10727284

Method of Fabricating Organic Light-Emitting Diode Touch Display Screen

PublishedJuly 28, 2020
Assigneenot available in USPTO data we have
Technical Abstract

Patent Claims
10 claims

Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.

Claim 1

Original Legal Text

1. A method of fabricating an organic light-emitting diode (OLED) touch display screen, the OLED touch display screen comprising a pixel region located at a middle portion of the OLED touch display screen and a bonding region at an outer side of the pixel region, the method comprising: a step S 1 of providing a base substrate and forming a thin film transistor (TFT) layer and an OLED light emitting layer on the base substrate in sequence; a step S 2 of depositing and forming a first insulating layer on the OLED light emitting layer; a step S 3 of depositing, pattering, and forming a bridging point layer on the first insulating layer; a step S 4 of depositing and forming a second insulating layer on the bridging point layer and the first insulating layer; coating a photoresist material on the second insulating layer, and exposing and developing the photoresist material to obtain a photoresist layer; a step S 5 of performing a dry etching process on the first insulating layer and the second insulating layer by using the photoresist layer as a shielding layer, so as to form: first contact holes passing through the second insulating layer and located above the bridging point layer in the pixel region; and second contact holes passing through the first insulating layer and the second insulating layer and formed in the bonding region; wherein the dry etching process is specifically of: at first, etching the first insulating layer and the second insulating layer by a first etching gas until the first contact holes are formed or a thickness of the second insulating layer exposed by the photoresist layer is less than 100 Å, then continuing etching the first insulating layer and the second insulating layer by a second etching gas to form all of the first contact holes and the second contact holes, wherein an etching selectivity ratio of the second etching gas to the first insulating layer and the bridging point layer is greater than 5; a step S 6 of depositing, pattering, and forming an electrode circuit layer on the second insulating layer; and a step S 7 of forming a protective layer on the second insulating layer and the electrode circuit layer.

Plain English Translation

A method for fabricating an Organic Light-Emitting Diode (OLED) touch display screen, which includes a central pixel region and an outer bonding region. The process involves first providing a base substrate and sequentially forming a thin film transistor (TFT) layer and an OLED light emitting layer. Next, a first insulating layer is deposited on the OLED layer, followed by a patterned bridging point layer on the first insulating layer. A second insulating layer is then deposited over both the bridging point layer and the first insulating layer, and a photoresist layer is formed on top of the second insulating layer. Crucially, a dry etching process is performed using this photoresist layer as a mask to simultaneously create two types of contact holes: shallow first contact holes in the pixel region (passing only through the second insulating layer) and deeper second contact holes in the bonding region (passing through both the first and second insulating layers). This dry etching uses a two-stage gas combination: an initial etch with a first gas until the shallow holes are formed or the exposed second insulating layer is less than 100 Å, followed by a second gas that completes both sets of holes, featuring an etching selectivity ratio greater than 5 for the second gas to protect underlying layers like the first insulating layer and bridging point layer. Finally, an electrode circuit layer is formed on the second insulating layer, and then a protective layer is formed over the second insulating layer and the electrode circuit layer.

Claim 2

Original Legal Text

2. The method of fabricating the OLED touch display screen according to claim 1 , wherein in the step S 5 , the first etching gas has an etching rate of the second insulating layer greater than 100 Å/S, and the etching selectivity ratio of the second etching gas to the first insulating layer and the bridging point layer is greater than an etching selectivity ratio of the first etching gas to the first insulating layer and the bridging point layer.

Plain English Translation

A method for fabricating an Organic Light-Emitting Diode (OLED) touch display screen, which includes a central pixel region and an outer bonding region. The process involves first providing a base substrate and sequentially forming a thin film transistor (TFT) layer and an OLED light emitting layer. Next, a first insulating layer is deposited on the OLED layer, followed by a patterned bridging point layer on the first insulating layer. A second insulating layer is then deposited over both the bridging point layer and the first insulating layer, and a photoresist layer is formed on top of the second insulating layer. Crucially, a dry etching process is performed using this photoresist layer as a mask to simultaneously create two types of contact holes: shallow first contact holes in the pixel region (passing only through the second insulating layer) and deeper second contact holes in the bonding region (passing through both the first and second insulating layers). This dry etching uses a two-stage gas combination: an initial etch with a first gas until the shallow holes are formed or the exposed second insulating layer is less than 100 Å, followed by a second gas that completes both sets of holes. In this dry etching step, the first etching gas quickly etches the second insulating layer at a rate exceeding 100 Angstroms per second (Å/S). Additionally, the second etching gas has a significantly higher etching selectivity ratio (greater than 5) to the first insulating layer and the bridging point layer compared to the selectivity ratio of the first etching gas to these layers, ensuring better protection for underlying structures during the final etching phase. Finally, an electrode circuit layer is formed on the second insulating layer, and then a protective layer is formed over the second insulating layer and the electrode circuit layer.

