Threshold Voltage Calibration Using Reference Pattern Detection

1. A method, comprising: identifying a predominant type of error of a memory unit of solid state memory cells by discriminating between at least errors caused by charge loss and errors caused by charge gain, the predominant type of error causing a V T shift of the memory unit; calculating a V T offset error differential, the V T offset error differential comprising a difference between a number of errors of the predominant type at a first V T offset and a number of errors of the predominant type at a second V T offset; determining a V T offset using the V T offset error differential; and reading the memory cells using the V T offset.

2. The method of claim 1 , wherein the first V T offset comprises zero offset from a current V T value.

3. The method of claim 1 , wherein the second V T offset comprises a maximum V T offset.

4. The method of claim 1 , wherein determining the predominant type comprises: reading data stored in the memory cells; counting a number of charge loss errors in the data that are due to memory cell charge loss; counting a number of charge gain errors in the data that are due to memory cell charge gain; and comparing the number of charge loss errors to the number of charge gain errors.

5. The method of claim 4 , wherein the charge gain errors and the charge loss errors are caused by voltage shifts between two adjacent voltage levels.

6. The method of claim 1 further comprising calculating an error type differential, the error type differential comprising a difference between a number of charge loss errors and a number of charge gain errors of the memory unit.

7. The method of claim 6 , wherein determining the V T offset comprises determining the V T offset using a ratio of the error type differential and the V T offset error differential.

8. The method of claim 1 , wherein: the memory cells are multi-level memory cells, each multi-level memory cell having at least 2 n voltage levels, each voltage level corresponding to n≧2 data bits; and determining the V T offset comprises determining a V T offset for each of the 2 n voltage levels.

9. The method of claim 8 , wherein determining the V T offset for each of the 2 n voltagelevels comprises determining a V T offset for each voltage level independently of determining V T offsets for other voltage levels.

10. The method of claim 1 , further comprising: determining a number of program/erase cycles of the memory unit; and determining the V T offset using the V T offset error differential in response to the number of program/erase cycles being below a predetermined value.

11. The method of claim 1 , further comprising: determining a number of program/erase cycles of the memory unit; and determining the V T offset using a first process that includes using the V T offset error differential in response to the number of program/erase cycles being below a predetermined value; and determining the V T offset using a second process, different from the first process, in response to the number of program/erase cycles being above the predetermined value.

12. The method of claim 1 , further comprising reading a reference pattern stored in the memory unit, wherein determining the predominant error type comprises determining the predominant error type using the reference pattern.

13. A memory controller, comprising: a memory interface configured to receive data read from a memory unit of solid state memory cells; decoder circuitry configured to determine errors in the data; and a voltage threshold analyzer configured to: identify a predominant type of error of the memory unit of solid state memory cells by discriminating between at least errors caused by charge loss and errors caused by charge gain, the predominant type of error causing a V T shift of the memory unit; calculate a V T offset error differential, the V T offset error differential comprising a difference between a number of errors of the predominant type at a first V T offset and a number of errors of the predominant type at a second V T offset; and determine a V T offset using the V T offset error differential.

14. The memory controller of claim 13 , wherein the voltage threshold analyzer is configured to calculate an error type differential, the error type differential comprising a difference between a number of charge loss errors and a number of charge gain errors of the memory unit.

15. The memory controller of claim 13 , wherein the voltage threshold analyzer is configured to: count a number of charge loss errors in the data that are due to memory cell charge loss; count a number of charge gain errors in the data that are due to memory cell charge gain; and compare the number of charge loss errors to the number of charge gain errors.

16. The memory controller of claim 15 , wherein the charge gain errors and the charge loss errors are caused by voltage shifts between two adjacent voltage levels.

17. The memory controller of claim 13 , wherein: the memory cells are multi-level memory cells having at least 2 n voltage levels, each voltage level corresponding to n≧2 data bits; and the voltage threshold analyzer is configured to determine a V T offset for each of the plurality of voltage levels.

18. The memory controller of claim 13 , further comprising: a program/erase cycle counter configured to determine a number of program/erase cycles of the memory unit, wherein the voltage threshold analyzer is configured to determine the V T offset using the V T offset error differential in response to the number of program/erase cycles being below a predetermined value.

19. The memory controller of claim 13 , wherein: the decoder circuitry is configured to determine errors using a reference pattern read from the memory unit; and the voltage threshold analyzer is configured to determine the predominant error type using the reference pattern.

20. The memory controller of claim 13 , wherein the voltage threshold analyzer is configured to: determine whether a number of complex errors is greater than at least one of a number of charge loss errors and a number of charge gain errors, wherein the charge gain errors and the charge loss errors are caused by voltage shifts between two adjacent voltage levels of a memory cell and the complex errors are caused by voltage shifts between two non-adjacent voltage levels of a memory cell; and determine the V T offset using the V T offset error differential in response to the number charge gain errors and the number of charge loss errors being greater than the number of complex errors.