Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A substrate treatment device comprising: a substrate rotation part that horizontally holds and rotates a substrate; a nozzle that supplies a treatment liquid to a surface to be treated of said substrate rotated by said substrate rotation part; an imaging part that captures an image of an imaging area including a plurality of target areas in which a liquid film of said surface to be treated is formed when said treatment liquid is supplied to said substrate; and a detection part that refers to an imaging result of said imaging part and detects a treatment ending time point of each of said plurality of target areas based on a change in luminance value for each of said plurality of target areas, wherein said imaging area includes at least an area on a center side of said surface to be treated and an area on an outer circumferential side of said surface to be treated as said plurality of target areas.
This invention relates to apparatus for treating substrates and specifically addresses the challenge of precisely determining when a treatment liquid film has achieved a desired state on a rotating substrate. The device includes a component for horizontally holding and rotating a substrate. A nozzle is positioned to dispense a treatment liquid onto the surface of this rotating substrate. An imaging component captures visual data of a defined area on the substrate's surface where a liquid film is forming. This imaging area is configured to encompass multiple specific zones, including regions near the center of the substrate and regions towards its outer edge. A detection system analyzes the captured images, focusing on changes in luminance values within these identified target areas. Based on these luminance changes, the detection system determines an optimal treatment ending time for each individual target area on the substrate.
2. The substrate treatment device according to claim 1 , wherein said detection part compares differences in magnitude between a differential value of said luminance value and a threshold and detects said treatment ending time point based on a result of the comparison.
A substrate treatment device monitors and controls the treatment process of a substrate, such as a semiconductor wafer or display panel, by analyzing luminance values during treatment. The device includes a detection part that evaluates the treatment progress by comparing the differential value of the luminance signal against a predefined threshold. The detection part calculates the differential value of the luminance signal, which represents the rate of change in brightness during treatment. By comparing this differential value to a threshold, the device determines when the treatment has reached its endpoint. If the differential value falls below the threshold, indicating a significant reduction in luminance change, the device identifies this as the treatment ending time point. This method ensures precise control over the treatment process, preventing over-treatment or under-treatment by dynamically assessing the substrate's condition in real time. The system is particularly useful in processes where treatment effectiveness is visually observable through changes in luminance, such as etching, cleaning, or coating applications. The detection part's ability to analyze luminance differentials provides a more accurate and responsive endpoint detection mechanism compared to static threshold-based methods.
3. The substrate treatment device according to claim 2 , wherein when a fluctuation width of said differential value falls within a specific range in a state where said differential value becomes larger than said threshold and then becomes smaller than said threshold or in a state where said differential value becomes smaller than said threshold and then becomes larger than said threshold, said detection part detects a time point at which said fluctuation width falls within said range as said treatment ending time point.
This invention relates to a substrate treatment device designed to monitor and control the treatment process of a substrate, such as in semiconductor manufacturing or other precision applications. The device addresses the challenge of accurately determining the optimal endpoint for substrate treatment, ensuring consistent quality and efficiency. The device includes a detection system that calculates a differential value representing the rate of change of a monitored parameter during treatment. This parameter could be related to etching, deposition, or other processes. The detection system compares the differential value against a predefined threshold to identify significant changes in the treatment process. When the differential value crosses the threshold—either increasing above it and then decreasing below it, or vice versa—the system evaluates the fluctuation width of the differential value. If this fluctuation falls within a specified range, the system identifies the time point when this occurs as the treatment endpoint. This approach ensures precise endpoint detection by accounting for both the magnitude and stability of process changes, reducing errors caused by noise or transient fluctuations. The method improves process control, leading to better substrate uniformity and yield. The invention is particularly useful in applications where treatment endpoints must be determined dynamically based on real-time process data.
4. The substrate treatment device according to claim 1 , wherein said detection part detects said treatment ending time point of each of said plurality of target areas based on a change in average luminance value for each of said plurality of target areas, the average luminance value being averaged with a time width larger than time required for one rotation of said substrate.
