Novel Puf Generators Based on Sram Bit Cells

2. The PUF generator of claim 1, wherein each of the plurality of bit cells comprises at least two pre-charge transistors, at least one enable transistor, and at least two storage nodes, wherein the at least two storage nodes are pre-charged with the same voltages by the respective at least two pre-charge transistors allowing each of the plurality of bit cells to have the first logical state.

3. The PUF generator of claim 2, wherein the plurality of bit cells each further comprises two cross-coupled inverters and two access transistors.

4. The PUF generator of claim 3, wherein the at least two pre-charge transistors each is coupled between a first voltage and a respective storage node.

5. The PUF generator of claim 3, wherein the at least two pre-charge transistors each comprises a NMOS transistor.

7. The PUF generator of claim 1, wherein the authentication circuit is further configured to use the second logical states of the bit cells in the at least one row of the PUF cell array to generate the PUF signature.

9. The method of claim 8, further comprising pre-charging each of the plurality of bit cells to place each of the plurality of bit cells in the first metastable logic state.

10. The method of claim 9, wherein each of the plurality of bit cells comprises at least two pre-charge transistors, at least one enable transistor, and at least two storage nodes, wherein the at least two storage nodes are pre-charged with the same voltages by the respective at least two pre-charge transistors allowing each of the plurality of bit cells to have a first logical state.

11. The method of claim 10, wherein the at least two pre-charge transistors each comprises a NMOS transistor.

12. The method of claim 10, further comprising providing a first voltage, a power supply voltage, and a word line (WL) voltage to the plurality of bit cells.

14. The method of claim 8, further comprising using the second logical states of the bit cells in the at least one row of the PUF cell array to generate the PUF signature.

16. The PUF generator of claim 15, wherein the at least one stressed condition comprises a stressed read condition and a stressed write condition.

17. The PUF generator of claim 15, wherein each of the plurality of bit cells comprises at least two pre-charge transistors, at least one enable transistor, and at least two storage nodes, wherein the at least two storage nodes are pre-charged with the same voltages by the respective at least two pre-charge transistors allowing each of the plurality of bit cells to have the first logical state.

18. The PUF generator of claim 16, wherein the plurality of bit cells each further comprises two cross-coupled inverters and two access transistors.

19. The PUF generator of claim 16, wherein the at least two pre-charge transistors each is coupled between the first voltage and a respective storage node.