Flash Memory Chip That Modulates Its Program Step Voltage as a Function of Chip Temperature

1. An apparatus, comprising: a flash memory chip comprising: a chip interface to receive commands; a first array of stacked storage cells; a temperature sensing device; and, a controller coupled to the chip interface, the first array of stacked storage cells and the temperature sensing device, wherein the controller is to modulate a program step size voltage applied to the first array of stacked storage cells based on a temperature of the flash memory chip as measured by the temperature sensing device, wherein the controller is to decrease the program step size voltage as the temperature of the flash memory chip moves away from a midpoint temperature of a rated temperature range of the flash memory chip and toward a maximum temperature of the rated temperature range of the flash memory chip and is to decrease the program step size voltage as the temperature of the flash memory chip moves away from the midpoint temperature of the rated temperature range of the flash memory chip and toward a minimum temperature of the rated temperature range of the flash memory chip, wherein, a singular temperature from the midpoint temperature of the rated temperature range of the flash memory chip to the minimum temperature of the rated temperature range of the flash memory chip is able to be assigned its own unique respective program step size voltage.

2. The apparatus of claim 1 wherein the controller is to increase the program step size voltage as the temperature of the flash memory chip approaches the midpoint temperature of the rated temperature range of the flash memory chip.

3. The apparatus of claim 2 wherein the increase of the program step size voltage is to happen in both warming and cooling directions of the flash memory chip.

4. The apparatus of claim 2 wherein an increase in the program step size voltage results in wider charge distribution in the first array of stacked storage cells.

5. The apparatus of claim 1 wherein the controller is to set the program step size voltage to a minimum upon at least one of a group of conditions consisting of the maximum temperature of the rated temperature range of the flash memory chip and a minimum temperature of the rated temperature range of the flash memory chip.

6. The apparatus of claim 5 wherein the program step size voltage, which is set to the minimum, results in narrowest charge distributions within the first array of stacked storage cells.

7. A computing system, comprising: a plurality of processing cores; a system memory; a system memory controller coupled to the system memory; a peripheral control hub; and, a memory device coupled to the system memory controller or the peripheral control hub, the memory device comprising a flash memory chip, the flash memory chip: a chip interface to receive commands; a first array of stacked storage cells; a temperature sensing device; and, a controller coupled to the chip interface, the first array of stacked storage cells and the temperature sensing device, wherein the controller is to modulate a program step size voltage applied to the first array of stacked storage cells based on a temperature of the flash memory chip as measured by the temperature sensing device, wherein the controller is to decrease the program step size voltage as the temperature of the flash memory chip moves away from a midpoint temperature of a rated temperature range of the flash memory chip and toward a maximum temperature of the rated temperature range of the flash memory chip and is to decrease the program step size voltage as the temperature of the flash memory chip moves away from the midpoint temperature of the rated temperature range of the flash memory chip and toward a minimum temperature of the rated temperature range of the flash memory chip, wherein, a singular temperature from the midpoint temperature of the rated temperature range of the flash memory chip to the minimum temperature of the rated temperature range of the flash memory chip is able to be assigned its own unique respective program step size voltage.

8. The computing system of claim 7 wherein the memory device is a component within a solid state drive that is coupled to the peripheral control hub.

9. The computing system of claim 8 wherein the controller is to increase the program step size voltage as the temperature of the flash memory chip approaches the midpoint temperature of the rated temperature range of the flash memory chip.

10. The computing system of claim 9 wherein the increase of the program step size voltage is to happen in both warming and cooling directions of the flash memory chip.

11. The computing system of claim 9 wherein an increase in the program step size voltage results in wider charge distribution in the storage cells.

12. The computing system of claim 8 wherein the controller is to set the program step size voltage to a minimum at upon at least one of agroup of conditions consisting of the maximum temperature of the rated temperature range of the flash memory chip a minimum temperature of the rated temperature range of the flash memory chip.

13. The computing system of claim 12 wherein the program step size voltage, which is set to the minimum, results in narrowest charge distributions within the first array of stacked storage cells.

14. A method, comprising: performing a plurality operations on a flash memory chip, the plurality of operations including: measuring a temperature of the flash memory chip; changing a program step size voltage of a first array of stacked storage cells of the flash memory chip in accordance with a determination that the temperature of the flash memory chip has changed including decreasing the program step size voltage as the temperature of the flash memory chip moves away from a midpoint temperature of a rated temperature range of the flash memory chip and toward a maximum temperature of the rated temperature range of the flash memory chip; and, changing the program step size voltage of the first array of stacked storage cells of the flash memory chip in accordance with a determination that the temperature of the flash memory chip has again changed including decreasing the program step size voltage as the temperature of the flash memory chip moves away from a midpoint temperature of a rated temperature range of the flash memory chip and toward a minimum temperature of the rated temperature range of the flash memory chip, wherein, first, second and third consecutive temperatures within the rated temperature range of the flash memory chip from the midpoint temperature of the rated temperature range of the flash memory chip to the minimum temperature of the rated temperature range of the flash memory chip have different respective program step size voltages.

15. The method of claim 14 wherein the flash memory chip is within a solid state drive.

16. The method of claim 15 wherein the method further comprises changing the program step size voltage in accordance with a determination that the temperature is approaching the midpoint temperature of the rated temperature range of the flash memory chip.

17. The method of claim 16 wherein the temperature is warming.

18. The method of claim 17 wherein the temperature is cooling.

19. The method of claim 16 wherein the program step size voltage's change is an increase in program step size voltage.

20. The method of claim 19 wherein the increase in program step size voltage lessens a program time for a block of the first array of stacked storage cells.