Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A sensor structure: a photodetector landed and directly on a planar top surface of a waveguide structure, adjacent to one or more shallow trench isolation (STI) structures; and an encapsulating material of a single material fully encapsulating and surrounding the photodetector, wherein the encapsulating material extends across and directly contacts a top surface of the photodetector, and the encapsulating material is landed fully on and within confines of the waveguide structure.
This invention relates to an integrated photodetector structure designed for optical communication systems, addressing challenges in efficient light detection and integration with waveguide-based optical circuits. The structure includes a photodetector directly landed on a planar top surface of a waveguide, positioned adjacent to one or more shallow trench isolation (STI) structures. The photodetector is fully encapsulated by a single material that surrounds and directly contacts its top surface, ensuring uniform optical and electrical performance. The encapsulating material is confined entirely within the waveguide structure, preventing interference with adjacent components. The STI structures provide electrical isolation while maintaining optical alignment. This design improves light coupling efficiency, reduces parasitic effects, and enhances integration density in photonic integrated circuits. The direct contact between the encapsulating material and the photodetector ensures stable operation under varying environmental conditions. The waveguide structure supports guided light propagation, while the photodetector converts optical signals into electrical signals with minimal loss. The overall configuration enables compact, high-performance optical detection in integrated circuits.
2. The sensor structure of claim 1 , wherein the waveguide structure is bounded by one or more shallow trench isolation (STI) structures.
The invention relates to an improved sensor structure for integrated photonics, addressing challenges in optical signal detection and isolation. The sensor structure includes a waveguide for guiding optical signals, with the waveguide bounded by one or more shallow trench isolation (STI) structures. These STI structures provide electrical and optical isolation, reducing crosstalk and signal interference between adjacent components. The waveguide is designed to support the propagation of optical signals while maintaining high signal integrity. The STI structures are formed by etching trenches into the substrate and filling them with an insulating material, such as silicon dioxide, to electrically isolate the waveguide from surrounding regions. This isolation prevents unwanted electrical coupling and enhances the sensor's performance by minimizing noise and improving sensitivity. The sensor structure may be part of a larger integrated photonic circuit, where precise control of optical and electrical signals is critical. The use of STI structures ensures reliable operation in dense integration environments, making the sensor suitable for applications in optical communication, sensing, and signal processing. The invention improves upon existing sensor designs by incorporating STI-based isolation, which enhances signal quality and reduces fabrication complexity.
3. The sensor structure of claim 1 , wherein the photodetector is fully landed and directly on the planar top surface of the waveguide structure, adjacent to the one or more STI structures.
This invention relates to an integrated sensor structure for optical detection, addressing challenges in photodetector placement and optical coupling efficiency in semiconductor devices. The structure includes a waveguide for guiding light and a photodetector positioned directly on the waveguide's planar top surface, ensuring optimal light coupling. The photodetector is fully landed, meaning it fully covers the waveguide's top surface, and is placed adjacent to one or more shallow trench isolation (STI) structures. These STI structures electrically isolate the photodetector from adjacent components while maintaining precise alignment with the waveguide. The waveguide structure may include a core layer for light propagation and cladding layers to confine the light within the core. The photodetector is designed to absorb light from the waveguide efficiently, converting it into an electrical signal. The direct placement of the photodetector on the waveguide eliminates the need for intermediate coupling layers, reducing optical losses and improving detection sensitivity. The STI structures ensure electrical isolation while allowing close proximity between the waveguide and photodetector, enhancing overall performance. This design is particularly useful in photonic integrated circuits where compact, high-efficiency optical detection is required.
4. The sensor structure of claim 1 , wherein the waveguide structure is tapered.
A sensor structure includes a waveguide structure integrated with a sensing region to detect changes in an environment. The waveguide structure is tapered, meaning its cross-sectional dimensions gradually decrease along its length. This tapering can enhance light confinement, improve coupling efficiency, or modify propagation characteristics within the waveguide. The sensing region interacts with the environment, causing measurable changes in optical properties such as refractive index, absorption, or scattering. These changes are detected and analyzed to derive information about the environment, such as the presence of specific substances or physical conditions. The tapered waveguide structure may be used in applications like chemical sensing, biological detection, or environmental monitoring, where precise and efficient light guidance is critical. The tapering can be linear, exponential, or follow another profile to optimize performance for the specific sensing application. The overall design ensures that the sensor structure maintains sensitivity and reliability while minimizing signal loss and interference.
