Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A semiconductor memory device comprising: a row decoder configured to decode a row address to generate a plurality of word line selection signals; a column decoder configured to decode a column address to generate a plurality of column selection signals; a memory cell array comprising a plurality of memory cells, one or more of the plurality memory cells being selected in response to the a plurality of word line selection signals and the a plurality of column selection signals; and an error correcting code (ECC) decoder configured to: receive first data and a first parity for the first data from the selected memory cells of the memory cell array, generate a second parity for the first data using an H-matrix and the first data, compare the first parity to the second parity to generate a first syndrome, and generate a decoding status flag (DSF) with different states on the basis of the number of “0” or “1” included in the first syndrome.
This technical summary describes a semiconductor memory device designed to enhance data reliability through error correction. The device includes a row decoder that decodes a row address to produce word line selection signals and a column decoder that decodes a column address to generate column selection signals. These signals select one or more memory cells within a memory cell array. The device also incorporates an error correcting code (ECC) decoder that processes data read from the selected memory cells. The ECC decoder receives first data and its associated first parity from the memory cells, then generates a second parity for the first data using an H-matrix. By comparing the first and second parities, the ECC decoder produces a first syndrome. The syndrome is analyzed to determine the number of "0" or "1" bits it contains, and this information is used to generate a decoding status flag (DSF) with different states. The DSF indicates the error correction status, allowing the system to assess data integrity and take appropriate actions. This approach improves memory reliability by detecting and correcting errors efficiently.
2. The semiconductor memory device of claim 1 , wherein codes of column vectors of the H-matrix are different codes from each other, and wherein each of the codes includes bits of “0” and “1” except for a code of including all “0” bits.
This invention relates to semiconductor memory devices, specifically those using error correction codes (ECC) based on parity-check matrices (H-matrices) for data integrity. The problem addressed is ensuring reliable error detection and correction in memory systems by optimizing the structure of the H-matrix, particularly its column vectors. The invention describes a semiconductor memory device where the column vectors of the H-matrix are encoded with unique binary codes. Each code consists of a combination of "0" and "1" bits, except for one code that contains all "0" bits. This design ensures that the parity-check matrix has distinct column vectors, improving error detection capabilities. The unique codes help distinguish between different error patterns, reducing the likelihood of undetected errors or miscorrections. The inclusion of an all-zero code in the matrix allows for efficient implementation while maintaining robustness against common error types. The device may be part of a larger memory system, such as a flash memory or DRAM, where ECC is critical for data reliability. The optimized H-matrix structure enhances the overall error correction performance, making the memory device more resilient to data corruption.
3. The semiconductor memory device of claim 2 , wherein a minimum hamming distance between the codes of the H-matrix is greater than or equal to three.
A semiconductor memory device includes a memory array and an error correction system. The memory array stores data in a plurality of memory cells, and the error correction system corrects errors in the stored data using a parity check matrix (H-matrix) derived from a low-density parity-check (LDPC) code. The H-matrix is constructed to ensure that the minimum Hamming distance between any two codewords is at least three, which improves error correction capability by reducing the likelihood of undetectable errors. The error correction system encodes data using the LDPC code before storage and decodes the data upon retrieval, applying iterative belief propagation to correct errors. The memory device may be a flash memory, DRAM, or other non-volatile memory, where the LDPC code enhances reliability in the presence of noise or defects. The H-matrix design ensures robust error detection and correction, particularly for multi-bit errors, by enforcing a minimum Hamming distance that prevents codewords from being too similar. This improves data integrity in memory systems operating under harsh conditions or with aging components.
4. The semiconductor memory device of claim 2 , wherein the ECC decoder is configured to: activate a non-error signal in response to the first syndrome having all bits of “0,” activate a correctable error signal in response to the first syndrome having a number of “1” bits less than or equal to a predetermined number, and activate an uncorrectable error signal in response to the first syndrome having a number of “1” bits greater than the predetermined number.
