Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A method of manufacturing a semiconductor device, the method comprising: providing a layout comprising a first group and a second group, the first group including a first pattern and a second pattern, the second group including a third pattern and a fourth pattern; examining a bridge risk region in the layout; biasing one end of at least one of the first and third patterns; and forming first to fourth conductive patterns by using the first to fourth patterns of the layout, respectively, wherein the one end of at least one of the first and third patterns is adjacent to the bridge risk region.
This invention relates to semiconductor manufacturing, specifically addressing the issue of bridge defects during the formation of conductive patterns. Bridge defects occur when adjacent conductive features unintentionally connect due to process variations, reducing device yield and reliability. The method improves layout design to mitigate this risk. The process begins with a layout containing two groups of patterns. The first group includes a first and second pattern, while the second group includes a third and fourth pattern. The layout is analyzed to identify bridge risk regions—areas where adjacent patterns are susceptible to unintended bridging. To reduce this risk, one end of at least one pattern in the first or third groups is biased (adjusted in position or shape) near the bridge risk region. This adjustment ensures proper spacing while maintaining design integrity. The modified layout is then used to form conductive patterns in the semiconductor device, with the biased pattern(s) preventing bridging defects. The method ensures reliable manufacturing by proactively addressing bridge risks during layout design, improving yield and performance in semiconductor devices.
2. The method of claim 1 , wherein the first to fourth patterns extend in parallel to each other in a first direction, and the one end of at least one of the first and third patterns is adjacent to the bridge risk region in a second direction crossing the first direction.
This invention relates to a method for forming conductive patterns in an integrated circuit to mitigate bridge risks between adjacent conductive features. The problem addressed is the potential for electrical shorts (bridges) between closely spaced conductive patterns, which can degrade device performance or cause failure. The method involves arranging first, second, third, and fourth conductive patterns in a specific geometric configuration to reduce bridge risks. The first, third, and fourth patterns extend parallel to each other in a first direction, while the second pattern intersects them in a second direction perpendicular to the first. At least one of the first or third patterns has an end positioned adjacent to a bridge risk region, which is an area where conductive features are particularly susceptible to shorting. The arrangement ensures that the conductive patterns are spaced and aligned in a way that minimizes the likelihood of unintended electrical connections. The method may also include forming additional conductive features or insulating layers to further isolate the patterns and prevent bridging. This approach is particularly useful in high-density integrated circuits where conductive features are closely packed, such as in memory devices or advanced logic circuits.
3. The method of claim 1 , wherein examining the bridge risk region comprises: defining a first bulging region on one side of the second pattern, based on one end of the first pattern; defining a second bulging region on one side of the fourth pattern, based on one end of the third pattern; and defining the bridge risk region that indicates an area where the first bulging region and the second bulging region overlap.
The invention relates to semiconductor manufacturing, specifically to methods for identifying potential bridging defects between adjacent conductive patterns on a substrate. During semiconductor fabrication, conductive patterns such as metal lines or vias are formed on a substrate, and unintended electrical connections (bridges) can occur between adjacent patterns due to manufacturing variations. These bridges can degrade device performance or cause failures. The invention provides a method to detect regions where such bridging is likely to occur by analyzing the spatial relationship between adjacent conductive patterns. The method involves examining a bridge risk region by defining two bulging regions around adjacent conductive patterns. A first bulging region is defined on one side of a second conductive pattern, based on the position of one end of a first conductive pattern. Similarly, a second bulging region is defined on one side of a fourth conductive pattern, based on the position of one end of a third conductive pattern. The bridge risk region is then determined as the overlapping area between the first and second bulging regions. This overlapping area represents a high-risk zone where bridging defects are more likely to occur due to misalignment or dimensional variations during manufacturing. By identifying these risk regions, corrective measures can be taken to improve pattern design or adjust fabrication processes to reduce defect rates.
