Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A memory system comprising: a semiconductor storage device including a plurality of blocks, each block including a plurality of memory cell transistors; and a memory controller for the semiconductor storage device, wherein the plurality of blocks include a first block and a second block, and the memory cell transistor in the first block stores data having a first number of bits during a first period and stores data having a second number of bits larger than the first number during a second period that begins after the first period ends, wherein, upon receiving a first data set from an external host device, the memory controller causes the semiconductor storage device to execute a write operation in a first write mode, according to which the first number of bits is stored per memory cell transistor, to write the first data set into the first block, and wherein the memory controller causes the semiconductor storage device to execute a read operation of the first data set written into the first block in the first write mode, and causes the semiconductor storage device to execute a write operation in a second write mode, according to which the second number of bits is stored per memory cell transistor, to write the first data set read by executing the read operation into the second block.
This invention relates to a memory system designed to improve storage efficiency by dynamically adjusting the number of bits stored per memory cell transistor. The system includes a semiconductor storage device with multiple blocks, each containing memory cell transistors, and a memory controller. The key innovation involves transitioning blocks from storing a smaller number of bits (e.g., single-bit storage) to a larger number of bits (e.g., multi-bit storage) over time. Initially, a first block stores data in a first write mode, where each memory cell transistor holds a first number of bits. Later, the same data is read from the first block and rewritten into a second block in a second write mode, where each memory cell transistor stores a second, larger number of bits. This approach allows the system to initially prioritize fast write operations with lower bit density and later optimize storage capacity by increasing bit density. The memory controller manages these operations, ensuring data integrity during the transition. The system is particularly useful for balancing performance and storage efficiency in applications where data access patterns change over time.
2. The memory system according to claim 1 , wherein the memory controller executes the write operation on the first block during the first period, executes an erasing operation on the first block between the first period and the second period, and executes the write operation in the second write mode on the first block during the second period.
This invention relates to memory systems, specifically non-volatile memory systems like flash memory, addressing the challenge of efficiently managing write and erase operations to improve performance and endurance. The system includes a memory controller that controls write and erase operations on memory blocks, where the memory blocks are divided into a first block and a second block. The memory controller performs a write operation on the first block during a first period, then executes an erasing operation on the first block between the first period and a second period. During the second period, the memory controller performs a write operation on the first block in a second write mode, which differs from the first write mode. The second write mode may involve different parameters, such as voltage levels, programming speed, or error correction techniques, to optimize performance or endurance. The system ensures that the first block is erased before the second write operation, preventing data corruption and maintaining data integrity. This approach allows for flexible and efficient memory management, improving overall system performance and longevity.
3. The memory system according to claim 1 , wherein the memory controller causes the semiconductor storage device to execute each of the read operation on the first data set and the write operation in the second write mode on the first data set independently of any instruction received from the host device.
A memory system includes a memory controller and a semiconductor storage device, such as a NAND flash memory, designed to improve data management efficiency. The system addresses the problem of inefficient data handling in storage devices, particularly during read and write operations, which can lead to performance bottlenecks and increased latency. The memory controller is configured to manage data operations in different modes to optimize performance. In a first write mode, the controller writes data to the storage device in a manner that allows for efficient subsequent read operations. In a second write mode, the controller writes data in a way that prioritizes speed or other performance metrics over immediate readability. The system also includes a host device that communicates with the memory controller to initiate data operations. The memory controller can independently execute read operations on a first data set and write operations in the second write mode on the same data set without requiring further instructions from the host device. This autonomy allows the system to handle data more efficiently, reducing latency and improving overall performance. The semiconductor storage device may include multiple memory chips or modules, and the controller can manage data distribution across these components to further enhance efficiency. The system is particularly useful in applications requiring high-speed data processing, such as enterprise storage systems or real-time data analytics.
4. The memory system according to claim 1 , wherein the first and second write modes are different write modes selected from a write mode causing the memory cell transistor to store 1-bit data, a write mode causing the memory cell transistor to store 2-bit data, a write mode causing the memory cell transistor to store 3-bit data, and a write mode causing the memory cell transistor to store 4-bit data, and the first write mode causes the memory cell transistor to store less number of bits per memory transistor than the second write mode.