Claim 3

Original Legal Text

3. The method of fabricating the OLED touch display screen according to claim 1 , wherein in the step S 5 , the first etching gas comprises sulfur hexafluoride and oxygen.

Plain English Translation

A method for fabricating an Organic Light-Emitting Diode (OLED) touch display screen, which includes a central pixel region and an outer bonding region. The process involves first providing a base substrate and sequentially forming a thin film transistor (TFT) layer and an OLED light emitting layer. Next, a first insulating layer is deposited on the OLED layer, followed by a patterned bridging point layer on the first insulating layer. A second insulating layer is then deposited over both the bridging point layer and the first insulating layer, and a photoresist layer is formed on top of the second insulating layer. Crucially, a dry etching process is performed using this photoresist layer as a mask to simultaneously create two types of contact holes: shallow first contact holes in the pixel region (passing only through the second insulating layer) and deeper second contact holes in the bonding region (passing through both the first and second insulating layers). This dry etching uses a two-stage gas combination: an initial etch with a first gas until the shallow holes are formed or the exposed second insulating layer is less than 100 Å, followed by a second gas that completes both sets of holes, featuring an etching selectivity ratio greater than 5 for the second gas to protect underlying layers. The first etching gas, used in the initial phase of this dry etching, is specifically composed of sulfur hexafluoride (SF6) and oxygen (O2). Finally, an electrode circuit layer is formed on the second insulating layer, and then a protective layer is formed over the second insulating layer and the electrode circuit layer.

Claim 4

Original Legal Text

4. The method of fabricating the OLED touch display screen according to claim 1 , wherein in the step S 5 , the second etching gas comprises trichloromethane.

Plain English Translation

A method for fabricating an Organic Light-Emitting Diode (OLED) touch display screen, which includes a central pixel region and an outer bonding region. The process involves first providing a base substrate and sequentially forming a thin film transistor (TFT) layer and an OLED light emitting layer. Next, a first insulating layer is deposited on the OLED layer, followed by a patterned bridging point layer on the first insulating layer. A second insulating layer is then deposited over both the bridging point layer and the first insulating layer, and a photoresist layer is formed on top of the second insulating layer. Crucially, a dry etching process is performed using this photoresist layer as a mask to simultaneously create two types of contact holes: shallow first contact holes in the pixel region (passing only through the second insulating layer) and deeper second contact holes in the bonding region (passing through both the first and second insulating layers). This dry etching uses a two-stage gas combination: an initial etch with a first gas until the shallow holes are formed or the exposed second insulating layer is less than 100 Å, followed by a second gas that completes both sets of holes. This second etching gas, which completes the formation of both contact holes, is specifically composed of trichloromethane (CHCl3) and has an etching selectivity ratio greater than 5 to protect underlying layers. Finally, an electrode circuit layer is formed on the second insulating layer, and then a protective layer is formed over the second insulating layer and the electrode circuit layer.

Claim 5

Original Legal Text

5. The method of fabricating the OLED touch display screen according to claim 1 , wherein material of both of the first insulating layer and the second insulating layer is silicon nitride.

Plain English Translation

A method for fabricating an Organic Light-Emitting Diode (OLED) touch display screen, which includes a central pixel region and an outer bonding region. The process involves first providing a base substrate and sequentially forming a thin film transistor (TFT) layer and an OLED light emitting layer. Next, a first insulating layer is deposited on the OLED layer, followed by a patterned bridging point layer on the first insulating layer. A second insulating layer is then deposited over both the bridging point layer and the first insulating layer, and a photoresist layer is formed on top of the second insulating layer. Both the first and second insulating layers are specifically made of silicon nitride. Crucially, a dry etching process is performed using this photoresist layer as a mask to simultaneously create two types of contact holes: shallow first contact holes in the pixel region (passing only through the second insulating layer) and deeper second contact holes in the bonding region (passing through both the first and second insulating layers). This dry etching uses a two-stage gas combination: an initial etch with a first gas until the shallow holes are formed or the exposed second insulating layer is less than 100 Å, followed by a second gas that completes both sets of holes, featuring an etching selectivity ratio greater than 5 for the second gas to protect underlying layers. Finally, an electrode circuit layer is formed on the second insulating layer, and then a protective layer is formed over the second insulating layer and the electrode circuit layer.

