Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A method for controlling operations of a data storage device, the data storage device comprising a non-volatile (NV) memory comprising a plurality of NV memory elements, the method comprising: selecting a block from multiple blocks of a NV memory element of the plurality of NV memory elements, the block comprising a plurality of word-lines; designating a first word-line and a last word-line of the selected block as reserved word-lines, and designating the remaining word-lines of the selected block as non-reserved word-lines; receiving a data-writing command from a host device, wherein the data-writing command is one of a plurality of host device commands from the host device; generating a plurality of operating commands corresponding to the data-writing command, and sending the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein data writing is performed through a triple level cell (TLC) writing mode to make each non-reserved word-line of the plurality of non-reserved word-lines comprise multiple pages; modifying physical addresses respectively pointing to at least one portion of word-lines of the block to write a series of data to the plurality of non-reserved word-lines and avoid writing the series of data to the first word-line of the block, wherein the plurality of reserved word-lines comprise the first word-line; and writing user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page.
The invention relates to a method for managing data storage operations in a non-volatile (NV) memory device, particularly addressing the challenge of optimizing data writing efficiency and reliability in memory blocks containing multiple word-lines. The method involves selecting a block from a NV memory element, where the block includes multiple word-lines. The first and last word-lines of the selected block are designated as reserved word-lines, while the remaining word-lines are marked as non-reserved. Upon receiving a data-writing command from a host device, the system generates and sends multiple operating commands to the NV memory to perform data-writing on the non-reserved word-lines using a triple level cell (TLC) writing mode, allowing each non-reserved word-line to store multiple pages of data. The method also modifies physical addresses to ensure data is written to the non-reserved word-lines while avoiding the first word-line. Additionally, user data is written into a reserved word-line using a single level cell (SLC) writing mode, resulting in a single page per reserved word-line. This approach improves data storage efficiency by leveraging different writing modes for reserved and non-reserved word-lines, enhancing performance and reliability in NV memory operations.
2. The method of claim 1 , further comprising: writing an end-of-block (EOB) information of the block into the reserved word-line.
A method for managing data storage in a memory device, particularly in a non-volatile memory such as flash memory, addresses the challenge of efficiently tracking and organizing data blocks. The method involves writing an end-of-block (EOB) information into a reserved word-line within a memory block. This EOB information indicates the logical end of the block, allowing the memory controller to accurately identify the valid data range and manage block operations such as wear leveling, garbage collection, and error handling. The reserved word-line is a dedicated storage location within the block, ensuring that the EOB information is reliably stored and easily accessible. By storing the EOB information in this manner, the method improves data integrity and simplifies block management, reducing the risk of data corruption and enhancing overall memory performance. The technique is particularly useful in solid-state drives (SSDs) and other storage systems where efficient block management is critical for reliability and longevity.
3. The method of claim 2 , wherein the block comprises a plurality of virtual blocks, and the EOB information is an EOB information of a virtual block of the plurality of virtual blocks.
This invention relates to video encoding and decoding, specifically improving efficiency in handling end-of-block (EOB) information in block-based video compression. The problem addressed is the inefficiency in signaling EOB information for large blocks, which can lead to redundant data transmission and increased computational overhead. The solution involves dividing a block into multiple virtual blocks and encoding EOB information separately for each virtual block. This allows for more granular control over block termination, reducing unnecessary data transmission and improving compression efficiency. The method includes determining the EOB information for each virtual block within a larger block, encoding this information, and transmitting or storing it in a bitstream. By processing EOB information at the virtual block level, the system avoids the inefficiencies of treating an entire block as a single unit, particularly in scenarios where only a subset of the block contains significant data. This approach enhances compression performance and reduces computational complexity in video encoding and decoding processes.
4. The method of claim 2 , further comprising: writing a backup of the EOB information to another reserved word-line of the plurality of reserved word-lines via the SLC writing mode to make the another reserved word-line comprise a single page.
This invention relates to data storage systems, specifically methods for managing error handling and backup operations in non-volatile memory devices, such as flash memory. The problem addressed is ensuring data integrity and reliability in memory systems where errors may occur during write operations, particularly in systems using Single-Level Cell (SLC) writing modes. The method involves writing a backup of End-of-Block (EOB) information to a reserved word-line in the memory device. The EOB information is critical for identifying the end of a block of data and ensuring proper data retrieval. By writing this backup in SLC mode, the system ensures that the backup is stored in a single page, which simplifies recovery processes and reduces the risk of data corruption. The SLC writing mode is used because it provides higher reliability and faster write speeds compared to other modes, making it suitable for backup operations. The reserved word-line is specifically allocated for this purpose, ensuring that the backup does not interfere with regular data storage operations. This approach enhances the system's ability to recover from errors by providing a reliable backup of essential metadata.
