Thin Film Transistor and Method of Making Same

1. A thin film transistor comprising: a first insulating film having a first and a second surface; an active layer positioned on a portion of said first surface of said first insulating film; a second insulating film positioned on said active layer and on said first surface of said first insulating film; a first gate electrode having a first area positioned on said second surface of said first insulating film; a second gate electrode positioned an said second insulating film, said second gate electrode having a second area less than or greater than said first area of said first gate electrode; and a first conductor connected to said first gate electrode for selectively applying a first voltage to said first gate electrode and operate said transistor in conjunction with or independent of said second gate electrode; and a second conductor connected to said second gate electrode for selectively applying a second voltage to said second gate electrode and operate said transistor in conjunction with or independent of said first gate electrode.

2. The thin film transistor according to claim 1 , further including two conductive layers positioned on said active layer, each of said conductive layers including a side wall and a bottom wall connecting said sidewalls therein defining a channel, said bottom wall defined by said active layer.

3. The thin film transistor according to claim 2 , wherein said bottom wall of said channel has a rectangular shape with a predetermined length and width.

4. The thin film transistor according to claim 3 , wherein said first and second gate electrodes each have a rectangular shape with a predetermined length and width.

5. The thin film transistor according to claim 4 , wherein said predetermined width of each of said fist and second gate electrodes is greater than said predetermined width of said bottom wall of said channel.

6. The thin film transistor according to claim 5 , wherein said predetermined length of at least one of said first and second gate electrodes is greater than said predetermined length of said bottom wall of said channel.

7. The thin film transistor according to claim 1 , wherein said first conductor comprises a first controller.

8. The thin film transistor according to claim 1 , wherein said second conductor comprises a second controller.

9. The invention according to claim 1 , wherein said thin film transistor is electrically connected to an organic LED element whereby the brightness of the LED is varied responsive to said gate or gates that are operating said transistors.

10. The invention according to claim 9 , wherein said LED element comprises a plurality of pixels.

11. The invention according to claim 10 , wherein said thin film transistor comprises a driver thin film transistor.

12. The invention according to claim 11 , further including a switching thin film transistor.

13. The invention according to claim 12 , wherein each one of said plurality of pixels includes at least one of said switching thin film transistors and at least one of said driver thin film transistors connected thereto.

14. A method of manufacturing a thin film transistor comprising the steps of: providing a first insulating film having a first and a second surface; positioning an active layer on a portion of said first surface of said first insulating film; positioning a second insulating film on said active layer and on said first surface of said first insulating film; positioning a first gate electrode having a first area on said second surface of said first insulating film; positioning a second gate electrode on said second insulating film, said second gate electrode having a second area less than or greater than said first area of said first gate electrode; connecting a first conductor to said first gate electrode for applying a first voltage to said first gate electrode; and connecting a second conductor to said second gate electrode for applying a second voltage to said second gate electrode.

15. The method of manufacturing a thin film transistor according to claim 14 , wherein said step of positioning said active layer on said portion of said first surface of said fist insulating film is accomplished by chemical vapor deposition.

16. The method of manufacturing a thin film transistor according to claim 14 , wherein said step of positioning said first gate electrode having a first area on said second surface of said first insulating film is accomplished by sputtering or vacuum deposition and photolithography.