5. The sensor structure of claim 1 , wherein the waveguide structure is continuously tapered.
A sensor structure includes a waveguide structure integrated with a sensing region to detect changes in an environment. The waveguide structure is continuously tapered, meaning its cross-sectional dimensions gradually decrease along its length. This tapering improves light confinement and enhances sensitivity by increasing interaction between the guided light and the sensing region. The sensing region may include a material that responds to environmental changes, such as chemical or biological interactions, by altering optical properties like refractive index or absorption. The tapered waveguide structure ensures efficient light propagation while maximizing interaction with the sensing region, leading to improved detection accuracy. The sensor may be used in applications like chemical sensing, biosensing, or environmental monitoring, where precise and reliable measurements are required. The continuous tapering avoids abrupt changes in the waveguide, reducing signal loss and improving overall performance. The sensor structure may also include additional components, such as light sources or detectors, to facilitate signal processing and analysis. The design ensures robust and sensitive detection while maintaining manufacturability and scalability.
6. The sensor structure of claim 4 , wherein the photodetector is continuously tapered.
A continuously tapered photodetector is used in sensor structures to improve light detection efficiency and sensitivity. The photodetector has a gradually varying cross-sectional area along its length, eliminating abrupt transitions that can cause optical losses or reflections. This design enhances light absorption by ensuring a smooth transition of incident light into the active detection region. The tapered structure also reduces parasitic capacitance, improving signal-to-noise ratio and response time. The photodetector may be integrated into optical sensors, imaging devices, or communication systems where precise light detection is critical. The continuous taper allows for better coupling with optical fibers or waveguides, minimizing signal degradation. This innovation addresses challenges in conventional photodetectors, such as limited efficiency and high reflection losses, by optimizing the geometric profile for enhanced performance. The tapered design can be applied to various semiconductor materials, including silicon, germanium, or compound semiconductors, depending on the target wavelength range. The sensor structure may also include additional components like lenses or filters to further enhance detection accuracy. The continuous taper ensures uniform light distribution across the detection area, improving overall sensor reliability and accuracy. This advancement is particularly useful in high-speed optical communication, biomedical imaging, and environmental monitoring applications.
7. The sensor structure of claim 6 , wherein the continuously tapered photodetector is formed as a double tapered photodetector.
A sensor structure includes a continuously tapered photodetector designed to enhance light detection efficiency. The photodetector has a gradually narrowing shape to improve light absorption and reduce reflection losses. In an advanced configuration, the photodetector is formed as a double tapered structure, meaning it tapers in two distinct regions along its length. This dual-taper design further optimizes light capture by minimizing reflections at multiple interfaces and increasing the effective absorption path length. The sensor structure is particularly useful in optical detection systems where high sensitivity and low noise are critical, such as in imaging devices, communication systems, or environmental monitoring. The double-tapered photodetector addresses challenges in conventional photodetectors, such as limited light absorption and high reflection losses, by leveraging geometric optimization to enhance performance. The structure can be integrated into various semiconductor-based devices, including CMOS image sensors or photonic integrated circuits, to improve overall system efficiency.
8. The sensor structure of claim 7 , wherein the double tapered photodetector includes a taper at its input end portion.
This invention relates to an improved sensor structure incorporating a double tapered photodetector for enhanced optical signal detection. The technology addresses challenges in photodetection efficiency, particularly in applications requiring high sensitivity and low noise, such as optical communication systems, imaging devices, and environmental sensing. The sensor structure features a photodetector with a double-tapered design, meaning it has tapered regions at both the input and output ends. The taper at the input end portion optimizes light coupling, reducing reflection losses and improving signal capture. This design minimizes optical losses while maintaining high detection efficiency. The photodetector is integrated into a sensor structure that may include additional components like waveguides or optical fibers to direct light to the photodetector. The double-tapered configuration enhances performance by improving light absorption and reducing unwanted reflections, which can degrade signal quality. The taper at the input end specifically ensures efficient light entry, while the overall design allows for precise control of optical properties. This structure is particularly useful in applications where signal integrity and sensitivity are critical, such as in high-speed data transmission or low-light imaging. The invention provides a robust solution for improving photodetection efficiency in optical systems, addressing limitations of conventional photodetectors that suffer from high reflection losses and poor light coupling. The double-tapered design offers a practical and effective way to enhance performance in various optical sensing applications.
