Light Emitting Device, Method of Driving a Light Emitting Device, Element Substrate, and Electronic Equipment

1. A light emitting device comprising: a light emitting element; a first transistor, wherein one of a source and a drain of the first transistor is connected to the light emitting element; a second transistor, wherein one of a source and a drain of the second transistor is directly connected to the other of the source and the drain of the first transistor; a third transistor, wherein one of a source and a drain of the third transistor is directly connected to the other of the source and the drain of the second transistor; a power supply line directly connected to the other of the source and the drain of the third transistor; a first scanning line connected to a gate of the first transistor and a gate of the third transistor; a capacitor comprising a first electrode and a second electrode, wherein the first electrode is electrically connected to a gate of the second transistor; a fourth transistor, wherein one of a source and a drain of the fourth transistor is connected to the first electrode of the capacitor; a second scanning line connected to a gate of the fourth transistor; and a fifth transistor, wherein one of a source and a drain of the fifth transistor is connected to the other of the source and the drain of the first transistor.

2. The light emitting device according to claim 1 , wherein the other of the source and the drain of the fourth transistor is connected to the power supply line.

3. The light emitting device according to claim 1 , wherein the second electrode of the capacitor is connected to the one of the source and the drain of the fifth transistor.

4. The light emitting device according to claim 1 , wherein the other of the source and the drain of the fifth transistor is connected to a signal line.

5. The light emitting device according to claim 1 , further comprising a sixth transistor, wherein a gate of the sixth transistor is connected to the gate of the second transistor.

6. A light emitting device comprising: a light emitting element; a first transistor, wherein one of a source and a drain of the first transistor is connected to the light emitting element; a second transistor, wherein one of a source and a drain of the second transistor is directly connected to the other of the source and the drain of the first transistor; a third transistor, wherein one of a source and a drain of the third transistor is directly connected to the other of the source and the drain of the second transistor; a power supply line directly connected to the other of the source and the drain of the third transistor; a first scanning line connected to a gate of the first transistor and a gate of the third transistor; a capacitor comprising a first electrode and a second electrode, wherein the first electrode is electrically connected to a gate of the second transistor; a fourth transistor, wherein one of a source and a drain of the fourth transistor is connected to the first electrode of the capacitor; a second scanning line connected to a gate of the fourth transistor; and a fifth transistor, wherein one of a source and a drain of the fifth transistor is connected to the other of the source and the drain of the first transistor, wherein each of the first to fifth transistors comprises: a semiconductor layer comprising a channel formation region, the semiconductor layer comprising polysilicon.

7. The light emitting device according to claim 6 , wherein the other of the source and the drain of the fourth transistor is connected to the power supply line.

8. The light emitting device according to claim 6 , wherein the second electrode of the capacitor is connected to the one of the source and the drain of the fifth transistor.

9. The light emitting device according to claim 6 , wherein the other of the source and the drain of the fifth transistor is connected to a signal line.

10. The light emitting device according to claim 6 , further comprising a sixth transistor, wherein a gate of the sixth transistor is connected to the gate of the second transistor.

11. A light emitting device comprising: a light emitting element comprising a light emitting layer between a first electrode and a second electrode, the light emitting layer comprising an organic compound capable of emitting light upon application of an electric current; a first transistor, wherein one of a source and a drain of the first transistor is connected to the first electrode of the light emitting element; a second transistor, wherein one of a source and a drain of the second transistor is directly connected to the other of the source and the drain of the first transistor; a third transistor, wherein one of a source and a drain of the third transistor is directly connected to the other of the source and the drain of the second transistor; a power supply line directly connected to the other of the source and the drain of the third transistor; a first scanning line connected to a gate of the first transistor and a gate of the third transistor; a capacitor comprising a first electrode and a second electrode, wherein the first electrode is electrically connected to a gate of the second transistor; a fourth transistor, wherein one of a source and a drain of the fourth transistor is connected to the first electrode of the capacitor; a second scanning line connected to a gate of the fourth transistor; and a fifth transistor, wherein one of a source and a drain of the fifth transistor is connected to the other of the source and the drain of the first transistor.

12. The light emitting device according to claim 11 , wherein the other of the source and the drain of the fourth transistor is connected to the power supply line.

13. The light emitting device according to claim 11 , wherein the second electrode of the capacitor is connected to the one of the source and the drain of the fifth transistor.

14. The light emitting device according to claim 11 , wherein the other of the source and the drain of the fifth transistor is connected to a signal line.

15. The light emitting device according to claim 11 , further comprising a sixth transistor, wherein a gate of the sixth transistor is connected to the gate of the second transistor.