Legal claims defining the scope of protection, as filed with the USPTO.
1. A display, comprising: a display substrate; light-emitting diodes on the substrate; an array of pixel control circuits that control the light-emitting diodes, wherein each pixel control circuit includes a silicon integrated circuit and semiconducting oxide thin-film transistor circuitry, wherein the semiconducting oxide thin-film transistor circuitry is interposed between the silicon integrated circuit and the display substrate, wherein the silicon integrated circuit comprises transistors formed from silicon, and wherein each silicon integrated circuit overlaps at least one semiconducting oxide thin-film transistor in the semiconductor oxide thin-film transistor circuitry; and conductive material that connects contacts on the silicon integrated circuit to metal traces on the display substrate, wherein the metal traces comprises source-drain terminals in the semiconducting oxide thin-film transistor circuitry.
2. The display defined in claim 1 wherein each pixel control circuit is coupled to a plurality of light-emitting diodes by a respective set of output paths.
3. The display defined in claim 2 wherein each silicon integrated circuit has at least four outputs each of which is coupled to the anode of at least one of the light-emitting diodes.
4. The display defined in claim 1 wherein the light-emitting diodes include red light-emitting diodes, green light-emitting diodes, and blue light-emitting diodes.
5. The display defined in claim 1 wherein the light-emitting diodes comprise inorganic light-emitting diodes each formed from a respective crystalline semiconductor structure.
6. The display defined in claim 1 wherein each silicon integrated circuit is coupled to between 4 and 25 of the light-emitting diodes.
7. The display defined in claim 6 further comprising a plurality of data lines associated with respective columns of the silicon integrated circuits and a plurality of horizontal control lines associated with respective rows of the silicon integrated circuits.
8. The display defined in claim 1 wherein the pixel control circuits include switching transistors that are formed from semiconducting oxide transistors in the thin-film semiconducting oxide transistor circuitry.
9. The display defined in claim 8 wherein the pixel control circuits include drive transistors that drive current through the light-emitting diodes and wherein the drive transistors are formed in the silicon integrated circuits.
10. The display defined in claim 9 wherein the pixel control circuits include emission enable transistors that are formed in the silicon integrated circuits.
11. A display, comprising: a display substrate; light-emitting diodes on the substrate; an array of pixel control circuits that control the light-emitting diodes, wherein each pixel control circuit includes a silicon integrated circuit and semiconducting oxide thin-film transistor circuitry, wherein the semiconducting oxide thin-film transistor circuitry is interposed between the silicon integrated circuit and the display substrate, wherein the silicon integrated circuit comprises transistors formed from silicon, and wherein each silicon integrated circuit overlaps at least one semiconducting oxide thin-film transistor in the semiconductor oxide thin-film transistor circuitry; and conductive material that connects contacts on the silicon integrated circuit to metal traces on the display substrate, wherein the contacts on the silicon integrated circuit include first and second contacts and wherein the semiconducting oxide thin-film transistor has first and second terminals that are respectively connected to the first and second contacts.
12. A display, comprising: inorganic light-emitting diodes; and an array of pixel control circuits each of which supplies drive currents to an associated set of the inorganic light-emitting diodes, wherein each pixel control circuit includes a silicon integrated circuit that supplies the drive currents and includes thin-film semiconducting oxide transistors that supply signals to the silicon integrated circuit, wherein the silicon integrated circuit is positioned above the thin-film semiconducting oxide transistors such that the silicon integrated circuit overlaps the thin-film semiconducting oxide transistors, and wherein the silicon integrated circuit comprises contacts that are soldered to source-drain contacts of the thin-film semiconducting oxide transistors.
13. The display defined in claim 12 wherein the thin-film semiconducting oxide transistors comprise switching transistors that are controlled by scan line signals from scan lines and wherein the signals supplied to the silicon integrated circuit comprises data signals.
14. The display defined in claim 12 , wherein the display further comprises a substrate, wherein the inorganic light-emitting diodes are mounted on a surface of the substrate, wherein the silicon integrated circuit is mounted on the surface of the substrate, and wherein the thin-film semiconducting oxide transistors are formed on the surface of the substrate.
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March 21, 2017
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