This invention relates to semiconductor memory devices with error correction capabilities, specifically focusing on error detection and correction using an error correction code (ECC) decoder. The problem addressed is the need for efficient and reliable error detection in memory systems, where errors can occur due to manufacturing defects, radiation, or wear over time. The invention improves upon prior art by providing a more precise and responsive error handling mechanism within the ECC decoder. The ECC decoder processes a syndrome generated from read data to determine the presence and correctability of errors. The decoder activates a non-error signal when the syndrome consists entirely of "0" bits, indicating no errors. If the syndrome contains a number of "1" bits within a predetermined threshold, the decoder activates a correctable error signal, allowing the system to apply error correction. If the syndrome exceeds this threshold, an uncorrectable error signal is activated, indicating that the error cannot be reliably corrected. This approach ensures that the memory device can distinguish between different error conditions, improving system reliability and performance. The predetermined number of "1" bits is set based on the ECC scheme's capabilities, ensuring optimal error handling.
5. The semiconductor memory device of claim 4 , wherein the ECC decoder comprises a parity generator configured to perform an exclusive OR (XOR) operation on each of codes of row vectors of the H-matrix and the first data and a modulo 2 operation thereon to generate the second parity.
A semiconductor memory device includes an error correction code (ECC) decoder with a parity generator that enhances data integrity by generating additional parity bits. The device operates in a domain where data stored in memory is susceptible to errors due to noise, interference, or manufacturing defects. The ECC decoder corrects these errors by encoding data using a parity check matrix (H-matrix) and generating parity bits to detect and correct errors during read operations. The parity generator performs an exclusive OR (XOR) operation on each code of the row vectors of the H-matrix and the first data, followed by a modulo 2 operation, to produce the second parity. This process ensures that the generated parity bits accurately reflect the data, allowing the ECC decoder to detect and correct errors efficiently. The H-matrix is a structured matrix used in linear block codes, such as Bose-Chaudhuri-Hocquenghem (BCH) or Reed-Solomon codes, to define the relationships between data bits and parity bits. The first data refers to the original data being encoded, while the second parity represents the additional parity bits generated to enhance error detection and correction capabilities. This approach improves reliability in semiconductor memory devices by ensuring that errors are detected and corrected with high accuracy, reducing data loss and improving system performance. The parity generation method is particularly useful in high-density memory systems where error rates are higher due to increased storage density and environmental factors.
6. The semiconductor memory device of claim 5 , wherein the ECC decoder further comprises: a syndrome generator configured to perform an XOR operation on the first parity and the second parity to generate the first syndrome; and an error detector configured to activate the non-error signal, the correctable error signal, or the uncorrectable error signal in response to the first syndrome.
This invention relates to semiconductor memory devices with enhanced error correction capabilities. The device includes an error correction code (ECC) decoder that processes first and second parity data to detect and correct errors in stored data. The ECC decoder comprises a syndrome generator and an error detector. The syndrome generator performs an exclusive OR (XOR) operation on the first and second parity data to produce a first syndrome value. The error detector then evaluates this syndrome to determine the error status of the data. Depending on the syndrome result, the error detector activates one of three signals: a non-error signal (indicating no errors), a correctable error signal (indicating an error that can be fixed), or an uncorrectable error signal (indicating an error that cannot be fixed). This mechanism improves reliability by accurately identifying and classifying errors, enabling appropriate corrective actions. The invention is particularly useful in memory systems where data integrity is critical, such as in high-density storage or mission-critical applications. The ECC decoder's design ensures efficient error detection and correction, reducing the risk of data loss or corruption.
7. The semiconductor memory device of claim 6 , wherein the ECC decoder further comprises: an error position detector configured to detect which of the codes of the column vectors of the H-matrix match the first syndrome to generate error position information in response to the activating of the correctable error signal; an error corrector configured to correct an error of a corresponding position of the first data on the basis of the error position information in response to the activating of the correctable error signal; and a DSF generator configured to generate the DSF with different states in response to either the activating of the non-error signal or the correctable error signal or the activating of the uncorrectable error signal.
This invention relates to semiconductor memory devices with enhanced error correction capabilities. The device includes an error correction code (ECC) decoder that processes data stored in memory using a parity check matrix (H-matrix) to detect and correct errors. The ECC decoder generates a syndrome by multiplying the stored data with the H-matrix and compares it to a reference syndrome to determine if an error exists. If no error is detected, a non-error signal is activated. If an error is detected, the decoder checks whether it is correctable or uncorrectable. For correctable errors, an error position detector identifies the specific column vectors in the H-matrix that match the syndrome, generating error position information. An error corrector then corrects the error in the corresponding position of the stored data. A data state flag (DSF) generator produces a DSF with different states based on whether the error is non-existent, correctable, or uncorrectable. This system improves memory reliability by dynamically adjusting error handling based on the type and severity of detected errors.
