To provide a novel semiconductor device including an oxide semiconductor film. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first gate electrode, a first insulating film over the first gate electrode, a first oxide semiconductor film over the first insulating film, a source electrode electrically connected to the first oxide semiconductor film, a drain electrode electrically connected to the first oxide semiconductor film, a second insulating film over the first oxide semiconductor film, a second oxide semiconductor film functioning as a second gate electrode, over the second insulating film, and a third insulating film over the second oxide semiconductor film. The second transistor includes a third oxide semiconductor film including a channel region, a source region, and a drain region over the second insulating film, a fourth insulating film over the channel region, a third gate electrode over the fourth insulating film, and the third insulating film over the source region and the drain region.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device comprising: a first transistor; and a second transistor, wherein the first transistor includes: a first gate electrode; a first insulating film over the first gate electrode; a first oxide semiconductor film over the first insulating film; a source electrode electrically connected to the first oxide semiconductor film; a drain electrode electrically connected to the first oxide semiconductor film; a second insulating film over the first oxide semiconductor film; a second oxide semiconductor film functioning as a second gate electrode, over the second insulating film; and a third insulating film over the second oxide semiconductor film, wherein the second transistor includes: a third oxide semiconductor film over the second insulating film, the third oxide semiconductor film including a channel region, a source region, and a drain region; a fourth insulating film over the channel region; a third gate electrode over the fourth insulating film; and the third insulating film over the source region and the drain region.
2. The semiconductor device according to claim 1 , wherein the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film each include In, M, and Zn, and wherein M is Al, Ga, Y, or Sn.
3. The semiconductor device according to claim 1 , wherein at least one of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film includes a multilayer structure.
4. The semiconductor device according to claim 1 , wherein at least one of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film includes a crystal part, and wherein the crystal part has c-axis alignment.
5. The semiconductor device according to claim 1 , wherein the first gate electrode and the second gate electrode are electrically connected to each other.
6. The semiconductor device according to claim 1 , wherein the second transistor further includes: a source electrode electrically connected to the source region; and a drain electrode electrically connected to the drain region.
7. The semiconductor device according to claim 1 , wherein the third insulating film includes one of or both hydrogen and nitrogen.
8. An electronic device comprising: the semiconductor device according to claim 1 ; and one of an operation key and a battery.
9. A display device comprising: a driver circuit portion; and a pixel portion, wherein the driver circuit portion includes a first transistor, the first transistor including: a first gate electrode; a first insulating film over the first gate electrode; a first oxide semiconductor film over the first insulating film; a source electrode electrically connected to the first oxide semiconductor film; a drain electrode electrically connected to the first oxide semiconductor film; a second insulating film over the first oxide semiconductor film; a second oxide semiconductor film functioning as a second gate electrode, over the second insulating film; and a third insulating film over the second oxide semiconductor film, and wherein the pixel portion includes a second transistor, the second transistor including: a third oxide semiconductor film over the second insulating film, the third oxide semiconductor film including a channel region, a source region, and a drain region; a fourth insulating film over the channel region; a third gate electrode over the fourth insulating film; and the third insulating film over the source region and the drain region.
10. The display device according to claim 9 , wherein the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film each include In, M, and Zn, and wherein M is Al, Ga, Y, or Sn.
11. The display device according to claim 9 , wherein at least one of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film includes a multilayer structure.
12. The display device according to claim 9 , wherein at least one of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film includes a crystal part, and wherein the crystal part has c-axis alignment.
13. The display device according to claim 9 , wherein the first gate electrode and the second gate electrode are electrically connected to each other.
14. The display device according to claim 9 , wherein the second transistor further includes: a source electrode electrically connected to the source region; and a drain electrode electrically connected to the drain region.
15. The display device according to claim 9 , wherein the third insulating film includes one of or both hydrogen and nitrogen.
16. A display module comprising: the display device according to claim 9 ; and a touch sensor.
17. An electronic device comprising: the display device according to claim 9 ; and one of an operation key and a battery.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
April 25, 2016
June 19, 2018
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