Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. An optical sensor, comprising: a substrate; a transistor, disposed over the substrate; a first electrode, disposed over the substrate and electrically connected to the transistor; a second electrode, disposed over the first electrode; a photodiode, disposed between the first electrode and the second electrode; and an anti-reflective layer, disposed over the second electrode, comprising a first U-shaped portion lining the second electrode.
Optical sensor technology. This invention addresses the need for improved optical sensing devices. The device comprises a substrate with a transistor positioned above it. A first electrode is also located over the substrate and is electrically connected to the transistor. A second electrode is situated above the first electrode. A photodiode is integrated between the first and second electrodes. An anti-reflective layer is applied over the second electrode, and this layer includes a specific feature: a first U-shaped portion that lines the perimeter of the second electrode. This U-shaped portion is designed to enhance the optical performance of the sensor, likely by reducing unwanted reflections and improving light coupling into the photodiode. The overall structure integrates transistor switching with photodetective capabilities and anti-reflective properties for efficient light detection.
2. The optical sensor of claim 1 , wherein the first U-shaped portion of the anti-reflective layer is conformal to a second U-shaped portion of the second electrode.
An optical sensor includes an anti-reflective layer with a first U-shaped portion that is conformal to a second U-shaped portion of a second electrode. The sensor is designed to reduce unwanted reflections within the optical system, improving signal accuracy. The anti-reflective layer is positioned to minimize interference from stray light, ensuring reliable detection of optical signals. The conformal design of the U-shaped portions ensures precise alignment between the anti-reflective layer and the second electrode, enhancing optical performance. This configuration is particularly useful in applications requiring high sensitivity and low noise, such as imaging systems, spectroscopy, and optical communication devices. The anti-reflective layer may be made from materials with optimized refractive indices to further reduce reflections. The second electrode, which may be part of a photodetector or other optical component, interacts with the anti-reflective layer to maintain optical integrity. The overall structure ensures efficient light capture and minimal signal distortion, making the sensor suitable for advanced optical applications.
3. The optical sensor of claim 2 , wherein the photodiode comprises a third U-shaped portion disposed between the second U-shaped portion of the second electrode and a fourth U-shaped portion of the first electrode.
This invention relates to an optical sensor with an improved photodiode structure designed to enhance light detection efficiency. The sensor addresses the challenge of optimizing light absorption and signal-to-noise ratio in photodiodes, particularly in applications requiring high sensitivity and precision. The photodiode includes multiple U-shaped electrode portions arranged in a nested configuration. A first electrode has a fourth U-shaped portion, while a second electrode has a second U-shaped portion. A third U-shaped portion of the photodiode is positioned between these two U-shaped portions, creating an overlapping or interleaved arrangement. This design increases the active area for light detection while maintaining electrical isolation between the electrodes. The nested U-shaped structure allows for more efficient charge collection and reduces crosstalk, improving the sensor's overall performance. The photodiode's layered and interleaved electrode configuration enhances light absorption by maximizing the interaction between incident light and the semiconductor material. The third U-shaped portion acts as an intermediate layer, ensuring uniform charge distribution and minimizing dark current, which is critical for low-noise operation. This design is particularly useful in imaging sensors, optical communication devices, and other applications where precise light detection is required. The invention provides a compact yet highly efficient photodiode structure that improves sensitivity and reliability in optical sensing systems.
4. The optical sensor of claim 1 , wherein the anti-reflective layer further comprises: a planar portion, extending along an extending direction of the substrate; and a convex portion, connecting the planar portion and the first U-shaped portion, wherein a thickness of the convex portion is greater than a thickness of the planar portion.
This invention relates to an optical sensor with an improved anti-reflective layer designed to enhance light detection efficiency. The sensor includes a substrate with a first U-shaped portion and an anti-reflective layer applied over it. The anti-reflective layer has a planar portion that extends along the substrate's length and a convex portion that connects the planar portion to the U-shaped portion. The convex portion is thicker than the planar portion, which helps reduce reflections and improve light transmission. The U-shaped portion of the substrate may contain a light-sensitive element, such as a photodiode, to detect incoming light. The anti-reflective layer's design ensures minimal reflection losses, particularly at the edges where light enters the sensor. This structure is useful in applications requiring high sensitivity, such as imaging devices, optical communication systems, and environmental sensing. The convex portion's increased thickness compensates for variations in light incidence angles, further optimizing performance. The overall design minimizes optical losses while maintaining structural integrity.
5. The optical sensor of claim 4 , wherein the convex portion has a configuration of a ring shape from a top view perspective.