8. A semiconductor memory device comprising: a row decoder configured to decode a row address to generate a plurality of word line selection signals; a column decoder configured to decode a column address to generate a plurality of column selection signals; a memory cell array including a plurality of memory cells, one or more of the plurality of memory cells being selected in response to the plurality of word line selection signals and the plurality of column selection signals; and an error correcting code (ECC) decoder configured to: receive first data and a first parity for the first data output from the selected memory cells of the memory cell array, generate a second parity for the first data using a first H-matrix and the first data, compare the first parity to the second parity to generate a first syndrome, compare two adjacent bits of the first syndrome to generate a second syndrome, and generate a decoding status flag (DSF) with different states using the second syndrome and a second H-matrix, wherein first codes of column vectors of the first H-matrix are included in second codes of column vectors of the second H-matrix, which is generated by performing an exclusive OR (XOR) operation on the two adjacent bits of each of the first codes.
This technical summary describes a semiconductor memory device with integrated error correction capabilities. The device includes a row decoder to decode row addresses and generate word line selection signals, and a column decoder to decode column addresses and generate column selection signals. These signals select one or more memory cells within a memory cell array. The device also includes an error correcting code (ECC) decoder that processes data read from the selected memory cells. The ECC decoder receives first data and a first parity from the memory cells, then generates a second parity for the first data using a first parity-check matrix (H-matrix). The first parity is compared to the second parity to produce a first syndrome. The ECC decoder then compares adjacent bits of the first syndrome to generate a second syndrome. Using the second syndrome and a second H-matrix, the decoder produces a decoding status flag (DSF) with multiple states. The second H-matrix is derived by performing an exclusive OR (XOR) operation on adjacent bits of each column vector in the first H-matrix, ensuring that the column vectors of the first H-matrix are included within the column vectors of the second H-matrix. This approach enhances error detection and correction efficiency in semiconductor memory devices.
9. The semiconductor memory device of claim 8 , wherein the first codes are different codes from each other, and each of the first codes includes bits of “0” and “1” except for a code including all “0” bits.
This invention relates to semiconductor memory devices, specifically addressing the need for efficient error detection and correction in memory storage. The device includes a memory array and a control circuit configured to perform error detection and correction operations. The control circuit generates first codes for error detection and second codes for error correction, where the first codes are distinct from each other and each includes a mix of "0" and "1" bits, excluding a code composed entirely of "0" bits. The control circuit also generates third codes for error correction, which are distinct from the first and second codes. During a read operation, the control circuit detects errors using the first codes and corrects errors using the second and third codes. The device ensures reliable data storage by preventing the use of an all-zero code for error detection, which could lead to undetected errors. The control circuit may also perform a write operation by encoding data with the first, second, and third codes before storing it in the memory array. This approach enhances data integrity by ensuring that error detection and correction mechanisms are robust and distinct, reducing the likelihood of miscorrection or undetected errors.
10. The semiconductor memory device of claim 9 , wherein a minimum hamming distance between the first codes is greater than or equal to three.
The semiconductor memory device relates to error correction in memory systems, specifically addressing the challenge of maintaining data integrity in the presence of errors. The device includes a memory array and an error correction circuit configured to encode data using a first set of codes and a second set of codes. The first codes are used for error detection and correction, while the second codes are used for error detection only. The error correction circuit is designed to detect and correct errors in the data using the first codes, and to detect errors using the second codes. The device ensures that the minimum Hamming distance between the first codes is at least three, which enhances the error correction capability by allowing the detection and correction of multiple-bit errors. The second codes are used to verify the integrity of the data after correction, providing an additional layer of reliability. This approach improves the overall robustness of the memory system by combining error correction and detection mechanisms to handle various types of data corruption.
11. The semiconductor memory device of claim 9 , wherein the ECC decoder is configured to: activate a non-error signal in response to the second syndrome having all bits of “0,” activate a correctable error signal in response to the second syndrome being present in the second codes, and activate an uncorrectable error signal in response to the second syndrome not being present in the second codes.
