Method and System for Recognizing and Addressing Plasma Discharge During Semiconductor Processes

3. The system of claim 1, wherein the plurality of video images includes infrared images, wherein the control system is configured to generate a thermal distribution based on the infrared images.

4. The system of claim 3, wherein the control system is configured to detect the arcing based on the thermal distribution.

5. The system of claim 1, wherein the control system is configured to detect that the video stream plurality of video images corresponds to characteristics of arcing.

6. The system of claim 1, wherein the control system is configured to detect the plasma discharge by analyzing the video stream with an analysis model trained with a machine learning process.

9. The system of claim 7, further comprising a wireless communication system communicatively coupling the plurality of groups of cameras to the control system.

10. The system of claim 7, further comprising imaging optics configured to pass light from the semiconductor process chamber to the plurality of groups of cameras.

12. The system of claim 11, wherein each output circuit includes a communication system coupled to the signal processor and configured to output the plurality of images to the control system.

15. The system of claim 11, wherein the plasma assisted semiconductor process is a thin-film deposition process.

16. The system of claim 11, wherein the plurality of images includes infrared images, wherein the control system is configured to generate a thermal distribution based on the infrared images.

17. The system of claim 16, wherein the control system is configured to detect the arcing based on the thermal distribution.

18. The system of claim 1, further comprising a wireless communication system communicatively coupling the plurality of groups of cameras to the control system.

19. The system of claim 1, further comprising imaging optics configured to pass light from the semiconductor process chamber to the plurality of groups of cameras.

20. The system of claim 1, wherein the plasma assisted semiconductor process is a thin-film etching process.