Claim 6

Original Legal Text

6. The method of fabricating the OLED touch display screen according to claim 1 , wherein: in the step S 1 , the TFT layer comprises a source/drain electrode layer including touch lines in the bonding region; in the step S 3 , the bridging point layer comprises a plurality of metal bridges in the pixel region; and in the step S 6 , the electrode circuit layer comprises at least two first electrodes, at least one second electrode, and a plurality of third electrodes, wherein the at least two first electrodes are connected with the metal bridges through the first contact holes, and the third electrodes are connected with the touch lines in the bonding region through the second contact holes.

Plain English Translation

A method for fabricating an Organic Light-Emitting Diode (OLED) touch display screen, which includes a central pixel region and an outer bonding region. The process involves first providing a base substrate and sequentially forming a thin film transistor (TFT) layer, which includes a source/drain electrode layer containing touch lines in the bonding region, and an OLED light emitting layer. Next, a first insulating layer is deposited on the OLED layer, followed by a patterned bridging point layer on the first insulating layer, where this bridging point layer comprises multiple metal bridges in the pixel region. A second insulating layer is then deposited over both the bridging point layer and the first insulating layer, and a photoresist layer is formed on top. Crucially, a dry etching process is performed using this photoresist layer as a mask to simultaneously create two types of contact holes: shallow first contact holes in the pixel region (passing only through the second insulating layer, located above the metal bridges) and deeper second contact holes in the bonding region (passing through both the first and second insulating layers). This dry etching uses a two-stage gas combination: an initial etch with a first gas until the shallow holes are formed or the exposed second insulating layer is less than 100 Å, followed by a second gas that completes both sets of holes, featuring an etching selectivity ratio greater than 5 for the second gas. Finally, an electrode circuit layer is formed on the second insulating layer, which comprises at least two first electrodes, at least one second electrode, and several third electrodes. The first electrodes connect with the metal bridges through the first contact holes, and the third electrodes connect with the touch lines in the bonding region through the second contact holes. A protective layer is then formed over the second insulating layer and the electrode circuit layer.

Claim 7

Original Legal Text

7. The method of fabricating the OLED touch display screen according to claim 1 , wherein in the step S 3 , a specific process of patterning and forming the bridging point layer comprises a photoresist coating step, an exposing step, a developing step, an etching step, and a photoresist removing step, all of which are performed in sequence, wherein the etching step of pattering the bridging point layer is performed by a dry etching process.

Plain English Translation

A method for fabricating an Organic Light-Emitting Diode (OLED) touch display screen, which includes a central pixel region and an outer bonding region. The process involves first providing a base substrate and sequentially forming a thin film transistor (TFT) layer and an OLED light emitting layer. Next, a first insulating layer is deposited on the OLED layer. Following this, a bridging point layer is deposited, patterned, and formed on the first insulating layer; this patterning specifically involves a photoresist coating step, an exposing step, a developing step, a dry etching step, and a photoresist removing step, all performed in sequence. A second insulating layer is then deposited over both the bridging point layer and the first insulating layer, and a photoresist layer is formed on top. Crucially, a dry etching process is performed using this photoresist layer as a mask to simultaneously create two types of contact holes: shallow first contact holes in the pixel region (passing only through the second insulating layer) and deeper second contact holes in the bonding region (passing through both the first and second insulating layers). This dry etching uses a two-stage gas combination: an initial etch with a first gas until the shallow holes are formed or the exposed second insulating layer is less than 100 Å, followed by a second gas that completes both sets of holes, featuring an etching selectivity ratio greater than 5 for the second gas. Finally, an electrode circuit layer is formed on the second insulating layer, and then a protective layer is formed over the second insulating layer and the electrode circuit layer.

Claim 8

Original Legal Text

8. The method of fabricating the OLED touch display screen according to claim 1 , wherein in the step S 6 , a specific process of pattering and forming the electrode circuit layer comprises a photoresist coating step, an exposing step, a developing step, an etching step, and a photoresist removing step, all of which are performed in sequence, wherein the etching step of patterning the electrode circuit layer is performed by a dry etching process.

Plain English Translation

A method for fabricating an Organic Light-Emitting Diode (OLED) touch display screen, which includes a central pixel region and an outer bonding region. The process involves first providing a base substrate and sequentially forming a thin film transistor (TFT) layer and an OLED light emitting layer. Next, a first insulating layer is deposited on the OLED layer, followed by a patterned bridging point layer on the first insulating layer. A second insulating layer is then deposited over both the bridging point layer and the first insulating layer, and a photoresist layer is formed on top. Crucially, a dry etching process is performed using this photoresist layer as a mask to simultaneously create two types of contact holes: shallow first contact holes in the pixel region (passing only through the second insulating layer) and deeper second contact holes in the bonding region (passing through both the first and second insulating layers). This dry etching uses a two-stage gas combination: an initial etch with a first gas until the shallow holes are formed or the exposed second insulating layer is less than 100 Å, followed by a second gas that completes both sets of holes, featuring an etching selectivity ratio greater than 5 for the second gas. After this, an electrode circuit layer is deposited, patterned, and formed on the second insulating layer; this patterning specifically involves a photoresist coating step, an exposing step, a developing step, a dry etching step, and a photoresist removing step, all performed in sequence. Finally, a protective layer is formed over the second insulating layer and the electrode circuit layer.

