The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method comprising: doping a source side and a drain side of a device with VO 2 ; and forming a source region and a drain region on the VO 2 doped source side and drain side, respectively, wherein the doped VO 2 region on the source side and the drain side is doped with a transition metal.
2. The method of claim 1 , further comprising epitaxially growing material for a source region and a drain region of the device.
3. The method of claim 1 , wherein the doping is a same type doping on the source side and the drain side.
4. The method of claim 1 , wherein the source region and the drain region comprise epitaxially grown heterojunctions with III-V materials.
5. A method comprising: doping a source side and a drain side of a device with VO 2 ; and forming a source region and a drain region on the VO 2 doped source side and drain side, respectively, wherein the source region and the drain region comprise epitaxially grown SiGe.
6. The method of claim 5 , wherein the doping is a same type doping on the source side and the drain side.
7. The method of claim 5 , wherein the doped VO 2 region on the source side and the drain side includes trivalent cations.
8. The method of claim 7 , wherein the trivalent cations comprise at least one of Cr 3+ and Al 3+ .
9. The method of claim 5 , wherein the source region and drain region comprises epitaxially grown Si/SiGe.
10. A method comprising: doping a source side and a drain side of a device with VO 2 ; and forming a source region and a drain region on the VO 2 doped source side and drain side, respectively, wherein the source region and the drain region comprise epitaxially grown heterojunctions with III-V materials.
11. The method of claim 10 , wherein the doping is a same type doping on the source side and the drain side.
12. The method of claim 10 , wherein the doped VO 2 region on the source side and the drain side includes trivalent cations.
13. The method of claim 12 , wherein the trivalent cations comprise at least one of Cr 3+ and Al 3+ .
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
October 25, 2017
December 25, 2018
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