4. The method of claim 3 , wherein, after biasing, the first bulging region and the second bulging region are spaced apart from each other.
This invention relates to a method for forming a semiconductor device with spaced-apart bulging regions. The method addresses the challenge of creating precise, isolated bulging regions in a semiconductor structure, which is critical for optimizing device performance and reliability. The process involves biasing a semiconductor material to induce controlled deformation, resulting in the formation of two distinct bulging regions. After biasing, these regions are intentionally spaced apart to prevent unwanted interactions that could degrade device functionality. The method ensures that the bulging regions remain separate, which is essential for maintaining electrical isolation and structural integrity in advanced semiconductor applications. This technique is particularly useful in manufacturing high-performance transistors, memory cells, or other microelectronic components where precise structural control is required. The spacing between the bulging regions is achieved through careful adjustment of biasing parameters, such as voltage, current, or thermal conditions, to achieve the desired separation without compromising material properties. The invention improves manufacturing consistency and device yield by ensuring that the bulging regions do not merge or interfere with each other during or after the biasing process.
5. The method of claim 3 , wherein a first extension is formed on one side of the second conductive pattern, the first extension corresponding to the first bulging region, and a second extension is formed on one side of the fourth conductive pattern, the second extension corresponding to the second bulging region.
This invention relates to conductive patterns with extensions for electrical or electronic devices, particularly in applications requiring precise alignment or connectivity. The problem addressed involves ensuring reliable electrical connections between conductive patterns, especially in structures where misalignment or deformation could disrupt functionality. The invention describes a method for forming conductive patterns with extensions that correspond to bulging regions. A first conductive pattern is formed with a first extension on one side, aligned with a first bulging region. Similarly, a second conductive pattern is formed with a second extension on one side, aligned with a second bulging region. These extensions compensate for variations in the bulging regions, ensuring proper electrical contact and structural integrity. The conductive patterns may be part of a larger system, such as a semiconductor device, flexible circuit, or other electronic assembly where precise alignment is critical. The extensions are designed to match the shape and position of the bulging regions, preventing gaps or overlaps that could lead to electrical failures. The method ensures that the conductive patterns remain functional even if the bulging regions vary slightly in size or position. This approach is particularly useful in manufacturing processes where tolerances must be tightly controlled to maintain performance. The invention improves reliability and reduces defects in devices where conductive patterns must interface with irregular or deformable surfaces.
6. The method of claim 1 , wherein biasing comprises placing an extension pattern on the one end of at least one of the first and third patterns.
This invention relates to semiconductor manufacturing, specifically to methods for improving the performance of integrated circuits by adjusting the electrical characteristics of transistor structures. The problem addressed is the need to fine-tune the electrical behavior of transistors, particularly in advanced nodes where precise control over device parameters is critical for optimal performance. The method involves modifying the layout of transistor structures by introducing an extension pattern at one end of at least one of the transistor patterns. This extension pattern alters the electrical properties of the transistor, such as threshold voltage or drive current, by influencing the doping profile or gate edge effects. The extension pattern can be applied to either the source or drain regions of the transistor, depending on the desired electrical adjustment. The technique is particularly useful in finFET or gate-all-around transistor architectures, where precise control over channel length and gate overlap is essential for minimizing leakage and improving switching speed. The extension pattern may be a geometric modification, such as an elongated or tapered region, that interacts with the surrounding material layers during fabrication. This interaction can enhance or suppress certain electrical effects, such as parasitic capacitance or resistance, to achieve the desired transistor behavior. The method can be integrated into existing semiconductor manufacturing processes without requiring significant changes to the overall fabrication flow, making it compatible with high-volume production. The result is a more precise and controllable transistor structure that meets the performance requirements of advanced integrated circuits.