9. The sensor structure of claim 7 , wherein the continuously tapered waveguide structure is formed from silicon material or silicon on insulator material.
The invention relates to a sensor structure incorporating a continuously tapered waveguide for optical sensing applications. The problem addressed is the need for improved light coupling efficiency and sensitivity in optical sensors, particularly those used in biosensing, environmental monitoring, or integrated photonics. Traditional waveguides often suffer from poor light confinement or inefficient coupling, limiting sensor performance. The sensor structure includes a continuously tapered waveguide that gradually narrows along its length, enhancing light confinement and coupling efficiency. This tapered design allows for better interaction between the guided light and the surrounding medium, improving sensitivity. The waveguide is formed from silicon material or silicon-on-insulator (SOI) material, which provides high refractive index contrast for strong light confinement and compatibility with existing semiconductor fabrication processes. The continuous taper ensures smooth light propagation without abrupt transitions that could cause scattering or signal loss. The sensor structure may be integrated with additional components such as detectors, light sources, or microfluidic channels to form a complete sensing system. The use of silicon or SOI materials enables compact, high-performance optical sensors suitable for mass production. This design is particularly useful in applications requiring precise detection of analytes, environmental changes, or biological interactions.
10. The sensor structure of claim 1 , wherein at least a portion of the encapsulating material encapsulating lateral sides of the photodetector lands on the waveguide structure.
A sensor structure includes a photodetector with lateral sides encapsulated by an encapsulating material, where at least part of this material extends to land on an adjacent waveguide structure. The photodetector is designed to detect optical signals, and the waveguide structure guides light to or from the photodetector. The encapsulating material provides mechanical support and protection while ensuring proper alignment between the photodetector and waveguide. This configuration improves optical coupling efficiency by minimizing misalignment and reducing signal loss. The structure is particularly useful in integrated photonics, where precise alignment between optical components is critical for high-performance sensing applications. The encapsulating material may be a dielectric or polymer layer, and the photodetector could be a semiconductor device such as a photodiode. The waveguide structure may be a ridge or channel waveguide fabricated from materials like silicon or silicon nitride. This design addresses challenges in maintaining optical coupling integrity in compact, high-density photonic circuits.
11. The sensor structure of claim 1 , wherein the photodetector contacts the waveguide structure through a hole in the encapsulating material.
A sensor structure includes a photodetector and a waveguide structure, where the photodetector is positioned to detect light propagating through the waveguide. The waveguide structure is encapsulated by a material that prevents direct contact between the photodetector and the waveguide. To enable detection, the encapsulating material includes a hole that allows the photodetector to physically contact the waveguide. This configuration ensures that the photodetector can efficiently receive light from the waveguide while maintaining structural integrity and isolation from external interference. The sensor structure is designed for applications requiring precise optical detection, such as in integrated photonics or optical communication systems, where minimizing signal loss and maintaining alignment between components are critical. The hole in the encapsulating material ensures that the photodetector can be positioned in close proximity to the waveguide, reducing optical coupling losses and improving detection sensitivity. The encapsulating material may also provide mechanical support and environmental protection for the waveguide and photodetector, enhancing the overall reliability of the sensor structure.
12. The sensor structure of claim 10 , wherein the photodetector is continuously tapered and fully lands on a planar surface of the waveguide structure.
A sensor structure is disclosed for optical detection applications, addressing challenges in integrating photodetectors with waveguide structures. The invention involves a continuously tapered photodetector that is fully landed on a planar surface of a waveguide structure. The photodetector is designed to minimize optical losses and improve coupling efficiency between the waveguide and the photodetector. The waveguide structure provides a platform for guiding light, while the tapered photodetector ensures efficient light absorption. The continuous taper allows for gradual light coupling, reducing reflections and enhancing detection sensitivity. This design is particularly useful in integrated photonic circuits where precise alignment and efficient light detection are critical. The planar surface of the waveguide ensures stable mechanical and optical coupling, improving overall system performance. The invention may be applied in optical communication systems, sensing devices, and other photonic applications requiring high-efficiency light detection.
