A wafer processing laminate including support, temporary adhesive material layer laminated on the support, and wafer stacked on temporary adhesive material layer, wafer having front surface on which circuit is formed and back surface to be processed, temporary adhesive material layer including first temporary adhesive layer composed of thermoplastic resin layer (A) laminated on front surface of wafer and second temporary adhesive layer composed of thermosetting resin layer (B) laminated on first temporary adhesive layer, thermoplastic resin layer (A) being soluble in cleaning liquid (D) after processing wafer, thermosetting resin layer (B) being insoluble in cleaning liquid (D) after heat curing and capable of absorbing cleaning liquid (D) such that cleaning liquid (D) permeates into layer (B). This wafer processing laminate allows a wide selection of materials, facilitates separation and collection of processed wafer, meets requirements on various processes, and can increase productivity of thin wafers.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A wafer processing laminate comprising a support, a temporary adhesive material layer laminated on the support, and a wafer stacked on the temporary adhesive material layer, the wafer having a front surface on which a circuit is formed and a back surface to be processed, the temporary adhesive material layer comprising a first temporary adhesive layer composed of a thermoplastic resin layer (A) laminated on the front surface of the wafer, a second temporary adhesive layer composed of a thermosetting resin layer (B) laminated on the first temporary adhesive layer, and a third temporary adhesive layer composed of a separation layer (C) laminated between the support and the thermosetting resin layer (B), the thermoplastic resin layer (A) being soluble in a cleaning liquid (D) after processing the wafer, the thermosetting resin layer (B) being insoluble in the cleaning liquid (D) after heat curing and capable of absorbing the cleaning liquid (D) such that the cleaning liquid (D) permeates into the layer (B), the layer (C) having a peeling force of 0.5 gf or more and 50 gf or less which is required for peeling the thermosetting resin layer (B) along an interface between the thermosetting polymer layer (B) and the separation layer (C), or which is required for peeling the thermosetting polymer layer (B) with cohesion failure of the separation layer (C), when the polymer layer (B) laminated on the separation layer (C) on the support is thermally cured, as measured by 180° peeling using a test piece having a width of 25 mm.
2. The wafer processing laminate according to claim 1 , wherein the separation layer (C) does not remain on the thermosetting resin layer (B) when the support is separated from the wafer processing laminate along the separation layer (C).
3. The wafer processing laminate according to claim 1 , wherein when the support is separated from the wafer processing laminate along the separation layer (C), the separation layer (C) can partially or completely remain on the thermosetting resin layer (B), and the separation layer (C) is soluble in the cleaning liquid (D), or insoluble in the cleaning liquid (D) and capable of absorbing the cleaning liquid (D) such that the cleaning liquid (D) permeates into the layer (C).
4. The wafer processing laminate according to claim 1 , wherein the thermoplastic resin layer (A) contains one or more of an aliphatic hydrocarbon resin and an aromatic hydrocarbon resin.
5. The wafer processing laminate according to claim 1 , wherein the thermosetting resin layer (B) contains one or more of a silicone resin, an epoxy resin, a polyimide resin, an acrylic resin, and a phenol resin.
6. The wafer processing laminate according to claim 1 , wherein the cleaning liquid (D) is one or more organic solvents selected from an aliphatic hydrocarbon solvent, an aromatic hydrocarbon solvent, a ketone solvent, an alcohol solvent, an ether solvent, an ester solvent, an amine solvent, an ammonium solvent, and an organic acid solvent, or a mixed solution containing the organic solvent and one or more liquids selected from a basic aqueous solution, an acidic aqueous solution, and water.
7. The wafer processing laminate according to claim 2 , wherein the separation layer (C) contains one or more of a thermoplastic silicone material, a thermosetting silicone material, a fluorine material, an aliphatic hydrocarbon material, and an aromatic hydrocarbon material.
8. The wafer processing laminate according to claim 3 , wherein the separation layer (C) contains one or more of a thermoplastic silicone material, a thermosetting silicone material, a fluorine material, an aliphatic hydrocarbon material, and an aromatic hydrocarbon material.
9. The wafer processing laminate according to claim 2 , wherein one or more of adhesive strength between the support and the separation layer (C), adhesive strength between the thermosetting resin layer (B) and the separation layer (C), and cohesive failure strength of the separation layer (C) are lower than adhesive strength between the thermoplastic resin layer (A) and the thermosetting resin layer (B).
10. The wafer processing laminate according to claim 3 , wherein one or more of adhesive strength between the support and the separation layer (C), adhesive strength between the thermosetting resin layer (B) and the separation layer (C), and cohesive failure strength of the separation layer (C) are lower than adhesive strength between the thermoplastic resin layer (A) and the thermosetting resin layer (B).
11. The wafer processing laminate according to claim 2 , wherein one or more of adhesive strength between the support and the separation layer (C), adhesive strength between the thermosetting resin layer (B) and the separation layer (C), and cohesive failure strength of the separation layer (C) are decreased when the wafer processing laminate is plane-irradiated or laser-irradiated with X-rays, ultraviolet rays, visible rays, infrared rays, or light having wavelengths within a specific range.
12. The wafer processing laminate according to claim 3 , wherein one or more of adhesive strength between the support and the separation layer (C), adhesive strength between the thermosetting resin layer (B) and the separation layer (C), and cohesive failure strength of the separation layer (C) are decreased when the wafer processing laminate is plane-irradiated or laser-irradiated with Xrays, ultraviolet rays, visible rays, infrared rays, or light having wavelengths within a specific range.
13. The wafer processing laminate according to claim 1 , wherein the separation layer (C) contains one or more of a thermoplastic silicone material, a fluorine material, an aliphatic hydrocarbon material, and an aromatic hydrocarbon material.
14. The wafer processing laminate according to claim 1 , wherein the separation layer (C) contains a thermosetting silicone material, and the thermosetting silicone material contains components (C1) to (C3) shown below: (C1) an organopolysiloxane having two or more alkenyl groups per molecule; (C2) an organohydrogenpolysiloxane having two or more silicon-bonded hydrogen atoms (Si—H groups) per molecule, in such an amount that a mole ratio of the Si—H group in the component (C2) to the alkenyl group in the component (C1) ranges from 0.3 to 10; and (C3) a platinum-based catalyst.
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November 15, 2016
October 30, 2018
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