Semiconductor Device Including an Oxide Thin Film Transistor

2. The semiconductor device of claim 1, wherein the first control electrode and the upper electrode each at least partially overlap the first semiconductor pattern in the direction perpendicular to the plane of the base substrate.

3. The semiconductor device of claim 2, wherein the first control electrode is disposed between the first semiconductor pattern and the upper electrode.

5. The semiconductor device of claim 4, wherein the second control electrode is disposed above the second semiconductor pattern in the direction perpendicular to the plane of the base substrate.

6. The semiconductor device of claim 4, wherein the third insulating layer comprises a first portion at least partially overlapping, in the direction perpendicular to the plane of the base substrate, the second control electrode and a second portion at least partially overlapping the first control electrode in the direction perpendicular to the plane of the base substrate.

7. The semiconductor device of claim 6, wherein the second portion is disposed between the first control electrode and the upper electrode.

8. The semiconductor device of claim 1, wherein the first semiconductor pattern and the second semiconductor pattern are disposed on different layers from each other.

9. The semiconductor device of claim 8, wherein an end of the first semiconductor pattern and an end of the second semiconductor pattern are aligned along a same imaginary line in a plan view.

10. The semiconductor device of claim 1, wherein the connection electrode penetrates at least a portion of the second semiconductor pattern to be connected to the second semiconductor pattern and the first semiconductor pattern.

11. The semiconductor device of claim 1, further comprising an organic light emitting diode connected to the first output electrode.