5. The method of claim 1 , further comprising: writing other user data to another reserved word-line of the plurality of reserved word-lines via the SLC writing mode to make the another reserved word-line comprise a single page.
This invention relates to memory storage systems, specifically methods for managing reserved word-lines in non-volatile memory devices to improve data storage efficiency and reliability. The problem addressed is the inefficient use of reserved word-lines in memory storage, which can lead to wasted storage capacity and reduced performance. The invention provides a solution by utilizing a single-level cell (SLC) writing mode to write user data to reserved word-lines, ensuring that each reserved word-line contains only a single page of data. This approach optimizes storage space by preventing partial or unused word-lines, which can degrade overall memory efficiency. The method involves selecting a reserved word-line from a plurality of reserved word-lines in a memory device and writing user data to that word-line using the SLC writing mode. The SLC writing mode is chosen because it allows for faster write operations and higher reliability compared to multi-level cell (MLC) modes. By ensuring that each reserved word-line contains only a single page, the method prevents fragmentation and maximizes the usable storage capacity of the memory device. This technique is particularly useful in solid-state drives (SSDs) and other non-volatile memory systems where efficient use of reserved storage is critical for performance and longevity. The invention improves data management by ensuring that reserved word-lines are fully utilized without wasting storage space, thereby enhancing the overall efficiency and reliability of the memory system.
6. A data storage device, comprising: a non-volatile (NV) memory, for storing information, wherein the NV memory comprises a plurality of NV memory elements; and a controller, coupled to the NV memory, for controlling operations of the data storage device, wherein the controller comprises: a processing circuit, for controlling the controller according to a plurality of host device commands from a host device to allow the host device to access the NV memory through the controller, wherein: the controller selects a block from a plurality of blocks of a NV memory element of the plurality of NV memory elements, the block comprising a plurality of word-lines; the controller designates a first word-line and a last word-line of the selected block as reserved word-lines, and designates the remaining word-lines of the selected block as non-reserved word-lines; the controller receives a data-writing command from a host device, wherein the data-writing command is one of the plurality of host device commands from the host device; the controller generates a plurality of operating commands corresponding to the data-writing command, and sends the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein the controller performs the data-writing through a triple level cell (TLC) writing mode to make each non-reserved word-line of the plurality of non-reserved word-lines comprise multiple pages; the controller modifies physical addresses respectively pointing to at least one portion of word-lines of the block to write a series of data to the plurality of non-reserved word-lines and avoid writing the series of data to the first word-line of the block, wherein the plurality of reserved word-lines comprise the first word-line; and the controller writes user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page.
This invention relates to a data storage device with improved memory management for non-volatile (NV) memory, particularly addressing wear leveling and performance optimization in triple level cell (TLC) and single level cell (SLC) storage configurations. The device includes NV memory with multiple memory elements, each containing blocks of word-lines. A controller manages operations, selecting a block and designating its first and last word-lines as reserved, while the remaining word-lines are non-reserved. The controller processes host device commands, including data-writing commands, generating operating commands to perform TLC writing on non-reserved word-lines, creating multiple pages per word-line. Physical addresses are modified to direct data away from the first word-line, ensuring it remains unused for user data. User data is instead written to reserved word-lines using SLC mode, resulting in a single page per word-line. This approach enhances endurance by reducing wear on frequently accessed word-lines and improves performance by leveraging SLC mode for critical data while utilizing TLC mode for bulk storage. The system dynamically manages word-line allocation to balance performance and longevity in NV memory storage.
7. The data storage device of claim 6 , wherein the controller writes an end-of-block (EOB) information of the block into the reserved word-line.
A data storage device, such as a solid-state drive (SSD) or flash memory device, is designed to improve data management and reliability by efficiently handling block-level operations. The device includes a memory array with multiple blocks, each containing multiple word-lines for storing data. A controller manages data storage and retrieval operations, including wear leveling, garbage collection, and error correction. To enhance performance and reliability, the controller writes end-of-block (EOB) information into a reserved word-line within a block. This reserved word-line is not used for regular data storage but instead stores metadata or control information. The EOB information indicates the logical end of valid data within the block, helping the controller efficiently track and manage data boundaries. This approach prevents data corruption, improves read/write efficiency, and ensures accurate data recovery during operations like garbage collection or wear leveling. By reserving a word-line for EOB information, the device avoids overwriting critical metadata, reduces the risk of data loss, and optimizes storage utilization. This method is particularly useful in flash memory, where block-level operations are common and maintaining accurate data boundaries is essential for long-term reliability. The controller dynamically updates the EOB information as data is written or erased, ensuring the system remains aware of the current state of each block.
