Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. An integrated circuit device comprising: a first signaling interface to be coupled to a dynamic random access memory component (DRAM), the DRAM having a first register to store a first control value and a second register to store a second control value; and control circuitry to transmit to the DRAM via the first signaling interface one or more commands that instruct the DRAM to: store the first control value within the first register of the DRAM, the first control value specifying a first termination to be applied to a data interface of the DRAM during a write-data reception interval in which write data is received by the DRAM via the data interface; and store the second control value within the second register of the DRAM, the second control value specifying a second termination that is to be applied to the data interface after the write-data reception interval transpires.
2. The integrated circuit device of claim 1 wherein the control circuitry is further to transmit to the DRAM via the first signaling interface a write command to be received by the DRAM a predetermined time prior to the write-data reception interval.
The invention relates to integrated circuit devices, specifically those interfacing with dynamic random-access memory (DRAM). The problem addressed is optimizing data transfer efficiency and timing synchronization between an integrated circuit and DRAM, particularly for write operations. Traditional systems may suffer from misalignment between command and data signals, leading to inefficiencies or errors. The invention describes an integrated circuit device with control circuitry that manages communication with DRAM via a signaling interface. The control circuitry is configured to transmit a write command to the DRAM a predetermined time before the interval during which write data is received. This ensures the DRAM is properly prepared to receive the data, improving synchronization and reducing latency. The device may also include additional circuitry to generate timing signals or manage data paths, ensuring precise coordination between command and data transfers. The predetermined time delay is calculated to account for DRAM latency and processing requirements, optimizing performance. This approach enhances reliability and efficiency in memory operations, particularly in high-speed or high-bandwidth applications.
3. The integrated circuit device of claim 2 wherein the control circuitry to transmit the write command to the DRAM comprises circuitry to cause the DRAM, by transmission of the write command and reception thereof within the DRAM, to apply the first termination to the data interface of the DRAM during the write data reception interval and to apply the second termination to the data interface of the DRAM after the write-data reception interval transpires.
4. The integrated circuit device of claim 1 wherein the first signaling interface comprises a plurality of command/address signal transmitters and a plurality of data signal transceivers and wherein the control circuitry is further to transmit the write data to the DRAM via the plurality of data signal transceivers such that the write data arrives at the data interface of the DRAM during the write-data reception interval.
5. The integrated circuit device of 4 further comprising a second signaling interface comprising a plurality of command/address signal receivers to receive commands from a memory controller and a plurality of data signal transceivers to output data signals to and receive data signals from the memory controller.
An integrated circuit device includes a first signaling interface with multiple command/address signal receivers to receive commands from a memory controller and multiple data signal transceivers to output data signals to and receive data signals from the memory controller. The device further includes a second signaling interface with a similar set of command/address signal receivers and data signal transceivers, enabling dual-channel communication with the memory controller. This dual-interface design allows for increased data throughput and redundancy, addressing limitations in single-channel memory systems where bandwidth and reliability are constrained. The command/address receivers decode instructions from the memory controller, while the data transceivers handle bidirectional data transfer, ensuring efficient synchronization between the memory controller and the integrated circuit. The second signaling interface operates independently or in tandem with the first, providing flexibility in memory access patterns and improving overall system performance. This configuration is particularly useful in high-performance computing, where parallel data processing and fault tolerance are critical. The device may be implemented in memory modules, processors, or other integrated circuits requiring high-speed, low-latency communication with memory controllers.
6. The integrated circuit device of claim 4 wherein the control circuitry to transmit the one or more commands to the DRAM via the first signaling interface comprises circuitry to transmit the one or more commands to the DRAM via the command/address signal transmitters.
7. The integrated circuit device of claim 1 wherein the control circuitry to transmit the one or more commands to the DRAM via the first signaling interface additionally transmits the one or more control values to the DRAM via the first signaling interface.
8. The integrated circuit device of claim 7 wherein the control circuitry to transmit the first and second control values to the DRAM comprises circuitry to transmit, via the first signaling interface, a first digital value that corresponds to the first termination and a second digital value that corresponds to the second termination.
9. The integrated circuit device of claim 8 wherein the first digital value comprises a first bit pattern indicative of an impedance of the first termination, and the second digital value comprises a second bit pattern indicative of an impedance of the second termination, wherein the first bit pattern and the second bit pattern are different.
10. The integrated circuit device of claim 1 wherein the first and second terminations comprise first and second impedance values, the first impedance value being higher than the second impedance value.