7. The method of claim 1 , wherein biasing comprises removing a portion of at least one of the first and third patterns.
This invention relates to semiconductor manufacturing, specifically to a method for adjusting the electrical characteristics of a semiconductor device by modifying conductive patterns. The problem addressed is the need to fine-tune device performance by selectively altering conductive features to achieve desired electrical properties, such as resistance or capacitance, without requiring complete redesign of the device. The method involves a semiconductor structure with at least three conductive patterns, where the first and third patterns are electrically connected. The adjustment process, called biasing, includes removing a portion of at least one of these patterns. This removal can be done through etching, laser trimming, or other material removal techniques. By selectively removing parts of the conductive patterns, the electrical properties of the device can be modified to meet specific performance requirements. The removal process may be controlled to ensure precise adjustments, maintaining the structural integrity of the remaining patterns while achieving the desired electrical changes. This technique allows for post-fabrication tuning of semiconductor devices, improving yield and performance without requiring additional manufacturing steps. The method is particularly useful in applications where precise electrical characteristics are critical, such as in high-precision analog circuits or memory devices.
8. The method of claim 1 , wherein, after biasing, further comprising performing a design rule check on the layout.
A method for integrated circuit design involves generating a layout for an integrated circuit, where the layout includes a plurality of cells. The method includes biasing the layout by adjusting the spacing between the cells to meet design constraints, such as ensuring proper electrical isolation or optimizing performance. After biasing, the method performs a design rule check (DRC) on the modified layout to verify compliance with manufacturing and functional requirements. The DRC process identifies any violations of predefined design rules, such as minimum spacing, width, or other geometric constraints, ensuring the layout is manufacturable and functional. The method may also include additional steps, such as optimizing the layout for power, performance, or area, and generating a final layout that meets all specified criteria. The design rule check step ensures that the biased layout adheres to foundry-specific or industry-standard design rules, preventing potential manufacturing defects or performance issues. This method is particularly useful in advanced semiconductor manufacturing processes where precise layout adjustments are critical for yield and reliability.
9. The method of claim 1 , wherein neighboring ones of the first to fourth patterns are arranged at substantially the same pitch.
This invention relates to a method for arranging patterns in a semiconductor device to improve uniformity and performance. The method involves forming a plurality of patterns, including at least first, second, third, and fourth patterns, on a substrate. These patterns are arranged such that neighboring ones of the first to fourth patterns are positioned at substantially the same pitch. The arrangement ensures consistent spacing between adjacent patterns, which helps minimize variations in electrical and mechanical properties across the device. This uniformity is critical for high-performance semiconductor manufacturing, particularly in advanced nodes where small variations can significantly impact device reliability and yield. The method may be applied to various semiconductor structures, including transistors, memory cells, and interconnect layers, to enhance manufacturing consistency and reduce defects. By maintaining a uniform pitch between neighboring patterns, the method addresses challenges associated with pattern density variations, such as stress-induced distortions and lithography inconsistencies, leading to improved device performance and scalability.
10. The method of claim 1 , wherein the fourth pattern is disposed between the first and second patterns, and the second pattern is disposed between the third and fourth patterns.
This invention relates to a method for arranging patterns in a specific sequence to optimize a technical process, likely in fields such as semiconductor manufacturing, materials science, or microfabrication. The problem addressed involves the precise spatial arrangement of multiple patterns to achieve desired functional or structural properties, such as improved performance, reduced interference, or enhanced manufacturability. The method involves arranging four distinct patterns in a specific order. The first and second patterns are positioned adjacent to each other, with the fourth pattern placed between them. Additionally, the second pattern is positioned between the third and fourth patterns, creating an interleaved arrangement. This configuration ensures that the patterns interact in a controlled manner, preventing unwanted interactions while maintaining desired functional relationships. The arrangement may be used to optimize electrical conductivity, thermal management, mechanical stability, or other properties in a layered or multi-component system. The method is particularly useful in applications requiring precise alignment and spacing of microstructures or nanoscale features.