This invention relates to a memory system with a memory cell transistor capable of storing multiple bits of data using different write modes. The system addresses the challenge of optimizing memory storage efficiency by allowing the same memory cell to operate in multiple write modes, each corresponding to a different number of bits stored per transistor. The write modes include storing 1-bit, 2-bit, 3-bit, or 4-bit data per memory cell transistor. The system dynamically selects between a first write mode, which stores fewer bits per transistor, and a second write mode, which stores more bits per transistor. This flexibility enables the memory system to balance storage density and reliability, as higher bit storage modes may reduce endurance or increase error rates. The system may switch between modes based on factors such as data importance, access frequency, or wear leveling requirements. By supporting multiple write modes, the memory system can adapt to different performance and reliability needs while maximizing storage efficiency. The invention improves upon traditional memory systems that operate in a single fixed mode, offering greater versatility in managing data storage.
5. The memory system according to claim 1 , further comprising: a table storing information on a number of times the write operation is executed in the first write mode, and a number of times the write operation is executed in the second write mode, for each of the plurality of blocks, wherein the memory controller is configured to execute a wear leveling control based on the information stored in the table.
This invention relates to memory systems, specifically non-volatile memory systems like flash memory, addressing wear leveling to extend the lifespan of memory blocks. The problem solved is uneven wear across memory blocks, where some blocks experience more write operations than others, leading to premature failure. The memory system includes a memory device with multiple blocks and a memory controller. The controller supports two write modes: a first mode for writing data to a block and a second mode for writing data to a block while also performing a background operation, such as garbage collection. The system tracks the number of write operations in each mode for every block using a table. The controller uses this data to perform wear leveling, redistributing write operations across blocks to balance wear and prolong the memory's lifespan. The table stores counts of write operations in both modes for each block, allowing the controller to monitor wear patterns. Wear leveling control adjusts write operations based on these counts, ensuring no single block is overused. This approach improves memory endurance by distributing wear evenly, preventing early failure of frequently accessed blocks. The system dynamically adapts to usage patterns, optimizing longevity without manual intervention.
6. The memory system according to claim 5 , wherein the memory controller is configured to execute the wear leveling control so that the number of times the write operation is executed in the first write mode is larger than the number of times the write operation is executed in the second write mode in each of the plurality of blocks.
This invention relates to memory systems, specifically addressing wear leveling in non-volatile memory devices. The problem being solved is uneven wear across memory blocks, which reduces the lifespan of the memory system. The invention improves wear leveling by controlling write operations in different modes to distribute wear more evenly. The memory system includes a memory controller and multiple memory blocks. The controller manages write operations in two distinct modes: a first write mode and a second write mode. The first write mode is designed to handle more frequent write operations compared to the second write mode. The controller ensures that, across all memory blocks, the number of write operations performed in the first mode is consistently higher than those in the second mode. This differential distribution helps balance wear across blocks, extending the overall lifespan of the memory system. The memory controller also performs wear leveling control, dynamically adjusting write operations to maintain an even distribution of wear. By prioritizing the first write mode for more frequent operations, the system avoids overusing specific blocks, thereby mitigating premature failure. The invention is particularly useful in high-endurance memory applications where wear leveling is critical for longevity.
7. The memory system according to claim 6 , wherein the first number of bits is 1, and the second number of bits is 2, and the memory controller is configured to execute the wear leveling control so that a ratio of the number of times the write operation is executed in the first write mode to the number of times the write operation is executed in the second write mode is approximately 2:1 in each of the plurality of blocks.
A memory system includes a memory controller and a non-volatile memory device with multiple blocks. The system addresses wear leveling, which is the process of distributing write operations evenly across memory blocks to extend the lifespan of the memory device. The memory controller supports two write modes: a first mode that writes data to a single page and a second mode that writes data to multiple pages. The controller is configured to execute wear leveling control such that the ratio of write operations in the first mode to the second mode is approximately 2:1 across all blocks. Specifically, the first mode involves writing 1 bit of data, while the second mode involves writing 2 bits of data. By maintaining this ratio, the system ensures balanced wear across the memory blocks, preventing premature degradation of any single block. The wear leveling control dynamically adjusts the distribution of write operations to maintain this ratio, optimizing the lifespan of the memory device. This approach is particularly useful in non-volatile memory systems where write endurance is a critical factor.