This invention relates to a substrate treatment device used in processes such as etching or cleaning, where precise control of treatment duration is critical. The device addresses the challenge of determining the optimal treatment ending time for different areas of a substrate, ensuring uniform processing without over-treatment or under-treatment. The system includes a detection part that monitors treatment progress by analyzing changes in average luminance values across multiple target areas on the substrate. The luminance values are averaged over a time window longer than the substrate's rotation period, smoothing out short-term fluctuations and providing a stable measurement. By tracking these averaged luminance values, the detection part identifies the exact moment when treatment should end for each target area, ensuring consistent results across the entire substrate. This approach improves process accuracy and efficiency by dynamically adjusting treatment duration based on real-time optical feedback, rather than relying on fixed time intervals or pre-programmed settings. The invention is particularly useful in semiconductor manufacturing and other precision industries where substrate uniformity is critical.
5. The substrate treatment device according to claim 4 , wherein said imaging part acquires a plurality of captured images with said time width, and said average luminance value is an average value of said luminance value for each of said plurality of target areas in said plurality of captured images.
This invention relates to a substrate treatment device used in manufacturing processes, particularly for inspecting substrates such as semiconductor wafers or glass panels. The device addresses the challenge of accurately detecting defects or irregularities on substrates during high-speed production, where lighting conditions and surface reflections can interfere with imaging quality. The device includes an imaging part that captures images of the substrate surface. To improve detection accuracy, the imaging part acquires multiple captured images over a defined time width, rather than a single snapshot. Each captured image contains luminance values for target areas on the substrate. The device then calculates an average luminance value for each target area by averaging the luminance values across the multiple images. This averaging process reduces noise and variability caused by transient lighting fluctuations or surface reflections, enhancing defect detection reliability. The imaging part may use a line sensor or area sensor to scan the substrate, and the time width for capturing multiple images can be adjusted based on substrate movement speed or inspection requirements. By analyzing averaged luminance values, the device can more consistently identify defects, such as scratches, particles, or uneven coatings, even under varying environmental conditions. This approach improves manufacturing yield by minimizing false positives and ensuring accurate defect mapping.
6. The substrate treatment device according to claim 4 , wherein said imaging part acquires one captured image with said time width taken as an exposure time, and said average luminance value is an average value of said luminance value for each of said plurality of target areas in said one captured image.
A substrate treatment device is used in semiconductor or display manufacturing to inspect substrates for defects during processing. A key challenge is accurately detecting defects under varying lighting conditions and substrate reflectivity. The device includes an imaging system that captures images of the substrate surface to analyze defects. To improve detection accuracy, the imaging system acquires a single captured image with a specific exposure time, which is determined based on a predefined time width. The luminance values of multiple target areas within this single image are then averaged to determine an average luminance value for defect analysis. This approach ensures consistent defect detection by normalizing variations in lighting and substrate reflectivity across the target areas. The imaging system may also include a light source and optical components to illuminate and focus on the substrate surface, enhancing image clarity. The device may further incorporate a control unit to process the captured images and compare the average luminance values against predefined thresholds to identify defects. This method improves defect detection reliability in substrate treatment processes.
7. The substrate treatment device according to claim 1 , wherein the supply of said treatment liquid by said nozzle is stopped when said detection part detects said treatment ending time point of each of said plurality of target areas.
This invention relates to a substrate treatment device designed to apply a treatment liquid to a substrate in a controlled manner. The device addresses the challenge of precisely managing the application of treatment liquid to multiple target areas on a substrate, ensuring efficient and uniform treatment while avoiding excess liquid usage or uneven distribution. The device includes a nozzle for dispensing the treatment liquid onto the substrate and a detection part that monitors the treatment process. The detection part identifies the treatment ending time point for each of the plurality of target areas on the substrate. When the detection part determines that the treatment ending time point has been reached for a specific target area, the supply of treatment liquid from the nozzle is automatically stopped for that area. This ensures that each target area receives the appropriate amount of treatment liquid without over-application, optimizing the treatment process. The device may also include a movement mechanism to position the nozzle relative to the substrate, allowing precise targeting of the treatment liquid. The detection part can use various sensing methods, such as optical or chemical detection, to determine when the treatment process for a given area is complete. By stopping the liquid supply at the exact ending time point for each area, the device enhances treatment efficiency, reduces waste, and ensures consistent results across the substrate.
8. The substrate treatment device according to claim 1 , further comprising a notification part that notifies a warning when said detection part has not detected said treatment ending time point of each of said plurality of target areas upon stopping of the supply of said treatment liquid by said nozzle.