A semiconductor memory device includes an error correction code (ECC) decoder that processes a second syndrome generated from a memory read operation. The ECC decoder evaluates the second syndrome to determine the presence and correctability of errors in the read data. If the second syndrome consists entirely of "0" bits, the decoder activates a non-error signal, indicating no errors were detected. If the second syndrome matches any of the predefined second codes, the decoder activates a correctable error signal, indicating that the detected error can be corrected. If the second syndrome does not match any of the second codes, the decoder activates an uncorrectable error signal, indicating that the error cannot be corrected. The second syndrome is derived from a first syndrome generated during an initial error detection phase, where the first syndrome is used to identify potential errors in the read data. The ECC decoder then processes the first syndrome to generate the second syndrome, which is used for further error classification. This approach enhances error detection and correction efficiency in semiconductor memory devices by distinguishing between correctable and uncorrectable errors based on syndrome analysis.
12. The semiconductor memory device of claim 11 , wherein the ECC decoder comprises a first parity generator configured to perform an XOR operation on each of codes of row vectors of the first H-matrix and the first data and a modulo 2 operation thereon to generate the second parity.
A semiconductor memory device includes an error correction code (ECC) decoder with a first parity generator. The device stores data in a memory array and uses an ECC scheme to detect and correct errors. The ECC decoder processes data using a first H-matrix, which is a parity-check matrix in the ECC scheme. The first parity generator performs an XOR operation on each code of row vectors from the first H-matrix and the first data, followed by a modulo 2 operation, to generate a second parity. This second parity is used for error detection or correction in the memory device. The ECC decoder may also include additional components, such as a second parity generator that processes data using a second H-matrix to generate a first parity. The memory device may further include a memory controller that manages data storage and retrieval, ensuring reliability through the ECC scheme. The overall system improves data integrity by detecting and correcting errors in stored data using the generated parity values.
13. The semiconductor memory device of claim 12 , wherein the ECC decoder further comprises: a syndrome generator configured to perform an XOR operation on the first parity and the second parity to generate the first syndrome; a comparator configured to perform an XOR operation on two adjacent bits of the first syndrome to generate the second syndrome; and an error detector configured to activate the non-error signal, the correctable error signal, and the uncorrectable error signal in response to the second syndrome.
A semiconductor memory device includes an error correction code (ECC) decoder designed to detect and correct errors in stored data. The ECC decoder processes first and second parity bits associated with the data to identify errors. A syndrome generator performs an XOR operation on the first and second parity bits to produce a first syndrome. A comparator then performs an XOR operation on adjacent bits of the first syndrome to generate a second syndrome. An error detector evaluates the second syndrome to determine the error status of the data. The error detector activates a non-error signal when no errors are detected, a correctable error signal when an error is present and can be corrected, and an uncorrectable error signal when the error cannot be corrected. This system enhances data integrity by efficiently classifying errors, allowing the memory device to take appropriate corrective actions. The ECC decoder's structure ensures reliable error detection and correction, improving the overall reliability of the semiconductor memory device.
14. The semiconductor memory device of claim 13 , wherein the ECC decoder further comprises: an error position detector configured to detect which of the first codes match the first syndrome to generate error position information in response to the activating of the correctable error signal; an error corrector configured to correct an error of a corresponding position of the first data on the basis of the error position information in response to the activating of the correctable error signal; and a DSF generator configured to generate the DSF with different states in response to either the activating of the non-error signal or the correctable error signal or the activating of the uncorrectable error signal.
This invention relates to semiconductor memory devices with enhanced error correction capabilities. The device includes an error correction code (ECC) decoder that processes data read from memory cells to detect and correct errors. The ECC decoder generates a syndrome by comparing first codes derived from the read data with reference codes. If the syndrome matches a first code, a correctable error is detected, and an error position detector identifies the specific bit position of the error. An error corrector then corrects the error in the corresponding position of the read data. If the syndrome does not match any first code, the ECC decoder determines whether the error is uncorrectable. The decoder also generates a data status flag (DSF) with different states based on whether no error is detected, a correctable error is detected, or an uncorrectable error is detected. This allows the memory device to efficiently handle errors while providing clear status feedback for further processing. The system ensures reliable data integrity by dynamically adjusting error correction and flagging mechanisms based on the type of error encountered.