13. The sensor structure of claim 10 , wherein the continuously tapered photodetector is formed as a double tapered photodetector.
A sensor structure includes a continuously tapered photodetector designed to enhance light detection efficiency. The photodetector is structured with a double taper, meaning it has two distinct tapering regions along its length. The first taper gradually narrows the photodetector's width from a wider input end to a narrower intermediate section, while the second taper further narrows the photodetector from the intermediate section to an even narrower output end. This double-tapered design optimizes light absorption by increasing the interaction length between incident light and the photodetector's active region, improving sensitivity and reducing reflection losses. The sensor structure may be integrated into optical systems, such as imaging devices or communication systems, where precise light detection is critical. The double-tapered photodetector can be fabricated using semiconductor materials and standard microfabrication techniques, ensuring compatibility with existing manufacturing processes. The design addresses challenges in photodetector efficiency, particularly in applications requiring high sensitivity and low noise.
14. The sensor structure of claim 11 , wherein the double tapered photodetector includes a taper at its input end portion.
A sensor structure includes a double tapered photodetector with a taper at its input end portion. The photodetector is designed to enhance light detection efficiency by gradually narrowing the input end, which improves light coupling and reduces reflection losses. The structure may be integrated into optical systems where precise light detection is critical, such as in imaging, communication, or sensing applications. The taper at the input end helps focus incoming light into the photodetector, increasing the active detection area and improving signal-to-noise ratio. This design is particularly useful in high-speed or low-light environments where maximizing photon capture is essential. The photodetector may be fabricated using semiconductor materials and processes, ensuring compatibility with existing manufacturing techniques. The overall structure aims to optimize optical performance while maintaining compactness and reliability.
15. The sensor structure of claim 1 , wherein the encapsulating material is over divots or recesses in the STI structures.
The invention relates to semiconductor sensor structures, specifically addressing challenges in integrating sensors with shallow trench isolation (STI) structures. The problem involves ensuring reliable sensor operation while maintaining structural integrity in semiconductor devices. The sensor structure includes an encapsulating material that is positioned over divots or recesses formed in the STI structures. These divots or recesses help to improve sensor performance by reducing mechanical stress and enhancing electrical isolation. The encapsulating material provides protection and stability to the sensor components, ensuring accurate and consistent sensor readings. The STI structures with divots or recesses are designed to accommodate the encapsulating material, optimizing the sensor's functionality within the semiconductor device. This configuration ensures that the sensor operates effectively while maintaining the structural integrity of the surrounding semiconductor materials. The invention is particularly useful in applications requiring precise sensor measurements in integrated circuits.
16. The sensor structure of claim 15 , wherein the divots or recesses are at a junction between an insulator material and an active semiconductor layer.
This invention relates to sensor structures designed to improve detection accuracy in semiconductor-based sensing devices. The problem addressed is the degradation of sensor performance due to material interfaces, particularly at junctions between insulator materials and active semiconductor layers, which can introduce noise, signal distortion, or reduced sensitivity. The solution involves incorporating divots or recesses at these critical junctions to enhance sensor functionality. The sensor structure includes a substrate with an active semiconductor layer and an insulator material. The divots or recesses are strategically placed at the interface between these two materials to mitigate adverse effects such as charge trapping, leakage currents, or mechanical stress. These features can improve charge carrier mobility, reduce parasitic capacitance, and enhance the overall reliability of the sensor. The recesses may be formed through etching, deposition, or other semiconductor fabrication techniques, ensuring precise control over their dimensions and placement. The active semiconductor layer may include materials like silicon, gallium nitride, or other compound semiconductors, while the insulator could be silicon dioxide, silicon nitride, or other dielectric materials. The sensor structure is particularly useful in applications requiring high sensitivity, such as biosensors, chemical sensors, or radiation detectors, where interface quality directly impacts performance. The divots or recesses help maintain signal integrity and extend the operational lifespan of the device.