This invention relates to optical sensors, specifically those with a convex portion designed to improve light detection or emission. The convex portion is shaped as a ring when viewed from above, allowing for enhanced optical performance. The ring-shaped convex portion may be integrated into a sensor structure to optimize light collection, reduce reflections, or improve directional sensitivity. The sensor could be used in applications such as imaging, proximity detection, or environmental monitoring, where precise light management is critical. The ring configuration may also facilitate uniform light distribution or minimize interference from stray light sources. The convex portion may be formed from transparent or semi-transparent materials, depending on the application. The overall design aims to enhance the sensor's efficiency, accuracy, or reliability in capturing or emitting light.
6. The optical sensor of claim 5 , wherein an outer diameter of the convex portion is greater than 3 microns.
This invention relates to an optical sensor with a convex portion having an outer diameter greater than 3 microns. The sensor is designed to improve detection accuracy and sensitivity in optical measurement systems, particularly in applications requiring precise light detection. The convex portion enhances light collection efficiency by increasing the surface area exposed to incoming light, reducing signal loss and improving signal-to-noise ratio. The sensor may be integrated into various optical devices, such as cameras, spectrometers, or medical imaging systems, where high-resolution detection is critical. The convex design allows for better alignment with light sources and minimizes optical aberrations, ensuring accurate measurements. The outer diameter constraint ensures optimal performance while maintaining structural integrity. The sensor may include additional features, such as anti-reflective coatings or protective layers, to further enhance functionality. This design addresses challenges in optical sensing, such as low light sensitivity and signal distortion, by optimizing the sensor's geometry for improved light capture and processing.
7. The optical sensor of claim 5 , wherein an inner diameter of the convex portion is greater than 1 micron and less than 3 microns.
This invention relates to an optical sensor designed for high-precision measurements, particularly in applications requiring sub-micron accuracy. The sensor includes a convex portion with a precisely controlled inner diameter, which is critical for optimizing light detection and minimizing signal distortion. The convex portion's inner diameter is engineered to be greater than 1 micron and less than 3 microns, ensuring optimal light collection efficiency while maintaining structural integrity. This design enhances sensitivity and resolution, making the sensor suitable for advanced imaging, spectroscopy, and other high-precision optical applications. The convex shape of the portion helps focus incoming light onto a detection element, improving signal-to-noise ratio and reducing aberrations. The specified diameter range balances light collection area with mechanical stability, preventing deformation or misalignment that could degrade performance. This innovation addresses challenges in optical sensing where precision and reliability are paramount, such as in biomedical imaging, semiconductor inspection, and scientific instrumentation. The sensor's design ensures consistent performance across varying environmental conditions, making it adaptable for both laboratory and industrial use.
8. The optical sensor of claim 4 , wherein the thickness of the convex portion is in a range of 250 to 450 nanometers.
The invention relates to an optical sensor designed to enhance light detection efficiency, particularly in applications requiring precise measurement of optical signals. The sensor includes a convex portion on a light-receiving surface, which improves light collection by reducing reflection and increasing the effective light-gathering area. The convex portion is specifically engineered to have a thickness between 250 and 450 nanometers, optimizing its optical properties for efficient light transmission and detection. This thickness range ensures that the convex portion maintains structural integrity while maximizing light interaction, leading to improved signal-to-noise ratios and sensitivity. The sensor may be integrated into various optical systems, such as imaging devices, spectrometers, or photodetectors, where accurate and efficient light detection is critical. The convex portion's design addresses challenges in conventional sensors, such as light loss due to reflection or scattering, by providing a structured surface that guides incident light more effectively toward the active detection area. The invention thus offers a solution for enhancing the performance of optical sensors in demanding applications.
9. The optical sensor of claim 4 , wherein the thickness of the planar portion is in a range of 200 to 350 nanometers.
This invention relates to an optical sensor designed for precise light detection, addressing challenges in sensitivity and signal-to-noise ratio in optical measurement systems. The sensor includes a planar portion with a thickness precisely controlled between 200 and 350 nanometers to optimize light absorption and detection efficiency. The planar portion is part of a larger sensor structure that may incorporate a substrate, a light-absorbing layer, and electrical contacts to facilitate signal transmission. The thickness range ensures optimal performance by balancing light absorption depth and structural integrity, enhancing the sensor's ability to detect low-intensity optical signals with high accuracy. The sensor is particularly useful in applications requiring high sensitivity, such as biomedical imaging, environmental monitoring, and industrial process control, where precise light detection is critical. The controlled thickness of the planar portion minimizes signal distortion and improves the sensor's overall reliability in varying operational conditions.
10. The optical sensor of claim 4 , wherein the thickness of the convex portion is in a range of 300 to 350 nanometers, and a thickness of the second electrode is in a range of 20 to 80 nanometers.