15. A memory system comprising: a semiconductor memory device comprising: a row decoder configured to decode a row address to generate a plurality of word line selection signals; a column decoder configured to decode a column address to generate a plurality of column selection signals; a memory cell array including a plurality of memory cells, one or more of the plurality of memory cells being selected in response to the plurality of word line selection signals and the plurality of column selection signals; and a first error correcting code (ECC) decoder configured to: receive first data and a first parity for the first data from the selected memory cells of the memory cell array, generate a second parity for the first data using a first H-matrix and the first data, compare the first parity to the second parity to generate a first syndrome, generate a decoding status flag (DSF) with different states on the basis of a type of an error of the first data indicated by the first syndrome, and generate second data based on a result from an operation of the first ECC decoder; and a controller configured to control an operation of the semiconductor memory device, the controller comprising: a second ECC decoder configured to perform an ECC decoding operation selected from among a plurality of ECC decoding operations on the second data applied from the semiconductor memory device in response to the DSF applied from the semiconductor memory device.
This invention relates to a memory system with enhanced error correction capabilities. The system addresses the problem of data integrity in semiconductor memory devices by implementing a dual-stage error correction process to detect and correct errors more effectively than conventional single-stage ECC systems. The memory system includes a semiconductor memory device with a row decoder, a column decoder, and a memory cell array. The row decoder decodes a row address to generate word line selection signals, while the column decoder decodes a column address to generate column selection signals. These signals select one or more memory cells in the array. The system also includes a first ECC decoder that receives data and its associated parity from the selected memory cells. Using a first H-matrix, the first ECC decoder generates a second parity for the data and compares it to the received parity to produce a syndrome. Based on the syndrome, the first ECC decoder determines the type of error and sets a decoding status flag (DSF) accordingly. It then generates corrected data. A controller manages the semiconductor memory device and includes a second ECC decoder. The second ECC decoder performs a selected ECC decoding operation on the corrected data from the semiconductor memory device, where the selection is based on the DSF provided by the first ECC decoder. This dual-stage approach allows for more flexible and efficient error correction, improving data reliability in memory operations.
16. The memory system of claim 15 , wherein first codes of column vectors of the first H-matrix are different codes from each other, and wherein each of the first codes includes bits of “0” and “1” except for a code including all “0” bits, a minimum hamming distance between the first codes being greater than or equal to three.
This invention relates to memory systems utilizing error correction codes, specifically focusing on improving reliability through structured code design. The system addresses the problem of data corruption in memory storage by employing a first H-matrix (parity-check matrix) with column vectors that have distinct first codes. These codes consist of binary bits ("0" and "1"), excluding the all-zero code, and maintain a minimum Hamming distance of at least three between any two codes. This ensures robust error detection and correction capabilities. The first H-matrix is part of a larger error correction scheme that may include additional matrices or codes to further enhance data integrity. The structured design of the codes minimizes the likelihood of undetectable errors while optimizing the system's ability to correct errors during read operations. The invention is particularly useful in high-reliability memory applications where data integrity is critical, such as in solid-state drives, enterprise storage, or other systems requiring fault tolerance. The use of distinct codes with a guaranteed Hamming distance improves the system's resilience against bit flips and other storage-related errors.
17. The memory system of claim 16 , wherein the first ECC decoder further comprises: a parity generator configured to generate the second parity for the first data; a syndrome generator configured to perform an XOR operation on the first parity and the second parity to generate the first syndrome; and an error detector configured to: activate a non-error signal in response to the first syndrome having all bits of “0,” activate a correctable error signal in response to the first syndrome having a number of “1” bits less than or equal to a predetermined number, and activate an uncorrectable error signal in response to the first syndrome having a number of “1” bits greater than the predetermined number.
This invention relates to memory systems with enhanced error correction capabilities. The system addresses the challenge of detecting and correcting errors in stored data, particularly in scenarios where traditional error correction codes (ECC) may fail to identify or fix certain types of errors. The memory system includes a first ECC decoder that processes data read from memory cells. The decoder generates a second parity for the first data and compares it with a first parity stored with the data. A syndrome generator performs an XOR operation between the first and second parities to produce a syndrome. An error detector then evaluates the syndrome to determine the error status. If the syndrome contains all zeros, the detector indicates no error. If the syndrome has a number of "1" bits within a predetermined threshold, the detector signals a correctable error. If the syndrome exceeds the threshold, the detector signals an uncorrectable error. This approach improves error detection accuracy and reliability in memory systems by distinguishing between correctable and uncorrectable errors based on syndrome analysis. The system ensures data integrity by providing clear error status feedback, enabling appropriate corrective actions.