8. The memory system according to claim 6 , wherein the first number of bits is 1, and the second number of bits is 3, and the memory controller is configured to execute the wear leveling control so that a ratio of the number of times the write operation is executed in the first write mode to the number of times the write operation is executed in the second write mode is approximately 3:1 in each of the plurality of blocks.
A memory system designed for wear leveling in non-volatile memory, such as NAND flash, addresses the problem of uneven wear across memory blocks by balancing write operations between two modes. The system includes a memory controller that manages a plurality of blocks, each capable of operating in two distinct write modes. The first write mode writes a single bit per memory cell (SLC mode), while the second write mode writes three bits per memory cell (TLC mode). The controller executes wear leveling control to maintain a specific ratio of write operations between these modes. Specifically, the ratio of the number of write operations performed in SLC mode to those in TLC mode is approximately 3:1 within each block. This ratio ensures that higher-wear SLC operations are less frequent than lower-wear TLC operations, thereby extending the overall lifespan of the memory system by reducing wear on individual blocks. The system dynamically adjusts write operations to sustain this balance, optimizing endurance while maintaining performance and storage density.
9. The memory system according to claim 6 , wherein the first number of bits is 1, and the second number of bits is 4, and the memory controller is configured to execute the wear leveling control so that a ratio of the number of times the write operation is executed in the first write mode to the number of times the write operation is executed in the second write mode is approximately 4:1 in each of the plurality of blocks.
This invention relates to a memory system with improved wear leveling control for non-volatile memory, particularly to balance write operations across memory blocks to extend device lifespan. The system includes a memory controller that manages write operations in two distinct modes: a first mode where a single bit is written per operation, and a second mode where four bits are written per operation. The controller enforces a 4:1 ratio of first-mode writes to second-mode writes across all memory blocks, ensuring uniform wear distribution. This approach prevents certain blocks from experiencing excessive wear due to frequent writes, thereby prolonging the overall endurance of the memory system. The controller dynamically adjusts write operations to maintain this ratio, optimizing performance while mitigating wear disparities. The system is particularly useful in high-write environments like solid-state drives or embedded storage, where uneven wear can lead to premature failure. By strictly regulating the write operation distribution, the invention enhances reliability and lifespan without requiring additional hardware components.
10. The memory system according to claim 6 , wherein wherein the first number of bits is 2 bits, and the second number of bits is 3, and the memory controller is configured to execute the wear leveling control so that a ratio of the number of times the write operation is executed in the first write mode to the number of times the write operation is executed in the second write mode is approximately 3:2 in each of the plurality of blocks.
A memory system designed for wear leveling in non-volatile storage, such as NAND flash memory, where write operations are distributed across blocks to extend device lifespan. The system uses two write modes with different bit resolutions: a first mode writing 2 bits per memory cell (MLC) and a second mode writing 3 bits per cell (TLC). A memory controller dynamically allocates write operations between these modes to balance wear across blocks. Specifically, the controller ensures that for each block, the ratio of write operations executed in the 2-bit mode to those in the 3-bit mode is approximately 3:2. This targeted wear leveling reduces uneven cell degradation, preventing premature failure of high-usage blocks while optimizing storage density. The approach leverages the lower write amplification of 2-bit writes to compensate for the higher wear rate of 3-bit writes, maintaining balanced endurance across the memory array.
11. The memory system according to claim 6 , wherein the first number of bits is 2, and the second number of bits is 4, and the memory controller is configured to execute the wear leveling control so that a ratio of the number of times the write operation is executed in the first write mode to the number of times the write operation is executed in the second write mode is approximately 2:1.
This invention relates to a memory system with wear leveling control for managing write operations in different modes to extend the lifespan of non-volatile memory. The system addresses the problem of uneven wear in memory cells, which occurs when certain cells are written to more frequently than others, leading to premature failure. The memory system includes a memory controller that supports at least two write modes: a first mode for writing data with a first number of bits (e.g., 2 bits per cell) and a second mode for writing data with a second number of bits (e.g., 4 bits per cell). The controller is configured to execute wear leveling control to balance the write operations between these modes. Specifically, the system ensures that the ratio of write operations in the first mode to the second mode is approximately 2:1. This ratio helps distribute wear more evenly across the memory cells, as the first mode (e.g., 2-bit writes) typically causes less wear per operation than the second mode (e.g., 4-bit writes). By controlling the ratio, the system prolongs the overall lifespan of the memory by preventing excessive wear in any single mode. The wear leveling control may involve tracking write counts and dynamically adjusting the distribution of operations between the two modes to maintain the desired ratio.
