Method of Manufacturing a Thin-Film Transistor Having an Active Layer Formed Using Atomic Layer Deposition

2. The method of claim 1, wherein the step of forming of the active layer comprises performing an ALD cycle for forming the at least one oxide layer at least once, and the ALD cycle comprises a first deposition cycle for forming the first oxide layer on the target substrate and a second deposition cycle for forming the second oxide layer on the first oxide layer.

3. The method of claim 2, wherein the ALD cycle further comprises a third deposition cycle for forming a third oxide layer containing Zinc (Zn) between the second oxide layer and the first oxide layer.

4. The method of claim 3, wherein, in the ALD cycle, the second deposition cycle is performed one or more times, and the first deposition cycle and the third deposition cycle are performed in equal proportions.

5. The method of claim 1, wherein the active layer comprises indium-tin oxide (ITO), indium-zinc-tin oxide (IZTO), indium-gallium-tin oxide (IGTO), or indium-gallium-zinc-tin oxide (IGZTO).

6. The method of claim 5, wherein content of the Sn in the active layer ranges from about 10 wt. % to about 16 wt. %.