11. The method of claim 1 , wherein forming the first to fourth conductive patterns comprises: using the first group of the layout to fabricate a first photomask; using the second group of the layout to fabricate a second photomask; using the first photomask to perform a first photolithography process on a substrate; and using the second photomask to perform a second photolithography process on the substrate.
This invention relates to semiconductor manufacturing, specifically a method for fabricating conductive patterns on a substrate using multiple photolithography processes. The problem addressed is the efficient and precise formation of multiple conductive patterns in integrated circuits, which often requires multiple photolithography steps to achieve fine features and complex layouts. The method involves dividing a layout design into at least two groups, where each group corresponds to a subset of conductive patterns to be formed. The first group of the layout is used to fabricate a first photomask, and the second group is used to fabricate a second photomask. The first photomask is then used to perform a first photolithography process on a substrate, which defines the first set of conductive patterns. Subsequently, the second photomask is used to perform a second photolithography process on the same substrate, defining the second set of conductive patterns. This approach allows for the sequential formation of multiple conductive patterns with high precision, leveraging multiple photolithography steps to achieve the desired circuit layout. The method ensures accurate alignment and patterning of conductive features, which is critical for modern semiconductor devices where fine feature sizes and complex interconnect structures are required. By separating the layout into distinct groups and using separate photomasks for each group, the process improves manufacturing flexibility and reduces potential errors in pattern formation.
12. A method of manufacturing a semiconductor device, the method comprising: providing a layout; performing a line-end biasing on the layout; and using the layout to form conductive patterns on a substrate, wherein performing the line-end biasing comprises: examining a bridge risk region in the layout; biasing one end of at least one of patterns in the layout, the one end being adjacent to the bridge risk region; and performing a design rule check.
This invention relates to semiconductor manufacturing, specifically addressing the challenge of preventing unintended electrical bridges between conductive patterns during fabrication. The method involves modifying a semiconductor layout to reduce bridge risks while ensuring compliance with design rules. The process begins with providing a layout containing conductive pattern designs. Line-end biasing is then applied to adjust the layout, focusing on regions identified as having a high risk of bridging. The biasing step specifically modifies the ends of patterns adjacent to these risk regions to minimize the likelihood of short circuits. After biasing, a design rule check is performed to verify that the modified layout meets all fabrication constraints. The final layout is then used to form conductive patterns on a substrate, ensuring reliable semiconductor device production. This approach improves yield by proactively addressing potential bridging issues during the design phase, rather than relying solely on post-fabrication inspection. The method integrates risk assessment, geometric adjustment, and rule verification to enhance manufacturing reliability.
13. The method of claim 12 , wherein the line-end biasing is repeatedly performed.
A method for semiconductor manufacturing involves adjusting line-end biasing in a photolithography process to improve pattern fidelity. The process addresses the challenge of maintaining precise feature dimensions, particularly at the ends of lines, where distortions often occur due to optical proximity effects and resist behavior. The method includes analyzing a target pattern to identify critical line-end regions, applying a bias adjustment to these regions to compensate for expected distortions, and iteratively refining the bias based on feedback from test exposures. The repeated performance of line-end biasing ensures that the adjustments are optimized for the specific lithography system and resist chemistry being used. This iterative approach allows for fine-tuning of the bias values to achieve consistent and accurate pattern transfer, reducing defects and improving yield in semiconductor fabrication. The method may be integrated into a lithography simulation tool or an automated exposure system to streamline the process and enhance manufacturing efficiency.
14. The method of claim 12 , wherein a first pattern of the biased patterns violates a design rule, wherein performing the line-end biasing further comprises cancelling the biasing performed on the first pattern.