12. The memory system according to claim 6 , wherein the first number is 3 bits and the second number is 4 bits, and the memory controller is configured to execute the wear leveling control so that a ratio of the number of times the write operation is executed in the first write mode to the number of times the write operation is executed in the second write mode is approximately 4:3 in each of the plurality of blocks.
The technology domain involves a memory system incorporating wear leveling control to manage write operations across multiple blocks. The system addresses the problem of uneven wear in memory blocks by balancing write operations between two distinct write modes. The first write mode uses a 3-bit number to represent data, while the second write mode uses a 4-bit number. The memory controller is designed to execute wear leveling such that, within each of the plurality of blocks, the ratio of the number of write operations performed in the first write mode to those in the second write mode is maintained at approximately 4:3. This ratio ensures more frequent use of the 3-bit write mode while still utilizing the 4-bit mode to balance overall wear across the memory blocks. The system aims to extend the lifespan of the memory by preventing excessive wear in any single block or write mode.
13. The memory system according to claim 1 , wherein the memory cell transistor stores data having a third number of bits larger than the second number during a third period that begins after the second period ends, and stores data having a fourth number of bits larger than the third number during a fourth period that begins after the third period ends.
A memory system includes a memory cell transistor that stores data with varying bit densities over time. Initially, the memory cell transistor stores data with a first number of bits during a first period. After the first period ends, the memory cell transistor stores data with a second number of bits, which is larger than the first number, during a second period. Following the second period, the memory cell transistor stores data with a third number of bits, which is larger than the second number, during a third period. After the third period ends, the memory cell transistor stores data with a fourth number of bits, which is larger than the third number, during a fourth period. This progressive increase in bit density allows the memory system to adapt to different storage requirements over time, optimizing storage efficiency and performance. The memory cell transistor may be part of a larger memory array, where each cell can dynamically adjust its storage capacity based on operational needs. The system may also include control circuitry to manage the transition between different storage modes, ensuring data integrity and reliability during each period. This approach enables flexible memory utilization, accommodating varying data storage demands without requiring physical changes to the memory hardware.
14. A method of performing a write in a memory system comprising a semiconductor storage device including a plurality of blocks, each including a plurality of memory cell transistors, wherein the plurality of blocks includes a first block and a second block, said method comprising: storing, during a first period, in a memory cell transistor of the first block, data having a first number of bits; and storing, during a second period that begins after the first period ends, in the memory cell transistor of the first block, data having a second number of bits that is larger than the first number, wherein, upon receiving a first data set from an external host device, the semiconductor storage device executes a write operation in a first write mode, according to which the first number of bits is stored per memory cell transistor, to write the first data set into the first block, and wherein the semiconductor storage device executes a read operation of the first data set written into the first block in the first write mode, and executes a write operation in a second write mode, according to which the second number of bits is stored per memory cell transistor, to write the first data set read by executing the read operation into the second block.
This invention relates to a method for performing data writes in a semiconductor memory system, specifically addressing the challenge of efficiently managing data storage in memory devices with multiple blocks of memory cell transistors. The method involves storing data in a memory cell transistor of a first block during a first period, where the data has a first number of bits. Subsequently, during a second period that begins after the first period ends, the same memory cell transistor stores data with a second number of bits, which is larger than the first number. The semiconductor storage device receives a first data set from an external host device and executes a write operation in a first write mode, storing the first number of bits per memory cell transistor to write the data set into the first block. The device then reads the first data set from the first block and performs a write operation in a second write mode, storing the second number of bits per memory cell transistor, to rewrite the data set into a second block. This approach allows for flexible data storage by initially storing fewer bits per cell and later increasing the storage density, optimizing memory usage and performance. The method ensures compatibility with different write modes, enabling efficient data migration and storage optimization in semiconductor memory systems.
15. The method according to claim 14 , wherein: the semiconductor storage device executes the write operation on the first block during the first period; the semiconductor storage device executes an erasing operation on the first block between the first period and the second period; and the semiconductor storage device executes the write operation in the second write mode on the first block during the second period.
