A die stack comprises a first integrated circuit (IC) die having at least a first device comprising a first source, a first drain and a first gate electrode above a first channel region between the first source and the first drain. A second IC die has at least a second device comprising a second source, a second drain and a second gate electrode above a second channel region between the second source and the second drain. The second gate electrode is connected to the first gate electrode by a path including a first through substrate via (TSV), the second drain connected to the first source by a path including a second TSV.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method comprising joining a first integrated circuit (IC) die having at least a first transistor comprising a first gate electrode to a second IC die having at least a second transistor comprising a second gate electrode, the joining including: electrically connecting the second gate electrode to the first gate electrode by a path including a first through substrate via (TSV), and electrically connecting the second transistor in series with the first transistor by a drain-to-source path including a second TSV, where the second TSV is offset outside an active region containing a drain, a channel and a source of the first transistor.
2. The method of claim 1 , further comprising forming a conductive fine above a source of the first transistor, the conductive line connecting the source of the first transistor to the second TSV.
3. The method of claim 1 , further comprising forming a conductive line above a drain of the second transistor, the conductive line connecting the drain of the second transistor to the second TSV.
4. The method of claim 1 , wherein the first IC die further comprises an additional transistor having an additional gate electrode and an additional drain, further comprising: coupling the first gate electrode and the additional gate electrode by one or more of a contact, a via or a conductive line in an interconnect structure of the first IC die; and coupling the drain and the additional drain by one or more of a contact, a via or a conductive line in the interconnect structure of the first IC die.
5. The method of claim 1 , wherein the first die is above the second die, the second die is above a third die, and the method further comprises forming a third TSV coupling a drain of the first transistor with a node in the third IC die.
6. The method of claim 1 , wherein the first die is above the second die, the second die is above a third die, and the method further comprises forming a third TSV coupling a source of a third transistor with a node in the first IC die.
7. The method of claim 1 , wherein a first direction is defined from a drain of the first IC die to a source of the first IC die, and the second TSV is offset from the source of the first IC die in a direction normal to the first direction.
8. A semiconductor structure comprising a first integrated circuit (IC) die having at least a first transistor comprising a first gate electrode a second IC die having at least a second transistor comprising a second gate electrode a first conductive through substrate via (TSV) electrically connecting the second gate electrode to the first gate electrode; and a second conductive TSV electrically connecting the second transistor in series with the first transistor by a drain-to-source path, where the second TSV is offset outside an active region containing a drain, a channel and a source of the first transistor.
9. The semiconductor structure of claim 8 , wherein a drain of the second transistor is aligned with and beneath the source of the first transistor, and a source of the second transistor is aligned with and beneath the drain of the first transistor.
10. The semiconductor structure of claim 9 , further comprising a third IC die below the second IC die, the third IC die having a third transistor, wherein a drain of the third transistor is aligned with and beneath the source of the second transistor.
11. The semiconductor structure of claim 10 , further comprising a third conductive TSV coupling the source of the second transistor to the drain of the third transistor, wherein the second TSV and a third TSV are on opposite sides of a channel region of the second transistor.
12. The semiconductor structure of claim 8 , wherein the first and second IC dies are included in a stack having N dies, where N is an integer greater than two, each successive pair of dies within the N dies being electrically coupled to each other by a respective source-to-drain conductive TSV, and each successive pair of source-to-drain TSVs, and each successive pair of source-to-drain TSVs are located on opposite sides of a channel region of the second transistor.
13. The semiconductor structure of claim 8 , wherein the second TSV is connected to respective first and second conductive lines above each of the first and second transistors, each of the first and second conductive lines extending from the second TSV to respective first and second contacts or vias in the active region.
14. The semiconductor structure of claim 8 , wherein the first TSV is offset outside a channel region of the first transistor.
15. A semiconductor structure comprising a first integrated circuit (IC) die having at least a first transistor comprising a first gate electrode, a source and a drain, with a first direction defined from the drain to the source; a second IC die having at least a second transistor comprising a second gate electrode a first conductive through substrate via (TSV) electrically connecting the second gate electrode to the first gate electrode; and a second conductive TSV electrically connecting the second transistor in series with the first transistor by a drain-to-source path, where the second TSV is offset from the source in a direction normal to the first direction.
16. The semiconductor structure of claim 15 , further comprising a third transistor in the first die, and a fourth transistor in the second die, wherein the first transistor and the third transistor share a diffusion region with each other and the second transistor and the fourth transistor share a diffusion region with each other.
17. The semiconductor structure of claim 16 , further comprising the third transistor in the first die, wherein the drain of the first transistor is conductively coupled to the drain of the third transistor.
18. The semiconductor structure of claim 16 , wherein the first TSV is offset outside a channel region of the first transistor.
19. The semiconductor structure of claim 15 , wherein the source of the first transistor has a first contact connected to a first conductive line, the drain of the second transistor has a second contact connected to a second conductive line, and the second TSV is coupled between the first conductive line and the second conductive line.
20. The semiconductor structure of claim 15 , wherein a drain of the second transistor is aligned with and beneath the source of the first transistor, and a source of the second transistor is aligned with and beneath the drain of the first transistor.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
February 14, 2017
November 6, 2018
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