A substrate treatment device is used to apply a treatment liquid to a substrate, such as a semiconductor wafer or display panel, to modify its surface properties. The device includes a nozzle that dispenses the treatment liquid onto the substrate and a detection part that monitors the treatment process to determine when the treatment liquid has been fully applied to each target area of the substrate. The detection part identifies the treatment ending time point for each target area, indicating when the treatment liquid has been sufficiently applied. If the supply of treatment liquid is stopped before the detection part confirms that all target areas have reached their treatment ending time points, the device generates a warning notification. This ensures that incomplete treatment is flagged, preventing defects in the substrate. The notification part may use visual, auditory, or other alerts to inform the operator of the incomplete treatment. The device may also include a control part that adjusts the treatment process based on the detection results to improve uniformity and efficiency. The system helps maintain high-quality substrate processing by ensuring all areas receive the required treatment.
9. The substrate treatment device according to claim 1 , further comprising an adjustment part that adjusts a condition of substrate treatment based on a detection result of said detection part when a plurality of said substrates are treated with said treatment liquid.
A substrate treatment device is used in semiconductor or flat panel display manufacturing to apply treatment liquids to substrates, such as wafers or glass panels, for processes like etching, cleaning, or coating. A key challenge in such systems is ensuring uniform treatment across multiple substrates, as variations in treatment conditions can lead to defects or reduced yield. The device includes a detection part that monitors treatment conditions, such as liquid flow rate, temperature, or chemical concentration, during processing. The detection part generates data that reflects the treatment status, which is then analyzed to identify deviations or inconsistencies. To address these issues, the device includes an adjustment part that dynamically modifies treatment parameters—such as liquid supply rate, temperature control, or agitation speed—based on the detection results. This ensures that each substrate in a batch receives consistent treatment, improving uniformity and yield. The adjustment part may also compensate for variations between substrates, such as differences in surface properties or prior processing steps, by fine-tuning the treatment conditions in real time. This closed-loop feedback system enhances process control and reduces defects caused by inconsistent treatment. The invention is particularly useful in high-volume manufacturing environments where maintaining precise treatment conditions is critical.
10. The substrate treatment device according to claim 1 , further comprising a prediction part that predicts a secular change in each part of the device based on a detection result of said detection part when a plurality of said substrates are treated with said treatment liquid.
A substrate treatment device is used in semiconductor or display manufacturing to apply treatment liquids to substrates, such as wafers or glass panels. Over time, components of the device degrade due to wear, contamination, or chemical reactions, leading to reduced performance or defects in treated substrates. This degradation, known as secular change, must be monitored to maintain quality and prevent downtime. The device includes a detection part that monitors operational parameters, such as liquid flow rates, temperature, or pressure, during substrate treatment. A prediction part analyzes these detection results to forecast how each component will degrade over time. By processing data from multiple substrate treatments, the prediction part identifies trends and estimates when maintenance or replacement is needed. This proactive approach ensures consistent treatment quality and minimizes unplanned interruptions. The prediction part may use statistical models, machine learning, or other analytical techniques to correlate detection data with component lifespan. For example, it might detect gradual clogging in a liquid delivery nozzle or degradation in a heating element, then predict when performance will fall below acceptable thresholds. The system can alert operators or trigger automated adjustments to maintain optimal conditions. This technology addresses the challenge of maintaining substrate treatment consistency by predicting and mitigating component degradation before it affects production. It is particularly valuable in high-precision manufacturing environments where even minor deviations can lead to costly defects.
11. The substrate treatment device according to claim 1 , wherein said treatment liquid is an etching liquid.
A substrate treatment device is designed to process substrates, such as semiconductor wafers or glass panels, by applying a treatment liquid to their surfaces. The device includes a substrate holder to secure the substrate during treatment, a liquid supply system to deliver the treatment liquid, and a control system to manage the treatment process. The treatment liquid can be any liquid used to modify the substrate surface, such as cleaning, coating, or etching solutions. In this specific configuration, the treatment liquid is an etching liquid, which chemically removes material from the substrate surface to create precise patterns or structures. The device may also include mechanisms for controlling liquid flow, temperature, and exposure time to ensure uniform and accurate etching. The etching process is critical in semiconductor manufacturing, where precise material removal is required for device fabrication. The device may further incorporate sensors to monitor the etching progress and adjust parameters in real time to maintain consistency. The system ensures high precision and repeatability, which are essential for advanced semiconductor and display manufacturing processes.