This invention relates to semiconductor manufacturing, specifically to techniques for adjusting layout patterns to improve manufacturability while ensuring compliance with design rules. The problem addressed is the need to correct layout patterns that violate design rules after applying biasing adjustments, which are modifications made to compensate for distortions during lithography and etching processes. The invention describes a method where a first pattern among multiple biased patterns is identified as violating a design rule. In response, the biasing applied to this pattern is canceled, effectively reverting it to its original state before any adjustments were made. This ensures that the final layout remains compliant with manufacturing constraints while still benefiting from biasing corrections for other patterns. The method involves detecting rule violations after biasing and selectively undoing adjustments only where necessary, allowing for precise control over pattern modifications. This approach helps maintain yield and reliability in semiconductor fabrication by preventing defective features while preserving the intended design intent.
15. The method of claim 12 , wherein performing the line-end biasing comprises placing an extension pattern on the one end of at least one of patterns.
This invention relates to semiconductor manufacturing, specifically to techniques for improving pattern fidelity in lithography processes. The problem addressed is the distortion or inaccuracies that occur at the ends of elongated patterns during lithography, which can lead to defects or performance issues in integrated circuits. The solution involves a method of line-end biasing, which adjusts the shape of pattern ends to compensate for these distortions. The method includes placing an extension pattern on one end of at least one of the patterns. This extension modifies the original pattern to ensure that after lithography and etching, the final structure has the desired dimensions and shape. The extension pattern is designed to counteract the natural distortions that occur during the lithographic process, such as rounding or tapering of the pattern ends. By strategically adding material or modifying the geometry at the line ends, the method ensures that the final etched pattern meets the required specifications. This technique is particularly useful in advanced semiconductor nodes where feature sizes are extremely small, and even minor distortions can significantly impact device performance. The method can be applied to various types of patterns, including metal interconnects, transistors, or other critical features in integrated circuits. The extension pattern may be generated using computational lithography tools or design rules to optimize its shape and size for the specific lithography process being used. The goal is to achieve high precision in pattern transfer, reducing the need for costly rework or yield loss due to defective structures.
16. The method of claim 12 , wherein the patterns in the layout extend in parallel to each other in a first direction, and the one end of at least one of patterns is adjacent to the bridge risk region in a second direction crossing the first direction.
This invention relates to semiconductor layout design, specifically addressing the challenge of preventing bridge defects in integrated circuits. Bridge defects occur when conductive patterns in a layout are too close, leading to unintended electrical connections. The invention provides a method to identify and mitigate bridge risk regions in a layout by analyzing the spatial arrangement of conductive patterns. The method involves examining a semiconductor layout where conductive patterns are arranged in parallel along a first direction. The system identifies bridge risk regions where patterns are positioned too close to each other, increasing the likelihood of bridging defects. To prevent these defects, the method ensures that at least one end of a conductive pattern is adjacent to a bridge risk region in a second direction that crosses the first direction. This spatial relationship helps maintain sufficient separation between patterns, reducing the risk of bridging. The method may also include additional steps such as adjusting the layout to increase spacing between patterns or modifying pattern shapes to avoid high-risk configurations. By systematically analyzing and modifying the layout, the invention improves manufacturing yield and reliability in semiconductor fabrication. The approach is particularly useful in advanced node designs where feature sizes are extremely small, making bridge defects more likely.
17. A method of manufacturing a semiconductor device, the method comprising: providing a layout including a first pattern, a second pattern, a third pattern and a fourth pattern that are sequentially arranged in a first direction, the first and third patterns constituting a first group, the second and fourth patterns constituting a second group, the first pattern having a first end, the fourth pattern having a second end; generating a first bulging region on one side of the third pattern aligned with the first end in the first direction; generating a second bulging region on one side of the second pattern aligned with the second end in the first direction; defining a bridge risk region on an area where the first bulging region and the second bulging region overlap; biasing at least one of the first and second ends of the first and fourth patterns, the at least one end of the first and second ends of the first and fourth patterns being adjacent to the bridge risk region; and forming first to fourth conductive patterns by using the first to fourth patterns of the layout, respectively.