This invention relates to a method for managing write operations in a semiconductor storage device, particularly focusing on optimizing data handling in memory blocks. The problem addressed is the need to efficiently perform write and erase operations in semiconductor storage devices to maintain performance and reliability. The method involves executing write operations in different modes to improve data handling efficiency. The semiconductor storage device performs a write operation on a first block during a first period. After this, an erasing operation is executed on the first block between the first and second periods. During the second period, the device performs another write operation on the first block, but this time in a second write mode. The second write mode may differ from the first in terms of parameters such as voltage levels, timing, or data handling techniques, allowing for optimized performance based on the device's state or requirements. This approach ensures that the storage device can efficiently manage data writes and erasures, enhancing overall performance and longevity. The method is particularly useful in flash memory and other non-volatile storage technologies where wear leveling and efficient data management are critical.
16. The method according to claim 15 , wherein the read operation on the first data set and the write operation in the second write mode on the first data set are executed independently of any instruction received from the host device.
This invention relates to data storage systems, specifically methods for managing read and write operations in a storage device to improve performance and reliability. The problem addressed is the inefficiency and potential data corruption that can occur when read and write operations conflict, particularly in systems where a host device may issue conflicting commands. The method involves performing a read operation on a first data set and a write operation in a second write mode on the same first data set. The read and write operations are executed independently of any instructions received from a host device, meaning they are controlled by the storage device itself rather than being triggered by external commands. This independence allows the storage device to optimize operations without waiting for host intervention, reducing latency and improving efficiency. The second write mode is a specific mode of writing data that may involve techniques such as wear leveling, error correction, or background maintenance tasks. By performing these operations autonomously, the storage device can ensure data integrity and longevity while minimizing disruptions to host-initiated operations. The method may also include determining whether the first data set is in a valid state before executing the read and write operations, ensuring that only reliable data is processed. This approach enhances system performance by allowing the storage device to manage its own operations proactively, reducing the risk of conflicts and improving overall reliability.
17. The method according to claim 15 , wherein the first and second write modes are different write modes selected from a write mode causing the memory cell transistor to store 1-bit data, a write mode causing the memory cell transistor to store 2-bit data, a write mode causing the memory cell transistor to store 3-bit data, and a write mode causing the memory cell transistor to store 4-bit data, and the first write mode causes the memory cell transistor to store less number of bits per memory transistor than the second write mode.
This invention relates to memory cell technology, specifically methods for writing data to memory cell transistors with variable bit storage capabilities. The problem addressed is the need for flexible data storage in memory cells, allowing different levels of data density based on operational requirements. The method involves selecting between multiple write modes for a memory cell transistor, where each mode corresponds to storing a different number of bits per transistor. The available write modes include storing 1-bit, 2-bit, 3-bit, or 4-bit data per transistor. The method ensures that a first write mode stores fewer bits per transistor than a second write mode, enabling dynamic adjustment of storage density. This flexibility allows the memory system to optimize performance, power consumption, or endurance based on the selected write mode. The invention is particularly useful in non-volatile memory systems where varying data storage requirements exist, such as in flash memory or other solid-state storage devices. By providing multiple write modes, the memory system can adapt to different use cases, such as high-density storage for archival data or lower-density storage for frequently accessed data. The method enhances the versatility of memory cells by allowing them to operate in different storage configurations without requiring hardware changes.
18. The method of claim 14 , further comprising: storing, in a table, information on a number of times the write operation is executed in the first write mode, and a number of times the write operation is executed in the second write mode, for each of the plurality of blocks; and executing a wear leveling control based on the information stored in the table.
This invention relates to memory management in storage devices, specifically addressing wear leveling in non-volatile memory systems. The problem solved is uneven wear across memory blocks, which reduces device lifespan. The invention provides a method for tracking and balancing write operations between different write modes to extend memory longevity. The method involves monitoring write operations in a memory system that supports at least two write modes. For each memory block, the system records the number of write operations performed in each mode. This data is stored in a table, allowing the system to assess wear distribution across blocks. Based on this information, a wear leveling control mechanism is executed to redistribute write operations more evenly. This ensures that no single block is overused, thereby prolonging the overall lifespan of the memory device. The wear leveling control may involve redirecting future write operations to less frequently used blocks or performing data relocation to balance wear. The method is particularly useful in flash memory and other non-volatile storage technologies where write cycles are limited. By dynamically tracking and adjusting write distributions, the system optimizes memory endurance and reliability.
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December 29, 2020
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