Multi-Step Drive Signal for Pin Diode Based RF Amplitude Modulators

1. A method of driving one or more P-Intrinsic-N (PIN) diodes, the method comprising: receiving an input; generating a plurality of pulses based on the input, wherein: a first pulse of the plurality of pulses controls a rise time of an RF envelope generated by an RF interface, a second pulse of the plurality of pulses controls a fall time of the RF envelope generated by the RF interface, and a third pulse of the plurality of pulses controls a pulse width of the RF envelope; combining the plurality of pulses to generate a drive signal, wherein at least one of an amplitude or a pulse width of the third pulse is independently tunable; delivering the drive signal to the RF interface including the one or more PIN diodes; and generating the RF envelope by driving the one or more PIN diodes with the drive signal, wherein at least one of an amplitude or a pulse width of the first pulse is independently tunable from an amplitude or a pulse width of the second pulse.

2. The method of claim 1 , wherein the plurality of pulses further includes one or more high pulses to control an on isolation of the one or more PIN diodes, and wherein at least one of an amplitude or a pulse width of the one or more high pulses are independently tunable.

3. The method of claim 1 , wherein the plurality of pulses further includes one or more low pulses to control an off isolation of the one or more PIN diodes, and wherein at least one of an amplitude or a pulse width of the one or more low pulses are independently tunable.

4. The method of claim 1 , wherein generating the plurality of pulses comprises generating the plurality of pulses by a digital-to-analog converter.

5. The method of claim 1 , wherein the amplitude of the plurality of pulses is adjusted by one or more potentiometers, and wherein the pulse width of the plurality of pulses is adjusted by one or more operational amplifiers.

6. The method of claim 1 , wherein a frequency of the RF envelope is between 1030-1090 megahertz (MHz).

7. A radio frequency (RF) modulator device for driving one or more P-Intrinsic-N (PIN) diodes to generate an RF envelope, the RF modulator device comprising: first circuitry configured to receive an input and generate a plurality of pulses based on the input, wherein: a first pulse of the plurality of pulses controls a rise time of the RF envelope, a second pulse of the plurality of pulses controls a fall time of the RF envelope, wherein at least one of an amplitude or a pulse width of the first pulse is independently tunable from an amplitude or a pulse width of the second pulse, and a third pulse of the plurality of pulses controls a pulse width of the RF envelope generated by the one or more PIN diodes, wherein at least one of an amplitude or a pulse width of the third pulse is independently tunable; second circuitry configured to receive and combine the plurality of pulses to generate a drive signal; and third circuitry that includes the one or more PIN diodes, wherein the second circuitry delivers the drive signal to drive the one or more PIN diodes included in the third circuitry, and wherein the one or more PIN diodes generate the RF envelope.

8. The RF modulator device of claim 7 , wherein the plurality of pulses further includes one or more high pulses to control an on isolation of the one or more PIN diodes, and wherein at least one of an amplitude or a pulse width of the one or more high pulses are independently tunable.

9. The RF modulator device of claim 7 , wherein the plurality of pulses further includes one or more low pulses to control an off isolation of the one or more PIN diodes, and wherein at least one of an amplitude or a pulse width of the one or more low pulses are independently tunable.

10. The RF modulator device of claim 7 , wherein the first circuitry includes a digital-to-analog converter configured to generate the plurality of pulses from the input.

11. The RF modulator device of claim 7 , wherein the first circuitry includes one or more potentiometers.

12. The RF modulator device of claim 11 , wherein the one or more potentiometers adjusts the amplitude of the plurality of pulses.

13. The RF modulator device of claim 7 , wherein the first circuitry includes one or more operational amplifiers.

14. The RF modulator device of claim 13 , wherein the one or more operational amplifiers in combination with one or more discrete digital logic components adjusts the pulse width of the plurality of pulses.

15. The RF modulator device of claim 7 , wherein a pulse delay between the input of the first circuitry and generation of the RF envelope by the third circuitry is 150 nanoseconds (ns) or less.