Optical sensors are used in various applications to detect and measure light, but their performance can be limited by factors such as sensitivity, response time, and durability. One challenge is optimizing the structural design of the sensor to enhance light detection efficiency while maintaining mechanical stability. A prior art optical sensor addresses this by incorporating a convex portion with a specific thickness range and a second electrode with a controlled thickness to improve performance. The optical sensor includes a convex portion that enhances light collection and focusing, with a thickness between 300 and 350 nanometers. This range ensures optimal light interaction while maintaining structural integrity. Additionally, a second electrode is integrated into the sensor, with a thickness between 20 and 80 nanometers. This electrode thickness range balances electrical conductivity and transparency, ensuring efficient charge collection without excessive light absorption. The combination of these structural features improves the sensor's sensitivity and reliability, making it suitable for applications requiring precise light detection, such as imaging, spectroscopy, or environmental monitoring. The design ensures that the sensor operates efficiently while minimizing signal loss and mechanical degradation.
11. The optical sensor of claim 1 , wherein the anti-reflective layer further comprises: a second convex portion, disposed at a bottom of the first U-shaped portion and protruding away from the photodiode.
An optical sensor includes an anti-reflective layer designed to reduce unwanted light reflections that degrade sensor performance. The anti-reflective layer has a first U-shaped portion that surrounds a photodiode, minimizing reflections from the sensor's active area. To further enhance anti-reflective properties, the layer includes a second convex portion located at the bottom of the U-shaped portion. This convex portion protrudes outward, away from the photodiode, creating a smooth, curved surface that scatters or diffuses incident light rather than reflecting it back toward the sensor. The combination of the U-shaped and convex structures ensures that light entering the sensor is either absorbed or redirected away from the photodiode, improving signal-to-noise ratio and overall sensitivity. This design is particularly useful in high-precision optical applications where minimizing stray light is critical, such as imaging sensors, LiDAR systems, or medical diagnostic devices. The convex portion's shape and positioning are optimized to work synergistically with the U-shaped structure, ensuring broad-spectrum anti-reflective performance across different wavelengths and incident angles.
12. The optical sensor of claim 1 , further comprising: a dielectric layer, disposed between the transistor and the first electrode, comprising a through hole.
An optical sensor includes a transistor, a first electrode, and a dielectric layer positioned between the transistor and the first electrode. The dielectric layer contains a through hole that allows light to pass through to the transistor, enabling the sensor to detect optical signals. The transistor functions as a photodetector, converting incident light into an electrical signal. The first electrode is positioned to receive the light and may be part of a light-guiding structure that directs the light toward the transistor. The dielectric layer electrically insulates the transistor from the first electrode while allowing optical transmission through the through hole. This configuration enhances the sensor's sensitivity and efficiency by ensuring direct light exposure to the transistor's active region. The sensor may be integrated into imaging arrays or other optoelectronic devices where precise light detection is required. The through hole in the dielectric layer ensures minimal light obstruction, improving signal quality and reducing noise. The overall design optimizes the interaction between optical and electronic components, making the sensor suitable for applications in high-resolution imaging, optical communication, and environmental sensing.
13. The optical sensor of claim 12 , wherein the first electrode lines the through hole thereby penetrating the dielectric layer to electrically connect to the transistor.
This invention relates to an optical sensor with an improved electrode configuration for enhanced electrical connectivity. The sensor includes a dielectric layer with a through hole and a transistor. A first electrode lines the through hole, penetrating the dielectric layer to establish direct electrical contact with the transistor. This design ensures reliable signal transmission while maintaining structural integrity. The sensor may also include a second electrode positioned on the dielectric layer, opposite the first electrode, to form a capacitive or photoconductive sensing structure. The transistor, which may be a thin-film transistor, provides switching or amplification functionality. The through-hole electrode configuration minimizes parasitic capacitance and improves signal integrity by reducing the distance between the electrode and the transistor. This design is particularly useful in high-density sensor arrays, such as those used in imaging or touch-sensitive applications, where compact and efficient electrical connections are critical. The invention addresses challenges in conventional sensors where poor electrical contact or excessive parasitic effects degrade performance. By integrating the electrode directly into the through hole, the sensor achieves better sensitivity and reliability while simplifying manufacturing processes.
14. The optical sensor of claim 12 , further comprising: a reflective layer, disposed between the dielectric layer and the first electrode, and lining the through hole.
An optical sensor detects light by converting optical signals into electrical signals. A common challenge in such sensors is optimizing light detection efficiency while maintaining structural integrity and electrical performance. This invention addresses these issues by incorporating a reflective layer within the sensor's through-hole structure. The sensor includes a substrate with a through hole, a dielectric layer lining the through hole, and a first electrode. The reflective layer is positioned between the dielectric layer and the first electrode, lining the through hole. This reflective layer enhances light detection by redirecting incident light toward the sensor's active regions, improving sensitivity and efficiency. The dielectric layer provides electrical insulation and structural support, while the first electrode facilitates signal collection. The reflective layer's placement ensures optimal light reflection without interfering with the sensor's electrical or mechanical properties. This design is particularly useful in applications requiring high-performance optical sensing, such as imaging devices, environmental monitoring, and biomedical diagnostics. The reflective layer's integration into the through-hole structure allows for compact, high-efficiency sensors with improved light capture capabilities.
