Film Deposition System, Factory System, and Method of Depositing Film on Wafer

2. The film deposition system according to claim 1, wherein an energy function of the Ising model or the QUBO indicates a value corresponding to a throughput of the film deposition apparatus.

3. The film deposition system according to claim 1, wherein the Ising model or the QUBO has the first elements that interact with each other due to an interaction parameter, and the interaction parameter is determined from values corresponding to a transfer time of a wafer to be deposited on and a processing time in each process required to process the transferred wafer at a specific slot in one of the chambers.

14. The film deposition system according to claim 13, wherein the storage reacquires a disposition of the deposition species used for prediction and a time required for the predicted film deposition as the teacher data.