Method of Fabricating Organic Light-Emitting Diode Touch Display Screen

1. A method of fabricating an organic light-emitting diode (OLED) touch display screen, the OLED touch display screen comprising a pixel region located at a middle portion of the OLED touch display screen and a bonding region at an outer side of the pixel region, the method comprising: a step S 1 of providing a base substrate and forming a thin film transistor (TFT) layer and an OLED light emitting layer on the base substrate in sequence; a step S 2 of depositing and forming a first insulating layer on the OLED light emitting layer; a step S 3 of depositing, pattering, and forming a bridging point layer on the first insulating layer; a step S 4 of depositing and forming a second insulating layer on the bridging point layer and the first insulating layer; coating a photoresist material on the second insulating layer, and exposing and developing the photoresist material to obtain a photoresist layer; a step S 5 of performing a dry etching process on the first insulating layer and the second insulating layer by using the photoresist layer as a shielding layer, so as to form: first contact holes passing through the second insulating layer and located above the bridging point layer in the pixel region; and second contact holes passing through the first insulating layer and the second insulating layer and formed in the bonding region; wherein the dry etching process is specifically of: at first, etching the first insulating layer and the second insulating layer by a first etching gas until the first contact holes are formed or a thickness of the second insulating layer exposed by the photoresist layer is less than 100 Å, then continuing etching the first insulating layer and the second insulating layer by a second etching gas to form all of the first contact holes and the second contact holes, wherein an etching selectivity ratio of the second etching gas to the first insulating layer and the bridging point layer is greater than 5; a step S 6 of depositing, pattering, and forming an electrode circuit layer on the second insulating layer; and a step S 7 of forming a protective layer on the second insulating layer and the electrode circuit layer.

2. The method of fabricating the OLED touch display screen according to claim 1 , wherein in the step S 5 , the first etching gas has an etching rate of the second insulating layer greater than 100 Å/S, and the etching selectivity ratio of the second etching gas to the first insulating layer and the bridging point layer is greater than an etching selectivity ratio of the first etching gas to the first insulating layer and the bridging point layer.

3. The method of fabricating the OLED touch display screen according to claim 1 , wherein in the step S 5 , the first etching gas comprises sulfur hexafluoride and oxygen.

4. The method of fabricating the OLED touch display screen according to claim 1 , wherein in the step S 5 , the second etching gas comprises trichloromethane.

5. The method of fabricating the OLED touch display screen according to claim 1 , wherein material of both of the first insulating layer and the second insulating layer is silicon nitride.

6. The method of fabricating the OLED touch display screen according to claim 1 , wherein: in the step S 1 , the TFT layer comprises a source/drain electrode layer including touch lines in the bonding region; in the step S 3 , the bridging point layer comprises a plurality of metal bridges in the pixel region; and in the step S 6 , the electrode circuit layer comprises at least two first electrodes, at least one second electrode, and a plurality of third electrodes, wherein the at least two first electrodes are connected with the metal bridges through the first contact holes, and the third electrodes are connected with the touch lines in the bonding region through the second contact holes.

7. The method of fabricating the OLED touch display screen according to claim 1 , wherein in the step S 3 , a specific process of patterning and forming the bridging point layer comprises a photoresist coating step, an exposing step, a developing step, an etching step, and a photoresist removing step, all of which are performed in sequence, wherein the etching step of pattering the bridging point layer is performed by a dry etching process.

8. The method of fabricating the OLED touch display screen according to claim 1 , wherein in the step S 6 , a specific process of pattering and forming the electrode circuit layer comprises a photoresist coating step, an exposing step, a developing step, an etching step, and a photoresist removing step, all of which are performed in sequence, wherein the etching step of patterning the electrode circuit layer is performed by a dry etching process.

9. The method of fabricating the OLED touch display screen according to claim 1 , wherein in the step S 7 , material of the protective layer is an inorganic material, and a specific process of forming the protective layer comprises a depositing inorganic material film step, a photoresist coating step, an exposing step, a developing step, an etching step, and a photoresist removing step, all of which are performed in sequence, wherein the etching step of forming the protective layer is performed by a dry etching process.

10. The method of fabricating the OLED touch display screen according to claim 1 , wherein in the step S 7 , the material of the protective layer is an organic material, and a specific process of forming the protective layer comprises an organic material coating step, an exposing step, and a developing step, all of which are performed in sequence.