12. A substrate treatment method comprising: a substrate rotation step of horizontally holding and rotating a substrate; a supply step of supplying a treatment liquid to a surface to be treated of said substrate rotated by said substrate rotation step; an imaging step of capturing an image of an imaging area including a plurality of target areas in which a liquid film of said surface to be treated is formed when said treatment liquid is supplied to said substrate; and a detection step of referring to an imaging result in said imaging step and detecting a treatment ending time point of each of said plurality of target areas based on a change in luminance value for each of said plurality of target areas, wherein said imaging area includes at least an area on a center side of said surface to be treated and an area on an outer circumferential side of said surface to be treated as said plurality of target areas.
This invention relates to a method for treating substrates, such as semiconductor wafers, by rotating the substrate horizontally while supplying a treatment liquid to its surface. The method includes capturing images of multiple target areas on the substrate's surface, including regions near the center and outer edge, to monitor the formation and behavior of the liquid film. By analyzing changes in luminance values in these areas, the system determines the optimal time to end the treatment for each region. This ensures uniform processing across the entire substrate, addressing inconsistencies that can arise due to variations in liquid distribution or evaporation rates. The imaging step captures data from both central and peripheral regions, allowing precise detection of treatment completion based on real-time optical feedback. The method improves process control in semiconductor manufacturing, chemical mechanical planarization (CMP), or other substrate treatment applications where uniform liquid film behavior is critical. The detection step dynamically adjusts treatment duration for different areas, enhancing yield and reducing defects caused by over- or under-processing.
13. The substrate treatment method according to claim 12 , wherein in said detection step, differences in magnitude between a differential value of said luminance value and a threshold are compared, to detect said treatment ending time point based on a result of the comparison.
This invention relates to substrate treatment methods, specifically for detecting the ending time point of a treatment process. The method involves monitoring the treatment process by capturing images of the substrate at regular intervals and analyzing the luminance values of these images. The luminance values are used to generate a differential value, which is then compared to a threshold. The treatment ending time point is determined by evaluating the differences in magnitude between this differential value and the threshold. This approach allows for precise detection of when the treatment process has completed, ensuring optimal treatment results. The method is particularly useful in industrial applications where consistent and accurate treatment monitoring is required. By comparing the differential luminance values to a threshold, the system can reliably identify the exact moment when the treatment should be terminated, improving efficiency and reducing waste. The technique leverages image analysis to provide real-time feedback, enabling automated control of the treatment process. This ensures that the substrate is treated uniformly and effectively, meeting quality standards while minimizing resource consumption. The method is adaptable to various treatment processes, including but not limited to chemical, thermal, or mechanical treatments, where visual changes in the substrate indicate the completion of the process.
14. The substrate treatment method according to claim 13 , wherein when a fluctuation width of said differential value falls within a specific range in a state where said differential value becomes larger than said threshold and then becomes smaller than said threshold or in a state where said differential value becomes smaller than said threshold and then becomes larger than said threshold, a time point at which said fluctuation width falls within said range is detected as said treatment ending time point in said detection step.
This invention relates to a method for treating a substrate, specifically focusing on detecting the optimal ending time for the treatment process. The method addresses the challenge of precisely determining when to stop substrate treatment to ensure consistent quality and efficiency. The treatment involves monitoring a differential value derived from measurements of the substrate's properties during the process. The differential value is compared against a predefined threshold to assess the treatment progress. The method detects fluctuations in this differential value to determine the treatment endpoint. When the differential value crosses the threshold in either direction (increasing above or decreasing below the threshold) and then reverses, the system evaluates the fluctuation width of the differential value. If this fluctuation width falls within a specified range, the time point when this occurs is identified as the treatment ending time. This approach ensures that the treatment stops at the most effective moment, avoiding under- or over-treatment. The method enhances process control by dynamically adjusting the endpoint based on real-time data, improving substrate quality and reducing waste.
15. The substrate treatment method according to claim 12 , wherein in said detection step, said treatment ending time point of each of said plurality of target areas is detected based on a change in average luminance value for each of said plurality of target areas, the average luminance value being averaged with a time width larger than time required for one rotation of said substrate.