Claim 9

Original Legal Text

9. The method of fabricating the OLED touch display screen according to claim 1 , wherein in the step S 7 , material of the protective layer is an inorganic material, and a specific process of forming the protective layer comprises a depositing inorganic material film step, a photoresist coating step, an exposing step, a developing step, an etching step, and a photoresist removing step, all of which are performed in sequence, wherein the etching step of forming the protective layer is performed by a dry etching process.

Plain English Translation

A method for fabricating an Organic Light-Emitting Diode (OLED) touch display screen, which includes a central pixel region and an outer bonding region. The process involves first providing a base substrate and sequentially forming a thin film transistor (TFT) layer and an OLED light emitting layer. Next, a first insulating layer is deposited on the OLED layer, followed by a patterned bridging point layer on the first insulating layer. A second insulating layer is then deposited over both the bridging point layer and the first insulating layer, and a photoresist layer is formed on top. Crucially, a dry etching process is performed using this photoresist layer as a mask to simultaneously create two types of contact holes: shallow first contact holes in the pixel region (passing only through the second insulating layer) and deeper second contact holes in the bonding region (passing through both the first and second insulating layers). This dry etching uses a two-stage gas combination: an initial etch with a first gas until the shallow holes are formed or the exposed second insulating layer is less than 100 Å, followed by a second gas that completes both sets of holes, featuring an etching selectivity ratio greater than 5 for the second gas. An electrode circuit layer is then formed on the second insulating layer. Finally, a protective layer is formed over the second insulating layer and the electrode circuit layer, where this protective layer is made of an inorganic material and its formation specifically involves a depositing inorganic material film step, a photoresist coating step, an exposing step, a developing step, a dry etching step, and a photoresist removing step, all performed in sequence.

Claim 10

Original Legal Text

10. The method of fabricating the OLED touch display screen according to claim 1 , wherein in the step S 7 , the material of the protective layer is an organic material, and a specific process of forming the protective layer comprises an organic material coating step, an exposing step, and a developing step, all of which are performed in sequence.

Plain English Translation

A method for fabricating an Organic Light-Emitting Diode (OLED) touch display screen, which includes a central pixel region and an outer bonding region. The process involves first providing a base substrate and sequentially forming a thin film transistor (TFT) layer and an OLED light emitting layer. Next, a first insulating layer is deposited on the OLED layer, followed by a patterned bridging point layer on the first insulating layer. A second insulating layer is then deposited over both the bridging point layer and the first insulating layer, and a photoresist layer is formed on top. Crucially, a dry etching process is performed using this photoresist layer as a mask to simultaneously create two types of contact holes: shallow first contact holes in the pixel region (passing only through the second insulating layer) and deeper second contact holes in the bonding region (passing through both the first and second insulating layers). This dry etching uses a two-stage gas combination: an initial etch with a first gas until the shallow holes are formed or the exposed second insulating layer is less than 100 Å, followed by a second gas that completes both sets of holes, featuring an etching selectivity ratio greater than 5 for the second gas. An electrode circuit layer is then formed on the second insulating layer. Finally, a protective layer is formed over the second insulating layer and the electrode circuit layer, where this protective layer is made of an organic material and its formation specifically involves an organic material coating step, an exposing step, and a developing step, all performed in sequence.

Patent Metadata

Filing Date

Unknown

Publication Date

July 28, 2020

Inventors

Xiaoliang FENG

Want to explore more patents?

Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.

Citation & reuse

Analysis on this page is generated by Patentable — an AI-powered patent intelligence platform. AI-generated summaries, explanations, FAQs, and analysis may be reused with attribution and a visible link back to the canonical URL below. Patent abstracts and claims are USPTO public domain.

Cite as: Patentable. “METHOD OF FABRICATING ORGANIC LIGHT-EMITTING DIODE TOUCH DISPLAY SCREEN” (10727284). https://patentable.app/patents/10727284

© 2026 Nomic Interactive Technology LLC. Machine-readable context available at /api/llm-context/10727284. See llms.txt for full attribution policy.

METHOD OF FABRICATING ORGANIC LIGHT-EMITTING DIODE TOUCH DISPLAY SCREEN