17. The sensor structure of claim 1 , wherein the encapsulating material is nitride or oxide.
A sensor structure includes a substrate with a sensor element and an encapsulating material surrounding the sensor element. The encapsulating material is composed of nitride or oxide, providing protection and stability to the sensor element. The sensor element is configured to detect physical or environmental changes, such as temperature, pressure, or chemical composition, and the encapsulating material ensures durability and reliability in harsh operating conditions. The nitride or oxide material offers high thermal and chemical resistance, preventing degradation of the sensor element over time. This design enhances the sensor's performance and longevity, making it suitable for applications in industrial, automotive, or medical environments where robustness is critical. The encapsulating material may also include additional layers or coatings to further improve protection or functionality. The sensor structure may be integrated into larger systems for real-time monitoring and data acquisition.
18. The sensor structure of claim 1 , wherein the encapsulating material is in direct contact with the waveguide structure and the photodetector.
The invention relates to an optical sensor structure designed to enhance signal detection in photonic systems. The primary challenge addressed is improving the efficiency and reliability of optical signal transmission and detection by optimizing the interface between the waveguide structure and the photodetector. Traditional systems often suffer from signal loss or interference due to mismatches in material properties or improper encapsulation, leading to reduced performance. The sensor structure includes a waveguide for guiding optical signals and a photodetector for converting the optical signals into electrical signals. A key feature is the use of an encapsulating material that directly contacts both the waveguide and the photodetector. This direct contact ensures minimal signal loss and interference, as the encapsulating material is selected to have compatible optical and mechanical properties with both components. The encapsulation also provides mechanical stability and protection against environmental factors, such as moisture or physical damage, which can degrade performance over time. The waveguide structure is designed to efficiently transmit optical signals to the photodetector, while the photodetector is optimized for high sensitivity and low noise. The direct contact between the encapsulating material and both components ensures seamless signal transmission and detection, reducing losses and improving overall system performance. This design is particularly useful in applications requiring high precision and reliability, such as telecommunications, medical diagnostics, and environmental sensing. The invention provides a robust and efficient solution for optical signal detection in integrated photonic systems.
19. The sensor structure of claim 1 , wherein the encapsulating material is a dielectric material.
The invention relates to sensor structures, particularly those used in electronic devices, addressing the need for improved encapsulation to protect sensitive components while maintaining functionality. The sensor structure includes a substrate with a sensor element and an encapsulating material surrounding the sensor element. The encapsulating material is a dielectric material, which provides electrical insulation and mechanical protection. The dielectric material prevents electrical interference and short circuits while allowing the sensor to operate effectively. The sensor element may be a pressure sensor, temperature sensor, or other type of sensor, and the dielectric encapsulating material ensures reliable performance in various environmental conditions. The substrate may be a semiconductor material, such as silicon, and the sensor element is integrated into or on the substrate. The dielectric material can be applied through deposition, coating, or molding processes to fully encapsulate the sensor element. This design enhances durability and longevity while maintaining the sensor's sensitivity and accuracy. The invention is particularly useful in applications where sensors are exposed to harsh environments, such as industrial, automotive, or medical devices.
20. The sensor structure of claim 1 , wherein the waveguide structure is tapered, the photodetector is a double tapered photodetector, the double tapered photodetector includes a first taper which is tapered in a same horizontal taper direction as the waveguide structure and a second taper which is tapered in the same horizontal taper direction as the first taper, and the first taper is tapered at a different angle than the second taper.
This invention relates to an optical sensor structure designed to improve light detection efficiency in integrated photonic systems. The structure addresses the challenge of efficiently coupling light from a waveguide to a photodetector, particularly when the waveguide is tapered to enhance mode matching. The sensor includes a waveguide structure that is tapered to optimize light propagation and a photodetector that is specifically designed as a double tapered photodetector. The double tapered photodetector features two distinct tapers: a first taper aligned in the same horizontal direction as the waveguide taper and a second taper also aligned in the same horizontal direction as the first taper. The first and second tapers have different tapering angles, allowing for precise control over light coupling and absorption within the photodetector. This configuration enhances the overall efficiency of light detection by minimizing reflection losses and improving mode matching between the waveguide and the photodetector. The tapered waveguide and the double tapered photodetector work together to ensure optimal light transfer, making the sensor structure particularly useful in high-performance optical communication and sensing applications.
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September 1, 2020
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