This invention relates to a substrate treatment method, specifically for detecting the treatment ending time point of multiple target areas on a rotating substrate. The method addresses the challenge of accurately determining when treatment, such as etching or coating, has completed across different regions of a substrate, which is essential for uniform processing in semiconductor or display manufacturing. The method involves illuminating the substrate and capturing images of multiple target areas during treatment. A detection step analyzes the images to determine the treatment ending time point for each target area. This is done by calculating the average luminance value for each area, using a time-averaging window wider than the substrate's rotation period. The change in this averaged luminance value indicates when treatment has ended for each area. This approach ensures that transient fluctuations due to rotation are smoothed out, providing a reliable endpoint detection. The method is particularly useful in processes where treatment progress varies across the substrate, such as in plasma etching or chemical vapor deposition. By monitoring luminance changes over a time window longer than the rotation period, the system avoids false readings caused by rotational artifacts, improving accuracy and consistency in treatment termination. The technique can be applied to any rotating substrate treatment system where endpoint detection is critical.
16. The substrate treatment method according to claim 15 , wherein in said imaging step, a plurality of captured images are acquired with said time width, and said average luminance value is an average value of said luminance value for each of said plurality of target areas in said plurality of captured images.
This invention relates to substrate treatment methods, specifically improving image-based monitoring of substrate surfaces during processing. The problem addressed is the difficulty in accurately detecting defects or variations in substrate surfaces due to noise, uneven lighting, or dynamic processing conditions. The solution involves capturing multiple images of the substrate surface over a defined time interval and analyzing these images to derive an average luminance value for specific target areas. This averaging process reduces noise and improves detection accuracy by mitigating the effects of transient fluctuations in lighting or surface conditions. The method ensures consistent monitoring by evaluating multiple images rather than relying on a single snapshot, enhancing reliability in defect detection or process control. The technique is particularly useful in semiconductor manufacturing, flat panel display production, or other precision substrate processing applications where surface quality is critical. By averaging luminance values across multiple images, the method provides a more stable and representative measurement of substrate surface characteristics, improving overall process control and defect detection accuracy.
17. The substrate treatment method according to claim 15 , wherein in said imaging step, one captured image is acquired with said time width taken as an exposure time, and said average luminance value is an average value of said luminance value for each of said plurality of target areas in said one captured image.
This invention relates to a substrate treatment method involving imaging and analysis of a substrate surface to detect defects or irregularities. The method addresses the challenge of accurately capturing and analyzing substrate features under varying lighting conditions or surface reflections, which can obscure defects. The process includes illuminating the substrate, capturing an image of the substrate surface, and analyzing the image to determine an average luminance value for multiple target areas within the captured image. The exposure time for the image is set to a specific time width, ensuring consistent lighting conditions during capture. The average luminance value is calculated by averaging the luminance values of each target area within a single captured image, providing a reliable measurement for defect detection. This approach improves accuracy by reducing variability caused by transient lighting changes or surface reflections, enabling more precise identification of defects or irregularities on the substrate. The method is particularly useful in semiconductor manufacturing, where surface quality is critical for device performance. By standardizing the exposure time and averaging luminance values across multiple target areas, the technique enhances defect detection reliability in automated inspection systems.
18. The substrate treatment method according to claim 12 , wherein said supply step is stopped when said treatment ending time point of each of said plurality of target areas is detected in said detection step.
This invention relates to substrate treatment methods, specifically for controlling the treatment process in a system where multiple target areas on a substrate are treated simultaneously. The problem addressed is ensuring precise treatment termination for each target area to avoid over-treatment or under-treatment, which can lead to defects or inefficiencies in the manufacturing process. The method involves detecting a treatment ending time point for each of the target areas during the treatment process. Once this time point is detected, the supply of treatment material (such as a chemical, energy, or other processing agent) to the substrate is stopped. This ensures that each target area receives the exact required treatment duration, preventing inconsistencies across the substrate. The detection step may involve monitoring parameters such as temperature, chemical concentration, or other process indicators specific to each target area. The supply step involves delivering the treatment material to the substrate, which can be adjusted or halted based on the detection results. By stopping the supply at the precise ending time point for each area, the method improves uniformity and efficiency in substrate treatment, particularly in applications like semiconductor manufacturing, flat panel display production, or other precision material processing fields.