The invention relates to semiconductor device manufacturing, specifically addressing the issue of bridge formation between conductive patterns during fabrication. In semiconductor layouts, adjacent conductive patterns may unintentionally connect due to process variations, leading to electrical shorts. The method involves a layout with four sequentially arranged patterns in a first direction, grouped into two pairs (first and third patterns in one group, second and fourth in another). The first and fourth patterns have ends that may align in a way that creates a risk of bridging. To mitigate this, the method generates bulging regions on the sides of the third and second patterns, aligned with the ends of the first and fourth patterns, respectively. The overlapping area of these bulging regions defines a bridge risk region. The method then adjusts the position of at least one of the ends of the first and fourth patterns to reduce the risk of bridging. Finally, the original patterns are used to form conductive structures in the semiconductor device. This approach ensures reliable pattern separation while maintaining layout integrity.
18. The method of claim 17 , wherein the bridge risk region indicates a zone where an electrical short occurs between the second conductive pattern and the third conductive pattern.
This invention relates to semiconductor manufacturing, specifically addressing electrical shorts between conductive patterns in integrated circuits. The problem occurs when conductive patterns, such as metal lines or vias, are improperly formed or misaligned, leading to unintended electrical connections that disrupt circuit functionality. The invention provides a method to identify and mitigate such risks by defining a bridge risk region—a zone where an electrical short is likely to occur between two conductive patterns. The method involves analyzing the layout of the conductive patterns to determine areas where the spacing between them is insufficient to prevent shorting. By identifying these high-risk zones, manufacturers can adjust the design or manufacturing process to avoid shorts, improving yield and reliability. The bridge risk region is dynamically calculated based on the geometric relationship between the conductive patterns, ensuring accurate detection of potential shorting points. This approach enhances defect detection in semiconductor fabrication, reducing failures caused by conductive pattern bridging.
19. The method of claim 17 , wherein the first to fourth patterns extend in parallel to each other in a second direction crossing the first direction.
This invention relates to a method for forming patterns on a substrate, particularly in semiconductor manufacturing or microfabrication. The problem addressed is the precise alignment and arrangement of multiple patterns on a substrate to ensure accurate and efficient fabrication of microstructures. The method involves forming at least four distinct patterns on a substrate, where each pattern extends in parallel to the others in a second direction that crosses a first direction. The first direction is typically the primary alignment direction for the patterns, while the second direction ensures that the patterns are uniformly spaced and oriented relative to each other. This parallel arrangement in the second direction allows for precise control over the spacing and alignment of the patterns, which is critical for applications requiring high-precision microfabrication, such as integrated circuits or microelectromechanical systems (MEMS). The method may also include forming additional patterns that are aligned in the first direction, ensuring that the overall structure maintains both horizontal and vertical alignment. The parallel arrangement in the second direction helps minimize misalignment errors, improving the yield and performance of the fabricated devices. This technique is particularly useful in processes where multiple layers of patterns must be accurately overlaid, such as in photolithography or etching processes. The invention ensures that the patterns remain consistently aligned, reducing defects and enhancing the reliability of the final product.
20. The method of claim 17 , wherein, after biasing, the first bulging region and the second bulging region are spaced apart from each other.
This invention relates to a method for forming a semiconductor device with spaced-apart bulging regions. The method addresses the challenge of precisely controlling the formation of bulging regions in semiconductor structures to ensure proper spacing, which is critical for device performance and reliability. The process involves biasing a substrate to create at least two bulging regions, where the biasing step induces localized deformation in the substrate material. After biasing, the first and second bulging regions are intentionally spaced apart from each other to prevent unwanted interactions or short circuits. The spacing ensures that the bulging regions function independently, which is essential for applications such as transistors, memory cells, or other semiconductor components where precise structural control is required. The method may include additional steps such as etching, deposition, or thermal treatment to refine the bulging regions and integrate them into a functional device. The invention improves manufacturing consistency and device reliability by ensuring the bulging regions remain separated, reducing defects and enhancing electrical isolation.
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December 22, 2020
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