18. The memory system of claim 17 , wherein the first ECC decoder further comprises: an error position detector configured to detect which of the first codes match the first syndrome to generate error position information in response to the activating of the correctable error signal; an error corrector configured to correct an error of a corresponding position of the first data on the basis of the error position information in response to the activating of the correctable error signal; and a DSF generator configured to generate the DSF with different states in response to either the activating of the non-error signal or the correctable error signal or the activating of the uncorrectable error signal.
This invention relates to memory systems with error correction capabilities, specifically addressing the need for efficient error detection and correction in data storage. The system includes a memory controller and a memory device, where the memory controller generates a data stream flag (DSF) to indicate the error status of data read from the memory device. The DSF is generated based on error detection results from an error correction code (ECC) decoder, which processes data using a first code and a second code. The first ECC decoder detects errors in the first data using the first code and generates a syndrome. If the syndrome matches a known error pattern, the decoder determines whether the error is correctable or uncorrectable. For correctable errors, an error position detector identifies the error location, and an error corrector corrects the data. For uncorrectable errors, the system signals the error condition. The DSF generator updates the DSF state based on the error status, ensuring downstream components receive accurate error information. This system improves reliability by dynamically adjusting error handling based on the severity of detected errors.
19. The memory system of claim 15 , wherein the first ECC decoder is configured to compare two adjacent bits of the first syndrome to generate a second syndrome, wherein first codes of column vectors of the first H-matrix are different codes from each other, each of the first codes includes bits of “0” and “1” except for a code including all “0” bits, and is included in second codes of column vectors of a second H-matrix generated by performing an XOR operation on two adjacent bits of each of the first codes, a minimum hamming distance between the first codes being greater than or equal to three.
This technical summary describes a memory system with an error correction code (ECC) decoder designed to improve error detection and correction in memory storage. The system addresses the challenge of maintaining data integrity in memory devices by using a structured parity-check matrix (H-matrix) to encode and decode data. The first ECC decoder compares adjacent bits of a first syndrome to generate a second syndrome, enhancing error detection accuracy. The column vectors of the first H-matrix are designed with unique codes, where each code consists of a mix of "0" and "1" bits, except for one code that is entirely "0" bits. These codes are also included in a second H-matrix, which is derived by performing an XOR operation on adjacent bits of each code in the first H-matrix. The design ensures a minimum Hamming distance of at least three between the codes, improving error correction reliability. This approach allows the system to detect and correct errors more effectively, particularly in high-density memory storage where bit errors are more likely. The structured H-matrix and syndrome comparison mechanism enhance the system's ability to identify and resolve errors, ensuring data integrity in memory operations.
20. The memory system of claim 19 , wherein the first ECC decoder comprises: a parity generator configured to generate the second parity for the first data; a syndrome generator configured to perform an XOR operation on the first parity and the second parity to generate a first syndrome; a comparator configured to perform an XOR operation on two adjacent bits of the first syndrome to generate a second syndrome; an error detector configured to: activate a non-error signal in response to the second syndrome having all bits of “0,” activate a correctable error signal in response to the second syndrome being present in the second codes, and activate an uncorrectable error signal in response to the second syndrome not being present in the second codes; an error position detector configured to detect which of the first codes match the first syndrome to generate error position information in response to the activating of the correctable error signal; an error corrector configured to correct an error of a corresponding position of the first data on the basis of the error position information in response to the activating of the correctable error signal; and a DSF generator configured to generate the DSF with different states in response to either the activating of the non-error signal or the correctable error signal or the activating of the uncorrectable error signal.
This invention relates to memory systems with enhanced error correction capabilities. The system addresses the challenge of detecting and correcting errors in stored data while efficiently managing error states. The memory system includes an error correction code (ECC) decoder that processes data and parity information to identify and correct errors. The decoder generates a second parity for the first data and compares it with the first parity using an XOR operation to produce a first syndrome. A comparator further processes the syndrome to generate a second syndrome by performing XOR operations on adjacent bits. An error detector evaluates the second syndrome to determine if no error exists (all bits zero), if a correctable error is present (syndrome matches predefined codes), or if an uncorrectable error exists (syndrome does not match predefined codes). If a correctable error is detected, an error position detector identifies the specific error location by matching the first syndrome with predefined codes, and an error corrector fixes the error in the corresponding data position. The system also generates a data state flag (DSF) with different states based on the error detection outcome, providing feedback on the error status. This approach improves error handling efficiency in memory systems by dynamically adjusting to different error conditions.
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October 13, 2020
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