines and avoid writing the series of data to the first word-line of the block, wherein the plurality of reserved word-lines comprise the first word-line; and the controller writes user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page.

9. The controller of claim 8 , wherein the controller writes an end-of-block information (EOB information) of the block into the reserved word-line.

10. A method of data writing, which is applicable to a data storage device, the method comprising: selecting a block as an active block, the block being selected from a plurality of blocks comprised in the data storage device; dividing a plurality of word-lines of the active block into at least one reserved word-line and a plurality of non-reserved word-lines, the at least one reserved word-line comprising at least one of a first word-line and a last word-line of the active block; programming a first type of data to the non-reserved word-lines in a preset writing mode; programming a second type of data to the at least one reserved word-line in a non-preset writing mode, wherein the preset writing mode is programmable with more data to each word-line of the word-lines than the non-preset writing mode; and modifying physical addresses respectively pointing to at least one portion of word-lines of the block to write a series of data to the plurality of non-reserved word-lines and avoid writing the series of data to the first word-line of the block, wherein the plurality of reserved word-lines comprise the first word-line.