15. The optical sensor of claim 14 , wherein a thickness of the reflective layer is in a range of 130 to 180 nanometers, and a thickness of the first electrode is in a range of 10 to 50 nanometers.
This invention relates to an optical sensor designed for enhanced light detection, particularly in applications requiring precise measurement of optical properties. The sensor addresses challenges in achieving high sensitivity and accuracy in optical measurements, which are critical for fields such as biomedical imaging, environmental monitoring, and industrial process control. The optical sensor includes a reflective layer and a first electrode, both of which are optimized for performance. The reflective layer has a thickness between 130 and 180 nanometers, ensuring efficient reflection of incident light while minimizing signal loss. The first electrode, with a thickness ranging from 10 to 50 nanometers, facilitates electrical conductivity while maintaining optical transparency. These thickness ranges are selected to balance optical and electrical properties, ensuring the sensor operates with high efficiency and reliability. The sensor may also include additional components, such as a substrate, a second electrode, and a sensing layer, which work together to detect and process optical signals. The substrate provides structural support, while the second electrode completes the electrical circuit. The sensing layer interacts with the target analyte or light source, generating a measurable response. The precise dimensions of the reflective layer and first electrode enhance the sensor's ability to detect weak signals and improve overall performance. This design ensures the optical sensor achieves high sensitivity, fast response times, and long-term stability, making it suitable for demanding applications where accurate optical measurements are essential.
16. The optical sensor of claim 1 , further comprising: a connecting line, disposed between the transistor and the first electrode, wherein a bottom of a U-shaped portion of the first electrode is disposed within a top surface of the connecting line.
An optical sensor includes a transistor, a first electrode, and a connecting line. The transistor has a gate, a source, and a drain. The first electrode is U-shaped and positioned above the transistor, with a bottom of the U-shaped portion of the first electrode disposed within a top surface of the connecting line. The connecting line electrically connects the transistor to the first electrode, ensuring proper signal transmission between the components. The sensor may also include a second electrode, a light-absorbing layer, and a passivation layer. The second electrode is positioned above the first electrode, and the light-absorbing layer is sandwiched between the first and second electrodes. The passivation layer covers the transistor and the connecting line, protecting the underlying structures. The sensor operates by absorbing light in the light-absorbing layer, generating a charge that is transferred through the first electrode, connecting line, and transistor to produce an electrical signal. This design improves signal integrity and reliability by ensuring a stable electrical connection between the transistor and the first electrode. The sensor is useful in imaging devices, optical detectors, and other applications requiring precise light detection.
17. The optical sensor of claim 1 , further comprising: a capacitor, disposed over the substrate, and electrically connected to the transistor.
An optical sensor includes a substrate with a transistor and a photodetector. The photodetector converts incident light into an electrical signal, which is processed by the transistor. The sensor further includes a capacitor disposed over the substrate and electrically connected to the transistor. The capacitor stores charge generated by the photodetector, enhancing signal stability and reducing noise. The transistor amplifies the stored charge, producing an output signal proportional to the incident light intensity. This configuration improves sensitivity and dynamic range, making the sensor suitable for low-light applications. The capacitor's placement over the substrate optimizes space efficiency while maintaining electrical connectivity to the transistor. The sensor may also include additional components, such as a light-blocking layer to prevent interference from stray light. The overall design ensures reliable optical detection with minimal power consumption.
18. The optical sensor of claim 17 , wherein the capacitor, the photodiode and the transistor are electrically connected through one connecting line.
An optical sensor system includes a photodiode for detecting light, a transistor for amplifying the detected signal, and a capacitor for storing charge. The photodiode converts incident light into an electrical signal, which is then amplified by the transistor. The capacitor stores the amplified signal for further processing. The photodiode, transistor, and capacitor are electrically connected through a single connecting line, simplifying the circuit design and reducing the number of interconnections. This configuration minimizes signal loss and noise, improving the sensor's sensitivity and reliability. The system is particularly useful in applications requiring compact, high-performance optical detection, such as imaging sensors, environmental monitoring, and biomedical devices. The single connecting line reduces manufacturing complexity and enhances scalability, making the sensor suitable for mass production. The design ensures efficient charge transfer and signal integrity, addressing challenges in traditional multi-line configurations where signal degradation and interference are common. The integrated approach optimizes performance while maintaining a small footprint, making it ideal for integration into advanced electronic systems.
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September 15, 2020
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