Under layer composition and methods of manufacturing semiconductor devices are disclosed. The method of manufacturing semiconductor device includes the following steps. A layer of an under layer composition is formed, wherein the under layer composition includes a polymeric material and a cross-linker, and the cross-linker includes at least one decomposable functional group. A curing process is performed on the layer of the under layer composition to form an under layer, wherein the cross-linker is crosslinked with the polymeric material to form a crosslinked polymeric material having the at least one decomposable functional group. A patterned photoresist layer is formed over the under layer. An etching process is performed to transfer a pattern of the patterned photoresist layer to the under layer. The under layer is removed by decomposing the decomposable functional group.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of manufacturing a semiconductor device, comprising: forming a layer of an under layer composition, wherein the under layer composition comprises a polymeric material and a cross-linker, and the cross-linker comprises at least one decomposable functional group; performing a curing process on the layer of the under layer composition to form an under layer, wherein the cross-linker is crosslinked with the polymeric material to form a crosslinked polymeric material having the at least one decomposable functional group; forming a patterned photoresist layer over the under layer; performing an etching process to transfer a pattern of the patterned photoresist layer to the under layer; and removing the under layer by decomposing the decomposable functional group.
2. The method according to claim 1 , wherein the polymeric material comprises at least one reaction group providing a crosslinking site, the at least one reaction group is selected from the group consisting of a hydroxyl group, an alkoxyl group having a carbon number less than 6, an amine group, a thiol group, a ester group, an alkene group, an alkyne group, an epoxy group, an aziridine group, an oxetane group, an aldehyde group, a ketone group, and a carboxylic acid group.
3. The method according to claim 1 , wherein the cross-linker comprises at least one crosslinkable functional group, and the at least one crosslinkable functional group is selected from the group consisting of a hydroxyl group, an alkoxyl group having a carbon number less than 6, an amine group, a thiol group, a ester group, an alkene group, an alkyne group, an epoxy group, an aziridine group, an oxetane group, an aldehyde group, a ketone group, and a carboxylic acid group.
4. The method according to claim 1 , wherein the at least one decomposable functional group of the cross-linker is selected from the group consisting of an ester group, an ether group, a silyl ether group, an acetal group, a ketal group, an amide group, an imine group, an imide group, and a carbamate group.
5. The method according to claim 1 , wherein the curing process is performed at a temperature ranging between about 100° C. and 400° C.
6. The method according to claim 1 , further comprising forming a middle layer between the under layer and the patterned photoresist layer.
7. The method according to claim 1 , wherein in the step of decomposing the decomposable functional group, a bond in the at least one decomposable functional group is broken.
8. The method according to claim 1 , wherein removing the under layer is performed under a condition of pH 4˜10.
9. The method according to claim 1 , wherein removing the under layer is performed under a condition of pH 6˜8.
10. A method of manufacturing a semiconductor device, comprising: forming an under layer over a dielectric layer, wherein the under layer comprises a crosslinked polymeric material comprising at least one decomposable functional group; forming a patterned photoresist layer over the under layer; performing a first etching process to transfer a pattern of the patterned photoresist layer to the under layer; by using the under layer as a mask, performing a second etching process to transfer the pattern to the dielectric layer; and removing the under layer by decrosslinking the crosslinked polymeric material through the at least one decomposable functional group.
11. The method according to claim 10 , wherein the at least one decomposable functional group is selected from the group consisting of an ester group, an ether group, a silyl ether group, an acetal group, a ketal group, an amide group, an imine group, an imide group, and a carbamate group.
12. The method according to claim 10 , wherein the under layer is formed directly on the dielectric layer.
13. The method according to claim 10 , wherein the dielectric layer is a low-k dielectric layer.
14. The method according to claim 10 , wherein removing the under layer is performed under a condition of pH 4˜10.
15. The method according to claim 10 , wherein removing the under layer is performed under a condition of pH 6˜8.
16. A method of manufacturing a semiconductor device, comprising: forming a layer of an under layer composition, wherein the under layer composition comprises a polymeric material and a cross-linker, the polymeric material comprises at least one reaction group, the cross-linker comprises at least one crosslinkable functional group and at least one decomposable functional group, the at least one crosslinkable functional group is capable of crosslinking with the at least one reaction group of the polymeric material, and the decomposable functional group is capable of being decomposed under a condition of pH 4˜10; performing a curing process on the layer of the under layer composition to form an under layer, wherein the cross-linker is crosslinked with the polymeric material to form a crosslinked polymeric material having the at least one decomposable functional group; forming a patterned photoresist layer over the under layer; performing an etching process to transfer a pattern of the patterned photoresist layer to the under layer; and removing the under layer by decomposing the decomposable functional group.
17. The method according to claim 16 , wherein the at least one reaction group of the polymeric material is selected from the group consisting of a hydroxyl group, an alkoxyl group having a carbon number less than 6, an amine group, a thiol group, a ester group, an alkene group, an alkyne group, an epoxy group, an aziridine group, an oxetane group, an aldehyde group, a ketone group, and a carboxylic acid group.
18. The method according to claim 16 , wherein the at least one crosslinkable functional group of the cross-linker is selected from the group consisting of a hydroxyl group, an alkoxyl group having a carbon number less than 6, an amine group, a thiol group, a ester group, an alkene group, an alkyne group, an epoxy group, an aziridine group, an oxetane group, an aldehyde group, a ketone group, and a carboxylic acid group.
19. The method according to claim 16 , wherein the at least one decomposable functional group of the cross-linker is selected from the group consisting of an ester group, an ether group, a silyl ether group, an acetal group, a ketal group, an amide group, an imine group, an imide group, and a carbamate group.
20. The method according to claim 16 , wherein the decomposable functional group is capable of being decomposed under a condition of pH 6˜8.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
March 24, 2017
September 25, 2018
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