Light engine array

1. A light engine array having at least an anode and a cathode comprising: a first type semiconductor layer; an active layer; and a second type semiconductor layer; a cathode electrode has a conductive metal layer in electrical contact with a first portion of the first type semiconductor layer, and the second type semiconductor layer to form a short circuit structure in a common cathode region; and an anode electrode has a conductive metal layer and coupled to a second portion of the first type semiconductor layer; wherein, the anode electrode is electrically isolated with the active layer and the second type semiconductor layer in a sub-pixel region; a surface of the cathode electrode and a surface of the anode electrode have substantially a same level in the sub-pixel region and the common cathode region.

2. The light engine array according to claim 1 , further comprising: a dam array coupled to the second type semiconductor layer in a street region to provide a uniform current spreading.

3. The light engine array according to claim 1 , further comprising: a distributed Bragg reflector (DBR) formed on the bottom of the first type semiconductor layer to narrow an emitting light spectrum width to increase gamut of a display.

4. The light engine array according to claim 1 , further comprising: a reflection layer; wherein, a light output power of each light engine is controlled by modifying the reflectivity of the reflection layer.

5. The light engine array according to claim 1 , further comprising: a reflection layer; wherein, a light output power of each light engine is controlled by a size of the reflection layer area.

6. The light engine array according to claim 1 , further comprising: a dielectric layer formed on top of the second type semiconductor layer to control a light output divergence angle.

7. The light engine array according to claim 1 , further comprising: a lens coupled to one or more than one light engine to project a display image.

8. The light engine array according to claim 1 , further comprising: two separate display images set in front of eyes and provide a synchronous image signal to perform a three-dimensional image.

9. The light engine array according to claim 1 , wherein, in the common cathode region, the metal conductive layer is in direct electrical contact with a portion of the active layer.

10. The light engine array according to claim 1 , wherein, multiple types of semiconductor layers and the active layer are epitaxial layers; wherein, density of particles and pits size are controlled by controlling an epitaxial growth time and temperature to increase a production yield.

11. The light engine array according to claim 1 further comprising: a polymer, coupled to edges of light engines to form a black matrix array; wherein, the black matrix array is purposed to absorb the light escaping form the edges of each light engine and minimize a crosstalk effect of light.

12. A light engine array having at least an anode and a cathode comprising: a first type semiconductor layer; an active layer; and a second type semiconductor layer; a cathode electrode has a conductive metal layer in electrical contact with a first portion of the first type semiconductor layer, and the second type semiconductor layer to form a short circuit structure in a common cathode region; and an anode electrode has a conductive metal layer and coupled to a second portion of the first type semiconductor layer; wherein, the anode electrode is electrically isolated with the active layer and the second type semiconductor layer in a sub-pixel region; the cathode electrode and the anode electrode are on a backplane having circuitry; wherein, the cathode electrode coupled to the conductive metal layer in the common cathode region and the anode electrode coupled to the conductive metal layer in the sub-pixel region; and a light intensity of each light engine is controlled by a driving current.

13. The light engine array according to claim 12 , wherein, the material of the backplane could be selected from at least one of glass, silicon, sapphire, polyimide, plastic, or semiconductor materials.

14. The light engine array according to claim 12 , wherein, the backplane circuitry comprising data-lines and scan-lines to control images; wherein, the data-lines and scan-lines are fabricated by utilizing at least one of MOSFET, CMOS, TFT, LTPS, and IGZO technologies.

15. A light engine array having at least an anode and a cathode comprising: a first type semiconductor layer; an active layer; and a second type semiconductor layer; a cathode electrode has a conductive metal layer in electrical contact with a first portion of the first type semiconductor layer, and the second type semiconductor layer to form a short circuit structure in a common cathode region; and an anode electrode has a conductive metal layer and coupled to a second portion of the first type semiconductor layer; wherein, the anode electrode is electrically isolated with the active layer and the second type semiconductor layer in a sub-pixel region; a first LED unit has the anode electrode and the cathode electrode; a second LED unit has the anode electrode and the cathode electrode; wherein, the first LED unit and the second LED unit utilize the same electrodes of a backplane, the first LED unit and the second LED unit are selectable to be permanently electrically inactive by laser cutting one or more electrode line connected to the backplane.

16. The light engine array according to claim 1 , wherein, a light intensity of each light engine is controlled by a driving current.

17. The light engine array according to claim 1 , wherein, each adjacent light engine of a common cathode connected in a same row.

18. A light engine array having at least an anode and a cathode comprising: a first type semiconductor layer; an active layer; and a second type semiconductor layer; a cathode electrode has a conductive metal layer in electrical contact with a first portion of the first type semiconductor layer, and the second type semiconductor layer to form a short circuit structure in a common cathode region; and an anode electrode has a conductive metal layer and coupled to a second portion of the first type semiconductor layer; wherein, the anode electrode is electrically isolated with the active layer and the second type semiconductor layer in a sub-pixel region; multiple dams located on a street region and in contact with light engines to form a dam array and provide an enhancement frame structure.

19. The light engine array according to claim 18 , wherein, multiple types of semiconductor layers and the active layer are epitaxial layers; wherein, density of particles and pits size are controlled by controlling an epitaxial growth time and temperature to increase a production yield.

20. The light engine array according to claim 18 further comprising: a polymer, coupled to edges of light engines to form a black matrix array; wherein, the black matrix array is purposed to absorb the light escaping form the edges of each light engine and minimize a crosstalk effect of light.