11. A method of operation within an integrated circuit device, the method comprising: transmitting, to a dynamic random access memory component (DRAM) via a first signaling interface, one or more commands that instruct the DRAM to: store a first control value within a first register of the DRAM, the first control value specifying a first termination to be applied to a data interface of the DRAM during a write-data reception interval in which write data is received by the DRAM via the data interface; and store a second control value within a second register of the DRAM, the second control value specifying a second termination that is to be applied to the data interface after the write-data reception interval transpires; and transmitting to the DRAM via the first signaling interface a write command indicating that the write data is to be received within the DRAM component.
12. The method of claim 11 further comprising transmitting the write data to the DRAM via the first signaling interface.
A method for managing data storage in a memory system addresses the challenge of efficiently handling write operations in systems with multiple memory types, such as DRAM and non-volatile memory. The method involves receiving write data from a host system and determining whether to store the data in a DRAM or a non-volatile memory based on predefined criteria, such as data size, access frequency, or system performance requirements. If the data is designated for DRAM storage, the method includes transmitting the write data to the DRAM through a first signaling interface, which may be optimized for high-speed data transfer. The method may also involve managing data consistency between the DRAM and non-volatile memory, ensuring that critical data is retained even in the event of a power loss. Additionally, the method may include monitoring system performance metrics to dynamically adjust storage allocation between the DRAM and non-volatile memory, optimizing overall system efficiency. The approach aims to balance speed and reliability by leveraging the fast access times of DRAM for frequently accessed data while utilizing non-volatile memory for long-term storage.
13. The method of claim 11 wherein transmitting the write command to the DRAM comprises causing the DRAM to apply the first termination to the data interface of the DRAM during the write data reception interval and to apply the second termination to the data interface of the DRAM after the write-data reception interval transpires.
14. The method of claim 11 wherein the first signaling interface comprises a plurality of command/address signal transmitters and a plurality of data signal transceivers, the method further comprising transmitting the write data to the DRAM via the plurality of data signal transceivers such that the write data arrives at the data interface of the DRAM during the write-data reception interval.
15. The method of 14 further receiving commands from a memory controller via a second signaling interface and outputting data signals to and receiving data signals from the memory controller via the second signaling interface.
16. The method of claim 14 wherein transmitting the one or more commands that instruct the DRAM to store the first and second control values comprises transmitting the one or more commands to the DRAM via the command/address signal transmitters.
17. The method of claim 11 further comprising transmitting the first and second control values to the DRAM via the first signaling interface.
18. The method of claim 17 wherein transmitting the first and second control values to the DRAM comprises transmitting, via the first signaling interface, a first digital value that corresponds to the first termination and a second digital value that corresponds to the second termination.
19. The method of claim 18 wherein the first digital value comprises a first bit pattern indicative of an impedance of the first termination, and the second digital value comprises a second bit pattern indicative of an impedance of the second termination, the impedance of the first termination being higher than the impedance of the second termination.
20. An integrated circuit device comprising: a first signaling interface to be coupled to a dynamic random access memory component (DRAM); and means for transmitting to the DRAM via the first signaling interface one or more commands that instruct the DRAM to: store a first control value within a first register of the DRAM, the first control value specifying a first termination to be applied to a data interface of the DRAM during a write-data reception interval in which write data is received by the DRAM via the data interface; and store a second control value within a second register of the DRAM, the second control value specifying a second termination that is to be applied to the data interface after the write-data reception interval transpires.
This invention relates to integrated circuit devices designed to interface with dynamic random access memory (DRAM) components, addressing challenges in managing signal integrity during data transmission. The device includes a signaling interface for communication with the DRAM and a mechanism to transmit commands that configure the DRAM's termination settings dynamically. Specifically, the device instructs the DRAM to store a first control value in a first register, which specifies a first termination resistance to be applied to the DRAM's data interface during a write-data reception interval. This termination setting optimizes signal integrity while data is actively being written to the DRAM. After the write operation completes, the device commands the DRAM to store a second control value in a second register, which specifies a second termination resistance to be applied post-write. This second termination setting may differ from the first, allowing for adjustments based on operational conditions or power efficiency requirements. By dynamically adjusting termination resistance, the invention improves signal integrity, reduces power consumption, and enhances overall system performance. The solution is particularly useful in high-speed memory systems where precise control over signal termination is critical.
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March 9, 2021
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