19. The substrate treatment method according to claim 12 , further comprising a notification step of notifying a warning when said treatment ending time point of each of said plurality of target areas has not been detected by said detection step upon stopping of said supply step.
This invention relates to a substrate treatment method for processing multiple target areas on a substrate, particularly in semiconductor manufacturing or similar precision applications. The method addresses the challenge of ensuring complete and uniform treatment across all target areas, which is critical for yield and quality in high-precision processes. The method involves supplying a treatment agent to the substrate, where the treatment agent reacts with or modifies the substrate surface. A detection step monitors the treatment progress in each target area, determining when the treatment has reached a predefined ending time point, indicating completion. If the treatment ending time point is not detected in any target area when the supply of the treatment agent is stopped, a notification step issues a warning. This ensures operators are alerted to incomplete treatment, preventing defects or rework. The method may also include controlling the supply of the treatment agent based on the detected ending time points, ensuring efficient use of materials and minimizing waste. The detection step may involve measuring reaction byproducts, temperature changes, or other indicators of treatment progress. The notification step may trigger visual, auditory, or digital alerts to prompt corrective action. This approach improves process reliability and reduces the risk of defective substrates due to incomplete treatment.
20. The substrate treatment method according to claim 12 , further comprising an adjustment step of adjusting a condition of substrate treatment based on a plurality of detection results by said detection step when a plurality of said substrates are treated with said treatment liquid.
This invention relates to a substrate treatment method for adjusting treatment conditions based on detection results when multiple substrates are processed with a treatment liquid. The method involves treating substrates with a treatment liquid, detecting a characteristic of the treatment liquid or substrate during processing, and adjusting the treatment conditions based on multiple detection results. The adjustment step ensures consistent treatment quality across multiple substrates by dynamically modifying parameters such as treatment liquid flow rate, temperature, or exposure time in response to detected variations. The detection step may involve measuring properties like viscosity, concentration, or substrate surface conditions to identify deviations from optimal processing conditions. By analyzing multiple detection results, the method compensates for inconsistencies in the treatment process, improving uniformity and yield in substrate manufacturing. The invention is particularly useful in semiconductor or display panel fabrication, where precise control of treatment conditions is critical for high-quality production. The method enhances process stability by continuously monitoring and adjusting treatment parameters, reducing defects and improving overall efficiency.
21. The substrate treatment method according to claim 12 , further comprising a prediction step of predicting a secular change in each part of the device based on a plurality of detection results by said detection step when a plurality of said substrates are treated with said treatment liquid.
This invention relates to substrate treatment methods, specifically for predicting and managing secular changes in device performance during repeated substrate processing. The method addresses the problem of gradual degradation or variation in treatment effectiveness over time due to factors like treatment liquid aging, equipment wear, or environmental changes. The core process involves treating substrates with a treatment liquid while monitoring performance through a detection step that measures relevant parameters. The key innovation is a prediction step that analyzes multiple detection results from treating multiple substrates to forecast how different parts of the device will change over time. This predictive capability enables proactive adjustments to maintain consistent treatment quality. The detection step may involve measuring physical, chemical, or electrical properties of the treated substrates or the treatment system itself. The prediction step uses this data to model and anticipate secular changes, allowing for timely corrective actions. This approach improves process stability and yield in manufacturing environments where substrate treatment consistency is critical, such as semiconductor fabrication or display production. The method is particularly useful for identifying subtle trends that might otherwise go unnoticed until they cause defects or reduce performance.
22. The substrate treatment method according to claim 12 , wherein said treatment liquid is an etching liquid.
This invention relates to a method for treating substrates, specifically using an etching liquid to modify the substrate surface. The method involves applying a treatment liquid to a substrate, where the liquid is an etching solution designed to selectively remove material from the substrate. The etching process may be controlled to achieve precise material removal, surface texturing, or pattern formation. The method can be applied to various substrates, including semiconductors, metals, or other materials requiring precise surface modification. The etching liquid may contain chemical agents that react with the substrate material, dissolving or altering it in a controlled manner. The process may include steps such as liquid application, dwell time, rinsing, and drying to ensure uniform treatment. The method is particularly useful in semiconductor manufacturing, where precise etching is critical for device fabrication. The invention addresses the need for controlled and repeatable substrate surface modification, improving manufacturing consistency and yield.
Unknown
May 12, 2020
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