8. A controller of a data storage device, the data storage device comprising the controller and a non-volatile (NV) memory comprising a plurality of NV memory elements, the controller comprises: a processing circuit, for controlling the controller according to a plurality of host device commands from a host device to allow the host device to access the NV memory through the controller, wherein: the controller selects a block from a plurality of blocks of a NV memory element of the plurality of NV memory elements; the controller designates a first word-line and a last word-line of the selected block as reserved word-lines, and designates the remaining word-lines of the selected block as non-reserved word-lines; the controller receives a data-writing command from a host device, wherein the data-writing command is one of a plurality of host device commands from the host device; the controller generates a plurality of operating commands corresponding to the data-writing command, and sends the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein the controller performs the data-writing through a triple level cell (TLC) writing mode to make each non-reserved word-line of the plurality of non-reserved word-lines comprise multiple pages; the controller modifies physical addresses respectively pointing to at least one portion of word-lines of the block to write a series of data to the plurality of non-reserved word-lines and avoid writing the series of data to the first word-line of the block, wherein the plurality of reserved word-lines comprise the first word-line; and the controller writes user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page.
This invention relates to a controller for a data storage device, specifically addressing efficient data management in non-volatile (NV) memory. The problem solved involves optimizing data storage and retrieval in NV memory, particularly in triple level cell (TLC) configurations, while ensuring reliability and performance. The controller manages a NV memory comprising multiple memory elements, each with multiple blocks. When a block is selected, the controller designates the first and last word-lines as reserved, while the remaining word-lines are non-reserved. Upon receiving a data-writing command from a host device, the controller generates operating commands to perform TLC writing on the non-reserved word-lines, allowing each to store multiple pages of data. The controller modifies physical addresses to ensure data is written to non-reserved word-lines, avoiding the first word-line. Additionally, user data is written to a reserved word-line using a single level cell (SLC) writing mode, resulting in a single page per reserved word-line. This approach improves data storage efficiency and reliability by segregating reserved and non-reserved word-lines, optimizing TLC and SLC writing modes for different data types.
9. The controller of claim 8 , wherein the controller writes an end-of-block information (EOB information) of the block into the reserved word-line.
A system for managing data storage in a memory device addresses the challenge of efficiently tracking and organizing data blocks within a memory array. The system includes a controller that manages the writing and reading of data blocks to and from the memory array, which comprises multiple word-lines and bit-lines. The controller is configured to reserve a specific word-line within the memory array for storing metadata associated with data blocks. This reserved word-line is used to store end-of-block information (EOB information) for each block, which indicates the logical end of a data block within the memory array. The EOB information helps the controller accurately identify the boundaries of each data block, ensuring proper data retrieval and management. The controller also handles the distribution of data blocks across the memory array, ensuring efficient use of storage space and maintaining data integrity. By storing EOB information in the reserved word-line, the system simplifies the process of tracking block boundaries, reducing the risk of data corruption and improving overall storage efficiency. The reserved word-line serves as a dedicated metadata storage location, allowing the controller to quickly access and update block-related information without disrupting the main data storage operations. This approach enhances the reliability and performance of the memory device, particularly in applications requiring frequent read and write operations.
10. A method of data writing, which is applicable to a data storage device, the method comprising: selecting a block as an active block, the block being selected from a plurality of blocks comprised in the data storage device; dividing a plurality of word-lines of the active block into at least one reserved word-line and a plurality of non-reserved word-lines, the at least one reserved word-line comprising at least one of a first word-line and a last word-line of the active block; programming a first type of data to the non-reserved word-lines in a preset writing mode; programming a second type of data to the at least one reserved word-line in a non-preset writing mode, wherein the preset writing mode is programmable with more data to each word-line of the word-lines than the non-preset writing mode; and modifying physical addresses respectively pointing to at least one portion of word-lines of the block to write a series of data to the plurality of non-reserved word-lines and avoid writing the series of data to the first word-line of the block, wherein the plurality of reserved word-lines comprise the first word-line.
This invention relates to data storage devices, specifically methods for optimizing data writing in non-volatile memory such as flash memory. The problem addressed is inefficient data storage and wear leveling, particularly in systems where certain word-lines (e.g., first or last word-lines in a block) are prone to higher wear or require special handling. The method involves selecting an active block from a plurality of blocks in a storage device. The word-lines within this block are divided into reserved and non-reserved word-lines, with the reserved word-lines including at least the first and/or last word-lines of the block. A first type of data is programmed to the non-reserved word-lines using a preset writing mode, which allows storing more data per word-line compared to a non-preset writing mode. A second type of data is programmed to the reserved word-lines using the non-preset mode. Additionally, physical addresses are modified to direct data writing to the non-reserved word-lines while avoiding the first word-line, ensuring efficient use of storage space and reducing wear on critical word-lines. This approach improves data storage efficiency, extends device lifespan, and optimizes performance by selectively managing word-line usage.
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May 5, 2020
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