Patentable/Patents/US-10224108
US-10224108

Non-volatile memory

PublishedMarch 5, 2019
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

A non-volatile memory includes a first memory cell. The first memory cell includes five transistors and a first capacitor. The first transistor includes a first gate, a first terminal and a second terminal. The second transistor includes a second gate, a third terminal and a fourth terminal. The third transistor includes a third gate, a fifth terminal and a sixth terminal. The fourth transistor includes a fourth gate, a seventh terminal and an eighth terminal. The fifth transistor includes a fifth gate, a ninth terminal and a tenth terminal. The first capacitor is connected between the third gate and a control line. The third gate is a floating gate. The second terminal is connected with the third terminal. The fourth terminal is connected with the fifth terminal. The sixth terminal is connected with the seventh terminal. The eighth terminal is connected with the ninth terminal.

Patent Claims

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Patent Metadata

Filing Date

January 3, 2018

Publication Date

March 5, 2019

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